Method for fabricating a fan-in leadframe semiconductor package

Information

  • Patent Grant
  • 7473584
  • Patent Number
    7,473,584
  • Date Filed
    Monday, March 12, 2007
    19 years ago
  • Date Issued
    Tuesday, January 6, 2009
    17 years ago
Abstract
A semiconductor package comprising a plurality of elongate leads which each have opposed inner and outer ends, opposed first and second surfaces, and a third surface which is disposed in opposed relation to the first surface and recessed relative to the second surface. The second surface of each lead is positioned in close proximity to the inner end thereof. The third surface of each lead extends to the outer end thereof. A semiconductor die is attached to portions of the first surfaces of at least some of the leads. The semiconductor die is itself electrically connected to at least some of the leads. A package body covers the semiconductor die and the leads such that the second surfaces of the leads are exposed in a bottom surface of the package body and the outer ends of the leads are exposed in respective side surfaces of the package body.
Description
STATEMENT RE: FEDERALLY SPONSORED RESEARCH/DEVELOPMENT

Not Applicable


BACKGROUND OF THE INVENTION

The present invention relates generally to integrated circuit chip package technology and, more particularly, to a unique fan-in leadframe design for a semiconductor package which provides a reduced land footprint thus improving solder joint reliability, and further simplifies motherboard routing due to the availability of free space under the semiconductor package outside of the land pattern.


Integrated circuit or semiconductor dies are conventionally enclosed in plastic packages that provide protection from hostile environments and enable electrical interconnection between the semiconductor die and an underlying substrate such as a printed circuit board (PCB) or motherboard. The elements of such a package include a metal leadframe, a semiconductor die, bonding material to attach the semiconductor die to the leadframe, bond wires which electrically connect pads or terminals on the semiconductor die to individual leads of the leadframe, and a hard plastic encapsulant material which covers the other components and forms the exterior of the package often referred to as the package body.


The leadframe is the central supporting structure of such a semiconductor package. A portion of the leadframe is internal to the package, i.e., completely surrounded by the plastic encapsulant. Portions of the leads of the leadframe extend externally from the package or are partially exposed within the encapsulant material for use in electrically connecting the package to another component.


In certain semiconductor package designs, the bottom surface of each of the leads of the leadframe is exposed within the bottom surface of the package body formed by the hardening of the encapsulant material. In this design, solderable surfaces are provided on only the bottom surface of the package body and, more particularly, by the exposed bottom surfaces of the leads which are often referred to as lands. This type of semiconductor package is typically attached to the printed circuit board or motherboard by printing solder paste on the board, positioning the exposed bottom surfaces of the leads upon the solder paste, and completing a hot reflow process.


One major drawback associated with the above-described semiconductor package design is the relatively large land footprint which results in certain situations, such as when a large semiconductor die is integrated into the package. This increased land footprint causes increased stress in the solder joints during temperature cycling and further complicates motherboard routing due to the increased amount of space needed to accommodate the semiconductor package. The present invention eliminates this deficiency by providing a semiconductor package having a fan-in leadframe and adapted to accommodate a large semiconductor die. The fan-in semiconductor package of the present invention provides a reduced land footprint, thereby improving solder joint reliability due to a reduction in stress on solder joints during temperature cycling. The reduced land footprint also allows for easier motherboard routing due to free space being available under the semiconductor package outside of the land pattern. These, as well as other features and advantages of the present invention, will be discussed in more detail below.


BRIEF SUMMARY OF THE INVENTION

In accordance with the present invention, there is provided a semiconductor package having a uniquely configured fan-in leadframe which is adapted to allow the semiconductor package to have a reduced land footprint or pattern despite accommodating a large semiconductor die. The reduced land footprint of the semiconductor package attributable to the inclusion of the fan-in leadframe improves solder joint reliability by reducing stress on solder joints during temperature cycling. The reduced land footprint also provides easier motherboard routing due to the free space available under the semiconductor package outside of the land pattern.


The present invention is best understood by reference to the following detailed description when read in conjunction with the accompanying drawings.





BRIEF DESCRIPTION OF THE DRAWINGS

These, as well as other features of the present invention, will become more apparent upon reference to the drawings wherein:



FIG. 1 is a cross-sectional view of a fan-in semiconductor package constructed in accordance with a first embodiment of the present invention;



FIG. 2 is a partial bottom plan view of the fan-in leadframe integrated into the semiconductor package shown in FIG. 1;



FIG. 3 is a bottom plan view of a fan-in leadframe constructed in accordance with a second embodiment of the present invention and having a semiconductor die mounted thereto;



FIG. 4 is a cross-sectional view of a fan-in semiconductor package constructed in accordance with a third embodiment of the present invention; and



FIG. 5 is a partial bottom plan view of the fan-in leadframe integrated into semiconductor package shown in FIG. 4.





Common reference numerals are used throughout the drawings and detailed description to indicate like elements.


DETAILED DESCRIPTION OF THE INVENTION

Referring now to the drawings wherein the showings are for purposes of illustrating preferred embodiments of the present invention only, and not for purposes of limiting the same, FIG. 1 depicts a fan-in semiconductor package 10 constructed in accordance with a first embodiment of the present invention. The semiconductor package 10 comprises a fan-in leadframe 12, a partial bottom plan view of which is shown in FIG. 2. The leadframe 12 includes an outer frame 14 having a generally quadrangular (e.g., square, rectangular) configuration. In this regard, the outer frame 14 defines two pairs of opposed sides, with one such pair being labeled with the reference numerals 16 in FIG. 2. Due to the configuration of the outer frame 14, the pair of opposed sides 16 thereof extend in spaced, generally parallel relation to each other.


