Method for making internally overlapped conditioners

Abstract
The application discloses novel internal structures of energy conditioners, assemblies of external structures of energy conditioners and mounting structure, and novel circuits including energy conditioners having A, B, and G master electrodes.
Description
FIELD OF THE INVENTION

This invention relates to energy conditioning.


BACKGROUND OF THE INVENTION

Electrical circuits using low frequency electrical power generate noise that is coupled through the power distribution system. That noise is generally detrimental. In the past, capacitors have been used to condition the electrical power propagating to and from devices. One type of device in which capacitors have been used to condition electrical power is an active circuitry. Capacitors have been used to in active circuitry to decouple noise from the power lines. Typically, in applications involving Large or Very Large


Scale Integration (LSI or VLSI) Integrated Circuits (ICs), multiple rows of capacitors are arrayed on a PC board as close as feasible to the location of the IC in the PC board, given design constraints. This arrangement provides sufficient decoupling of the power and ground from the IC's active circuitry. The terms “bypass” and “decoupling” are used interchangeable herein.


SUMMARY OF THE INVENTION

This application discloses novel energy conditioner structures and novel combinations of the connections of the energy conditioners on other structures, such as PC board structures, and novel circuit arrangements of the energy conditioners with structures, such as PC boards, described herein, generally provide improved decoupling, per conditioner, and require less conditioners and related structure, such as vias, to provide sufficient decoupling. Similarly to PC boards, the structures to which the novel conditioners and the novel combination of the connections of the energy conditioners may be applied include first level interconnects and semiconductor chips, including for example ASIC, FPGA, CPU, memory, transceiver, computer on a chip, and the like.


More particularly, this application discloses and claims energy conditioner internal structures and external structures, connection structure, and circuits including energy conditioners having A, B, and G master electrodes.


In one aspect, the claims define an internal structure of an energy conditioner: wherein said internal structure has a left side surface, a right side surface, an upper side surface, a lower side surface, a top side surface, and a bottom side surface;


wherein said internal structure comprises a dielectric material and a conductive material;


wherein surfaces of said dielectric material and surfaces of said conductive material define said left side surface, said right side surface, said upper side surface, said lower side surface, said top side surface, and said bottom side surface;


wherein said conductive material comprises a first A conductive layer and a first B conductive layer in a first plane;


wherein said first A conductive layer and said first B conductive layer are electrically isolated from one another in said structure;


wherein said first A conductive layer comprises at least one first A conductive layer first tab and a first A conductive layer main body portion;


wherein said first B conductive comprises at least one first B conductive layer first tab and a first B conductive layer main body portion;


wherein said first A conductive layer main body portion does not extend to any one of said left side, right side, upper side, and lower side;


wherein said first B conductive layer main body portion does not extend to any one of said left side, right side, upper side, and lower side;


wherein said at least one first A conductive layer first tab extends to said left side surface, said upper side surface, and said lower side surface; and


wherein said at least one first B conductive layer first tab extends to at least portions of said right side surface, said upper side surface, and said lower side surface.


In aspects dependent upon the foregoing, the claims define wherein said first A conductive layer main body portion extends to a region closer to said right side surface than said left side surface and closer to said upper side surface than said lower side surface, and wherein said first B conductive layer main body portion extends to a region closer to said left side surface than said right side surface and closer to said lower side surface than said upper side surface; wherein said at least one first A conductive layer first tab comprises a single tab extending across all of said left side, extending to a left side end of said upper side surface, and extending to a left side end of said lower side surface; wherein said at least one first A conductive layer first tab comprises at least two tabs; wherein said conductive material further comprises a first G conductive layer; wherein conductive material further comprises a first G conductive layer between said first A conductive layer and said first B conductive layer; wherein conductive material further comprises a first G conductive layer in a second plane parallel to said first plane, and said G conductive layer has a G conductive layer main body portion having a region opposing at least a portion of said first A conductive layer A main body portion and a portion of said first B conductive layer main body portion;


wherein said conductive material comprises a second A conductive layer in a second plane and a second B conductive layer in said second plane;


wherein said second A conductive layer and said second B conductive layer are electrically isolated from one another in said structure;


wherein said second A conductive layer comprises at least one second A conductive layer first tab and a second A conductive layer main body portion;


wherein said second B conductive layer comprises at least one second B conductive layer first tab and a second B conductive layer main body portion;


wherein said second A conductive layer main body portion does not extend to any one of said left side surface, said right side surface, said upper side surface, and said lower side surface;


wherein said second B conductive layer main body portion does not extend to any one of said left side surface, said right side surface, said upper side surface, and said lower side surface;


wherein said at least one second A conductive layer first tab extends to at least portions of said left side surface, said upper side surface, and said lower side surface;


wherein said at least one second B conductive layer first tab extends to at least portions of said right side surface, said upper side surface, and said lower side surface;


wherein said second A conductive layer main body portion extends to a region closer to said right side surface than said left side surface and closer to said lower side surface than said upper side surface, and wherein said second B conductive layer main body portion extends to a region closer to said left side surface than said right side surface and closer to said upper side surface than said lower side surface;


whereby said first A conductive layer main body portion and said second B conductive layer main body portion have a first region of substantial overlap and said second A conductive layer main body portion and said first B conductive layer main body portion have a second region of substantial overlap; wherein said conductive material further comprises a first G conductive layer, and wherein said first G conductive layer comprises a main body portion having a substantial overlap with both said first region and said second region; wherein said first G conductive layer is in a third plane between said first plane and said second plane; wherein said conductive material further comprises:


a first G conductive layer in said first plane between said first A conductive layer and said first B conductive layer and electrically isolated in said structure from said first A conductive layer and said first B conductive layer; and


a second G conductive layer in said second plane between said second A conductive layer and said second B conductive layer and electrically isolated in said structure from said second A conductive layer and said second B conductive layer; wherein said conductive material further comprises a second G conductive layer, and wherein said second G conductive layer comprises a main body portion having a substantial overlap with both said first region and said second region; and wherein said first G conductive layer is in a third plane between said first plane and said second plane.


In a second aspect the claims define an assembly comprising said internal structure and an external structure of an energy conditioner, wherein said external structure comprises: a first conductive integration region that extends along at least one of said left side surface, said upper side surface, and said lower side surface and contacts there at, at least one of said at least one first A conductive layer first tab; and a second conductive integration region that extends along at least one of said right side surface, said upper side surface, and said lower side surface and contacts thereat at least one of said at least one first B conductive layer first tab.


Dependent upon the second aspect, the claims define wherein said internal structure further comprises a G conductive layer including a G conductive layer main body portion, a G conductive layer first tab, and a G conductive layer second tab, and wherein said external structure further comprises a third conductive integration region that extends along at least one side surface of said internal structure and contacts thereat said G conductive layer first tab; wherein said external structure further comprises a fourth conductive integration region that extends along at least one side surface of said internal structure opposite the one side surface of said internal structure along which said third conductive integration region extends where at said fourth conductive integration region contacts said G conductive layer second tab; wherein at least one of said first conductive integration region, said second conductive integration region, said third conductive integration region, and said fourth conductive integration region are formed from solder; wherein at least one of said first conductive integration region, said second conductive integration region, said third conductive integration region, and said fourth conductive integration region comprise a conductive band; further comprising a mounting structure to which said external structure is mounted, wherein said mounting structure consists of only a first conductive regions, a second conductive region, and a third conductive region; wherein said first conductive region comprises conductive material in a first via, said second conductive region comprises conductive material in a second via, and said third conductive region comprises conductive material in a third via.


In a third aspect the claims define a circuit comprising an internal structure of an energy conditioner having A and B layers in the same plane and tabs extending to at least three side surfaces; a source, and a load, wherein said internal structure is connected in said circuit in a circuit 1 configuration; a circuit comprising an internal structure of an energy conditioner having A and B layers in the same plane and tabs extending to at least three side surfaces, a source, and a load, wherein said internal structure is connected in said circuit in a circuit 2 configuration; a circuit comprising an internal structure of an energy conditioner having A, B, and G master electrode components, a source, and a load, wherein said internal structure is connected in said circuit in a circuit 3 configuration; a circuit comprising an internal structure of an energy conditioner having A, B, and G master electrode components, a first source, a second source, a first load, and a second load, wherein said internal structure is connected in said circuit in a circuit 4 configuration; a circuit comprising an internal structure of an energy conditioner having A, B, and G master electrode components, a first source, a first load, and a second load, wherein said internal structure is connected in said circuit in a circuit 5 configuration; a circuit comprising said internal structure of an energy conditioner having A, B, and G master electrode components, a first source, a first load, and a second load, wherein said internal structure is connected in said circuit in a circuit 6 configuration.


In additional aspects, the invention comprises an assembly having an energy conditioner having an internal structure, a mounting structure; and wherein said internal structure is mounted on said mounting structure; wherein said mounting structure comprises no more than three separate conductive elements; an assembly comprising: an energy conditioner having an internal structure including components of A, B, and G master electrodes, and an external structure comprising conductive regions that conductively connect components of the A master electrode to one another, components of the B master electrode to one another, and components of the G master electrode to one another; a mounting structure; wherein said internal structure is mounted on said mounting structure; wherein said mounting structure consists of only a first conductive region, a second conductive region, and a third conductive region; and wherein said A master electrode contacts said first conductive region, said B master electrode contacts said second conductive region, and said G master electrode contacts said third conductive region.


In additional aspects, the claims define that said G master electrode includes a first G conductive integration region that and a second G conductive integration region spatially separated and not contacting said first G conductive integration region, wherein both said a first G conductive integration region and said second G conductive integration region contact said third conductive region.


In another aspect, the claims define an internal structure of an energy conditioner: wherein said internal structure has a left side surface, a right side surface, an upper side surface, a lower side surface, a top side surface, and a bottom side surface; wherein said internal structure comprises a dielectric material and a conductive material; wherein surfaces of said dielectric material and surfaces of said conductive material define said left side surface, said right side surface, said upper side surface, said lower side surface, said top side surface, and said bottom side surface; wherein said conductive material comprises a stack of at least seven conductive layers in the following order from top to bottom: A1; G1; B1; G1; A1; G1; and B1 wherein each A1 conductive layer has an A1 first tab that extends to said upper side surface near said left side surface and an A2 tab that extends to said lower side surface near said left side surface; wherein each G1 conductive layer has a G1 first tab that extends to said left side surface and a G2 tab that extends to said right side surface near; and wherein each B1 conductive layer has a B1 first tab that extends to said upper side surface near said right side surface and a B2 tab that extends to said lower side surface near said right side surface. In dependent aspects, each tab of the same type has a vertical overlap with all other tabs of the same type, and conductive integration regions conductively connect layers of the same type only to one another; and wherein additional conductive layers exist within the seven layer sequence.





BRIEF DESCRIPTION OF THE DRAWINGS

The figures show elements of embodiments of the inventions. The same reference number in different figures refers to identical elements or elements with similar structure or function.



FIG. 1A is a plan view of a conventional digital circuit board, also called a PC board, for a conventional high speed VLSI IC (Very Large Scale Integration Integrated Circuit) chip;



FIG. 1B is schematic partial edge side sectional view of the conventional board of FIG. 1A;



FIG. 2A is a partial side sectional view of a structure including a more than two terminal energy conditioner mounted via pads to a board, showing vias connecting the conditioner and conductive planes in the board;



FIG. 2B is another side sectional view showing power and ground planes and connection of the multi terminal conditioner to the power and ground planes;



FIGS. 3A to 3K are perspective views of exterior surfaces of novel energy conditioners disclosed herein, particularly showing surfaces of conductive band structures, C, and surfaces of dielectric material, D;



FIGS. 4A-O are plan views each showing arrangements of conductive elements of mounting surface structure, including conductive pad and/or via structure to which novel discrete component energy conditioners disclosed herein may be mounted;



FIGS. 5A and 5B are plan views showing geometric relationships of vias;



FIG. 6A is a schematic view showing a novel combination of a novel energy conditioner on an arrangement of mounting surface structure elements including conductive pads and vias, with two vias per pad;



FIG. 6B is a schematic view showing a novel combination of a novel energy conditioner on an arrangement of mounting surface structure elements including conductive pads and vias, with two vias per pad, and a central pad that extends further than the outer two pads such that the central pad contacts conductive terminals, caps, or bands on left and right hand sides of the energy conditioner;



FIG. 6C is a top plan view showing a novel combination of a novel energy conditioner on an arrangement of mounting surface structure elements including conductive pads and vias showing overlap of terminals of the conditioner with vias;



FIG. 7 is a partial schematic of circuit one for use with an energy conditioner having A, B, and G master electrodes;



FIG. 8 is a partial schematic of circuit two for use with an energy conditioner having A, B, and G master electrodes;



FIG. 9 is a partial schematic of circuit three for use with an energy conditioner having A, B, and G master electrodes;



