Claims
- 1. A metallization composite for connecting a solder contact to a semiconductor substrate comprising:
- a layer of refractory metal having a thickness of 300-1500 Angstroms, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium;
- a layer of nickel having a thickness of 400-1000 Angstroms overlying said refractory metal layer; and
- a layer of copper having a thickness of 2000-20000 Angstroms overlying said nickel layer.
- 2. The metallization composite of claim 1 further comprising a layer of gold having a thickness of at least 700 Angstroms overlying said copper layer.
- 3. The metallization composite of claim 1 further comprising a refractory metal/nickel intermetallic layer between said layer of a refractory metal and said layer of nickel.
- 4. The metallization composite of claim 1 further comprising a nickel/copper intermetallic layer between said layer of nickel and said layer of copper.
- 5. The metallization composite of claim 1 wherein said refractory metal comprises titanium.
- 6. A semiconductor device comprising:
- a semiconductor substrate having a top surface thereof; and
- a metallization composite overlying said top surface;
- wherein said metallization composite comprises a layer of a refractory metal having a thickness of 300-1500 Angstroms overlying said top surface, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said layer of a refractory metal; and a layer of copper having a thickness of 2000-20000 Angstroms overlying said layer of nickel.
- 7. A semiconductor device comprising:
- a semiconductor substrate having a top surface thereof;
- a metal layer overlying said top surface of said semiconductor substrate;
- an insulation layer overlying said metal layer, said insulation layer having an opening therein to said metal layer;
- a metallization composite overlying said insulation layer and occupying said opening in said insulation layer, said metallization composite thereby contacting said metal layer; and
- a lead-tin solder layer overlying said metallization composite;
- wherein said metallization composite comprises a layer of a refractory metal having a thickness of 300-1500 Angstroms overlying said insulation layer, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said layer of a refractory metal; and a layer of copper having a thickness of 2000-20000 Angstroms overlying said layer of nickel and underlying said lead-tin solder layer.
- 8. The semiconductor device of claim 7 wherein said semiconductor substrate comprises a silicon wafer.
- 9. The semiconductor device of claim 7 wherein said metal layer comprises aluminum.
- 10. The semiconductor device of claim 7 wherein said insulation layer is selected from the group consisting of silicon nitride, silicon dioxide, and polyimide.
- 11. A metallization composite for connecting a solder contact to a semiconductor substrate comprising:
- a layer of refractory metal having a thickness of 300-1500 Angstroms, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium;
- a layer of nickel having a thickness of 400-1000 Angstroms overlying said refractory metal layer;
- a layer of copper having a thickness of 2000-20000 Angstroms overlying said nickel layer; and
- a layer of gold having a thickness of at least 700 Angstroms overlying said copper layer.
Parent Case Info
This is a continuation of application Ser. No. 07/881,097, filed May 11, 1992, now abandoned.
US Referenced Citations (10)
Foreign Referenced Citations (4)
Number |
Date |
Country |
2930779 |
Feb 1980 |
DEX |
56-37624 |
Apr 1981 |
JPX |
58-15254 |
Jan 1983 |
JPX |
60-119749 |
Jun 1985 |
JPX |
Non-Patent Literature Citations (1)
Entry |
L. F. Miller, IBM Technical Disclosure Bulletin, vol. 16, No. 1, p. 39 (Jun. 1973). |
Continuations (1)
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Number |
Date |
Country |
Parent |
881097 |
May 1992 |
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