Patent Application
20220106186
The present invention relates to the field of semiconductor technology and, in particular, to a micro-electro-mechanical system (MEMS) package structure and a method for fabricating it.
The development of very-large-scale integration (VLSI) is leading to increasing shrinkage of critical dimensions of integrated circuits, imposing more and more stringent requirements on integrated circuit packaging techniques. In the market for MEMS sensor packages, MEMS dies have been widely used in smart phones, fitness wristbands, printers, automobiles, drones, head-mounted VR/AR devices and many other products. Common MEMS dies include, among others, those for pressure sensors, accelerometers, gyroscopes, MEMS microphones, optical sensors and catalytic sensors. A MEMS die is usually integrated with another die using a system in package (SiP) approach to form a MEMS device. Specifically, the MEMS die is usually fabricated on one wafer and integrated with an associated control circuit that is formed on another wafer. Currently, the integration is usually accomplished by either of the following two methods: 1) separately bonding the MEMS die-containing wafer and the control circuit-containing wafer to a single packaging substrate and electrically connecting the MEMS die to the control circuit through wiring the MEMS die-containing wafer and the control circuit-containing wafer to solder pads on the substrate; and 2) directly bonding the MEMS die-containing to control circuit-containing wafer with corresponding solder pads thereof forming electrical connections so as to achieve electrical connections between the control circuit and the MEMS die.
However, the above first integration method requires reserved areas for the solder pads, which are often large and thus unfavorable to miniaturization of the resulting MEMS device. MEMS dies with different functions (or structures) are fabricated generally with different processes, and it is usually only possible to fabricate MEMS dies of the same function (or structure) on a single wafer. Therefore, for the above second integration method, it is difficult to form MEMS dies of different functions on a single wafer using semiconductor processes, and it will be complicated in process, costly and bulky in size of the resulting MEMS device to separately bond wafers containing MEMS dies of different functions to wafers containing respective control circuits and then interconnect them together. Thus, the current integration methods for MEMS dies and the resulting MEMS packages structure still fall short in meeting the requirements of practical applications in terms of size and function integration ability.
It is an object of the present invention to provide a MEMS package structure with a reduced size and a method of fabricating such a package structure. It is another object of the present invention to provide a MEMS package structure with enhanced function integration ability.
In one aspect of the present invention, there is provided a MEMS package structure, comprising:
a device wafer having a first bonding surface, wherein the device wafer has a control unit and an interconnection structure electrically connected to the control unit formed therein; a first contact pad arranged on the first bonding surface, wherein the first contact pad is electrically connected to the interconnection structure; a MEMS die bonded to the first bonding surface, wherein each of the MEMS dies comprises a micro-cavity, a second contact pad configured to be coupled to an external electrical signal and a second bonding surface in opposition to the first bonding surface, the micro-cavity of the MEMS die having a through hole in communication with an outside, the first contact pad electrically connected to a corresponding second contact pad; a bonding layer positioned between the first bonding surface and the second bonding surface so as to bond the MEMS die to the device wafer, wherein an opening is formed in the bonding layer; and an input-output connecting member arranged on the first bonding surface, wherein the input-output connecting member is exposed in the opening.
Optionally, a plurality of said MEMS dies may be bonded to the first bonding surface, wherein the MEMS dies are categorized in the same or different types depending on a fabrication process thereof.
Optionally, a plurality of MEMS dies are bonded to the first bonding surface, and wherein each of the plurality of MEMS dies has a micro-cavity in communication with the outside or at least one of the plurality of MEMS dies has a closed micro-cavity.
Optionally, the closed micro-cavity may be filled with a damping gas or is vacuumed.
Optionally, a plurality of MEMS dies are bonded to the first bonding surface, and wherein the plurality of MEMS dies include at least two of: a gyroscope, an accelerometer, an inertial sensor, a pressure sensor, a displacement sensor, a humidity sensor, an optical sensor, a gas sensor, a catalytic sensor, a microwave filter, a DNA amplification microchip, a MEMS microphone and a micro-actuator.
Optionally, the control unit may comprise one or more MOS transistors.
Optionally, the interconnection structure may comprise a conductive plug extending through at least a partial thickness of the device wafer and electrically connected to the control unit, and wherein the first contact pad is electrically connected to the conductive plug.
Optionally, the first contact pad may be electrically connected to the corresponding second contact pad via an electrical bump, and wherein the electrical bump is positioned between the first contact pad and the corresponding second contact pad, and is exposed in the opening.