As further seen in FIG. 2, integrally connected to and extending inwardly from each of the opposed sides 16 of the outer frame 14 are a plurality of elongate leads 18. In this regard, the leads 18 are segregated into two sets, with the leads 18 of each such set being integrally connected to a respective one of the opposed sides 16. The leads 18 of each set are not of equal size, but rather are of at least two different lengths. Additionally, the leads 18 of each set are preferably arranged along a respective side 16 in a staggered pattern such that each adjacent pair of leads 18 of increased length has a lead 18 of decreased length therebetween as is shown in FIG. 2. The two sets of leads 18 are further arranged along the respective sides 16 of the outer frame 14 so that each lead 18 of increased length of one set extends in opposed relation to a lead 18 of increased length of the remaining set. Similarly, each lead 18 of reduced length of one set extends in opposed relation to a respective lead 18 of decreased length of the remaining set. As is further seen in FIG. 2, though the leads 18 of each set extend inwardly into the open interior of the outer frame 14, they are maintained in spaced relation to each other. In this regard, the opposed pairs of leads 18 of increased length are separated by identically sized gaps, with the opposed pairs of leads of decreased length also each being separated by identically sized gaps which are larger than those separating the opposed pairs of leads 18 of increased length.


As is shown in FIGS. 1 and 2, each of the leads 18 defines a generally planar first (top) surface 20 and an opposed, generally planar second (bottom) surface 22. In addition to the first and second surfaces 20, 22, each of the leads 18 defines a third surface 24 which is disposed in opposed relation to the first surface 20, but is perpendicularly offset or recessed relative to the second surface 22. As a result, as is best seen in FIG. 1, the thickness between the first and second surface 20, 22 of each lead 18 substantially exceeds the thickness between the first and third surfaces 20, 24 thereof. The leads 18 are also formed such that the area of increased thickness of each lead 18 (which defines the second surface 22 thereof) is disposed in close proximity to the distal end of such lead 18, the distal end being that end which is disposed furthest from the corresponding side 16 of the outer frame 14.


It is contemplated that the leadframe 12 will be fabricated from a conductive metal material (e.g., copper) through a mechanical stamping and/or chemical etching process. In this regard, the formation of the third surfaces 24 of the leads 18 preferably occurs as a result of the completion of a chemical etching process. As will be recognized, prior to any such chemical etching process, portions of each lead 18 are masked as needed to prevent any reduction in the original thickness thereof, such original thickness being reflected in the distance separating the first and second surfaces 20, 22 of each lead 18 from each other. As is further seen in FIG. 2, it is contemplated that each lead 18 may further be formed such that the width of the second surface 22 exceeds that of the third surface 24 thereof. However, those of ordinary skill in the art will recognize that the second and third surfaces 22, 24 of each lead 18 need not necessarily be formed to be of differing widths.


In addition to the leadframe 12, the semiconductor package 10 comprises a semiconductor die 26. As seen in FIG. 1, the semiconductor die 26 is attached to portions of the first surfaces 20 of at least some of the leads 18 of each of the first and second sets thereof. The attachment of the semiconductor die 26 to the first surfaces 20 of the leads 18 is preferably facilitated through the use of a suitable adhesive. Upon the mounting of the semiconductor die 26 to the leads 18 in the above-described manner, conductive wires 28 are used to electrically connect pads or terminals disposed on the top surface of the semiconductor die 26 to the first surfaces 20 of respective ones of the leads 18. Though not shown, it is contemplated that at least a portion of the first surface 20 of each of the leads 18 may include a layer of conductive plating formed thereon to assist in the adhesion and conductive connection of the conductive wire 28 to the corresponding lead 18.


Subsequent to the electrical connection of the semiconductor die 26 to the leads 18 through the use of the conductive wires 28, a plastic encapsulant material is applied to portions of the leadframe 12, the semiconductor die 26, and the conductive wires 28. The hardening of the encapsulant material facilitates the formation of a package body 30 of the semiconductor package 10. The package body 30 defines a generally planar top surface 32, an opposed, generally planar bottom surface 34, and a peripheral side surface 36 which extends generally perpendicularly relative to the bottom surface 34. In the semiconductor package 10, the second surfaces 22 of the leads 18 are exposed in and substantially flush with the bottom surface 34 of the package body 30. These exposed second surfaces 22 of the leads 18 define the “lands” and hence the land pattern or footprint of the semiconductor package 10. It is contemplated that each land defined by the second surface 22 of a respective lead 18 may include a layer of solderable plating 38 (e.g., NiPd, Matte Sn) applied thereto. Such layers of solderable plating 38 will typically be applied to the second surfaces 32 of the leads 18 subsequent to the complete formation of the package body 30.


It will be recognized that the complete formation of the semiconductor package 10 involves the singulation or severing of the outer frame 14 of the leadframe 12 from the remainder thereof. Such singulation occurs subsequent to the formation of the package body 30, and may be completed via a sawing or punching process. The singulation or removal of the outer frame 14 from the remainder of the leadframe 12 effectively electrically isolates the individual leads 18 from each other. As a result of the completion of the singulation process, each lead 18 defines an outer end which is exposed in and substantially flush with the side surface 36 of the package body 30, the third surface 24 extending to such outer end. Advantageously, the partial etching of the leads 18 as facilitates the formation of the third surfaces 24 thereof allows the encapsulant material which is used to form the package body 30 to underflow the leads 18 in a manner covering the third surfaces 24 thereof, thereby effectively locking the leads 18 to the package body 30.


Due to the configuration of each of the leads 18 of the semiconductor package 10 as described above, the land footprint of the semiconductor package 10 is significantly reduced in comparison to the land footprint which would result if the second surfaces 22 of the leads 18 were all located at or in very close proximity to the peripheral side surface 36 of the package body 30 in accordance with conventional semiconductor package designs. Signals transmitted from the semiconductor die 26 to the leads 18 via the conductive wires 28 are routed inwardly to the second surfaces 22 of the leads 18, and hence the lands defined thereby. As indicated above, the fan-in configuration of the leadframe 12 and hence the semiconductor package 10 results in improvements in solder joint reliability due to the reduced land footprint, and further allows for easier motherboard routing due to the free space available under the semiconductor package 10 outside of the land pattern defined by the second surfaces 22 of the leads 18.


