1. Field of the Invention
The present invention relates to lead frames and packages for use in semiconductor devices. In particular, the present invention relates to lead frames partially embedded in mold resins in packages such as packages for microphones, sensors, SAW devices, quartz oscillators, and solid image pickup devices.
The present application claims priority on Japanese Patent Application No. 2008-90474, the content of which is incorporated herein by reference.
2. Description of the Related Art
Conventionally, semiconductor devices serving as silicon microphones and pressure sensors have been exemplarily designed such that microphone packages are held inside of hollow packages of a pre-mold type in which lead frames are molded with resins in advance.
Various semiconductor devices using pre-mold type packages have been developed and disclosed in various documents such as Patent Documents 1 and 2.
Patent Document 1 teaches a semiconductor device in which a semiconductor chip is mounted on a stage located approximately at the center of a lead frame; a mold resin is integrally formed to cover the backside and the surrounding area of the stage; interconnection leads are extended externally from the stage so that the intermediate portions thereof are exposed on the upper surface of a peripheral wall of the mold resin extended out of the stage. A cup-shaped metal cover is put on the mold resin such that the peripheral end thereof joins the peripheral wall of the mold resin, thus forming a space surrounding the semiconductor chip. The metal cover is electrically connected to the exposed portions of the interconnection leads.
The distal ends of the interconnection leads and the distal ends of the leads which are disposed externally from the stage are exposed on the backside of the mold resin. They are connected to the circuitry of an external substrate (or an external circuit board) for mounting the semiconductor device thereon.
Patent Document 2 teaches a semiconductor device in which a semiconductor chip (e.g. a microphone chip) is mounted on the circuitry surface of a “flat” external substrate, which is then covered with and fixed to a metal case (or a metal cover).
The semiconductor device of Patent Document 1 is designed such that the exposed portions of the interconnection leads are connected to the stage of the lead frame and the metal cover so that the semiconductor chip is surrounded by metal, thus improving shield property. This semiconductor device can be manufactured with low cost because of a simple structure in which the lead frame is simply molded and unified with the resin. However, the manufacturing method needs a complex bending process in which the interconnection leads are vertically extended so that the intermediate portions thereof are exposed on the upper surface of the peripheral wall of the mold resin, then, the distal ends thereof are folded back and directed downwardly so that they are exposed on the backside of the mold resin.
In the semiconductor device of Patent Document 2 having the “flat” package, it is likely that a bonding agent used for fixing the semiconductor chip via die bonding may overflow so as to reach and cover the internal ends of leads. In order to prevent such a drawback in which the bonding agent overflows so as to reach the internal ends of leads, it is necessary to secure an adequate distance between the chip mounting area and the internal ends of leads, thus preventing the bonding agent from unexpectedly overflowing towards the internal ends of leads. This makes it difficult to reduce the overall size of the semiconductor device of Patent Document 2.
It is an object of the present invention to provide a lead frame and a package each having a simple structure for reducing the overall size of a semiconductor device.
In the present invention, a lead frame, which is embedded in a box-shaped mold resin including a bottom portion, a peripheral wall disposed on the periphery of the base portion, and an extension portion extended from the periphery of the base portion outside of the peripheral wall, is constituted of a stage which is embedded in the base portion of the mold resin so that an extension portion thereof is extended in the extension portion of the mold resin, and a plurality of terminals which are formed in proximity to the stage and are distanced from each other in conjunction with the peripheral wall and the extension portion of the mold resin. A prescribed part of the surface of the stage serves as an internal connection surface in conjunction with the peripheral wall, while prescribed parts of the surfaces of the terminals serve as internal connection surfaces in conjunction with the peripheral wall. The other parts of the surfaces of the terminals serve as lower surfaces, which are lower than the surface of the stage in the thickness direction, in conjunction with the extension portion of the mold resin.
A package base is formed by sealing the lead frame with the mold resin in such a way that a plurality of holes is formed in the peripheral wall so as to partially expose the internal connection surface of the stage and the internal connection surfaces of the terminals, wherein the extension portion of the stage is exposed on the extension portion of the mold resin for embedding the surfaces of the terminals.
When a cover composed of a conductive material is attached to the extension portion of the mold resin for exposing the extension portion of the stage, it is possible to shield a semiconductor chip which is mounted on the stage and surrounded by the peripheral wall. In addition, holes are formed in the peripheral wall, which is disposed inwardly of the extension portion of the mold resin, so as to expose the internal connection surface of the stage and the internal connection surfaces of the terminals. In other words, the holes are encompassed within the peripheral wall while the extension portion of the mold resin is disposed outside of the peripheral wall. That is, when the semiconductor chip is fixed to the base portion of the package base via die bonding, it is possible to reliably prevent a bonding agent from overflowing towards the internal connection surfaces of the lead frame and the extension portion of the mold resin. This makes it possible to position the internal connection surfaces in proximity to the chip mounting area.