Optionally, the MEMS package structure may further comprise:
an encapsulation layer located on the first bonding surface, wherein the encapsulation layer covers the MEMS die and fills the opening, and wherein the input-output connecting member and the through hole are exposed from the encapsulation layer.
Optionally, the bonding layer may comprise an adhesive material.
Optionally, the adhesive material may comprise a dry film.
Optionally, the micro-cavity may face a direction away from the second bonding surface.
Optionally, the input-output connecting member corresponds to the first contact pad and is electrically connected thereto.
In another aspect of the present invention, there is provided a method for fabricating a MEMS package structure, comprising:
providing a MEMS die and a device wafer for control of the MEMS die, wherein the device wafer has a first bonding surface, and wherein the device wafer has a control unit and an interconnection structure electrically connected to the control unit formed therein; forming a first contact pad and an input-output connecting member on the first bonding surface, wherein the first contact pad is electrically connected to the interconnection structure, wherein the MEMS die comprises a micro-cavity, a second contact pad configured to be coupled to an external electrical signal and a closed second bonding surface, the micro-cavity of the MEMS die having a through hole in communication with an outside; bonding the MEMS die to the device wafer through a bonding layer positioned between the first bonding surface and the second bonding surface, wherein the bonding layer has an opening formed therein, wherein the first contact pad, the second contact pad corresponding to the first contact pad and the input-output connecting member are exposed in the opening; establishing an electrical connection between the first contact pad and the corresponding second contact pad.
Optionally, the interconnection structure may comprise a conductive plug, wherein the conductive plug extends through at least a partial thickness of the device wafer and is electrically connected to the control unit, and wherein the first contact pad is electrically connected to a corresponding conductive plug.
Optionally, establishing the electrical connection between the first contact pad and the corresponding second contact pad comprises: forming an electrical bump between the first contact pad and the corresponding second contact pad using an electroless plating process, wherein the electrical bump is exposed in the opening.
Optionally, the method may further comprise, subsequent to bonding the MEMS die to the device layer using the bonding layer and prior to forming the electric bump in the opening:
forming a sacrificial layer to cover the through hole.
Optionally, the method may further comprise, subsequent to forming the electrical bump:
forming an encapsulation layer on the first bonding surface, wherein the encapsulation layer covers the MEMS die and fills the opening; and removing a part of the encapsulation layer and the sacrificial layer to expose the through hole and the input-output connecting member.
A MEMS package structure is provided in the present invention. The device wafer has a control unit and an interconnection structure electrically connected to the control unit arranged therein. A first contact pad and an input-output connecting member are arranged on the first bonding surface of the device wafer. The MEMS die has a micro-cavity, a second contact pad configured to be coupled to an external electrical signal and a second bonding surface in opposition to the first bonding surface, the micro-cavity of the MEMS die having a through hole in communication with an outside. A bonding layer is positioned between the first bonding surface and the second bonding surface so as to bond the MEMS die to the device wafer. The first contact pad is electrically connected to a corresponding second contact pad. An opening is formed in the bonding layer and the input-output connecting member is exposed in the opening. The MEMS package structure allows an electrical interconnection between the MEMS die and the device wafer with a reduced package size, compared to those produced by existing integration methods. The input-output connecting member may be configured to be coupled to the external signal. Moreover, the MEMS package structure may include a plurality of MEMS dies of the same or different functions and structures. Therefore, in addition to size shrinkage, the MEMS package structure is also improved in terms of function integration ability.
A method for fabricating a MEMS package structure is provided in the present invention, wherein a first contact pad and an input-output connecting member are formed on the first bonding surface of the device wafer; the first contact pad is electrically connected to the interconnection structure, wherein the MEMS die comprises a micro-cavity, a second contact pad configured to be coupled to an external electrical signal and a second bonding surface, the micro-cavity of the MEMS die having a through hole in communication with an outside; bonding the MEMS die to the device wafer through a bonding layer; the bonding layer has an opening formed therein, wherein the first contact pad, a corresponding second contact pad and the input-output connecting member are exposed in the opening; then establishing an electrical connection between the exposed first contact pad and the corresponding second contact pad. Thus, achieving an electrical interconnection between the MEMS die and the device wafer with a reduced package size, compared to those produced by existing integration techniques. Moreover, a plurality of MEMS dies of the same or different functions and structures may be integrated on a same device wafer. Therefore, in addition to size shrinkage, the MEMS package structure is also improved in terms of function integration ability.