Referring now to FIG. 3, there is shown a fan-in leadframe 40 constructed in accordance with a second embodiment of the present invention. The leadframe 40 includes an outer frame 42 having a generally quadrangular (e.g., square, rectangular) configuration. The outer frame 14 defines two pairs of opposed sides, with one such pair being labeled with the reference numerals 44 in FIG. 3, and the remaining pair being labeled with the reference numerals 46.


The leadframe 40 includes a generally quadrangular die pad 48 which resides within the interior of the outer frame 46. The die pad 48 is integrally connected to the sides 46 of the outer frame 42 by a plurality of tie bars 50 extending therebetween. Integrally connected to and extending inwardly from each of the opposed sides 44 of the outer frame 42 are a plurality of elongate leads 52. The leads 52 are segregated into two sets, with the leads 52 of each such set being integrally connected to a respective one of the opposed sides 44. The leads 52 of each set are of equal length. Though not required, the leads 52 are preferably arranged to extend inwardly into the open interior of the outer frame 42 such that each lead 52 of one set extends in opposed relation to a respective one of the leads 52 of the remaining set.


In the leadframe 40, the die pad 48 defines a generally planar first (top) surface and an opposed, generally planar second (bottom) surface 54. The die pad 48 is not formed to be of uniform thickness. Rather, the die pad 48 defines a third surface 60 which circumvents the second surface 54, and is perpendicularly offset or recessed relative to the second surface 54. As a result, the thickness between the first surface and the second surface 54 of the die pad 48 substantially exceeds the thickness between the first surface and the third surface 60 thereof.


Similarly, each of the leads 52 defines a generally planar first (top) surface and an opposed, generally planar second (bottom) surface 56. In addition to the first surface and second surface 56, each of the leads 52 defines a third surface 58 which is disposed in opposed relation to the first surface thereof, but is perpendicularly offset or recessed relative to the second surface 56. As a result, the thickness between the first surface and second surface 56 of each lead 52 substantially exceeds the thickness between the first surface and the third surface 58 thereof. The leads 52 are also formed such that the area of increased thickness of each lead 52 (which defines the second surface 56 thereof) extends to the distal end of such lead 52, the distal end being that end which is disposed furthest from the corresponding side 44 of the outer frame 42.


It is contemplated that the leadframe 40 will be fabricated from a conductive metal material (e.g, copper) through a mechanical stamping and/or chemical etching process. In this regard, the formation of the third surfaces 58 of the leads 52 and third surface 60 of the die pad 48 preferably occur as a result of the completion of a chemical etching process. As will be recognized, prior to any such chemical etching process, portions of each lead 52 and the die pad 48 are masked as needed to prevent any reduction in the original thickness thereof, such original thicknesses being reflected in the distance separating the first surface and second surface 56 of each lead 52 from each other, and the distance separating the first surface and the second surface 54 of the die pad 48 from each other. In the leadframe 40, the tie bars 50 used to secure the die pad 48 to the outer frame 42 are also subjected to the chemical etching process in a manner effectively decreasing the thickness thereof. In the fully etched leadframe 40, the second surfaces 56 of the leads 52 extend in generally co-planar relation to the second surface 54 of the die pad 48.


In FIG. 3, a semiconductor die 62 is shown as being mounted to the first surface of the die pad 48 and to portions of the first surfaces of at least some of the leads 52 of each of the first and second sets thereof. The attachment of the semiconductor die 62 to the die pad 48 and to the leads 52 is preferably facilitated through the use of a suitable adhesive. Upon the mounting of the semiconductor die 62 to the die pad 48 and leads 52 in the above-described manner, conductive wires are used to electrically connect pads or terminals disposed on the semiconductor die 62 to the first surfaces of respective ones of the leads 52. At least a portion of the first surface of each of the leads 52 may include a layer of conductive plating formed thereon to assist in the adhesion and conductive connection of these conductive wires to the corresponding leads 52.


Though not shown in FIG. 3, subsequent to the electrical connection of the semiconductor die 62 to the leads 52 through the use of the conductive wires, a plastic encapsulant material is applied to portions of the leadframe 40, the semiconductor die 62 and such conductive wires. As described above in relation to the semiconductor package 10, the hardening of such encapsulant material facilitates the formation of a package body. In the fully formed package body, the second surfaces 56 of the leads 52 will be exposed in and substantially flush with a bottom surface defined by such package body. Also exposed in and substantially flush with the bottom surface of such package body will be the bottom surface 54 of the die pad 48. The exposed second surfaces 56 of the leads 52 will define the lands and hence the land pattern or footprint of the semiconductor package including the leadframe 40.


It will be recognized that the complete formation of a semiconductor package including the leadframe 40 will involve the singulation or severing of the outer frame 42 of the leadframe 40 from the remainder thereof. The singulation or removal of the outer frame 42 from the remainder of the leadframe 40 effectively electrically isolates the leads 52 from each other. In the fully formed semiconductor package, the outer ends of the leads 52 formed as a result of the singulation or removal of the outer frame 42 will be exposed in and substantially flush with the side surface of the package body, the third surface 53 of each lead 52 extending to the outer end thereof. Similarly, the singulation process will result in the tie bars 50 of the leadframe 40 defining outer ends which are exposed in and substantially flush with the side surface of the package body. Advantageously, the partial etching of the leads 52 as facilitates the formation of the third surfaces 58 thereof allows the encapsulant material which is used to form the package body to underflow the leads 52 in a manner covering the third surfaces 58 thereof, thereby effectively locking the leads 52 to the package body. Similarly, the encapsulant material is able to underflow the peripheral portion of the die pad 48 in a manner covering the third surface 60, thereby further locking the die pad 48 to the package body. The configuration of the leads 52 in a semiconductor package constructed through the use of the leadframe 40 provides the same advantages described above in relation to the leads 18 of the semiconductor package 10.