FIG. 10 is a partial schematic of a circuit four for use with an energy conditioner having A, B, and G master electrodes;



FIG. 11 is a partial schematic of a circuit five for use with an energy conditioner having A, B, and G master electrodes;



FIG. 12 is a partial schematic of a circuit six for use with an energy conditioner having A, B, and G master electrodes;



FIG. 13 is an exploded view of a stack of four plates internal to a novel energy conditioner in which the plate elements have been displaced laterally in the page;



FIG. 14 is a schematic plan view of an assembly of the plates of FIG. 13;



FIG. 15 is an exploded view of a stack of three plates internal to a novel energy conditioner in which the plate elements have been displaced laterally in the page;



FIG. 16 is an exploded view of a stack of three plates internal to a novel energy conditioner in which the plate elements have been displaced laterally in the page;



FIG. 17 is an exploded view of a stack of three plates internal to a novel energy conditioner in which the plate elements have been displaced laterally in the page;



FIG. 18 is an exploded view of a stack of three plates internal to a novel energy conditioner in which the plate elements have been displaced laterally in the page;



FIG. 19 is an exploded view of a stack of three plates internal to a novel energy conditioner in which the plate elements have been displaced laterally in the page;



FIG. 20 is an exploded view of a stack of three plates internal to a novel energy conditioner in which the plate elements have been displaced laterally in the page;



FIG. 21 is an exploded view of a stack of four plates internal to a novel energy conditioner in which the plate elements have been displaced laterally in the page;



FIG. 22 is a set of exploded views of stacks 22A-22H of plates of novel energy conditioners in which the plates of each stack have been displaced vertically in the page;



FIG. 23 is a set of exploded views of stacks 23A-23C of plates of novel energy conditioners in which the plates of each stack have been displaced vertically in the page;



FIG. 24 is an exploded view of a stack of plates of a novel energy conditioner in which the plates have been displaced vertically in the page;



FIG. 25 is an exploded view of a set of two plates of a novel energy conditioner in which the plates have been displaced vertically in the page;



FIG. 26 is a perspective view of an exterior surface of a novel energy conditioner including the stack of two plates shown in FIG. 25;



FIG. 27 is an exploded view of a set of two plates of a novel energy conditioner in which the plates have been displaced vertically in the page;



FIG. 28 is a perspective view of an exterior surface of a novel energy conditioner including the stack of two plates shown in FIG. 27;



FIG. 29 is an exploded view of a set of two plates of a novel energy conditioner in which the plates have been displaced vertically in the page;



FIG. 30 is a perspective view of an exterior surface of a novel energy conditioner including the stack of two plates shown in FIG. 29;



FIG. 31 is an exploded view of a set of two plates of a novel energy conditioner in which the plates have been displaced vertically in the page;



FIG. 32 is a perspective view of an exterior surface of a novel energy conditioner including the stack of two plates shown in FIG. 31; and



FIG. 33 is an exploded view of a stack of 8 plates of a novel energy conditioner in which the plates have been displaced vertically in the page.





DETAILED DESCRIPTION OF THE EMBODIMENTS


FIG. 1A shows PC board 1 having sides 2, 3, 4, and 5, top surface 6, array 7 of structure for mounting discrete capacitors, and region 8 for mounting an IC. Each side of array 7 defines plural rows, such as rows 9 and 10. Each element of array 7 represents mounting structure for mounting a discrete capacitor. Conventional PC boards often have an array including at least two rows of structure for mounting capacitors. Each row may have several to tens of array elements for mounting capacitors. The board is designed so that capacitors mounted to the elements of array 7 sufficiently decouple the power to the IC from active circuitry so that the IC and any other coupled circuit elements functions as intended.


Conventional capacitors are two terminal discrete devices.



FIG. 1B shows a portion of board 1, a source of electrical power 11, a ground 12, mounting structure 13 corresponding to one element of array 7, mounting structure 14 corresponding to another element of array 7, power plane 15, and ground plane 16. In addition, FIG. 1B shows three vias extend down from each mounting structure element, such as vias 17, 18, 19 below mounting structure 13. Use of more than two vias enables mounting unconventional devices, such as 3 terminal energy conditioners.


In operation, power source 11 distributes electrical power to circuit elements mounted to board 1 via conductive connection of power source 11 to power plane 15. Ground plane 16 conductively connects to ground 12. Vias 17 and 19 conductively connect to power plane 15. Via 18 does not conductively connect to power plane 15 and instead passes through an aperture in power plane 15 to ground plane 16. Power plane 15 is above ground plane 16.



FIG. 2A shows assembly 200 including energy conditioner 201 mounted on board 1. Board 1 includes pads 202, 203, 204 that separate conditioner 201 from board surface 6 by a distance 205 as indicated by the distance between facing arrows 206. Vias 17, 18, 19, have a width 207 as indicated by the distance between facing arrows 209.



FIG. 2B shows additional structure underneath conditioner 201 including additional power, ground, and/or signal planes 208, 209, 210, and aperture 211 through which the conductive path in via 18 passes without shorting to power plane 15. Additional power, ground and/or signal planes may exist in any particular board.


In operation, power feed from source 11 through one or more power planes provides power for active circuitry in the IC mounted in region 8 to operate. Conditioners mounted to the elements of array 7, one conditioner per array element, decouple transients otherwise induced in power due to switching and the like in the active circuitry of the IC.



FIGS. 3A to 3K are perspective views of exterior surfaces 3A to 3K of certain novel energy conditioners disclosed herein. In FIGS. 3A to 3K, “C” denotes electrically conductive material and “D” denotes dielectric material (electrically insulating). The electrically conductive portions, C, may be referred to herein as bands or outer terminals.



FIG. 3A shows conductive bands C, and FIG. 3G shows conductive bands C, for purpose of discussion with energy conditioner internal structure disclosed herein below.



FIG. 4A-4O each show one arrangement of conductive elements of mounting structure for mounting a single one of the novel discrete energy conditioners. These arrangements are also referred to as land patterns. The mounting surface may be a surface of a PC board, first level interconnect, or semiconductor chip.



FIG. 4A shows an arrangement 4A of mounting surface structure including a set of three generally rectangularly shaped conductive pads 401, 402, 403. Conductive pads 401, 402, 403, have relatively long sides (unnumbered) and relatively short sides. The relatively short sides are labeled 401A, 402A, 403A. Relatively short sides 401A, 402A, 403A are aligned with one another such that a straight line segment could contact substantially all of short sides 401A, 402A, 403A. Conductive pad 401 contains vias 401V1, 401V2. Conductive pad 402 contains vias 402V1, 402V2. Conductive pad 403 contains vias 403 V1, 403V2. Vias 401 V1, 402V1, and 403 V1 are aligned such that a single line segment could intersect them. Vias 401V2, 402V2, and 403V2 are aligned such that a single line segment could intersect them.


In alternatives to arrangement 4A, pads may have different sizes, lengths, or widths from one another. For example, pad 402 may be shorter than pads 401, 403.


In another alternative to arrangement 4A, outer pads 401, 403 may have a different shape than central pad 402. For example, outer pads 401, 403 may include convex central regions and/or flared end regions. For example, outer pads 401, 403 may be the same length as one another but shorter or longer than central pad 402.


In another alternative to arrangement 4A, certain vias may have a diameter larger than the width or length of the pad to which they are attached such that the via is not entirely contained within the footprint of a conductive pad. For example, a via diameter may be equal to a width of a conductive pad, 1.5, 2, or 3 times a width of the conductive pad.


In another alternative to arrangement 4A, certain vias may have different cross-sectional diameters from one. For example, cross-section diameters of vias connecting to the central pad 402 may be ⅓, ½, 1, 1.5, 2, or 3 times the cross-sectional diameter of vias connecting to outer pads 401, 403.


In another alternative to arrangement 4A, vias 402V1, 402V2 may be spaced from one another by more than or less than the spacing between vias 401V1, 401V2 and the spacing between 403V1, 403V2.


In another alternative to arrangement 4A, each conductive pad may contain one, two, three, or more vias. For example, each conductive pad 401, 402, 403 may contain a single via. For example, pads 401 and 403 may contain 2 or 3 vias and pad 402 may contain one via. For example, pads 401 and 403 may contain 1 via and pad 402 may contain 2 or 3 vias.


In another alternative to arrangement 4A, the pads may not exist in which case just conductive vias exist in one of the foregoing arrangements. For example, two parallel rows of three vias.


In another alternative to arrangement 4A, some pads may have connected vias and some may not. For example, central pad 402 may contain 1, 2, 3, or more vias and outer pads 401, 403 may contain no vias. For example, central pad 402 may contain no vias and each outer pad 401, 403, may contain 1, 2, 3, or more vias.


In another alternative to arrangement 4A, the cross-sections of vias may not be circular, such as elliptical, elongated, or irregular.



FIGS. 4B-4L show various arrangements of the alternatives discussed above.



FIG. 4B shows arrangement 4B of mounting structure having vias of pad 402 more widely spaced from one another than the spacing between vias of either pad 401 or pad 403.



FIG. 4C shows arrangement 4C of mounting structure having vias having elongated elliptical cross-sections.



FIG. 4D shows arrangement 4D of mounting structure having a single via in each one of pads 401, 402, 403.



FIG. 4E shows arrangement 4E of mounting structure having outer pads 401, 403 having one centrally located via.



FIG. 4F shows arrangement 4F of mounting structure having pads 401, 402, 403 having no vias. In this alternative, conductive lines may radiate along the surface of the structure from each pad.



FIG. 4G shows arrangement 4G of mounting structure having pads 401, 402, 403 each having three vias, each via in each pad aligned with one via in each one of the other two pads.



FIG. 4H shows arrangement 4H of mounting structure having a single via in each pad, and in which the central pad 402 is short than the outer pads 401, 403.



FIG. 41 shows arrangement 41 of mounting surface structure having equal length pads 401, 402, 403, and in which the central pad 402 connects to only one via whereas the outer pads 401, 402 connect to 2 vias.



FIG. 4J shows arrangement 4J of mounting structure having three pairs of vias, and no pads.



FIG. 4K shows arrangement 4K of mounting structure having outer pads 401, 403 connecting to two vias and central pad 402 connecting to three vias.



FIG. 4L shows arrangement 4L of mounting structure having central pad 402 connecting to one via and outer pads 401, 403 having no vias.



FIG. 4M shows mounting structure 4M having cental pad 402 extending further than pads 401, 403, and vias in central pad 402.



FIG. 4N shows mounting structure 4N having via 501 having a larger diameter than via 502. Moreover, larger via 501 is more centrally located than the other smaller diameter vias. That is, FIG. 5N contemplates benefits from conductively filled or lined vias of different dimensions from one another, and in which the larger vias are more centrally located relative to the energy conditioner to which they connect.



FIG. 4O shows mounting structure 40 having central pad 402 extending symmetrically further than pads 401, 403.


Preferably, vias in each pad are spaced symmetrically on either side of the center of the pad. Preferably, the arrangement of vias is symmetric about the center point of central pad 402.


The inventors contemplate all variations of arrangements of mounting structures (pads and vias combinations, sizes, and shapes) and energy conditioners mounted therein that provide conductive connection between the conductive elements of the mounting structure and A, B, and G master electrodes (defined herein below) internal to the energy conditioner. The A, B, and G master electrodes either have regions forming part of the surface of the energy conditioner or internally physically contact conductive bands (outer electrodes) forming part of the surface of the energy conditioner. Thus, all variations of the conductive band structures and mounting structure that provide suitable connection to the A, B, and G master electrodes are contemplated. In addition, the inventors contemplate all variations of energy conditioners lacking conductive band (outer electrodes) that can be mounted on and soldered (or conductively pasted) to the board thereby conductively connecting the A, B, and G master electrodes to the conductive regions of the mounting structure.


Herein, conductive integration region, means either a conductive band or equivalent solder providing the contact to tabs of layers of a master electrode thereby conductively integrating those conductive layers to one master electrode. Tabs mean those portions of conductive layers of an internal structure of an energy conditioner that extend to the upper, lower, left or right side surfaces of the internal structure. Main body portions of conductive layers of an internal structure means those portions of the conductive layers that do not extend to the upper, lower, left or right side surfaces of the internal structure.


Thus, the inventors contemplate all combinations of the mounting structure configurations for mounting a conditioner to a surface and (1) either conductive band configurations or exposed A, B, and G master electrodes surfaces of energy conditioners that provide suitable connections for the A, B, and G master electrodes.


Some combinations of novel energy conditioner and surface mounting structure provide (1) a first conductive and mechanical contact, such as a solder connection, to at least one and more preferably all conductive bands connected to one side of the A and B master electrodes, (2) a second conductive and mechanical contact, such as a solder contact, to at least one and preferably all conductive bands connected to the opposite side of the A and B master electrodes, and (3) a third conductive contact to at least one and preferably all bands connected to both of the opposite ends of the G master electrode. The foregoing reference to electrical contact includes situations where DC current is blocked, such as where a dielectric cap or layer exists somewhere along a via.