In addition, the cover is attached to the extension portion of the mold resin outside of the peripheral wall while the internal connection surfaces are exposed via the holes of the peripheral wall. This enables the lead frame to be entirely formed in a flat plate-shape.
It is possible to form an external connection surface projecting from the backside of the stage at a position vertically opposite to the internal connection surface of the stage, and a plurality of external connection surfaces projecting from the backsides of the terminals at positions vertically opposite to the internal connection surfaces of the terminals. In addition, it is possible to form a plurality of supports projecting from the backside of the stage with the same height as the external connection surfaces. The external connection surfaces and the supports are exposed on the backside of the mold resin. This makes it possible to stably hold the lead frame by an injection metal mold used for the formation of the mold resin such that the external connection surfaces and supports are brought into contact with the interior surface of the injection metal mold.
A package is constituted by the package base and the cover for covering the internal space surrounded by the peripheral wall, wherein the extension portion (e.g. brim) of the cover composed of a conductive material is electrically connected to the extension portion of the mold resin. Since the internal connection surfaces are exposed in only the holes of the peripheral wall which is disposed inwardly of the extension portion of the mold resin, it is possible to reliably prevent a bonding agent from overflowing toward the internal connection surfaces.
A semiconductor device is produced using the package in such a way that a semiconductor chip is mounted on the base portion of the mold resin of the package base just above the stage of the lead frame and is electrically connected to the internal connection surfaces of the stage and terminals via the holes of the peripheral wall.
A microphone package is produced using the package in such a way that a microphone chip is mounted on the package base just above the stage of the lead frame, wherein a sound hole communicating with the internal space is formed in either the cover or the package base. Since the internal space surrounded by the peripheral wall is reduced by disposing the peripheral wall close to the microphone chip, it is possible to increase the resonance frequency of the microphone package.
Furthermore, a plurality of small holes collectively serving as the sound hole can be formed in the exposed area of the stage which is exposed via a window hole formed in the mold resin.
As described above, it is possible to demonstrate the following effects.
These and other objects, aspects, and embodiments of the present invention will be described in more detail with reference to the following drawings.
The present invention will be described in further detail by way of examples with reference to the accompanying drawings.
A semiconductor device 1 according to a first embodiment of the present invention will be described with reference to
A plurality of lead frames, each corresponding to the lead frame 5, is consecutively formed and linearly aligned in a band-shaped sheet of a metal plate subjected to press working. In this specification, an upper/lower direction is referred to as a vertical direction, and a left/right direction is referred to as a horizontal direction (or a lateral direction) with respect to the lead frame 5 shown in
The lead frame 5 includes a stage 11 in proximity to a power-supply terminal 12, an output terminal 13, and a gain terminal 14 which are disposed with prescribed distances therebetween and which are respectively connected to the external frame 10 via the connections 9.
The lead frame 5 is entirely formed in a rectangular shape, wherein the stage 11 is disposed around one corner defined by adjacent two sides which in turn circumscribe a main portion 15 thereof, and wherein two extension portions 16 and 17 are extended from and unified with the main portion 15. The distal ends of the extension portions 16 and 17 are disposed at approximately the center positions on the other adjacent two sides of the rectangular shape.
In addition, the three terminals 12 to 14 are respectively disposed at the other three corners of the rectangular shape surrounded by the external frame 10. Internal connection surfaces 21, 22, and 23 occupy the prescribed areas of the terminals 12, 13, and 14 in connection with the semiconductor chips 2 and 3, the details of which will be described later. Other areas of the terminals 12 to 14 (except for the internal connection surfaces 21 to 23) are reduced in thickness by way of half etching, thus forming lower surfaces 24 which are lower than the internal connection surfaces 21 to 23 in the thickness direction of the lead frame 5.
As shown in
As shown in
In the backside of the stage 11 shown in
All the eight connections 9, which are disposed at four centers of four sides and in proximity to four corners, are formed at the same height as the external connection surface 29, thus forming supports 32 and 33 (which are brought into contact with a metal mold for use in the formation of the mold resin 6). Similar to the supports 32 and 33, a support 34 is formed at the same height as the external connection surface and is disposed at a prescribed position on the backside of the extension portion 31 of the terminal 14, i.e. at an approximately center position in the horizontal direction (or width direction) of the lead frame 5 in its lower section within the extension portion 31. All the connections 9 are not subjected to half etching so as to maintain the original thickness as the original metal plate.