It is contemplated that certain variations may be made to the leadframes 12, 40 without departing from the spirit and scope of the present invention. For example, the leads 18 of the leadframe 12 may alternatively be provided in equal lengths, with the leads 52 of the leadframe 40 alternatively being provided in differing lengths. Additionally, in the leadframe 12, it is contemplated that leads 18 of identical or differing lengths may be integrally connected to and extended inwardly from all four sides of the outer frame 14, rather than only the opposed sides 16 thereof. Similarly, in the leadframe 40, the leads 52 may be integrally connected to and extend inwardly from all of the sides 44, 46 of the outer frame 42, rather than from only the sides 44 thereof. In such alternative configuration, the die pad 48 may be supported within the interior of the outer frame 42 by tie bars which extend from respective corners of the die pad 48 to corresponding corners of the outer frame 42.


Referring now to FIG. 4, there is shown a fan-in semiconductor package 70 constructed in accordance with a third embodiment of the present invention. The semiconductor package 70 comprises a fan-in leadframe 72, a partial bottom plan view of which is shown in FIG. 5. The leadframe 72 includes an outer frame 74 having a generally quadrangular (e.g., square, rectangular) configuration. In this regard, the outer frame 74 defines two pairs of opposed sides, with one such pair being labeled with the reference numerals 76 in FIG. 5. Due to the configuration of the outer frame 74, the pair of opposed sides 76 thereof extend in spaced, generally parallel relation to each other.


Integrally connected to and extending inwardly from each of the opposed side 76 of the outer frame 74 are a plurality of elongate leads 78. The leads 78 are segregated into two sets, with the leads 78 of each such set being integrally connected to a respective one of the opposed sides 76. The leads 78 of each set are preferably of substantially equal length. The two sets of leads 78 are arranged along respective sides 76 of the outer frame 74 so that each lead 78 of one set extends in opposed relation to a lead 78 of the remaining set. The opposed pairs of the leads 78 are separated from each other by identically sized gaps.


As shown in FIGS. 4 and 5, each of the leads 78 defines a generally planar first (top) surface 80 and an opposed, generally planar second (bottom) surface 82. In addition to the first and second surfaces 80, 82, each of the leads 78 defines a third surface 84 which is disposed in opposed relation to the first surface 80, but is perpendicularly offset or recessed relative to the second surface 82. As a result, as is best seen in FIG. 4, the thickness between the first and second surfaces 80, 82 of each lead 78 substantially exceeds the thickness between the first and third surfaces 80, 84 thereof. The leads 78 are also formed such that the area of increased thickness of each lead 78 (which defines the second surface 82 thereof) is disposed in close proximity to the distal end of such lead 78, the distal end being that end which is disposed furthest from the corresponding side 76 of the outer frame 74.


Like the leadframe 12 described above, it is contemplated that the leadframe 72 will be fabricated from a conductive metal material (e.g., copper) through a mechanical stamping and/or chemical etching process. The formation of the third surfaces 84 of the leads 78 preferably occurs as a result of the completion of a chemical etching process. Prior to any such chemical etching process, portions of each lead 78 are masked as needed to prevent any reduction in the original thickness thereof, such original thickness being reflected in the distance separating the first and second surfaces 80, 82 of each lead 78 from each other. As further seen in FIG. 5, it is contemplated that each lead 78 may further be formed such that the width of the second surface 82 exceeds that of the third surface 84 thereof. However, those of ordinary skill in the art will recognize that the second and third surfaces 82, 84 of each lead 78 need not necessarily be formed to be of differing widths.


In addition to the leadframe 72, the semiconductor package 70 comprises a semiconductor die 86. As seen in FIG. 4, the semiconductor die 86 is attached to portions of the first surfaces 80 of at least some of the leads 78 of each of the first and second sets thereof. The attachment of the semiconductor die 86 to the first surfaces 80 of the leads 78 is preferably facilitated through the use of a suitable adhesive. Upon the mounting of the semiconductor die 86 to the leads 78 in the above-described manner, conductive wires 88 are used to electrically connect pads or terminals disposed on the top surface of the semiconductor die 86 to the first surfaces 80 of respective ones of the leads 78. Though not shown, it is contemplated that at least a portion of the first surface 80 of each of the leads 78 may include a layer of conductive plating formed thereon to assist in the adhesion and conductive connection of each conductive wire 88 to the corresponding lead 78.


Subsequent to the electrical connection of the semiconductor die 86 to the leads 78 through the use of the conductive wires 88, a plastic encapsulant material is applied to portions of the leadframe 72, the semiconductor die 86, and the conductive wires 88. The hardening of the encapsulant material facilitates the formation of a package body 90 of the semiconductor package 70. The package body 90 defines a generally planar top surface 92, an opposed, generally planar bottom surface 94, and a peripheral side surface 96 which extends generally perpendicularly relative to the bottom surface 94. In the semiconductor package 70, the second surfaces 82 of the leads 78 are exposed in and substantially flush with the bottom surface 94 of the package body 90. These exposed second surfaces 82 of the leads 78 define the “lands” and hence the land pattern or footprint of the semiconductor package 70. It is contemplated that each land defined by the second surface 82 of a respective lead 78 may include a layer of solder plating 98 applied thereto. Such layers of solder plating 98 will typically be applied to the second surfaces 82 of the leads 78 subsequent to the complete formation of the package body 90.