FIG. 5A shows geometric values and dimensions for one currently preferred mounting structure.



FIG. 5B shows geometric values and dimensions for another currently preferred mounting structure.


It has been determined by numerical calculations that the values shown in FIGS. 5A and 5B provided superior decoupling when 0603 X2Y type energy conditioners are mounted thereto. 0603 X2Y type capacitors have a capacitance of 1 to 100 nano farads, and nominal length, width, and thickness and height of 0.8, 0.6, 0.6, and 0.4 millimeters, respectively, as indicated for example by the URL: http://www.yageo.com/pdf/X2Y_series10.pdf?5423212=EE8DCCAFD2263EBA74A6443AF7A8BC75&4620207=.



FIGS. 6A-6B each schematically show a combination of a novel energy conditioner having a certain exterior surface structure in operable location on mounting structure.



FIG. 6A shows an arrangement 6A of energy conditioner 601 on mounting structure 4A. Conditioner 601 had exterior surface structure 3A. Conductive band C1 is on top of conductive pad 401. Part of conductive band C2 is on top (since its ends extend beyond) of a first end of conductive pad 402. Conductive band C3 is on top of pad 403. Conductive band C4 is on top of a second end of conductive pad 402. The first and second ends of conductive pad 402 are on opposite sides of energy conditioner 601 from one another. Vias and portions of pads hidden from view are shown in dashed lines.



FIG. 6B shows arrangement 6B of energy conditioner 602 mounted on arrangement 4O of FIG. 4O. Conditioner 602 also has exterior surface structure 3A. Conductive band C1, C3 contact near opposite ends of conductive pad 402. Conductive bands C4, C2 contact respectively to conductive pads 401, 403.



FIG. 6C shows arrangement 6C of energy conditioner 603 mounted on mounting structure 4J showing alignment of conductive bands of conditioner 603, and also solder, on vias of mounting structure 4J.



FIGS. 7-12 show circuits including an energy conditioner having A, B, and G master electrodes, which relate to the special properties of such conditioners. The inventors have determined that connection of the G master electrode at at least two points, preferably at two points on opposite sides from one another, provides significant advantages. This is in spite of the fact that the G master electrode is a single conductive structure wherein location of connection would not be relevant in a lumped circuit representation. Circuit diagrams rely upon a lumped circuit model for accuracy of representation. In order to represent this geometric requirement relating to distributed circuit design in lumped circuit figures, the inventors schematically represent the energy conditioners as devices having at least 3 terminal device, with A, B, G terminals. More terminals may exist for each master electrode, and additional master electrodes may be integrated into the same component. The inventors have also determined that relative locations of A, B, and G electrode terminals relative to the A, B, and G master electrode structures, may affect performance of the energy conditioners. FIG. 7-12 therefore show circuits peculiar to this type of energy conditioner.


In FIGS. 7-12, external terminal A conductively connects to the A master electrode, external terminal B conductively connects to the B master electrode, external terminal G1 conductively connects to the G master electrode. More specifically as used in FIGS. 7-12, embodiments having at least 2 G external terminals, such as a G1 and G2, a first side of the G master electrode, and external terminal G2 conductively connects to a different side of the G master electrode.



FIGS. 7-12 each show conditioner 700, and external terminals A, B, G1, and G2. The G master electrodes is represented by portions 702, 705, and the A and B master electrodes are represented respective by flat plate elements 703, 704. Internal to conditioner 700, the G master electrode is spaced between or acts to shield the effects of charge buildup on the A master electrode from the B master electrode. This is schematically represented by the portion 702 of the G master electrode extending between the flat plate elements 703, 704 of the A and B master electrodes. G master electrode portion 705 schematically represents shielding by the G master electrode of the A and B master electrodes relative to space outside conditioner 700.



FIG. 7 show a circuit 1 configuration for a conditioner 700 having A, B, and G master electrodes. In circuit one, external terminal A conductively connects to node AS of conductive path S between a source of electrical power, SOURCE, and a load, LOAD. In addition, external terminal B conductively connects to node BR of a return conductive path R between LOAD and SOURCE. In addition, external G1 and G2 terminals both conductively connect to a source of ground/constant potential P. Arrows above and below conductive paths between SOURCE and LOAD indicate that current flows in a loop.



FIG. 8 shows a circuit 2 configuration wherein external terminal A is tied to node AS on path S, external terminal B is tied to node BS also on path S, external terminal G1 is tied to node G1R on path R, and external terminal G2 is tied to node G2R also on path R.



FIG. 9 shows a circuit 3 configuration wherein external terminal A is tied to node AS on path S, external terminal B is tied to node BR on path R, external terminal G1 is tied to node G1R on path R, and external terminal G2 is tied to node G2R on path R.



FIG. 10 shows a circuit 4 configuration wherein external terminal A is tied to a node on path S, and external terminals G1, B, and G2 are tied to nodes on path R.



FIG. 11 shows a circuit 5 configuration wherein external terminal A is tied to a node on source path Si from a source to a first load, L1, external terminal B is tied to a node S2 on a path from a source to a second load L2, and external terminals G1 and G2 are tied to a common return path CR.



FIG. 12 shows a circuit 6 configuration wherein external terminal A is tied to a node on path R (see element R in FIG. 7), external terminal B is tied to a node on path R, and external terminals G1 and G2 are tied to nodes on path S (see element S in FIG. 7).


Relation of Internal Structure to External Structure of Energy Conditioners


FIGS. 13-33 generally show structure internal to the external surface 3A to 3K of FIGS. 3A-3K. The configuration of conductive layers of FIGS. 13-33 can be arranged relative to the external surfaces 3A to 3K so that the conductive layers of the A master electrode contact the same conductive band or bands as one, the conductive layers of the B master electrode contact the same conductive band or bands as one, and the conductive layers of the G master electrode contact the same conductive band or bands as one. Alternatively, instead of conductive bands, solder applied to the sides of the conditioners may conductively contact the conductive layers of the A master electrode to one another, the conductive layers of the B master electrode to one another, and the conductive layers of the G master electrode to one another. The same solder contacts may also contact corresponding conductive regions of the mounting structures shown in FIGS. 4A to 40.


Meaning of “Plate”, and Interconnector and IC Alternative Embodiments

The term “plate” herein generally is used to simplify explanation by defining a combination of a dielectric under layer with none, one, or more than one distinct conductive over layers. However, the relevant structure is the sequence of conductive layers separated by dielectric material. The hidden surface of the structures referred as plates in the following figures represents a dielectric surface; that is, dielectric material vertically separating the defined conductive layers from one another. In discrete energy conditioner component embodiments, the structure are often formed by layering dielectric precursor material (green material) with conductive layer precursor material (conductive paste or the like), firing that layered structure at temperatures sufficient to convert the dielectric precursor to a desired structurally rigid dielectric material and to convert the conductive precursor layer to a high relatively conductivity (low resistivity) conductive layer. However, embodiments formed in interconnects and semiconductor structures would use different techniques, including conventional lithographic techniques, to fabricate equivalent or corresponding structures to those shown in FIGS. 13-25, 27, 29, 31, and 33. Importantly, the conductive bands and solder connections for stacked layers discussed herein below would in many cases be replaced by an array of conductively filled or lined vias selectively connecting conductive layers of the same master electrode to one another. Preferably, those vias would be spaced to selectively contact the tab regions of the A, B, and G layers discussed herein.


Regardless of the mechanism of formation, it is the existence of the master electrodes' morphologies, assembly with external conductive structure, assembly with mounting structure, and integration into circuits 1-6 that are functionally important for decoupling.


Common Features of Internal Structure of Energy Conditioners

A master electrode refers to the conductive layers or regions internal to an energy conditioner and the structure internal to the energy conditioner physically contacting those conductive layers or regions so that they form one integral conductive structure.


Internal structure of energy conditioners includes conductive layers or regions spaces by dielectric material from other conductive layers or regions. The conductive layers or regions each have tab regions that extend to an edge or periphery of the dielectric material. An edge of each tab region of each conductive layer is contacted to external surface conductive structure. The external surface conductive structure may be either conductive bands integral to the discrete energy conditioner or by solder employed also to mount the energy conditioner internal structure to mounting structure. In energy conditioner internal structures having a plurality of conductive layers or regions designed to form a single master electrode, tabs of those conductive layers or regions are vertically aligned in the stack of layers so that a single conductive tab may conductively connect those conductive layers or regions to thereby form a master electrode.


Alternatively, or in addition to conductive bands or solder connecting to externally exposed edges of conductive layers or regions of a master electrode, conductively filled or lined vias may selectively connect to the same conductive layers or regions.


RELATIONSHIP BETWEEN INTERNAL STRUCTURES OF ENERGY CONDITIONERS AND EXTERNAL STRUCTURE OF ENERGY CONDITIONERS

Each one of the internal structures of energy conditioners shown in FIGS. 13-25, 27, 29, 31, and 33 may reside in each one of external surface 3A to 3K of FIGS. 3A-3K in two distinct configurations. In one configuration, a first set of tabs of a G conductive layer of the G master electrode are on the left and right sides (as shown in FIGS. 3A to 3K) of the external surfaces 3A to 3K. In the other configuration, the same first set of tabs of that same G conductive layer of the G master electrode are on the upper and lower sides (as shown in FIGS. 3A to 3K) of the external surfaces 3A to 3K. In each configuration of the internal structures of energy conditioners shown in FIGS. 13-25, 27, 29, 31, and 33 and external surfaces 3A to 3K, the conductive layers of the A and B master electrodes each have a region that extends into contact with at least one conductive band (or solder, when solder is applied) of the corresponding one of external surfaces 3A to 3K.


Relationship Between Internal Structures of Energy Conditioners, External Structure of Energy Conditioners, and Circuits 1-6

At least in circuits wherein the A and B master electrode are not tied to the same conductive path of the circuit (circuits 1, 3, 4, and 5; see FIGS. 7-12), the conductive layer or layers of the A master electrode do not contact the same conductive band on external surfaces 3A to 3K as the conductive layer or layers of the B master electrode.


At least in circuits wherein the A master electrode is not tied to the same conductive path of the circuit as the G master electrode (circuits 1-6; see FIGS. 7-12), the conductive layer or layers of the A master electrode do not contact the same conductive band on external surfaces 3A to 3K as the conductive layer or layers of the G master electrode.


At least in circuits wherein the B master electrode is not tied to the same conductive path of the circuit as the G master electrode (circuits 1,2 and 6; see FIGS. 7-12), the conductive layer or layers of the B master electrode do not contact the same conductive band on external surfaces 3A to 3K as the conductive layer or layers of the G master electrode.


Features Common to Various Internal Structures Shown in FIGS. 13-33.


FIGS. 13-33 all show structures wherein a G master electrode has at least two distinct tabs. As used herein, tab does not require a narrowing or necking compared to a body. Instead, it requires only extension to an edge of a dielectric structure. However, many of the conductive layers of G master electrodes shown in FIGS. 13-33 include tab regions that are narrowed or necked compared to the region of the same conductive layer not adjacent the edge of dielectric structure.



FIGS. 13-16, 21, 22, 23 show conductive layers of an A master electrode and conductive layers of a B master electrode that each have only have one distinct tab.



FIGS. 17, 18, 19, 24, 25, 27, 29, 31, and 33 show conductive layers of an A master electrode and conductive layers of a B master electrode that each have two distinct tabs.



FIGS. 20 shows conductive layers of an A master electrode and conductive layers of a B master electrode that each have three distinct tabs.



FIGS. 13, 16, 17, 18, 19, 20, 21, 22, 23, and 24 show plates having conductive layers of A and B master electrodes that extend to portions of at least three edges of their plate.



FIGS. 13-25, 27, 29, 31, and 33 show internal structure of novel energy conditioners.



FIGS. 28, 30, and 32 show external structure of novel energy conditioner embodiments of FIGS. 27, 29, and 31, respectively;



FIGS. 13-25, 27, 29, and 31 show plates that each have a conductive layer of an A master electrode and a conductive layer of a B master electrode in the same plate.



FIGS. 13-24 show stacks of plates that each have a conductive layer of an A master electrode and a conductive layer of a B master electrode in the same plate, and wherein two such plates are mirror images of one another about a line of symmetry extending vertically or horizontally in the plane of the paper of each figure.



FIGS. 13-24 show both (1) structures that each have a conductive layer of an A master electrode and a conductive layer of a B master electrode in the same plate and (2) stacks of plates wherein a conductive layer of an A master electrode on one plate has a region of substantial overlap with a conductive layer of a B master electrode on another plate.



FIGS. 13-24 show structures that include stacks of plates wherein (1) a first plate has a surface including a conductive layer of an A master electrode and a conductive layer of a B master electrode, (2) a second plate also has a surface including a conductive layer of an A master electrode and a conductive layer of a B master electrode, the conductive layer of the A master electrode in the first plate and the conductive layer of the B master electrode in the second plate have a region of substantial overlap, and (3) a third plate resides between the first two plates and has a conductive layer of a G master electrode extending throughout the region of substantial overlap.