100: a device wafer; 100a: a first bonding surface; 101: a substrate; 102: an isolation structure; 103: a first dielectric layer; 104: a second dielectric layer; 200: a MEMS die; 210: a micro-cavity; 210a: a through hole; 220: a second contact pad; 230: a sacrificial layer; 300: an interconnection structure; 310: a conductive plug; 410: a first contact pad; 420: an input-output connecting member; 500: a bonding layer; 510: an opening; 501: an encapsulation layer; 600: an electrical bump.
The present invention will be described below in greater detail by way of particular embodiments with reference to the accompanying drawings. Features and advantages of the invention will be more apparent from the following description. Note that the accompanying drawings are provided in a very simplified form not necessarily drawn to exact scale, and their only intention is to facilitate convenience and clarity in explaining the disclosed embodiments.
In the following, the terms “first”, “second”, and so on may be used to distinguish between similar elements without necessarily implying any particular ordinal or chronological sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Similarly, if a method is described herein as comprising a series of steps, the order of such steps as presented herein is not necessarily the only order in which such steps may be performed, and certain of the stated steps may possibly be omitted and/or certain other steps not described herein may possibly be added to the method. Identical components or features may be shown in different accompanying drawings, and not all such components and features are labeled in each drawing for the sake of visual clarity, even if they are readily identifiable in all the drawings.
Referring to
The MEMS package structure may include a plurality of said MEMS dies 200, which are bonded to the first bonding surface 100a and are driven by, or operate under the control of, respective said control units that are corresponding to the plurality of said MEMS dies 200 and are arranged in the device wafer 100. The device wafer 100 may be formed, for example, by fabricating the plurality of control units in a substrate 101 (e.g., a silicon substrate), using a semiconductor process. The substrate 101 may be, among others, a silicon substrate or a silicon-on-insulator (SOI) substrate. Examples of materials from which the substrate 101 can be fabricated may also include germanium, silicon germanium, silicon carbide, gallium arsenide, indium gallium and other Group III and V compounds. Preferably, the substrate 101 is selected as a substrate allowing relatively easy semiconductor processing or integration. The control units may be formed on the basis of the substrate 101.
Each control unit may include one or more MOS transistors, and in the latter case, adjacent said MOS transistors may be isolated from one another by isolation structure(s) 102 formed in the device wafer 100 (or in the substrate 101) and by an insulating material deposited on the substrate 101. Each isolation structure 102 may be, for example, a shallow trench isolation (STI) and/or deep trench isolation (DTI) structure. As an example, the control unit may control the MEMS die 200 by a control electrical signal output from a source/drain of one of the MOS transistor(s). In this embodiment, the device wafer 100 further comprises a first dielectric layer 103 formed on one of the surfaces of the substrate 101, and the source/drain of the MOS transistor of the control unit for outputting a control electrical signal (i.e., serving as an electrical connection terminal) is arranged in the first dielectric layer 103. On the other surface of the substrate 101, a second dielectric layer 104 is formed. Each of the first and second dielectric layers 103, 104 may be formed of at least one material selected from insulating materials including silicon oxide, silicon nitride, silicon carbide and silicon oxynitride. In this embodiment, the surface of the first dielectric layer 103 away from the substrate 101 may serve as the first bonding surface 100a of the device wafer 100.