The mold resin 6 is formed integrally with the lead frame 5 having the above structure, thus forming the package base 7 shown in
Substantially the center portion of the lead frame 5, i.e. the surface and backside of the stage 11 occupying the inside of the area A shown in
The extension portion 43 which is extended externally from the peripheral wall 42 is formed in the same plane with the base portion 41 so as to arrange the external portion of the lead frame 5 externally of the area A shown in
As shown in
As shown in
A cover 8 mounted on the package base 7 is composed of a conductive metal material such as copper and is subjected to drawing by the height of the peripheral wall 42 of the package base 7. A side wall 52 is formed in the periphery of a top portion 51 of the cover 8, wherein a brim 53 is formed at the lower end of the side wall 52 and is horizontally elongated in parallel with the top portion 51. A sound hole 54 is formed to run through a prescribed position of the top portion 51 of the cover 8. As shown in
Next, a manufacturing method of the semiconductor device 1 will be described with reference to
First, a metal plate is subjected to half etching while masking prescribed parts thereof so as to reduce the thickness of the hatching areas of the lead frame 5 shown in
Next, the lead frame 5 is placed in an injection metal mold, into which a melted resin is injected to produce the mold resin 6 embracing the lead frame 5 therein.
After the mold resin 6 is integrally formed with the lead frame 5, the semiconductor chips 2 and 3 are fixed onto the base portion 41 of the package base 7 via the die bonds 46, and they are electrically connected to the internal connection surfaces 21 to 23 of the terminals 12 to 14 and the internal connection surface 25 of the stage 11, which are exposed in the holes 45 formed in the wide portion 44 of the peripheral wall 42, via wire bonding. Then, the cover 8, which is produced independently of the package base 7, is fixedly mounted on the package base 7 via the conductive adhesive 56 applied to the extension portion 43. In this state, a plurality of lead frames (each corresponding to the lead frame 5) is horizontally interconnected to adjoin together via the connections 9, while a plurality of covers (each corresponding to the cover 8) is correspondingly interconnected to adjoin together via connections (not shown), so that a plurality of package bases (each corresponding to the package base 7) is horizontally interconnected to adjoin together with prescribed pitches therebetween. Therefore, the covers are simultaneously bonded to the package bases having the lead frames.
After completion of the bonding process, the connections of the lead frames projecting from the mold resins and the connections of the covers are collectively subjected to cutting, thus producing individual pieces of products (each corresponding to the package 4 constituted of the lead frame 5, the package base 7, and the cover 8).
The semiconductor device 1 is mounted on an external substrate (or an external circuit board) in such a way that the terminals 12 to 14 and the external connection surfaces 26 to 29 of the stage 11 are soldered to the external substrate. In the semiconductor device shown in
In the package base 7, the peripheral wall 42 is vertically disposed between the base portion 41 for fixedly mounting the semiconductor chips 2 and 3 and the extension portion 43 which is fixed with the brim 53 of the cover 8, and the internal connection surfaces 21 to 23 of the terminals 12 to 14 and the internal connection surface 25 of the stage 11 are exposed in the holes 45 formed in the wide portion 44 of the peripheral wall 42; hence, the peripheral wall 42 dams up the die bond 46 and the conductive adhesive 56, which are thus prevented from overflowing towards the holes 45 via the peripheral wall 42. This allows the chip mounting area of the base portion 41 to be positioned close to the internal connection surfaces 21 to 23 and 25; thus, it is possible to reduce the overall area of the semiconductor device 1.
In addition, the internal connection surfaces 21 to 23 of the terminals 12 to 14 and the internal connection surface 25 of the stage 11 are exposed inside the holes 45 formed in the wide portion 44 of the peripheral wall 42; the cover is fixed to the package base 7 in such a way that the brim 53 is fixed to the extension portion 43 which lies in the same plane as the base portion 41 outside of the peripheral wall 42; and the lead frame 5 is entirely formed in a flat plate-shape. Thus, it is possible to reduce the overall size of the lead frame compared to conventionally-known lead frames which are partially bent so as to form terminals and connections for covers.
Therefore, it is possible to reduce the necessary area for mounting the semiconductor chip I on an external substrate, whereby the semiconductor device I can be packaged at a high density without causing interference with the circuitry of the external substrate.
Next, a semiconductor device 97 according to a second embodiment of the present invention will be described with reference to
Compared to the semiconductor device 1 of the first embodiment in which the sound hole 54 is formed in the cover 8, the semiconductor device 97 of the second embodiment is designed such that a sound hole is formed in a package base 94.
Similar to the lead frame 5 of the first embodiment, the terminals 13 and 14 are disposed at two corners of the lead frame 71 of the second embodiment, which is not equipped with the terminal 12. The lead frame 71 is equipped with an additional terminal 75 which is disposed at approximately the center position in the vertical direction. Similar to the terminal 13 having no extension portion, the terminal 75 is formed in a rectangular shape, a part of which serves as an internal connection surface 76. Similar to the stage 11 of the first embodiment, the stage 72 has the extension portion 17, while it has another extension portion 77 which is straightened in shape in proximity to the terminal 75.