FIGS. 25, 27, and stacks 22A and 22B of FIG. 22 show structures including only a single plate having a surface including a conductive layer of an A master electrode and a conductive layer of a B master electrode, and a single plate having a surface including a conductive layer of a G master electrode.



FIGS. 29 and 31 show structures including only a two plate each having a surface including a conductive layer of an A master electrode and a conductive layer of a B master electrode, and a single plate there between having a surface including a conductive layer of a G master electrode.



FIGS. 21, 22, and 23 show structures including at least one plate having a surface including a conductive layer of an A master electrode, a conductive layer of a B master electrode and a conductive layer of a G master electrode between the aforementioned conductive layers of the A and B master electrodes.



FIGS. 22 stacks 22E and 22G, and FIG. 23 stacks 23A, 23B, and 23C each show structures including plates having a substantial region of a conductive layer of an A master electrode opposing a corresponding region of a conductive layer of a B master electrode on another plate having no intervening conductive layer of a G master electrode there between.



FIGS. 22 stack 22H and FIG. 23 stack 23C show structures in which the outermost conductive layers on one or both ends of the stack have a sequence of two or three conductive layers.



FIG. 33 shows a structure including a stack of plates wherein: (1) each plate has a surface including a conductive layer of only one master electrode, the sequence of conductive layers follows the pattern A, G, B, G, A, G, B; (2) conductive layers of the A and B master electrodes substantially overlap; (3) conductive layers of the G master electrode extend substantially throughout the area of overlap; (4) each conductive layer of the A master electrode has A tabs extends to front and back edges of the corresponding plate; (5) each conductive layer of the B master electrode has B tabs extends to front and back edges of the corresponding plate without overlapping any of the A tabs; and (6) each conductive layer of the G master electrode extends to left and right side edges of the corresponding plate.


DETAILED DESCRIPTION OF FIGS. 13-33

In the following figures, plates of a stack shown displaced horizontally or vertically in the page exist in the stack in the sequence as expanded horizontally or vertically in the page. Each stack includes a top and a bottom spaced from one another in a direction perpendicular to the face of the paper of the figures. In addition, each plate of each stack is shown in the figures as having in the plane of the paper a left side LS, right side RS, upper side US, and lower side LLS.



FIG. 13 shows stack 1300 of plates 1300A, 1300B, and 1300C. Plate 1300A includes dielectric material uniformly extending to the LS, RS, US, and LLS of stack 1300. Conductive layer A1 designed to be part of the A master electrode and conductive layer B1 designed to be part of the B master electrode reside on the surface of dielectric material of plate 1300A. Conductive layers A1 and B1 are separated from one another by exposed dielectric surface D. Conductive layer A1 has a tab A1 T extending to the entire LS, and also the far left sides of the US and LLS. Conductive layer B1 has a tab B1T extending to the entire RS, and also to the far right sides of the US and LLS. Conductive layer A1 has a main body portion A1M extending the majority of the distance from the LS to the RS on the upper half of plate 1300A. Conductive layer B1 has a main body portion B1M extending the majority of the distance from the RS to the LS on the lower half of plate 1300A.


Plate 1300B includes dielectric material on which resides conductive layer G1. Conductive layer G1 has tab G1T1 extending to a central region of the US. Conductive layer G1 has tab G1T2 extending to a central region of the LS. Conductive layer G1 has a main body portion B1M between tabs G1T1 and G1T2.


Plate 1300C includes conductive layer A2 for the A master electrode, conductive layer B2 for the B master electrode. Conductive layers A2 and B2 are separated from one another by exposed dielectric surface D. Conductive layer A2 has a tab A2T extending to the entire LS, and also the far left sides of the US and LLS. Conductive layer B2 has a tab B2T extending to the entire RS, and also to the far right sides of the US and LLS. Conductive layer A2 has a main body portion A2M extending the majority of the distance from the LS to the RS on the lower half of plate 1300A. Conductive layer B2 has a main body portion B2M extending the majority of the distance from the RS to the LS on the upper half of plate 1300A.



FIG. 14 schematically shows the stack of layers 1300C, 1300B, 1300A wherein main bodies A1M and B2M have a region of substantial overlap, and main bodies A2 and B1M have a region of substantial overlap, and conductive layer G1M extends over a substantial portion of the regions of overlap. Preferably, the regions of overlap occupy at least 20, more preferably at least 40 and more preferably at least 60 percent of the area of the A1M conductive layer. Preferably, the G1M layer extends over lat least 40, and more preferably at least 60 percent of the areas of overlap.


The stack of FIGS. 13 and 14, once formed, may be mounted to mounting structure on a PC board or interconnect, and soldered in place to complete the connections of the A, B, and G master electrodes. Alternatively, the structure of FIGS. 13 and 14 may be fabricated with conductive bands forming a portion of the external structure thereby completing formation of the A, B, and G master electrodes.



FIGS. 13 and 14 are only exemplary of a sequence of layers forming an energy conditioner using the plates 1300A, 1300B, 1300C. Alternatively to the FIGS. 13 and 14 stack embodiment, a stack may have an integral number of repeats of the sequence 1300A, 1300B, 1300C. Alternatively, a stack may have the sequence 1300A, 1300B, 1300C followed by any integral number of repeats of either the sequence 1300B, 1300C or the sequence 1300A, 1300B. Alternatively, one, two, or more than two 1300B plates may reside at either or both of the top and the bottom of a stack.



FIGS. 15-20 show alternative shapes for conductive layers of A, B, and G master electrodes wherein each plate having an conductive layer for an A master electrode also has a conductive layer for a B master electrode. The same alternatives and methods of assembly just noted for the FIGS. 13 and 14 embodiment apply to the FIGS. 15-20 stack embodiments.



FIG. 15 shows conductive layer A1M having tab A1T extending over only a portion of LS and over no other side.



FIG. 16 is identical to FIG. 13. FIG. 17 shows a stack of plates including plates 1700A, 1700B, and 1700C. Plate 1700A having conductive layer A1M having tabs A1T1 and A1T2 separated by exposed dielectric D at the center of the LS. Plate 1700B includes conductive layer of a G master electrode include main body portion G1M, and tab portions G1T1, G1T2, G1T3, and


G1T4 in each side edge. Plate 1700C includes conductive layers A2 and B2 for the A and B master electrodes respectively. Tabs of the A1 and A2 plated, the B1 and B2 plates in the stack are vertically aligned. Dielectric surface is exposed at the center of each side of plate 1700A and 1700C. The existence of exposed dielectric surfaces vertically aligned in the stack of plates, and existing on each side of the plates having conductive layers for the A and B electrodes, enables the existence of G tabs aligned on each side of the stack to be contacted by a conductive connecting material (conductive band or solder) without shorting the G tabs to the A or B tabs. In one alternative to FIG. 17, the G1 layer has only two tabs that extend to either the US and LLS or the LS and RS.



FIG. 18 shows a stack of plates wherein the conductive layers for the A master electrode each have two tabs, and those tabs are not completely aligned with one another. FIG. 18 shows layer A1 and A2 having tabs A1T1 and A2T1 that only partially align at the left side of the US. Similarly the remaining tabs for the A and B layers have partial overlap.



FIG. 19 shows a stack similar to that shown in FIG. 18 except that extent of the tabs of the A1, B1, A2, and B2 layers is reduced so that the exposed dielectric D extends over the center of the LS and RS, and the G1 layer has four tabs two of which extend to the center of the LS and RS. In one alternative to FIG. 19, the G1 layer has only two tabs that extend to either the US and LLS or the LS and RS.



FIG. 20 shows a stack wherein the A1 layer has tabs that extend to portions of the LS, US, and LLS, but not to any corner, and not to the center of the LS. This configuration enables up to three separate conductive connections on the side of the stack to the A layer, and likewise to the B layer, for example with the external structure 3K's left side and right side conductive bands connecting to the A and B layers.



FIG. 21 shows a stack 2100 including plates 2100A, 2100B, 2100C, and 2100D. Each one of plates 2100A and 2100C contain conductive layers for the A, B, and G master electrodes separated by dielectric D. Plate 2100A includes conductive layer A1 that includes tab A1T1 extending over the entire LS and portions of the left end of the US and LLS. Plate 2100A also includes conductive layer B1 that includes tab B1 extending over the entire RS and portions of the right end of the US and LLS. Between A1 and B1 resides conductive layer G1 that winds between the main body portions of A1 and B1 to tabs G1T1 and G1T2 in the center of the US and LLS. Plate 2100B includes layer G2 having tabs G2T1 and G2T2 in the center of the US and LLS. Plate 2100C includes layers A2, B2, and G3, and it is a mirror image of plate 2100A. Plate 2100D is identical to plate 2100B. The stack 2100 has all tabs for the G layers aligned in the center of the US and LLS so that the G layers between A and B layers as well as the G layers above or below A and B layers are integrated into the G master electrode. Alternatively, stack sequences are feasible, including the plate sequence 2100A, 2100B, 2100C, and 2100D followed or preceded by any number of repetitions of either 2100C, 2100D or 2100A, 2100B; by including 2 or more of plates of the form of 2100B/2100D instead of single plates, and not including the central G conductive layer in one, or alternating ones of the plates of the form 2100A/2100C, and including one, two, or more plates of the form of 2100B/2100D at one or both ends of the stack.



FIG. 22 shows stacks, 22A to 22H each including additional alternative stacks of the plates 2100A to 2100D. Note in particular that stacks 22A, 22B, and 22C have less than 4 plates; one, two, and three plates or layers, respectively.



FIG. 23 shows stacks 23A, 23B, and 23C which employ the same plates 2100A, 2100B, 2100C, 2100D as the stack of FIG. 21. However, FIG. 23's sequence differs from the sequences in FIGS. 21 and 22 in that there are adjacent pair 2301 of mirror image layers M, M′ where overlap regions of conductive surfaces for A1 and B1 layers oppose one another without an intervening conductive layer for the G master electrode, like layers G2 and G4 of FIG. 21. There are also plates where G conductive layers like layers G2 and G4 do bracket a layer in which A, B, and G conductive layers reside, like plate 2302. FIG. 23 shows paired layers M, M′. Alternatively, stack sequences may include any number of repeats of the pair of M, M′ adjacent to one another with or without any of the layers having a single G layer, like layers G2 and G4 of FIG. 21. Preferably, there is an odd total number of layers in which conductive layers exist, and an odd total number of layers in which only layers forming part of the G master electrode exist.



FIG. 24 shows a stack containing plates having various shapes from the preceding embodiments (a top plate having the same conductive pattern as the left side plate in FIG. 18, a second from top plate having the conductive pattern of G1 in FIG. 13, a third plate having the conductive pattern of a plate from FIG. 19, a fourth plate representing a dielectric spacer region, and a fifth plate like the third plate) showing the plates of different shapes and sizes and of non-uniform spacings may exist in stacks contemplated by the inventors. All such modifications and variations of layers are within the scope contemplated.



FIGS. 25-28 are views of energy conditioners including conductive layers on only two planes and various external structures.



FIG. 25 shows stack 25A containing plate 2500A and 2500B. An upper surface of plate 2500A is formed from surfaces of conductive layer A1, conductive layer B1, and exposed dielectric material D. An upper surface of plate 2500B is formed from conductive layer G1 and exposed dielectric material D. A1 has tabs A1T1 near the left hand end of the US and A1T2 at near lower left hand end of the LLS. G1 has tabs G1T1 in the middle of the US and G1T2 in the middle of the LLS. A1 does not extent to the RS, and B1 does not extend to the LS. A1 has main body portion A1M. B1 has main body portion B1M. A1M extends to a location closer to the US and RS than the LLS and LS. B1M extends to a location closer to the LS and LLS than the US and RS.



FIG. 26 schematically shows an energy conditioner defined by one arrangement of (1) stack 25A and (2) external structure 3A of FIG. 3A. In this arrangement, tabs A1T1 and A2T2 contact internal surfaces of conductive band C1, tabs G1T1 and G1T2 respectively contact internal surfaces of bands C2 and C4, and tabs B1T1 and B1T2 contact internal surfaces of conductive band C3.


In one alternative external structure, the third conductive integration structure and the fourth conductive integration structure form a single conductive band around the outer surface of said energy conditioner. The same alternative applies to FIGS. 28, 30, and 32.



FIG. 27 shows stack 27A including plates 2500A and 2700B. Plate 2700B differs from plate 2500B in that the tabs G1T1 and G1T2 of layer G1 are in the LS and RS as opposed to the US and LLS.



