1. Field of Invention
This invention relates to a method and device of ion source generation and, in particular, the method and device can enhance the implanting efficiency of a shallow ion implantation.
2. Background of the Related Art
As shown in
A target base 510 and a Faraday cup 600 are configured in the implantation chamber 500, and a wafer 520 is settled on the target base 510. The ion beam 610 collides with the wafer 520 with a specific collision depth, which proportionally depends on the kinetic energy of the ions/ion cluster of the ion beam 610. The implanting efficiency proportionally depends on the current of the ion beam 610, and an ion beam current detector 700, which electrically couples with the Faraday cup 600, can detect the current. The current detector 700 can be implemented by an ampere meter.
An ion cluster will distribute averagely the energy to each ion of the ion cluster, so the ion implanting energy should be reduced to be suitable for a shallow ion implantation.
It is very important to keep a high ratio ion cluster for obtaining a high ion beam current, and a skill is proposed in this invention.
It is an object of this invention to provide a method and a device of ion source generation. The method uses a temperature controller to read an ion beam current detected by an ion beam current detector and a temperature of the source chamber sensed by a thermometer to adjust a cooling system for controlling the source chamber temperature, so a specific ratio of ion cluster in the source chamber can be obtained.
The cooling system 800 and the temperature sensor 810 are disposed on the shell of the source chamber 200 to sense the temperature of the source chamber 200, and to control the temperature of the source chamber 200 efficiently, respectively.
The temperature controller 900 electrically connects to the temperature sensor 810 and an ion beam current detector 700, such as an ampere meter, to obtain the temperature of the source chamber 200 and the current of the ion beam 610. According to the relationship of the temperature and the ion beam current, the temperature controller 900 adjusts the fluid flow rate of the cooling system 800 to control the temperature of the source chamber 200 to be within a range. Therefore the ion beam current I can be controlled to stay above a minimum threshold ion beam current Im, where the minimum threshold ion beam current Im may be predetermined or a current value within a range from 90% to 95% of the maximum ion beam current.
According to an embodiment of this invention, a method of controlling the ion source generation is illustrated and the flow chart is shown in
During the period of heating the source chamber 200 (increasing the temperature T), the ion beam current detector 700 detects the current of the Faraday cup and the temperature controller 900 reads the detected ion beam current and compares it with the minimum threshold ion beam current Im(step S10). According to the comparison results, when the temperature controller 900 determines that the current I has come to or fallen below Im and, in the meanwhile, the temperature T has gone to or risen up above a maximum threshold temperature TM (as shown in
During the period of cooling the source chamber 200 (reducing the temperature T), the temperature controller 900 continuously reads temperature T sensed by the temperature sensor 810, denoted as step S30, and compares the temperature T with a minimum threshold temperature Tm (as shown in
According to the above, the temperature T of the source chamber 200 can be controlled in a range from the minimum threshold temperature Tm to the maximum threshold temperature TM, denoted Tm≦T≦TM. Within this temperature range, the current can be hold above the minimum threshold ion beam current Im and approaches the maximum, so the method can improve the ion implanting efficiency of a shallow ion implantation.
Although this invention has been explained in relation to its preferred embodiment, it is to be understood that modifications and variation can be made without departing the spirit and scope of the invention as claimed.
Number | Date | Country | Kind |
---|---|---|---|
97104687 A | Feb 2008 | TW | national |
Number | Name | Date | Kind |
---|---|---|---|
7064491 | Horsky et al. | Jun 2006 | B2 |
7609003 | Horsky et al. | Oct 2009 | B2 |
20080067412 | Vanderberg et al. | Mar 2008 | A1 |
Number | Date | Country | |
---|---|---|---|
20090194704 A1 | Aug 2009 | US |