The complete formation of the semiconductor package 70 involves the singulation or severing of the outer frame 74 of the leadframe 72 from the remainder thereof. Such singulation occurs subsequent to the formation of the package body 90, and may be completed via a sawing or punching process. The singulation or removal of the outer frame 74 from the remainder of the leadframe 72 effectively electrically isolates the individual leads 78 from each other. As a result of the completion of the singulation process, each lead 78 defines an outer end which is exposed in and substantially flush with the side surface 96 of the package body 90, the third surface 84 extending to such outer end. The partial etching of the leads 78 as facilitates the formation of the third surfaces 84 thereof allows the encapsulant material which is used to form the package body 90 to underflow the leads 78 in a manner covering the third surfaces 84, thereby effectively locking the leads 78 to the package body 90.


Due to the configuration of each of the leads 78 of the semiconductor package 70, the land footprint of the semiconductor package 70 is significantly reduced in comparison to the land footprint which would result if the second surfaces 82 of the leads 78 were all located at or in very close proximity to the peripheral side surface 96 of the package body 90 in accordance with conventional semiconductor package designs. Signals transmitted from the semiconductor die 86 to the leads 78 via the conductive wires 88 are routed inwardly to the second surfaces 82 of the leads 78, and hence the lands defined thereby. The fan-in configuration of the leadframe 72 and hence the semiconductor package 70 results in improvements in solder joint reliability due to the reduced land footprint, and further allows for easier motherboard routing due to the free space available under the semiconductor package 70 outside of the land pattern defined by the second surfaces 82 of the leads 78.


This disclosure provides exemplary embodiments of the present invention. The scope of the present invention is not limited by these exemplary embodiments. Numerous variations, whether explicitly provided for by the specification or implied by the specification, such as variations in structure, dimension, type of material and manufacturing process may be implemented by one of skill in the art in view of this disclosure.

Claims
  • 1. A method of fabricating a semiconductor package, comprising the steps of: a) providing a leadframe having an outer frame and a plurality of elongate leads attached to the outer frame, each of the leads having: an inner end;a first surface;a second surface disposed in opposed relation to the first surface and positioned in close proximity to the inner end; anda third surface disposed in opposed relation to the first surface and recessed relative to the second surface, the third surface extending to the outer frame;b) attaching a semiconductor die attached to portions of the first surfaces of at least some of the leads;c) electrically connecting the semiconductor die to at least some of the leads; andd) covering the semiconductor die and the leads with a package body such that the second surfaces of the leads are exposed in a bottom surface of the package body and the outer ends of the leads are exposed in a side surface of the package body.
  • 2. The method of claim 1 wherein step (a) comprises providing a leadframe wherein the leads are segregated into two sets which are integrally connected to and extend along respective ones of an opposed pair of sides of the outer frame.
  • 3. The method of claim 2 wherein step (a) comprises providing a leadframe wherein the leads of each set are provided in at least two differing lengths.
  • 4. A method of fabricating a semiconductor package, comprising the steps of: a) providing a leadframe having an outer frame and a plurality of elongate leads which are attached to the outer frame, each of the leads having: an inner end;a first surface;a second surface disposed in opposed relation to the first surface and positioned in close proximity to the inner end; anda third surface disposed in opposed relation to the first surface and recessed relative to the second surface, the third surface extending to the outer frame;the leads being segregated into at least two sets, with the leads of each set being provided in only first and second differing lengths;b) attaching a semiconductor die to portions of the first surfaces of each of the leads;c) electrically connecting the semiconductor die to at least some of the leads; andd) covering the semiconductor die and the leads with a package body such that the second surfaces of the leads are exposed in a bottom surface of the package body.
  • 5. The method of claim 4 wherein step (c) comprises electrically connecting the semiconductor die to the first surfaces of at least some of the leads via conductive wires, and step (d) comprises covering the conductive wires with the package body.
  • 6. The method of claim 4 wherein step (a) comprises providing a leadframe wherein the leads are segregated into only two sets which are oriented so as to extend along respective ones of an opposed pair of sides of the semiconductor die attached to the leads in step (b).
  • 7. The method of claim 4 wherein step (a) comprises providing a leadframe wherein the leads of each set are arranged in a staggered pattern such that each lead of the first length is disposed between an adjacent pair of leads of the second length.
  • 8. The method of claim 7 wherein step (a) comprises providing a leadframe wherein the second lead surfaces of the leads of the first length are offset relative to the second lead surfaces of the leads of the first length.
  • 9. The method of claim 8 wherein step (a) comprises providing a leadframe wherein the leads are segregated into only two sets which are oriented so as to extend along respective ones of an opposed pair of sides of the semiconductor die attached to the leads in step (b).
  • 10. The method of claim 4 wherein step (b) comprises attaching the semiconductor die to the leads such that the semiconductor die overlies the entirety of the second surface of each of the leads.
  • 11. The method of claim 4 wherein step (a) comprises providing a leadframe further comprising a die pad defining opposed first and second surfaces, and step (b) comprises attaching the semiconductor die to at least a portion of the first surface of the die pad.
  • 12. The method of claim 11 wherein step (a) comprises providing a leadframe wherein the second surface of the die pad and the second surfaces of the leads extend in generally co-planar relation to each other.
  • 13. The method of claim 11 wherein step (a) comprises providing a leadframe wherein the die pad further comprises a third surface which circumvents the second surface thereof and is recessed relative thereto, and step (d) comprises covering the third surface of the die pad with the package body.
  • 14. The method of claim 4 wherein step (a) comprises providing a leadframe wherein the second surface of each of the leads extends to the inner end thereof.
  • 15. A method of fabricating a semiconductor package, comprising the steps of: a) providing a leadframe having an outer frame and a plurality of elongate leads which are attached to the outer frame, each of the leads having: an inner end;a first surface;a second surface disposed in opposed relation to the first surface and positioned in close proximity to the inner end; anda third surface disposed in opposed relation to the first surface and recessed relative to the second surface, the third surface extending to the outer frame;the leads being segregated into at least two sets, with the second surfaces of the leads of each set being arranged in a staggered pattern;b) attaching a semiconductor die to portions of the first surfaces of at least some of the leads such that the semiconductor die overlies the entirety of the second surface of each of the leadsc) electrically connecting the semiconductor die to at least some of the leads; and(d) covering the semiconductor die and the leads with a package body such that the second surfaces of the leads are exposed in and substantially flush with a bottom surface of the package body.
  • 16. The method of claim 15 wherein step (c) comprises electrically connecting the semiconductor die to portions of the first surfaces of at least some of the leads which are disposed in opposed relation to the third surfaces thereof via conductive wires, and step (d) comprises covering the conductive wires with the package body.
  • 17. The method of claim 15 wherein step (a) comprises providing a leadframe wherein the leads of each set are provided in only first and second differing lengths and arranged such that each lead of the first length is disposed between an adjacent pair of leads of the second length.
  • 18. The method of claim 15 wherein step (a) comprises providing a leadframe wherein the leads are segregated into only two sets which are oriented so as to extend along respective ones of an opposed pair of sides of the semiconductor die attached to at least some of the leads in step (b).
  • 19. The method of claim 18 wherein step (a) comprises providing a leadframe wherein the leads of each set are provided in only first and second differing lengths and arranged such that each lead of the first length is disposed between an adjacent pair of leads of the second length.
  • 20. The method of claim 15 further comprising the step of: (e) severing the outer frame from the leads such that each of the leads defines an outer end which is disposed in opposed relation to the inner end thereof and exposed in a side surface of the package body.
CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of U.S. patent application Ser. No. 10/971,408 entitled FAN-IN LEADFRAME PACKAGE filed Oct. 22, 2004 now U.S. Pat. No. 7,217,991.