FIG. 28 schematically shows an energy conditioner defined by one arrangement of (1) stack 27A and (2) external structure 3A of FIG. 3A. Tabs A1T1 and B1T1 contact the internal surface of conductive band C3, tabs A1T2 and B1T2 contact the internal surface of conductive band C1, tab G1T1 contacts the internal surface of conductive band C2, and tab G1T2 contacts the internal surface of conductive band C4. In this energy conditioner, the A and B master electrodes are conductively tied together at the edges of the tabs by conductive bands C1, C3.



FIGS. 29-32 are views of energy conditioners including conductive layers on three planes and various external structures.



FIG. 29 shows stack 29A including plates 2500A and 2500B. Stack 29A also includes another plate 2500C (not shown) having the same layered pattern as plate 2500A and on an opposite side of plate 2500A relative to plate 2500B. Plate 2500C has elements A2T1, A2T2, B2T1, B2T2, A2M, and B2M aligned with corresponding elements of plate 2500A. Plate 2500C has conductive layers A2 and B2 having tabs aligned with corresponding tabs of plate 2500A, including tab A2T1, A2T2, B2T1, and B2T2. In addition, plate 2500C has A1M and B1M as shown in FIG. 25.


Alternatively, for FIG. 29, and stack 29A, plate 2500C may be replaced by a plate having a conductive pattern that is a mirror image of the conductive pattern on plate 2500A, the mirror defined by a vertical line passing through the center of conductive plate 2500A. In this alternative, conductive tabs A1T1 and A2T2, for example, are still vertically aligned and conductively connected by contacts to the inner surface of conductive band C1. However, in this alternative, A1M has a substantial overlap with B2M, and A2M has a substantial overlap with B1M.



FIG. 30 schematically shows an energy conditioner defined by one arrangement of (1) stack 29A and (2) external structure 3A of FIG. 3A. In this structure, tabs for conductive layers of the same master electrode are aligned in the stack and contact conductive band structure. For example, tabs A1T1 and A2T1 are aligned and contact the internal surface of conductive band C1. In an alternative to stack 29A, discussed above, A1M has a substantial overlap with B2M, and A2M has a substantial overlap with B1M. As with other embodiments, additional alternatives stacks include a repeating sequences of the three plates of layers of stack 29A, and irregular sequences of 2500A, 2500B, and 2500C, and the alternative to 2500C noted above.



FIG. 31 shows stack 31A including plates 2500A and 2500B. Stack 31A also includes a second plate 2500C having the same layered pattern as plate 2500A and on an opposite side of plate 2500A relative to plate 2500B. Plate 2500C has conductive layers A2 and B2 having tabs aligned with corresponding tabs of plate 2500A, including tab A2T1, A2T2, B2T1, and B2T2.



FIG. 32 schematically shows an energy conditioner defined by one arrangement of (1) stack 31A and (2) external structure 3A of FIG. 3A. In this structure, tabs for conductive layers of the same master electrode are aligned in the stack and contact conductive band structure. For example, tabs A1T1 and A2T1 are aligned and contact the internal surface of conductive band C1.


Alternatively, for FIG. 31, plate 2500C may be replaced by a plate having a conductive pattern that is a mirror image of the conductive pattern on plate 2500A, the mirror defined by a vertical line passing through the center of conductive plate 2500A. In this alternative, conductive tabs A1T1 and A2T2, for example, are still vertically aligned and conductively connected by contacts to the inner surface of conductive band C1. As with other embodiments, additional alternatives stacks include a repeating sequences of the three plates of layers of stack 29A, and irregular sequences of 2500A, 2500B, and 2500C, and the alternative to 2500C noted above.



FIG. 33 shows stack 33A including a sequence of plates 3300A, 3300B, 3300C, 3300B, 3300A, 3300B, 3300C.


Plates 3300A each have an upper surface that consists of a surface of conductive layer A1 and exposed dielectric surface D. Conductive layer A1 consists of tabs A1T1, A1T2, and main body portion AMB. Conductive layer A1 is part of an A master electrode. Tab A1T1 extends to the US near the LS. Tab A1T2 extends to the LLS near the LS. AMB extends from tabs A1T1 and A1T2 towards the LS. Plates 3300B each have an upper surface that consists of a surface of conductive layer G1 and exposed dielectric surface D. Conductive layer G1 consists of tabs G1T1, G1T2, and main body portion GMB. Tab G1T1 extends to the middle of the LS. Tab G1T2 extends to the middle of the RS.


Plates 3300C each have an upper surface that consists of a surface of conductive layer B1 and exposed dielectric surface D. Conductive layer B1 consists of tabs B1T1, B1T2, and main body portion BMB. Conductive layer B1 is part of a B master electrode. Tab B1T1 extends to the US near the LS. Tab A1T2 extends to the LLS near the LS. AMB extends from both tabs A1T1 and A1T2 towards the center.


Stack 33A also shows a dielectric plate having no conductive layers thereon at the top of the stack. The dielectric cover represents the condition that the conductive layers not be shorted to external conductive material, as might happen if they were otherwise uncovered.


Alternatives to stack 33A include one or more repetitions of the sequence of plates 3300A, 3300B, 3300C, 3300B, 3300A, 3300B, 3300C, and one or more repetitions of the sequence of plates 3300A, 3300B, 3300C added to the top or the bottom of the sequence of plates 3300A, 3300B, 3300C, 3300B, 3300A, 3300B, 3300C.


Stack 33A may be assembled in a variety of external structures to provide various connections. In one assembly of stack 33A and external structure 31 of FIG. 31 results in tabs A1T2 of the A1 conductive layers in contact with the internal surface of band C4, tabs A1T1 in contact with the internal surface of band C2, tabs B1T2 in contact with the internal surface of band C6, tabs B1T1 in contact with the internal surface of band C5, tabs G1T1 in contact with the internal surface of the LS of band C1, and tabs G1T2 in contact with the internal surface of the RS of band C3.


In alternatives assemblies, stack 33A is assembled with either external structure 3A or 3G wherein the tabs of the G conductive layer contact internal surfaces of bands C2 and C4. In these alternatives, band C1 contacts to tabs at opposite ends of contact A conductive layer thereby forming two parallel conductive paths from tab A1T1 to tab A1T2; one directly between the tabs and the other through the connecting structure of band C1. Similarly, two parallel conductive paths are formed from B tabs of the same B layer by band C3.


The foregoing describe embodiments and alternatives within the scope of the novel concepts disclosed herein. The following claims define the scope of protection sought.

Claims
  • 1. A method for making an energy conditioning structure with stacked, overlapping conductive layers, said method comprising: providing a plurality of dielectric layers;providing a plurality of conductive material layers;placing a first conductive material layer of said plurality of conductive material layers upon a first dielectric layer of said plurality of dielectric layers;positioning a first electrode of said first conductive material layer in a first position upon said first dielectric layer such that a first electrode main body portion of said first conductive material layer does not extend to any one of a left side surface edge, a right side surface edge, an upper side surface edge, and a lower side surface edge of a first dielectric surface of said first dielectric layer and also that a first electrode tab of said first conductive material layer extends to at least a portion of said left side surface edge of said first dielectric layer but does not extend to said right side surface edge of said first dielectric layer;positioning a second electrode of said first conductive material layer in a second position upon said first dielectric layer such that a second electrode main body portion of said first conductive material layer does not extend to any one of said left side surface edge, said right side surface edge, said upper side surface edge, and said lower side surface edge of said first dielectric surface of said first dielectric layer and also that a second electrode tab of said first conductive material layer extends to at least a portion of said right side surface edge of said first dielectric layer but does not extend to said left side surface edge of said first dielectric layer;electrically isolating said first electrode of said first conductive material layer from said second electrode of said first conductive material layer;placing a second conductive material layer of said plurality of conductive material layers upon a second dielectric layer of said plurality of dielectric layers;positioning upon said second dielectric layer a single electrode that is contained in said second conductive material layer and contains at least two electrode tabs;placing a third conductive material layer of said plurality of conductive material layers upon a third dielectric layer of said plurality of dielectric layers;positioning a first electrode of said third conductive material layer in a first position upon said third dielectric layers such that a first electrode main body portion of said third conductive material layer does not extend to any one of a left side surface edge, a right side surface edge, a upper side surface edge, and a lower side surface edge of a first dielectric surface of said third dielectric layer and also that a first electrode tab of said third conductive material layer extends to at least a portion of said left side surface edge of said third dielectric layer but does not extend to said right side surface edge of said third dielectric layer;positioning a second electrode of said third conductive material layer in a second position upon said third dielectric layer such that a second electrode main body portion of said third conductive material layer does not extend to any one of said left side surface edge, said right side surface edge, said upper side surface edge, and said lower side surface edge of said first dielectric surface of said third dielectric layer and also that a second electrode tab of said third conductive material layers extends to at least a portion of said right side surface edge of said third dielectric layer but does not extend to said left side surface edge of said third dielectric layer;positioning a second electrode of said third conductive material layer in a second position upon said dielectric layer;electrically isolating said first electrode of said third conductive material layer from said second electrode of said third conductive material layer;electrically isolating said single electrode of said second conductive material layer from said first and second electrodes of said first conductive material layer;electrically isolating said single electrode of said second conductive material layer from said first and second electrodes of said third conductive material layer;stacking said second dielectric layer upon said first conductive material layer of said plurality of conductive material layers and a portion of said first surface of said first dielectric layer;stacking said third dielectric layer upon said second conductive material layer of said plurality of conductive material layers and a portion of said first surface of said second dielectric layer;stacking a fourth dielectric layer of said plurality of dielectric layers upon said third conductive material layer of said plurality of conductive material layers and a portion of said first surface of said third dielectric layer;stacking said second dielectric layer upon said first dielectric layer, stacking said third dielectric layer upon said second dielectric layer, and stacking said fourth dielectric layer upon said third dielectric layer;positioning a main body portion of said second electrode to completely shield said first electrode main body portion and said second electrode main body portion of said first conductive material layer from said first electrode main body potion and said second electrode main body portion of said third conductive material layer;positioning said first electrode tab of said first conductive material layer to overlap said first electrode tab of said third conductive material layer;positioning said second electrode tab of said first conductive material layer to overlap said second electrode tab of said third conductive material layer;conductively coupling said first electrode tab of said first conductive material layer to said first electrode tab of said third conductive material layer;conductively coupling said second electrode tab of said first conductive material layer to said second electrode tab of said third conductive material layer;aligning said first electrode main body portion of said first conductive material layer to overlap said second electrode main body portion of said third conductive material layer; andaligning said second electrode main body portion of said first conductive material layer to overlap said first electrode main body portion of said third conductive material layer.
CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 12/861,811, filed Aug. 23, 2010, now U.S. Pat. No. 7,974,062 which is a continuation of application Ser. No. 11/817,634, filed Aug. 31, 2007, now issued as U.S. Pat. No. 7,782,587, which is a U.S. National Stage Application of International Application PCT/US06/06607, filed Feb. 27, 2006, which claims the benefit of provisional Application No. 60/656,910, filed Mar. 1, 2005, provisional Application No. 60/661,002, filed Mar. 14, 2005, provisional Application No. 60/668,992, filed Apr. 7, 2005, provisional Application No. 60/671,107, filed Apr. 14, 2005, provisional Application No. 60/671,532, filed Apr. 15, 2005, provisional Application No. 60/674,284, filed Apr. 25, 2005, and provisional Application No. 60/751,273, filed December 19, 2005. The following applications are each incorporated by reference herein: application Ser. No. 12/861,811, filed Aug. 23, 2010, application Ser. No. 11/817,634, filed Aug. 31, 2007, International Application PCT/US06/06607, filed Feb. 27, 2006, provisional Application No. 60/656,910, filed Mar. 1, 2005, provisional Application No. 60/661,002, filed Mar. 14, 2005, provisional Application No. 60/668,992, filed Apr. 7, 2005, provisional Application No. 60/671,107, filed Apr. 14, 2005, provisional Application No. 60/671,532, filed Apr. 15, 2005, provisional Application No. 60/674,284, filed Apr. 25, 2005, and provisional Application No. 60/751,273, filed Dec. 19, 2005.