The backside of the stage 72 is largely subjected to half-etching (see hatching areas shown in
The lead frame 71 is subjected to press working, then, it is placed in an injection metal mold as shown in
When a melted resin is injected into the injection metal mold tightly holding the lead frame 71, a mold resin 91 is integrally formed with the lead frame 71 so as to form the package base 94 as shown in
A semiconductor device 100 according to a third embodiment of the present invention is designed based on the semiconductor device 97 of the second embodiment in which the sound hole 92 is formed in the package base 94 and is described with reference to
The semiconductor device 100 of the third embodiment is composed of a package 101 constituted of the cover 96 and a package base 102 in which a lead frame 103 having a stage 104 is sealed with a mold resin 105. As shown in
In the manufacturing of the package base 102, the small holes 107 of the sound hole 108 are simultaneously formed by way of half-etching on the lead frame 103. Similar to the lead frames 5 and 71 of the first and second embodiments, the lead frame 103 of the third embodiment is subjected to half-etching, which is performed using a mask having small holes in conformity with the sound hole 108, thus forming the small holes 107. In the injection molding of the mold resin 105 as shown in
The above structure allows the sound hole 108 to be efficiently formed by way of etching, which forms a part of the manufacturing method. Since small holes 107 are used to form the sound hole 108 and are each reduced in size, it is possible to reliably prevent foreign matter such as dust from entering into the internal space 55 of the package 101, and it is possible to reduce noise as well.
The present invention is not necessarily limited to the above embodiments, which can be modified in various ways.
The above embodiments are directed to semiconductor devices adapted to microphone packages; but this is not a restriction. The present invention can be applied to other types of sensors (other than microphones) such as quartz oscillators, high-frequency SWA filters, duplexers, solid image pickup devices, and MEMS devices (such as acceleration sensors, angular velocity sensors, magnetic sensors, pressure sensors, infrared sensors, micro-mirror arrays, silicon microphones, silicon oscillators, and RF-MEMS switches) as well as flow sensors, and wind pressure sensors. Microphones need through holes such as sound holes allowing the internal space to communicate with the external space, whereas some sensors do not need through holes, while flow sensors need two through holes.
In case of airtight-sealed and vacuum-sealed devices, for example, after an airtight-sealed devices such as a quartz oscillator is fixed to the package base 7, the cover 8 is bonded to the package base 7 in a vacuum sealing apparatus (not shown). It is possible to secure a sufficiently large contact area between the cover 8 and the package base 7 having the peripheral wall 42 and the extension portion 43. Only the internal connection surfaces 21 to 23 (corresponding to the surfaces of the terminals 12 to 14) and the internal connection surface 25 of the stage 11 are exposed inside the package 4 while the other areas of the package base 7 are sealed with the mold resin 4; hence, it is possible to seal the internal space formed by the package base 7 and the cover 8 in an airtight manner. Thus, the semiconductor package according to the present invention can be preferably applied to airtight-sealed and vacuum-sealed devices, whose internal spaces are sealed in an airtight manner and in a vacuum stage, such as quartz oscillators and SAW filters.
The above embodiments are each designed such that four external connection surfaces corresponding to the stage and terminals are formed for the purposes of power supply, output, gain control, and ground respectively, whereas the semiconductor device of the present invention needs at least three external connection surfaces for the purposes of power supply, output, and ground respectively, wherein it is possible to form two external connection surfaces for the purpose of ground. The number of terminals depends upon the number of semiconductor chips and the types of semiconductor chips, wherein the number of semiconductor chips installed in the semiconductor device is not necessarily limited to two. It is possible to increase the number of terminals connected to the external frame 10 by means of the connections 9, thus achieving five-terminal or six-terminal configuration, for example.
The above embodiments are each designed such that the lead frame is entirely retained in a flat shape while forming prescribed height differences (such as lower surfaces) by way of half-etching; but this is not a restriction. It is possible to form height differences (or irregularities) by way of embossing or coining, for example.
It is possible to form recesses which are formed to engage with external connection surfaces for use in the formation of the mold resin by the injection metal mold, thus forming the external connection surfaces and supports that project from the backside of the mold resin. In this case, the backside of the mold resin is floated above the surface of an external substrate. The above embodiments are each designed such that the cover is bonded to the package base via the conductive adhesive which is applied to the extension portion of the package base in advance; but this is not a restriction. It is possible to fix the cover to the package base via an adhesive sheet which is attached to the extension portion of the package base.
Lastly, the present invention is not necessarily limited to the above embodiments and variations, which can be further modified within the scope of the invention as defined by the appended claims.
Number | Date | Country | Kind |
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2008-090474 | Mar 2008 | JP | national |