US Referenced Citations (264)
Number Name Date Kind
3435815 Forcier Apr 1969 A
3734660 Davies et al. May 1973 A
3838984 Crane et al. Oct 1974 A
4054238 Lloyd et al. Oct 1977 A
4189342 Kock Feb 1980 A
4258381 Inaba Mar 1981 A
4289922 Devlin Sep 1981 A
4301464 Otsuki et al. Nov 1981 A
4332537 Slepcevic Jun 1982 A
4417266 Grabbe Nov 1983 A
4451224 Harding May 1984 A
4530152 Roche et al. Jul 1985 A
4541003 Otsuka et al. Sep 1985 A
4646710 Schmid et al. Mar 1987 A
4707724 Suzuki et al. Nov 1987 A
4727633 Herrick Mar 1988 A
4737839 Burt Apr 1988 A
4756080 Thorp, Jr. et al. Jul 1988 A
4812896 Rothgery et al. Mar 1989 A
4862245 Pashby et al. Aug 1989 A
4862246 Masuda et al. Aug 1989 A
4907067 Derryberry Mar 1990 A
4920074 Shimizu et al. Apr 1990 A
4935803 Kalfus et al. Jun 1990 A
4942454 Mori et al. Jul 1990 A
4987475 Sclesinger et al. Jan 1991 A
5018003 Yasunaga May 1991 A
5029386 Chao et al. Jul 1991 A
5041902 McShane Aug 1991 A
5057900 Yamazaki Oct 1991 A
5059379 Tsutsumi et al. Oct 1991 A
5065223 Matsuki et al. Nov 1991 A
5070039 Johnson et al. Dec 1991 A
5087961 Long et al. Feb 1992 A
5091341 Asada et al. Feb 1992 A
5096852 Hobson et al. Mar 1992 A
5118298 Murphy Jun 1992 A
5122860 Kichuchi et al. Jun 1992 A
5134773 LeMaire et al. Aug 1992 A
5151039 Murphy Sep 1992 A
5157475 Yamaguchi Oct 1992 A
5157480 McShane et al. Oct 1992 A
5168368 Gow, 3rd et al. Dec 1992 A
5172213 Zimmerman Dec 1992 A
5172214 Casto Dec 1992 A
5175060 Enomoto et al. Dec 1992 A
5200362 Lin et al. Apr 1993 A
5200809 Kwon Apr 1993 A
5214845 King et al. Jun 1993 A
5216278 Lin et al. Jun 1993 A
5218231 Kudo Jun 1993 A
5221642 Burns Jun 1993 A
5250841 Sloan et al. Oct 1993 A
5252853 Michii Oct 1993 A
5258094 Furui et al. Nov 1993 A
5266834 Nishi et al. Nov 1993 A
5273938 Lin et al. Dec 1993 A
5277972 Sakumoto et al. Jan 1994 A
5278446 Nagaraj et al. Jan 1994 A
5279029 Burns Jan 1994 A
5281849 Singh Deo et al. Jan 1994 A
5294897 Notani et al. Mar 1994 A
5327008 Djennas et al. Jul 1994 A
5332864 Liang et al. Jul 1994 A
5335771 Murphy Aug 1994 A
5336931 Juskey et al. Aug 1994 A
5343076 Katayama et al. Aug 1994 A
5358905 Chiu Oct 1994 A
5365106 Watanabe Nov 1994 A
5381042 Lerner et al. Jan 1995 A
5391439 Tomita et al. Feb 1995 A
5406124 Morita et al. Apr 1995 A
5410180 Fujii et al. Apr 1995 A
5414299 Wang et al. May 1995 A
5417905 LeMaire et al. May 1995 A
5424576 Djennas et al. Jun 1995 A
5428248 Cha Jun 1995 A
5435057 Bindra et al. Jul 1995 A
5444301 Song et al. Aug 1995 A
5452511 Chang Sep 1995 A
5454905 Fogelson Oct 1995 A
5474958 Djennas et al. Dec 1995 A
5484274 Neu Jan 1996 A
5493151 Asada et al. Feb 1996 A
5508556 Lin Apr 1996 A
5517056 Bigler et al. May 1996 A
5521429 Aono et al. May 1996 A
5528076 Pavio Jun 1996 A
5534467 Rostoker Jul 1996 A
5539251 Iverson et al. Jul 1996 A
5543657 Diffenderfer et al. Aug 1996 A
5544412 Romero et al. Aug 1996 A
5545923 Barber Aug 1996 A
5581122 Chao et al. Dec 1996 A
5592019 Ueda et al. Jan 1997 A
5592025 Clark et al. Jan 1997 A
5594274 Suetaki Jan 1997 A
5595934 Kim Jan 1997 A
5604376 Hamburgen et al. Feb 1997 A
5608265 Kitano et al. Mar 1997 A
5608267 Mahulikar et al. Mar 1997 A
5625222 Yoneda et al. Apr 1997 A
5633528 Abbott et al. May 1997 A
5639990 Nishihara et al. Jun 1997 A
5640047 Nakashima Jun 1997 A
5641997 Ohta et al. Jun 1997 A
5643433 Fukase et al. Jul 1997 A
5644169 Chun Jul 1997 A