US Referenced Citations (922)
Number Name Date Kind
676185 Gattinger Jun 1901 A
3104363 Butler Sep 1963 A
3240621 Flower, Jr. et al. Mar 1966 A
3273027 Bourgault et al. Sep 1966 A
3343034 Ovshinsky Sep 1967 A
3379943 Breedlove Apr 1968 A
3381244 Dalley Apr 1968 A
3488528 Emond Jan 1970 A
3496434 Prokopowicz Feb 1970 A
3519959 Bewley et al. Jul 1970 A
3534301 Golembeski Oct 1970 A
3568000 Martre et al. Mar 1971 A
3573677 Detar Apr 1971 A
3652941 Neuf Mar 1972 A
3680005 Bewley et al. Jul 1972 A
3681612 Vogl Aug 1972 A
3688361 Bonini Sep 1972 A
3691563 Shelton Sep 1972 A
3701958 Herbert Oct 1972 A
3736471 Donze et al. May 1973 A
3740678 Hill Jun 1973 A
3742420 Harnden, Jr. Jun 1973 A
3764727 Balde Oct 1973 A
3790858 Brancaleone et al. Feb 1974 A
3842374 Schlicke Oct 1974 A
3880493 Lockhart, Jr. Apr 1975 A
3896354 Coleman et al. Jul 1975 A
3898541 Weller Aug 1975 A
3921041 Stockman Nov 1975 A
4023071 Fussell May 1977 A
4030190 Varker Jun 1977 A
4071878 Stynes Jan 1978 A
4081770 Mayer Mar 1978 A
4119084 Eckels Oct 1978 A
4135132 Tafjord Jan 1979 A
4139783 Engeler Feb 1979 A
4148003 Colburn et al. Apr 1979 A
4160220 Stachejko Jul 1979 A
4191986 ta Huang et al. Mar 1980 A
4198613 Whitley Apr 1980 A
4237522 Thompson Dec 1980 A
4259604 Aoki Mar 1981 A
4262317 Baumbach Apr 1981 A
4275945 Krantz et al. Jun 1981 A
4290041 Utsumi et al. Sep 1981 A
4292558 Flick et al. Sep 1981 A
4308509 Tsuchiya et al. Dec 1981 A
4312023 Frappart et al. Jan 1982 A
4312026 Iwaya et al. Jan 1982 A
4320364 Sakamoto et al. Mar 1982 A
4322698 Takahashi et al. Mar 1982 A
4328530 Bajorek et al. May 1982 A
4328531 Nagashima et al. May 1982 A
4335417 Sakshaug et al. Jun 1982 A
4342143 Jennings Aug 1982 A
4349862 Bajorek et al. Sep 1982 A
4353040 Krumm et al. Oct 1982 A
4353044 Nossek Oct 1982 A
4366456 Ueno et al. Dec 1982 A
4374368 Viola et al. Feb 1983 A
4375053 Viola et al. Feb 1983 A
4384263 Neuman et al. May 1983 A
4394639 McGalliard Jul 1983 A
4412146 Futterer et al. Oct 1983 A
4424552 Saint Marcoux Jan 1984 A
4441088 Anderson Apr 1984 A
4494083 Josefsson et al. Jan 1985 A
4494092 Griffin et al. Jan 1985 A
4498122 Rainal Feb 1985 A
4533931 Mandai et al. Aug 1985 A
4541035 Carlson et al. Sep 1985 A
4551746 Gilbert et al. Nov 1985 A
4551747 Gilbert et al. Nov 1985 A
4553114 English et al. Nov 1985 A
4556929 Tanaka et al. Dec 1985 A
4560962 Barrow Dec 1985 A
4563659 Sakamoto Jan 1986 A
4577214 Schaper Mar 1986 A
4586104 Standler Apr 1986 A
4587589 Marek May 1986 A
4590537 Sakamoto May 1986 A
4592606 Mudra Jun 1986 A
4597029 Kucharek et al. Jun 1986 A
4612140 Mandai Sep 1986 A
4612497 Ulmer Sep 1986 A
4626958 Lockard et al. Dec 1986 A
4628411 Balderes et al. Dec 1986 A
4633368 Frederick Dec 1986 A
4636752 Saito Jan 1987 A
4639826 Val et al. Jan 1987 A
4654694 Val Mar 1987 A
4658334 McSparran et al. Apr 1987 A
4665465 Tanabe May 1987 A
4667267 Hernandez et al. May 1987 A
4675644 Ott et al. Jun 1987 A
4682129 Bakermans et al. Jul 1987 A
4685025 Carlomagno Aug 1987 A
4688151 Kraus et al. Aug 1987 A
4694265 Kupper Sep 1987 A
4698721 Warren Oct 1987 A
4703386 Speet et al. Oct 1987 A
4706162 Hernandez et al. Nov 1987 A
4707671 Suzuki et al. Nov 1987 A
4710854 Yamada et al. Dec 1987 A
4712062 Takamine Dec 1987 A
4712540 Tucker et al. Dec 1987 A
4713540 Gilby et al. Dec 1987 A
4720690 Popek et al. Jan 1988 A
4720760 Starr Jan 1988 A
4725878 Miyauchi et al. Feb 1988 A
4729058 Gupta et al. Mar 1988 A
4734818 Hernandez et al. Mar 1988 A
4734819 Hernandez et al. Mar 1988 A
4739448 Rowe et al. Apr 1988 A
4746557 Sakamoto et al. May 1988 A
4752752 Okubo Jun 1988 A
4755910 Val Jul 1988 A
4760485 Ari et al. Jul 1988 A
4772225 Ulery Sep 1988 A
4777460 Okubo Oct 1988 A
4780598 Fahey et al. Oct 1988 A
4782311 Ookubo Nov 1988 A
4785135 Ecker et al. Nov 1988 A
4785271 Higgins Nov 1988 A
4789847 Sakamoto et al. Dec 1988 A
4793058 Venaleck Dec 1988 A
4794485 Bennett Dec 1988 A
4794499 Ott Dec 1988 A
4795658 Kano et al. Jan 1989 A
4799070 Nishikawa Jan 1989 A
4799128 Chen Jan 1989 A
4801904 Sakamoto et al. Jan 1989 A
4814295 Mehta Mar 1989 A
4814938 Arakawa et al. Mar 1989 A
4814941 Speet et al. Mar 1989 A
4819126 Kornrumpf et al. Apr 1989 A
4827327 Miyauchi et al. May 1989 A
4845606 Herbert Jul 1989 A
4847730 Konno et al. Jul 1989 A
4856102 Insetta et al. Aug 1989 A
4864465 Robbins Sep 1989 A
4875087 Miyauchi et al. Oct 1989 A
4884170 Ohki et al. Nov 1989 A
4891616 Renken et al. Jan 1990 A
4891686 Krausse Jan 1990 A
4901039 Corzine et al. Feb 1990 A
4904967 Morii et al. Feb 1990 A
4908586 Kling et al. Mar 1990 A
4908590 Sakamoto et al. Mar 1990 A
4909909 Florjancic et al. Mar 1990 A
4916576 Herbert et al. Apr 1990 A
4924340 Sweet May 1990 A
4942353 Herbert et al. Jul 1990 A
4945399 Brown et al. Jul 1990 A
4947286 Kaneko et al. Aug 1990 A
4949217 Ngo Aug 1990 A
4954929 Baran Sep 1990 A
4967315 Schelhorn Oct 1990 A
4975761 Chu Dec 1990 A
4978906 Herbert et al. Dec 1990 A
4982311 Dehaine et al. Jan 1991 A
4989117 Hernandez Jan 1991 A
4990202 Murata et al. Feb 1991 A
4994936 Hernandez Feb 1991 A
4999595 Azumi et al. Mar 1991 A
5012386 McShane et al. Apr 1991 A
5018047 Insetta et al. May 1991 A
5027253 Lauffer et al. Jun 1991 A
5029062 Capel Jul 1991 A
5034709 Azumi et al. Jul 1991 A
5034710 Kawaguchi Jul 1991 A
5034850 Hernandez et al. Jul 1991 A
5034851 Monsorno et al. Jul 1991 A
5040092 Katho et al. Aug 1991 A
5040093 Greuel Aug 1991 A
5041899 Oku et al. Aug 1991 A
5051712 Naito et al. Sep 1991 A
5059140 Philippson et al. Oct 1991 A
5065284 Hernandez Nov 1991 A
5073523 Yamada et al. Dec 1991 A
5075665 Taira et al. Dec 1991 A
5079069 Howard et al. Jan 1992 A
5079223 Maroni Jan 1992 A
5079669 Williams Jan 1992 A
5083101 Frederick Jan 1992 A
5089688 Fang et al. Feb 1992 A
5089880 Meyer et al. Feb 1992 A
5089881 Panicker Feb 1992 A
5095402 Hernandez et al. Mar 1992 A
5099387 Kato et al. Mar 1992 A
5105333 Yamano et al. Apr 1992 A
5107394 Naito et al. Apr 1992 A
5109206 Carlile Apr 1992 A
5115221 Cowman May 1992 A
5119062 Nakamura et al. Jun 1992 A
5140297 Jacobs et al. Aug 1992 A
5140496 Heinks et al. Aug 1992 A
5140497 Kato et al. Aug 1992 A
5142352 Chambers et al. Aug 1992 A
5142430 Anthony Aug 1992 A
5146191 Mandai et al. Sep 1992 A
5148005 Fang et al. Sep 1992 A
5150088 Virga et al. Sep 1992 A
5151770 Inoue Sep 1992 A
5153379 Guzuk et al. Oct 1992 A
5155464 Cowman et al. Oct 1992 A
5155655 Howard et al. Oct 1992 A
5159750 Dutta et al. Nov 1992 A
5161086 Howard et al. Nov 1992 A
5162977 Paurus et al. Nov 1992 A
5165055 Metsler Nov 1992 A
5166772 Soldner et al. Nov 1992 A
5167483 Gardiner Dec 1992 A
5170317 Yamada et al. Dec 1992 A
5172299 Yamada et al. Dec 1992 A
5173670 Naito et al. Dec 1992 A
5173767 Lange et al. Dec 1992 A
5177594 Chance et al. Jan 1993 A
5177663 Ingleson et al. Jan 1993 A
5177670 Shinohara et al. Jan 1993 A
5179362 Okochi et al. Jan 1993 A
5181859 Foreman et al. Jan 1993 A
5184210 Westbrook Feb 1993 A
5186647 Denkmann et al. Feb 1993 A
5187455 Mandai et al. Feb 1993 A
5206786 Lee Apr 1993 A
5208502 Yamashita et al. May 1993 A
5212402 Higgins, III May 1993 A
5216278 Lin et al. Jun 1993 A
5218230 Tamamura et al. Jun 1993 A
5219812 Doi et al. Jun 1993 A
5220480 Kershaw, Jr. et al. Jun 1993 A
5220483 Scott Jun 1993 A
5223741 Bechtel et al. Jun 1993 A
5225709 Nishiuma et al. Jul 1993 A
5227951 deNeuf et al. Jul 1993 A
5235208 Katoh Aug 1993 A
5236376 Cohen Aug 1993 A
5237204 Val Aug 1993 A
5243308 Shusterman et al. Sep 1993 A
5251092 Brady et al. Oct 1993 A
5257950 Lenker et al. Nov 1993 A
5261153 Lucas Nov 1993 A
5262611 Danysh et al. Nov 1993 A
5264983 Petrinec Nov 1993 A
5268810 DiMarco et al. Dec 1993 A
5272590 Hernandez Dec 1993 A
5278524 Mullen Jan 1994 A
5283717 Hundt Feb 1994 A
5290191 Foreman et al. Mar 1994 A
5294751 Kamada Mar 1994 A
5294826 Marcantonio et al. Mar 1994 A
5299956 Brownell et al. Apr 1994 A
5300760 Batliwalla et al. Apr 1994 A
5303419 Ittipiboon et al. Apr 1994 A
5309024 Hirano May 1994 A
5309121 Kobayashi et al. May 1994 A
5310363 Brownell et al. May 1994 A
5311408 Ferchau et al. May 1994 A
5313176 Upadhyay May 1994 A
5319525 Lightfoot Jun 1994 A
5321373 Shusterman et al. Jun 1994 A
5321573 Person et al. Jun 1994 A
5326284 Bohbot et al. Jul 1994 A
5331505 Wilheim Jul 1994 A
5333095 Stevenson et al. Jul 1994 A
5337028 White Aug 1994 A
5338970 Boyle et al. Aug 1994 A
5349314 Shimizu et al. Sep 1994 A
5353189 Tomlinson Oct 1994 A
5353202 Ansell et al. Oct 1994 A
5355016 Swirbel et al. Oct 1994 A
5357568 Pelegris Oct 1994 A
5362249 Carter Nov 1994 A
5362254 Siemon et al. Nov 1994 A
5365203 Nakamura et al. Nov 1994 A
5367430 DeVoe et al. Nov 1994 A
5369379 Fujiki Nov 1994 A
5369390 Lin et al. Nov 1994 A
5369545 Bhattacharyya et al. Nov 1994 A
5371653 Kametani et al. Dec 1994 A
5374909 Hirai et al. Dec 1994 A