In order to electrically interconnect the MEMS die 200 and the control unit in the device wafer 100, in this embodiment, an interconnection structure 300 is provided in the device wafer 100 and is electrically connected to each of the first contact pad 410 on the first bonding surface 100a and the control unit in the device wafer 100. Specifically, referring to
In case of a plurality of MEMS dies 200 being integrated, they may be of the same or different functions, uses or structures. MEMS dies for various MEMS devices such as gyroscopes, accelerometers, inertial sensors, pressure sensors, humidity sensors, displacement sensors, gas sensors, catalytic sensors, microwave filters, optical sensors (e.g., MEMS scanning mirrors, ToF image sensors, photodetectors, vertical-cavity surface-emitting lasers (VCSEL), diffractive optical elements (DOE)), DNA amplification microchips, MEMS microphones, micro-actuators (e.g., micro-motors, micro-resonators, micro-relays, micro-optical/RF switches, optical projection displays, flexible skins, micro-pump/valves) can be fabricated on separate substrates (e.g., silicon wafers) using MEMS die fabrication processes well known in the art and then diced into individual MEMS dies. In this embodiment, at least two types are selected to serve as the MEMS die 200. In practical implementations, depending on the design requirements or the intended use, a number or plurality of MEMS dies 200 of different types may be selected and arranged on the first bonding surface 100a of the device wafer 100. For example, MEMS dies 200 of the same or different sensing functions may be bonded to the first bonding surface 100a of the device wafer 100. It is to be understood that while the description of this embodiment focuses on the MEMS package structure including the device wafer 100 and a MEMS die 200 arranged on the first bonding surface 100a thereof, it does not imply that the MEMS package structure of the present embodiment is only made up of these components because the device wafer 100 may be further provided with one or more different chips arranged thereon or bonded thereto (e.g., memory chips, communication chips, processor chips, etc.), one or more different devices arranged thereon (e.g., power devices, bipolar devices, resistors, capacitors, etc.) and/or components and connection means well known in the art. The present invention is not limited to only one MEMS die being bonded to the device wafer 100, as two, three or more MEMS dies can be bonded thereto. In the latter case, structures and/or types of these MEMS dies 200 may vary depending on the actual requirements. In addition, the first contact pads 410 and the second contact pads 220 described in this embodiment may be solder pads or other connecting components for electrical connection. In order to demonstrate improved function integration ability of the MEMS package structure, the MEMS dies are preferred to be fabricated using fabricating processes that are not completely the same, or to be of functions (or uses) that are not completely the same.
In this embodiment, the plurality of MEMS dies 200 may be arranged side by side on the first bonding surface 100a of the device wafer 100. Each of the MEMS dies 200 may have a micro-cavity 210, a second contact pad 220 configured to be coupled to the external signal and a second bonding surface 200a in opposition to the first bonding surface 100a. The micro-cavity of at least one of the MEMS dies 200 has a through hole 210a (for example, an air inlet MEMS) in communication with the outside. Each of the plurality of MEMS dies 200 has an opening in communication with the outside, or at least one of the MEMS dies 200 has a closed micro-cavity 210. The closed micro-cavity 210 may be filled with damping gas or in a vacuum state. For example, the two MEMS dies 200 shown in
The MEMS die(s) 200 may be bonded to the first bonding surface 100a of the device wafer 100 by a bonding layer 500 (if a plurality of MEMS dies 200 are present, they may be arranged on the first bonding surface 100a side by side). In addition, the second contact pad 220 of the MEMS die 200 may be electrically connected to an associated first contact pad 410 on the first bonding surface 100a of the device wafer 100, for example, via an electrical bump 600 arranged between the first contact pad 410 and corresponding second contact pad 220. A plurality of electrical bumps 600 may be provided so as to connect second contact pad 220 of each MEMS die 200 to corresponding first contact pad 410 of the device wafer 100.
The bonding layer 500 may be configured to fixedly bond the plurality of MEMS dies 200 to the device wafer 100. Specifically, the bonding layer 500 may be arranged between the first bonding surface 100a of the device wafer 100 and the second bonding surfaces 200a of the MEMS dies 200. Openings 510 may be formed in the bonding layer 500, in which the respective electrical bumps 600 and the input-output connecting member are exposed.
Examples of suitable materials for the bonding layer 500 may include oxides or other materials. For example, the bonding layer 500 may be a bonding material that bonds the second bonding surfaces 200a of the plurality of MEMS dies 200 to the first bonding surface 100a of the device wafer 100 by fusing bonding, vacuum bonding or otherwise. Examples of suitable materials for the bonding layer 500 may also include adhesive materials. In this case, for example, the bonding layer 500 may be a die attach film (DAF) or a dry film, which glues the plurality of MEMS dies to the device wafer 100 by adhesion. In this embodiment, the bonding layer 500 is preferably a dry film which is an adhesive photoresist film where a polymerization reaction can take place in the presence of ultraviolet radiation and produce a stable substance that adheres to a surface to be bonded. The dry film has the advantages of electroplating and etching resistance. The dry film may be so applied to the second bonding surfaces 200a of the MEMS dies 200 that the second contact pads 220 are exposed from the dry film, allowing the second contact pads 220 to be subsequently electrically connected to the respective first contact pads 410 of the device wafer 100 more easily. The second contact pad 220 of MEMS die 200 may be arranged, for example, at a location of the second bonding surface 200a of the MEMS die that is close to an edge of the second bonding surface 200a. In this way, the second contact pads 220 can be exposed when the openings 510 are formed in the bonding layer 500 at the edge of the MEMS die 200 or between the plurality of MEMS dies 200.