5646831 Manteghi Jul 1997 A
5650663 Parthasarathi Jul 1997 A
5661088 Tessier et al. Aug 1997 A
5665996 Williams et al. Sep 1997 A
5673479 Hawthorne Oct 1997 A
5683806 Sakumoto et al. Nov 1997 A
5689135 Ball Nov 1997 A
5696666 Miles et al. Dec 1997 A
5701034 Marrs Dec 1997 A
5703407 Hori Dec 1997 A
5710064 Song et al. Jan 1998 A
5723899 Shin Mar 1998 A
5724233 Honda et al. Mar 1998 A
5726493 Yamashita Mar 1998 A
5736432 Mackessy Apr 1998 A
5745984 Cole, Jr. et al. May 1998 A
5753532 Sim May 1998 A
5753977 Kusaka et al. May 1998 A
5766972 Takahashi et al. Jun 1998 A
5770888 Song et al. Jun 1998 A
5776798 Quan et al. Jul 1998 A
5783861 Son Jul 1998 A
5801440 Chu et al. Sep 1998 A
5814877 Diffenderfer et al. Sep 1998 A
5814881 Alagaratnam et al. Sep 1998 A
5814883 Sawai et al. Sep 1998 A
5814884 Davis et al. Sep 1998 A
5817540 Wark Oct 1998 A
5818105 Kouda Oct 1998 A
5821615 Lee Oct 1998 A
5834830 Cho Nov 1998 A
5835988 Ishii Nov 1998 A
5844306 Fujita et al. Dec 1998 A
5856911 Riley Jan 1999 A
5859471 Kuraishi et al. Jan 1999 A
5866939 Shin et al. Feb 1999 A
5871782 Choi Feb 1999 A
5874784 Aoki et al. Feb 1999 A
5877043 Alcoe et al. Mar 1999 A
5886397 Ewer Mar 1999 A
5973935 Schoenfeld et al. Oct 1999 A
6143981 Glenn Nov 2000 A
6169329 Farnworth et al. Jan 2001 B1
6177718 Kozono Jan 2001 B1
6181002 Juso et al. Jan 2001 B1
6184465 Corisis Feb 2001 B1
6184573 Pu Feb 2001 B1
6194777 Abbott et al. Feb 2001 B1
6197615 Song et al. Mar 2001 B1
6198171 Huang et al. Mar 2001 B1
6201186 Daniels et al. Mar 2001 B1
6201292 Yagi et al. Mar 2001 B1
6204554 Ewer et al. Mar 2001 B1
6208020 Minamio et al. Mar 2001 B1
6208021 Ohuchi et al. Mar 2001 B1
6208023 Nakayama et al. Mar 2001 B1
6211462 Carter, Jr. et al. Apr 2001 B1
6218731 Huang et al. Apr 2001 B1
6222258 Asano et al. Apr 2001 B1
6222259 Park et al. Apr 2001 B1
6225146 Yamaguchi et al. May 2001 B1
6229200 McClellan et al. May 2001 B1
6229205 Jeong et al. May 2001 B1
6239367 Hsuan et al. May 2001 B1
6239384 Smith et al. May 2001 B1
6242281 McClellan et al. Jun 2001 B1
6256200 Lam et al. Jul 2001 B1
6258629 Niones et al. Jul 2001 B1
6281566 Magni Aug 2001 B1
6282095 Houghton et al. Aug 2001 B1
6285075 Combs et al. Sep 2001 B1
6291271 Lee et al. Sep 2001 B1
6291273 Miyaki et al. Sep 2001 B1
6294100 Fan et al. Sep 2001 B1
6294830 Fjelstad Sep 2001 B1
6295977 Ripper et al. Oct 2001 B1
6297548 Moden et al. Oct 2001 B1
6303984 Corisis Oct 2001 B1
6303997 Lee Oct 2001 B1
6307272 Takahashi et al. Oct 2001 B1
6309909 Ohgiyama Oct 2001 B1
6316822 Venkateshwaran et al. Nov 2001 B1
6316838 Ozawa et al. Nov 2001 B1
6323550 Martin et al. Nov 2001 B1
6326243 Suzuya et al. Dec 2001 B1
6326244 Brooks et al. Dec 2001 B1
6326678 Karnezos et al. Dec 2001 B1
6335564 Pour Jan 2002 B1
6337510 Chun-Jen et al. Jan 2002 B1
6339255 Shin Jan 2002 B1
6348726 Bayan et al. Feb 2002 B1
6355502 Kang et al. Mar 2002 B1
6362525 Rahim Mar 2002 B1
6369447 Mori Apr 2002 B2
6369454 Chung Apr 2002 B1
6373127 Baudouin et al. Apr 2002 B1
6377464 Hashemi et al. Apr 2002 B1
6380048 Boon et al. Apr 2002 B1
6384472 Huang May 2002 B1
6388336 Venkateshwaran et al. May 2002 B1
6395578 Shin et al. May 2002 B1
6400004 Fan et al. Jun 2002 B1
6410979 Abe Jun 2002 B2
6414385 Huang et al. Jul 2002 B1
6420779 Sharma et al. Jul 2002 B1
6429508 Gang Aug 2002 B1
6437429 Su et al. Aug 2002 B1
6444499 Swiss et al. Sep 2002 B1