5376759 Marx et al. Dec 1994 A
5378407 Chandler et al. Jan 1995 A
5382928 Davis et al. Jan 1995 A
5382938 Hansson et al. Jan 1995 A
5386335 Amano et al. Jan 1995 A
5386627 Booth et al. Feb 1995 A
5396201 Ishizaki et al. Mar 1995 A
5396397 McClanahan et al. Mar 1995 A
5399898 Rostoker Mar 1995 A
5401952 Sugawa Mar 1995 A
5402318 Otsuka et al. Mar 1995 A
5404044 Booth et al. Apr 1995 A
5405466 Naito et al. Apr 1995 A
5414299 Wang et al. May 1995 A
5414393 Rose et al. May 1995 A
5414587 Kiser et al. May 1995 A
5420553 Sakamoto et al. May 1995 A
5426560 Amaya et al. Jun 1995 A
5428885 Takaya et al. Jul 1995 A
5430605 deNeuf et al. Jul 1995 A
5432484 Klas et al. Jul 1995 A
5446625 Urbish et al. Aug 1995 A
5448445 Yamate et al. Sep 1995 A
5450278 Lee et al. Sep 1995 A
5451919 Chu et al. Sep 1995 A
RE35064 Hernandez Oct 1995 E
5455734 Foreman et al. Oct 1995 A
5457340 Templeton et al. Oct 1995 A
5461351 Shusterman Oct 1995 A
5463232 Yamashita et al. Oct 1995 A
5467064 Gu Nov 1995 A
5468997 Imai et al. Nov 1995 A
5471027 Call et al. Nov 1995 A
5471035 Holmes Nov 1995 A
5471181 Park Nov 1995 A
5473813 Chobot et al. Dec 1995 A
5474458 Vafi et al. Dec 1995 A
5475262 Wang et al. Dec 1995 A
5475565 Bhattacharyya et al. Dec 1995 A
5475606 Muyshondt et al. Dec 1995 A
5477933 Nguyen Dec 1995 A
5481238 Carsten et al. Jan 1996 A
5483407 Anastasio et al. Jan 1996 A
5483413 Babb Jan 1996 A
5488540 Hatta Jan 1996 A
5489882 Ueno Feb 1996 A
5491299 Naylor et al. Feb 1996 A
5491301 Akiba et al. Feb 1996 A
5493259 Blalock et al. Feb 1996 A
5493260 Park Feb 1996 A
5495180 Huang et al. Feb 1996 A
5499445 Boyle et al. Mar 1996 A
5500629 Meyer Mar 1996 A
5500785 Funada Mar 1996 A
5500789 Miller et al. Mar 1996 A
5506755 Miyagi et al. Apr 1996 A
5508938 Wheeler Apr 1996 A
5512196 Mantese et al. Apr 1996 A
5519650 Ichimura et al. May 1996 A
5528083 Malladi et al. Jun 1996 A
5530288 Stone Jun 1996 A
5531003 Seifried et al. Jul 1996 A
5534837 Brandt Jul 1996 A
5535101 Miles et al. Jul 1996 A
5536978 Cooper et al. Jul 1996 A
5541482 Siao Jul 1996 A
5544002 Iwaya et al. Aug 1996 A
5546058 Azuma et al. Aug 1996 A
5548255 Spielman Aug 1996 A
5555150 Newman, Jr. Sep 1996 A
5556811 Agatstein et al. Sep 1996 A
5557142 Gilmore et al. Sep 1996 A
5566040 Cosquer et al. Oct 1996 A
5568348 Foreman et al. Oct 1996 A
5570278 Cross Oct 1996 A
5574630 Kresge et al. Nov 1996 A
5583359 Ng et al. Dec 1996 A
5583470 Okubo Dec 1996 A
5583738 Kohno et al. Dec 1996 A
5583739 Vu et al. Dec 1996 A
5586007 Funada Dec 1996 A
5586011 Alexander Dec 1996 A
5587333 Johansson et al. Dec 1996 A
5587920 Muyshondt et al. Dec 1996 A
5590016 Fujishiro Dec 1996 A
5590030 Kametani et al. Dec 1996 A
5592391 Muyshondt et al. Jan 1997 A
5604668 Wohrstein et al. Feb 1997 A
5610796 Lavene Mar 1997 A
5612657 Kledzik Mar 1997 A
5614111 Lavene Mar 1997 A
5614881 Duggal et al. Mar 1997 A
5618185 Aekins Apr 1997 A
5619079 Wiggins et al. Apr 1997 A
5623160 Liberkowski Apr 1997 A
5624592 Paustian Apr 1997 A
5625166 Natarajan Apr 1997 A
5625225 Huang et al. Apr 1997 A
5633479 Hirano May 1997 A
5634268 Dalal et al. Jun 1997 A
5635669 Kubota et al. Jun 1997 A
5635767 Wenzel et al. Jun 1997 A
5635775 Colburn et al. Jun 1997 A
5640048 Selna Jun 1997 A
5641988 Huang et al. Jun 1997 A
5644468 Wink et al. Jul 1997 A
5645746 Walsh Jul 1997 A
5647766 Nguyen Jul 1997 A
5647767 Scheer et al. Jul 1997 A
5659455 Herbert Aug 1997 A
5668511 Furutani et al. Sep 1997 A
5672911 Patil et al. Sep 1997 A
5682303 Goad Oct 1997 A
5692298 Goetz et al. Dec 1997 A
5700167 Pharney et al. Dec 1997 A
5708296 Bhansali Jan 1998 A
5708553 Hung Jan 1998 A
5717249 Yoshikawa et al. Feb 1998 A
5719440 Moden Feb 1998 A
5719450 Vora Feb 1998 A
5719477 Tomihari Feb 1998 A
5719750 Iwane Feb 1998 A
5726612 Mandai et al. Mar 1998 A
5731960 Fung Mar 1998 A
5734198 Stave Mar 1998 A
5741729 Selna Apr 1998 A
5742210 Chaturvedi et al. Apr 1998 A
5742470 Raets Apr 1998 A
5745333 Frankeny et al. Apr 1998 A
5751539 Stevenson et al. May 1998 A
5756380 Berg et al. May 1998 A
5757252 Cho et al. May 1998 A
5761049 Yoshidome et al. Jun 1998 A
5764489 Leigh et al. Jun 1998 A
5767446 Ha et al. Jun 1998 A
5770476 Stone Jun 1998 A
5777383 Stager et al. Jul 1998 A
5786238 Pai et al. Jul 1998 A
5786630 Bhansali et al. Jul 1998 A
5789999 Barnett et al. Aug 1998 A
5790368 Naito et al. Aug 1998 A
5796170 Marcantonio Aug 1998 A
5796568 Baiatu Aug 1998 A
5796595 Cross Aug 1998 A
5797770 Davis et al. Aug 1998 A
5801579 Le et al. Sep 1998 A
5801597 Carter et al. Sep 1998 A
5808873 Celaya et al. Sep 1998 A
5812380 Frech et al. Sep 1998 A
5815050 Brooks et al. Sep 1998 A
5815051 Hamasaki et al. Sep 1998 A
5815373 Johnsen et al. Sep 1998 A
5817130 Cox et al. Oct 1998 A
5818313 Estes et al. Oct 1998 A
5822174 Yamate et al. Oct 1998 A
5825084 Lau et al. Oct 1998 A
5825628 Garbelli et al. Oct 1998 A
5827382 Ogawa et al. Oct 1998 A
5828093 Naito et al. Oct 1998 A
5828272 Romerein et al. Oct 1998 A
5828555 Itoh Oct 1998 A
5831489 Wire Nov 1998 A
5834992 Kato et al. Nov 1998 A
5835338 Suzuki et al. Nov 1998 A
5838216 White et al. Nov 1998 A
5838551 Chan Nov 1998 A
5847936 Forehand et al. Dec 1998 A
5854534 Beilin et al. Dec 1998 A
5864089 Rainal Jan 1999 A
5867361 Wolf et al. Feb 1999 A
5870272 Seifried et al. Feb 1999 A
5870273 Sogabe et al. Feb 1999 A
5872695 Fasano et al. Feb 1999 A
5875099 Maesaka et al. Feb 1999 A
5880925 DuPre et al. Mar 1999 A
5889445 Ritter et al. Mar 1999 A
5892415 Okamura Apr 1999 A
5894252 Oida Apr 1999 A
5895990 Lau Apr 1999 A
5898403 Saitoh et al. Apr 1999 A
5898562 Cain et al. Apr 1999 A
5898576 Lockwood et al. Apr 1999 A
5900350 Provost et al. May 1999 A
5905627 Brendel et al. May 1999 A
5907265 Sakuragawa et al. May 1999 A
5908151 Elias Jun 1999 A
5909155 Anderson et al. Jun 1999 A
5909350 Anthony Jun 1999 A
5910755 Mishiro et al. Jun 1999 A
5910879 Herbert Jun 1999 A
5912809 Steigerwald et al. Jun 1999 A
5917388 Tronche et al. Jun 1999 A
5923523 Herbert Jul 1999 A
5923540 Asada et al. Jul 1999 A
5925925 Dehaine et al. Jul 1999 A
5926377 Nakao et al. Jul 1999 A
5928076 Clements et al. Jul 1999 A
5929729 Swarup Jul 1999 A
5955930 Anderson et al. Sep 1999 A
5959829 Stevenson et al. Sep 1999 A
5959846 Noguchi et al. Sep 1999 A
5969461 Anderson et al. Oct 1999 A
5969583 Hutchinson Oct 1999 A
5973906 Stevenson et al. Oct 1999 A
5973928 Blasi et al. Oct 1999 A
5977845 Kitahara Nov 1999 A
5978231 Tohya et al. Nov 1999 A
5980718 Van Konynenburg et al. Nov 1999 A
5982018 Wark et al. Nov 1999 A
5986340 Mostafazadeh et al. Nov 1999 A
5995352 Gumley Nov 1999 A
5995591 Halim Nov 1999 A
5999067 D'Ostilio Dec 1999 A
5999398 Makl et al. Dec 1999 A
6004752 Loewy et al. Dec 1999 A
6013957 Puzo et al. Jan 2000 A
6016095 Herbert Jan 2000 A
6018448 Anthony Jan 2000 A
6021564 Hanson Feb 2000 A
6023210 Tulintseff Feb 2000 A
6023406 Kinoshita et al. Feb 2000 A
6031710 Wolf et al. Feb 2000 A
6034576 Kuth Mar 2000 A
6034864 Naito et al. Mar 2000 A
6037846 Oberhammer Mar 2000 A
6038121 Naito et al. Mar 2000 A
6042685 Shinada et al. Mar 2000 A
6046898 Seymour et al. Apr 2000 A
6052038 Savicki Apr 2000 A
6052272 Kuroda et al. Apr 2000 A
6054754 Bissey Apr 2000 A
6054758 Lamson Apr 2000 A
6061227 Nogi May 2000 A
6061228 Palmer et al. May 2000 A
6064286 Ziegner et al. May 2000 A
6069786 Horie et al. May 2000 A
6072687 Naito et al. Jun 2000 A
6072690 Farooq et al. Jun 2000 A
6075211 Tohya et al. Jun 2000 A
6075285 Taylor et al. Jun 2000 A
6078117 Perrin et al. Jun 2000 A
6078229 Funada et al. Jun 2000 A
6084779 Fang Jul 2000 A
6088235 Chiao et al. Jul 2000 A
6091310 Utsumi et al. Jul 2000 A
6092269 Yializis et al. Jul 2000 A
6094112 Goldberger et al. Jul 2000 A
6094339 Evans Jul 2000 A
6097260 Whybrew et al. Aug 2000 A
6097581 Anthony Aug 2000 A
6104258 Novak Aug 2000 A
6104599 Ahiko et al. Aug 2000 A
6108448 Song et al. Aug 2000 A
6111479 Myohga et al. Aug 2000 A
6120326 Brooks Sep 2000 A
6121761 Herbert Sep 2000 A
6125044 Cherniski et al. Sep 2000 A
6130585 Whybrew et al. Oct 2000 A
6133805 Jain et al. Oct 2000 A
6137161 Gilliland et al. Oct 2000 A
6137392 Herbert Oct 2000 A
6142831 Ashman et al. Nov 2000 A
6144547 Retseptor Nov 2000 A
6147587 Hadano et al. Nov 2000 A
6150895 Steigerwald et al. Nov 2000 A
6157528 Anthony Dec 2000 A
6157547 Brown et al. Dec 2000 A
6160705 Stearns et al. Dec 2000 A
6163454 Strickler Dec 2000 A
6163456 Suzuki et al. Dec 2000 A
6165814 Wark et al. Dec 2000 A
6175287 Lampen et al. Jan 2001 B1
6180588 Walters Jan 2001 B1
6181004 Koontz et al. Jan 2001 B1
6181231 Bartilson Jan 2001 B1
6183685 Cowman et al. Feb 2001 B1
6184477 Tanahashi Feb 2001 B1
6184769 Nakamura et al. Feb 2001 B1
6185091 Tanahashi et al. Feb 2001 B1
6188565 Naito et al. Feb 2001 B1
6191472 Mazumder Feb 2001 B1