In this embodiment, the MEMS package structure may further include an encapsulation layer 501, which covers the MEMS die 200 bonded to the device wafer 100 as well as the aforementioned bonding layer 500, and exposes the input-output connecting member located on the first bonding surface 100a and the through hole 210a of the micro-cavity 210 of the MEMS die 200 to communicate with the outside. The encapsulation layer 501 may be provided on the side of the first surface 100a of the device wafer 100 in order to more firmly fix the MEMS die to the device wafer 100 and protect it from external damage. The encapsulation layer 501 may be formed of, for example, a plastic material. For example, an injection molding process may be employed to fill the plastic material in gap(s) between the plurality of MEMS dies and fix the plurality of MEMS dies to the bonding layer 500. The plastic material of the encapsulation layer 501 may be in a softened or flowable form during the molding and may be molded in a predetermined shape. Alternatively, the material of the encapsulation layer 501 may solidify by chemical crosslinking. As an example, the material of the encapsulation layer 501 may include, for example, at least one of thermosetting resins including phenolic resins, urea-formaldehyde resins, formaldehyde-based resins, epoxy resins, unsaturated resin, polyurethanes, polyimide and so on. Preferably, the material of the encapsulation layer 501 is selected as an epoxy resin. In the epoxy resin, a filler may be included, as well as one or more of various additives (e.g., curing agents, modifiers, mold release agents, thermal color agents, flame retardants, etc). For example, a phenolic resin may be added as a curing agent and a micro-powder consisting of solid silicon particles as a filler.
The MEMS package structure allows electrical interconnection between the MEMS die(s) 200 and the device wafer 100 with a reduced package size, compared to those produced by existing integration method. In addition, a plurality of MEMS dies 200 of the same or different functions (uses) and structures are allowed to be integrated on the same device wafer 100. Therefore, in addition to size shrinkage, the MEMS package structure is also improved in terms of function integration ability.
In embodiments of the present invention, there is provided a method for fabricating a MEMS package structure as defined above. Steps for fabricating the MEMS package structure are as follows:
step 1: providing a MEMS die and a device wafer for control of the MEMS die; the device wafer has a first bonding surface. A control unit and an interconnection structure electrically connected to the control unit are formed in the device wafer.
step 2: forming a first contact pad and an input-output connecting member on the first bonding surface, which is electrically connected to the interconnection structure; the MEMS die includes a micro-cavity, a second contact pad for coupling to an external electrical signal and a closed second bonding surface; the micro-cavity of the MEMS die has an through hole in communication with the outside.
step 3: bonding the MEMS die to the device wafer by a bonding layer arranged between the first bonding surface and the second bonding surface; an opening is formed in the bonding layer, in which the first contact pad, the second contact pad corresponding to the first contact pad and the plurality of input-output connecting members are exposed.
step 4: establishing an electrical connection between the first and second contact pads.
A more detailed process for fabricating a MEMS package structure in accordance with embodiments of the present invention will be described with reference to
Specifically, in this embodiment, the device wafer 100 may include a substrate 101, which is a silicon substrate or silicon-on-insulator (SOI) substrate, for example. In this embodiment, a plurality of MEMS dies are integrated in the same device wafer and a plurality of control units may be accordingly formed in the device wafer 100. The plurality of control units may be formed on the basis of the substrate 101 using an established semiconductor process in order to subsequently control the plurality of MEMS dies. Each control unit may consist of a set of CMOS control circuits. For example, each control unit may include one or more MOS transistors, and in the latter case, adjacent said MOS transistors may be isolated from one another by isolation structure(s) 102 formed in the substrate 101 (or in the device wafer 100) and by an insulating material covered on the substrate 101. The isolation structure 102 may be, for example, a shallow trench isolation (STI) and/or deep trench isolation (DTI) structure. The device wafer 100 may further include a first dielectric layer 103 formed on one surface of the substrate 101 and a second dielectric layer 104 formed on the surface of the other side of the substrate 101. A connection terminal of each control unit for outputting a control electrical signal may be arranged in the first dielectric layer 103. In this embodiment, the surface of the first dielectric layer 103 away from the substrate 101 serves as the bonding surface 101a of the device wafer 100. In another embodiment, the surface of the second dielectric layer 104 away from the substrate 101 may serve as the bonding surface 101a of the device wafer 100. The device wafer 100 may be fabricated using a method known in the art.