6448633 Yee et al. Sep 2002 B1
6452279 Shimoda Sep 2002 B2
6459148 Chun-Jen et al. Oct 2002 B1
6464121 Reijinders Oct 2002 B2
6476469 Hung et al. Nov 2002 B2
6476474 Hung Nov 2002 B1
6482680 Khor et al. Nov 2002 B1
6498099 McClellan et al. Dec 2002 B1
6498392 Azuma Dec 2002 B2
6507096 Gang Jan 2003 B2
6507120 Lo et al. Jan 2003 B2
6534849 Gang Mar 2003 B1
6545332 Huang Apr 2003 B2
6545345 Glenn et al. Apr 2003 B1
6559525 Huang May 2003 B2
6566168 Gang May 2003 B2
6580161 Kobayakawa Jun 2003 B2
6583503 Akram et al. Jun 2003 B2
6603196 Lee et al. Aug 2003 B2
6624005 DiCaprio et al. Sep 2003 B1
6667546 Huang et al. Dec 2003 B2
6677663 Ku et al. Jan 2004 B1
6700189 Shibata Mar 2004 B2
6713322 Lee Mar 2004 B2
6713375 Shenoy Mar 2004 B2
6757178 Okabe et al. Jun 2004 B2
6800936 Kosemura et al. Oct 2004 B2
6867492 Auburger et al. Mar 2005 B2
7005327 Kung et al. Feb 2006 B2
20010008305 McClellan et al. Jul 2001 A1
20010014453 Kwan et al. Aug 2001 A1
20020011654 Kimura Jan 2002 A1
20020024122 Jung et al. Feb 2002 A1
20020027297 Ikenaga et al. Mar 2002 A1
20020140061 Lee Oct 2002 A1
20020140068 Lee et al. Oct 2002 A1
20020140081 Chou et al. Oct 2002 A1
20020163015 Lee et al. Nov 2002 A1
20030030131 Lee et al. Feb 2003 A1
20030073265 Hu et al. Apr 2003 A1
20030198032 Collander et al. Oct 2003 A1
20040056277 Karnezos Mar 2004 A1
20040061212 Karnezos Apr 2004 A1
20040061213 Karnezos Apr 2004 A1
20040063242 Karnezos Apr 2004 A1
20040063246 Karnezos Apr 2004 A1
20040065963 Karnezos Apr 2004 A1
20040164387 Ikenaga et al. Aug 2004 A1
Foreign Referenced Citations (82)
Number Date Country
19734794 Aug 1997 DE
0393997 Oct 1990 EP
0459493 Dec 1991 EP
0720225 Mar 1996 EP
0720234 Mar 1996 EP
0794572 Oct 1997 EP
0844665 May 1998 EP
0989608 Mar 2000 EP
1032037 Aug 2000 EP
55163868 Dec 1980 JP
5745959 Mar 1982 JP
58160096 Aug 1983 JP
59208756 Nov 1984 JP
59227143 Dec 1984 JP
60010756 Jan 1985 JP
60116239 Aug 1985 JP
60195957 Oct 1985 JP
60231349 Nov 1985 JP
6139555 Feb 1986 JP
61248541 Nov 1986 JP
629639 Jan 1987 JP
6333854 Feb 1988 JP
63067762 Mar 1988 JP
63188964 Aug 1988 JP
63205935 Aug 1988 JP
63233555 Sep 1988 JP
63249345 Oct 1988 JP
63289951 Nov 1988 JP
63316470 Dec 1988 JP
64054749 Mar 1989 JP
1106456 Apr 1989 JP
1175250 Jul 1989 JP
1205544 Aug 1989 JP
1251747 Oct 1989 JP
2129948 May 1990 JP
369248 Jul 1991 JP
3177060 Aug 1991 JP
4098864 Mar 1992 JP
5129473 May 1993 JP
5166992 Jul 1993 JP
5283460 Oct 1993 JP
6061401 Mar 1994 JP
692076 Apr 1994 JP
6140563 May 1994 JP
6260532 Sep 1994 JP
7297344 Nov 1995 JP
7312405 Nov 1995 JP
8064364 Mar 1996 JP
8083877 Mar 1996 JP
8125066 May 1996 JP
964284 Jun 1996 JP
8222682 Aug 1996 JP
8306853 Nov 1996 JP
98205 Jan 1997 JP
98206 Jan 1997 JP
98207 Jan 1997 JP
992775 Apr 1997 JP
9260568 Oct 1997 JP
9293822 Nov 1997 JP
10022447 Jan 1998 JP
10199934 Jul 1998 JP
10256240 Sep 1998 JP
11307675 Nov 1999 JP
2000150765 May 2000 JP
20010600648 Mar 2001 JP
2002519848 Jul 2002 JP
200203497 Aug 2002 JP
941979 Jan 1994 KR
19940010938 May 1994 KR
19950018924 Jun 1995 KR
19950041844 Nov 1995 KR
19950044554 Nov 1995 KR
19950052621 Dec 1995 KR
1996074111 Dec 1996 KR
9772358 Nov 1997 KR
100220154 Jun 1999 KR
20000072714 Dec 2000 KR
20000086238 Dec 2000 KR
20020049944 Jun 2002 KR
EP0936671 Aug 1999 WO
9956316 Nov 1999 WO
9967821 Dec 1999 WO
Divisions (1)
Number Date Country
Parent 10971408 Oct 2004 US
Child 11685072 US