The interconnection structure 300 may include, formed within the device wafer 100, two or more electrical contacts, electrical connection members and electrical connection lines therebetween. In this embodiment, the interconnection structure 300 in the device wafer 100 may include a conductive plug 310 which penetrates through at least a partial thickness of the device wafer 100 and is electrically connected to a corresponding control unit in the device wafer 100. During integration of the plurality of MEMS dies, a plurality of conductive plugs 310 are formed in the device wafer 100. The conductive plug 310 may be formed of a conductive material selected as a metal or alloy containing cobalt, molybdenum, aluminum, copper, tungsten or the like, or as a metal silicide (e.g., titanium silicide, tungsten silicide, cobalt silicide, or the like), a metal nitride (e.g., titanium nitride), doped polysilicon, or the like.
The plurality of MEMS dies 200 may be of the same or different functions, uses or structures. In this embodiment, in order for the MEMS package structure to be versatile or multi-functional, the MEMS dies 200 to be integrated are preferably of two or more different types. For example, the MEMS dies 200 may be at least two selected from those for a gyroscope, an accelerometer, an inertial sensor, a pressure sensor, a flow sensor, a displacement sensor, a humidity sensor, an optical sensor, a gas sensor, a catalytic sensor, a microwave filter, a DNA amplification microchip, a MEMS microphone, and a micro-actuator. In this embodiment, each MEMS die 200 may be an independent chip (or die) with a micro-cavity 210 serving as a sensing component and a contact pad 220 for receiving an external electrical signal (for controlling operation of the MEMS die). The micro-cavity 210 of each of the MEMS dies 200 may communicate with the outside (such as the atmosphere) or the micro-cavity of part of the MEMS dies may communicate with the outside and the micro-cavity of part of the MEMS dies may be closed (as shown in
The first contact pads 410 and the input-output connecting members 420 may be formed using the same film-forming and patterning process. For example, a metal layer may be deposited on the first bonding surface 100a of the device wafer 100. The metal layer may be formed of the same material as that of the conductive plug 310 by physical vapor deposition (PVD), atomic layer deposition (ALD) or chemical vapor deposition (CVD) and then patterned to form the first contact pads 410 and the input-output connecting members 420. The first contact pads 410 are electrically connected to the interconnection structures 300 to lead electrical signals of the control units. The input-output connecting member 420 is used to connect to the external signal or device of the MEMS package structure to process or control the circuit signal connected thereto. As an example, the multiple input-output connecting members 420 and the multiple first contact pads 410 are in one-to-one correspondence and are electrically connected, so that the electrical signals at the multiple first contact pads 410 can be processed or controlled through the multiple input-output connecting members 420.
Optionally, the bonding of the plurality of MEMS dies 200 to the device wafer 100 may be accomplished with, for example, a fusing bonding process or vacuum bonding process. In this case, the bonding layer 500 may be formed of a bonding material (e.g., silicon oxide). Alternatively, the bonding of the plurality of MEMS dies 200 to the device wafer 100 may be accomplished by both a bonding process and a light (or thermal) curing process. In this case, the bonding layer 500 may include an adhesive material, in particular, a die attach film or a dry film. The plurality of MEMS dies may be bonded one by one, or the plurality of MEMS dies may be transferred to one or more carrier plates and then bonded onto the device wafer 100 at the same time or in batches.
In an optional embodiment, during the bonding of the MEMS dies 200 to the device wafer 100, the bonding material may be applied only to intended locations of the device wafer 100 such that the second contact pads 220, the corresponding first contact pads 410 and the input-output connecting member 420 remain exposed, thus resulting in the formation of the openings 510 in the bonding layer 500. In an alternatively embodiment, during the bonding of the MEMS dies 200 to the device wafer 100, the bonding material may be applied to both the first bonding surface 100a and the second bonding surfaces 200a, followed by the formation of the openings 510 in which the second contact pads 220, the first contact pads 410 and the input-output connecting member 420 are exposed, for example, using a dry etching process. The openings 510 in the bonding layer 500 are formed in order to enable connection of the first contact pads 410 of the control units in the device wafer 100 to the respective second contact pads 220 in the MEMS dies 200 between the first bonding surface 100a and the second bonding surface 200a.
In this embodiment, the first contact pads 410 and the respective second contact pad 220 are exposed in the openings 510 formed in the bonding layer 500, and electrical bumps 600 may be formed between the first and second contact pads 410, 220 to connect them together. The remaining part of the openings 510 are not filled up and the electrical bumps 600 are exposed in the openings 510.
The formation of the electrical bumps 600 may be accomplished using an electroless plating involving, for example, placing the device wafer 100 with the plurality of MEMS dies 200 bonded thereon and with the openings 510 formed in the bonding layer 500 into a solution containing metal ions (e.g., a solution for electroless plating of silver, nickel, copper or the like), where the metal ions are reduced by a strong reducing agent into the corresponding metal which is deposited onto the first contact pads 410 and the respective second contact pads 220 exposed in the openings 510. After the lapse of a certain length of time, the metal connects the first contact pad 410 to the respective second contact pads 220, thus resulting in the formation of the electrical bumps 600. Examples of suitable materials for the electrical bumps 600 may include one or more of copper, nickel, zinc, tin, silver, gold, tungsten and magnesium. The electroless plating process may further involve, before the placement into the solution containing metal ions, depositing a seed layer at intended locations in the openings 510 where the electrical bumps 600 are to be formed.
Forming the electrical bumps 600 between the first bonding surface 100a and the second bonding surfaces 200a enables electrical connection between the first contact pads 410 and the respective second contact pads 220 without the need for wire bonding. This is conducive to size shrinkage of the MEMS package structure and can improve its reliability by not affecting the inside of the device wafer 100.
Examples of suitable materials for the encapsulation layer 501 may include: inorganic insulating materials, such as silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, etc.; thermoplastic resins, such as polycarbonate, polyethylene terephthalate, polyethersulfone, polyphenylether, polyamides, polyetherimides, methacrylic resins, cyclic polyolefin based resins, etc.; thermosetting resins, such as epoxy resins, phenolic resins, urea-formaldehyde resins, formaldehyde-based resins, polyurethanes, acrylic resins, vinyl ester resins, imide based resins, urea resins, melamine resins, etc.; and organic insulating materials, such as polystyrene, polyacrylonitrile, etc. The encapsulation layer 501 may be formed using, for example, a chemical vapor deposition process or an injection molding process. Preferably, the formation of the encapsulation layer 501 further involves a planarization process performed on the side of the device wafer 100 with the bonding layer 500, so that part of the sacrificial layer 230 covering the through hole 210a is preferably exposed from the encapsulation layer 501 to facilitate open of the covered through hole 210a of the micro-cavity 210 after the sacrificial layer 230 is removed directly.
Specifically, for example, a dry etching process may be used to remove part of the encapsulation layer 501 and the sacrificial layer 230. After the sacrificial layer 230 is removed, the through hole 210a on the micro-cavity 210 communicating with the outside is exposed (or opened), so that the micro-cavity 210 corresponding to MEMS die 200 communicates with the outside of the chip to facilitate the normal operation of the chip. After this step, the input-output connecting members 420 on the first bonding surface 100a of the device wafer 100 are also exposed, so that they can be used for connection with the control/processing signals outside the MEMS package structure.
After the above steps, the formed MEMS package structure is shown in
By the method of fabricating a MEMS package structure according to the above embodiment, an electrical interconnection between the MEMS die 200 and device wafer 100 is achieved. This allows a reduced package structure size, compared with those produced by existing integration methods. In addition, the plurality of MEMS dies integrated on the same device wafer may be of the same or different functions (uses) and structures. Therefore, in addition to size shrinkage, the MEMS package structure is also improved in terms of function integration ability.
Described above are merely several preferred embodiments of the present invention, which are not intended to limit the present invention in any sense. In light of the principles and teachings hereinabove, any person of skill in the art may make various possible variations and changes to the disclosed embodiments, without departing from the scope of the invention. Accordingly, any and all such simple variations, equivalent alternatives and modifications made to the foregoing embodiments without departing from the scope of the invention are intended to fall within the scope thereof.
| Number | Date | Country | Kind |
|---|---|---|---|
| 201811614217.6 | Dec 2018 | CN | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/CN2019/115612 | 11/5/2019 | WO | 00 |