6191475 Skinner et al. Feb 2001 B1
6191479 Herrell et al. Feb 2001 B1
6191669 Shigemura Feb 2001 B1
6191932 Kuroda et al. Feb 2001 B1
6191933 Ishigaki et al. Feb 2001 B1
6195269 Hino Feb 2001 B1
6198123 Linder et al. Mar 2001 B1
6198362 Harada et al. Mar 2001 B1
6200400 Farooq et al. Mar 2001 B1
6204448 Garland et al. Mar 2001 B1
6205014 Inomata et al. Mar 2001 B1
6207081 Sasaki et al. Mar 2001 B1
6208063 Horikawa Mar 2001 B1
6208225 Miller Mar 2001 B1
6208226 Chen et al. Mar 2001 B1
6208494 Nakura et al. Mar 2001 B1
6208495 Wieloch et al. Mar 2001 B1
6208501 Ingalls et al. Mar 2001 B1
6208502 Hudis et al. Mar 2001 B1
6208503 Shimada et al. Mar 2001 B1
6208521 Nakatsuka Mar 2001 B1
6208525 Imasu et al. Mar 2001 B1
6211754 Nishida et al. Apr 2001 B1
6212060 Liu Apr 2001 B1
6212078 Hunt et al. Apr 2001 B1
6215373 Novak et al. Apr 2001 B1
6215647 Naito et al. Apr 2001 B1
6215649 Appelt et al. Apr 2001 B1
6218631 Hetzel et al. Apr 2001 B1
6219240 Sasov Apr 2001 B1
6222427 Kato et al. Apr 2001 B1
6222431 Ishizaki et al. Apr 2001 B1
6225876 Akino et al. May 2001 B1
6226169 Naito et al. May 2001 B1
6226182 Maehara May 2001 B1
6229226 Kramer et al. May 2001 B1
6236572 Teshome et al. May 2001 B1
6240621 Nellissen et al. Jun 2001 B1
6243253 DuPre et al. Jun 2001 B1
6249047 Corisis Jun 2001 B1
6249439 DeMore et al. Jun 2001 B1
6252161 Hailey et al. Jun 2001 B1
6252761 Branchevsky Jun 2001 B1
6262895 Forthun Jul 2001 B1
6266228 Naito et al. Jul 2001 B1
6266229 Naito et al. Jul 2001 B1
6272003 Schaper Aug 2001 B1
6281704 Ngai et al. Aug 2001 B2
6282074 Anthony Aug 2001 B1
6282079 Nagakari et al. Aug 2001 B1
6285109 Katagiri et al. Sep 2001 B1
6285542 Kennedy, III et al. Sep 2001 B1
6288344 Youker et al. Sep 2001 B1
6288906 Sprietsma et al. Sep 2001 B1
6292350 Naito et al. Sep 2001 B1
6292351 Ahiko et al. Sep 2001 B1
6300846 Brunker Oct 2001 B1
6307450 Takahashi et al. Oct 2001 B2
6309245 Sweeney Oct 2001 B1
6310286 Troxel et al. Oct 2001 B1
6310759 Ishigaki et al. Oct 2001 B2
6313584 Johnson et al. Nov 2001 B1
6320547 Fathy et al. Nov 2001 B1
6323116 Lamson Nov 2001 B1
6324047 Hayworth Nov 2001 B1
6324048 Liu Nov 2001 B1
6325672 Belopolsky et al. Dec 2001 B1
6327134 Kuroda et al. Dec 2001 B1
6327137 Yamamoto et al. Dec 2001 B1
6331808 Mikami et al. Dec 2001 B2
6331926 Anthony Dec 2001 B1
6331930 Kuroda et al. Dec 2001 B1
6342681 Goldberger et al. Jan 2002 B1
6344961 Naito et al. Feb 2002 B1
6346743 Figueroa et al. Feb 2002 B1
6351120 Goldfine et al. Feb 2002 B2
6351194 Takahashi et al. Feb 2002 B2
6351369 Kuroda et al. Feb 2002 B1
6352914 Ball et al. Mar 2002 B2
6353375 Kurata Mar 2002 B2
6353540 Akiba et al. Mar 2002 B1
6365828 Kinoshita et al. Apr 2002 B1
6367133 Ikada et al. Apr 2002 B2
6370010 Kuroda et al. Apr 2002 B1
6370011 Naito et al. Apr 2002 B1
6370937 Hsu Apr 2002 B2
6373349 Gilbert Apr 2002 B2
6373673 Anthony Apr 2002 B1
6373711 Yamauchi et al. Apr 2002 B2
6377439 Sekidou et al. Apr 2002 B1
6381153 Brussels Apr 2002 B1
6388207 Figueroa et al. May 2002 B1
6388856 Anthony May 2002 B1
6388865 Honda et al. May 2002 B1
6392502 Sweeney et al. May 2002 B2
6392868 Ohya et al. May 2002 B2
6395996 Tsai et al. May 2002 B1
6396088 Kitsukawa et al. May 2002 B2
6407906 Ahiko et al. Jun 2002 B1
6414572 Satoh et al. Jul 2002 B2
6420941 Okada et al. Jul 2002 B2
6430025 Naito et al. Aug 2002 B2
6430030 Farooq et al. Aug 2002 B1
6437240 Smith Aug 2002 B2
6437409 Fujii Aug 2002 B2
6448873 Mostov Sep 2002 B1
6449828 Pahl et al. Sep 2002 B2
6456481 Stevenson Sep 2002 B1
6462628 Kondo et al. Oct 2002 B2
6462932 Naito et al. Oct 2002 B1
6466107 Yamamoto Oct 2002 B2
6469595 Anthony et al. Oct 2002 B2
6473292 Yoshida et al. Oct 2002 B1
6475854 Narwankar et al. Nov 2002 B2
6477034 Chakravorty et al. Nov 2002 B1
6480425 Yanagisawa et al. Nov 2002 B2
6483394 Kim Nov 2002 B2
6493202 Kappel et al. Dec 2002 B2
6496354 Naito et al. Dec 2002 B2
6498710 Anthony Dec 2002 B1
6501344 Ikata et al. Dec 2002 B2
6504451 Yamaguchi Jan 2003 B1
6507200 Brandelik et al. Jan 2003 B2
6509640 Li et al. Jan 2003 B1
6509807 Anthony et al. Jan 2003 B1
6510038 Satou et al. Jan 2003 B1
6522182 Tomita et al. Feb 2003 B2
6522516 Anthony Feb 2003 B2
6525628 Ritter et al. Feb 2003 B1
6525635 Murata et al. Feb 2003 B2
6532143 Figueroa et al. Mar 2003 B2
6534787 Hsu Mar 2003 B1
6538527 Hidaka Mar 2003 B2
6549389 Anthony et al. Apr 2003 B2
6549395 Naito et al. Apr 2003 B1
6559484 Li et al. May 2003 B1
6563688 Anthony et al. May 2003 B2
6567257 Brown May 2003 B2
6573805 Hidaka et al. Jun 2003 B2
6577493 Honda et al. Jun 2003 B2
6580595 Anthony et al. Jun 2003 B2
6587016 Kadota Jul 2003 B2
6587327 Devoe et al. Jul 2003 B1
6594128 Anthony Jul 2003 B2
6594136 Kuroda et al. Jul 2003 B2
6603372 Ishizaki et al. Aug 2003 B1
6603646 Anthony et al. Aug 2003 B2
6606011 Anthony et al. Aug 2003 B2
6606237 Naito et al. Aug 2003 B1
6608538 Wang Aug 2003 B2
6611419 Chakavorty Aug 2003 B1
6618268 Dibene, II et al. Sep 2003 B2
6618943 Ashe et al. Sep 2003 B2
6624692 Suzuki et al. Sep 2003 B2
6633528 Watanabe Oct 2003 B2
6636406 Anthony Oct 2003 B1
6638686 Sawada et al. Oct 2003 B2
6643903 Stevenson et al. Nov 2003 B2
6650203 Gerstenberg et al. Nov 2003 B2
6650525 Anthony Nov 2003 B2
6665053 Korenaga Dec 2003 B2
6674343 Gould et al. Jan 2004 B2
6687108 Anthony et al. Feb 2004 B1
6696952 Zirbes Feb 2004 B2
6700181 Coccioli Mar 2004 B1
6704190 Honda et al. Mar 2004 B2
6707685 Kabumoto et al. Mar 2004 B2
6710263 Kobayashi et al. Mar 2004 B2
6710997 Honda et al. Mar 2004 B2
6717301 De Daran et al. Apr 2004 B2
6738249 Anthony et al. May 2004 B1
6750739 Enokihara et al. Jun 2004 B2
6767787 Koh et al. Jul 2004 B2
6768630 Togashi Jul 2004 B2
6794961 Nagaishi et al. Sep 2004 B2
6801422 Mosley Oct 2004 B2
6806806 Anthony Oct 2004 B2
6812411 Belau et al. Nov 2004 B2
6823730 Buck et al. Nov 2004 B2
6828666 Herrell et al. Dec 2004 B1
6849945 Horiuchi et al. Feb 2005 B2
6872513 Meagley Mar 2005 B2
6873513 Anthony Mar 2005 B2
6879481 Honda et al. Apr 2005 B2
6894884 Anthony, Jr. et al. May 2005 B2
6909593 Kuroda et al. Jun 2005 B2
6942469 Seale et al. Sep 2005 B2
6950293 Anthony Sep 2005 B2
6954346 Anthony Oct 2005 B2
6956174 Khandros et al. Oct 2005 B2
6980414 Sutardja Dec 2005 B1
6995983 Anthony et al. Feb 2006 B1
7042303 Anthony et al. May 2006 B2
7042703 Anthony et al. May 2006 B2
7050284 Anthony May 2006 B2
7106570 Anthony, Jr. et al. Sep 2006 B2
7109569 Breisch et al. Sep 2006 B2
7110227 Anthony et al. Sep 2006 B2
7110235 Anthony, Jr. et al. Sep 2006 B2
7113383 Anthony et al. Sep 2006 B2
7141899 Anthony et al. Nov 2006 B2
7180718 Anthony et al. Feb 2007 B2
7193831 Anthony Mar 2007 B2
7224564 Anthony May 2007 B2
7262949 Anthony Aug 2007 B2
7274549 Anthony Sep 2007 B2
7301748 Anthony et al. Nov 2007 B2
7321485 Anthony et al. Jan 2008 B2
7336467 Anthony et al. Feb 2008 B2
7336468 Anthony et al. Feb 2008 B2
7423860 Anthony et al. Sep 2008 B2
7428134 Anthony Sep 2008 B2
7433168 Anthony Oct 2008 B2
7440252 Anthony Oct 2008 B2
7443647 Anthony Oct 2008 B2
7586728 Anthony Sep 2009 B2
7593208 Anthony et al. Sep 2009 B2
7609500 Anthony et al. Oct 2009 B2
7609501 Anthony et al. Oct 2009 B2
7630188 Anthony Dec 2009 B2
7675729 Anthony et al. Mar 2010 B2
7688565 Anthony et al. Mar 2010 B2
7733621 Anthony et al. Jun 2010 B2
7768763 Anthony et al. Aug 2010 B2
7782587 Anthony et al. Aug 2010 B2
7817397 Anthony Oct 2010 B2
7894176 Anthony Feb 2011 B1
7916444 Anthony et al. Mar 2011 B2
7920367 Anthony et al. Apr 2011 B2
7974062 Anthony et al. Jul 2011 B2
8004812 Anthony et al. Aug 2011 B2
8014119 Anthony Sep 2011 B2
8018706 Anthony et al. Sep 2011 B2
8023241 Anthony et al. Sep 2011 B2
8026777 Anthony Sep 2011 B2
20010001989 Smith May 2001 A1
20010002105 Brandelik et al. May 2001 A1
20010002624 Khandros et al. Jun 2001 A1
20010008288 Kimura et al. Jul 2001 A1
20010008302 Murakami et al. Jul 2001 A1
20010008478 McIntosh et al. Jul 2001 A1
20010008509 Watanabe Jul 2001 A1
20010009496 Kappel et al. Jul 2001 A1
20010010444 Pahl et al. Aug 2001 A1
20010011763 Ushijima et al. Aug 2001 A1
20010011934 Yamamoto Aug 2001 A1
20010011937 Satoh et al. Aug 2001 A1
20010013626 Fujii Aug 2001 A1
20010015643 Goldfine et al. Aug 2001 A1
20010015683 Mikami et al. Aug 2001 A1
20010017576 Kondo et al. Aug 2001 A1
20010017579 Kurata Aug 2001 A1
20010019869 Hsu Sep 2001 A1
20010020879 Takahashi et al. Sep 2001 A1
20010021097 Ohya et al. Sep 2001 A1
20010022547 Murata et al. Sep 2001 A1
20010023983 Kobayashi et al. Sep 2001 A1
20010024148 Gerstenberg et al. Sep 2001 A1
20010028581 Yanagisawa et al. Oct 2001 A1
20010029648 Ikada et al. Oct 2001 A1
20010031191 Korenaga Oct 2001 A1
20010033664 Poux et al. Oct 2001 A1
20010035801 Gilbert Nov 2001 A1
20010035802 Kadota Nov 2001 A1
20010035805 Suzuki et al. Nov 2001 A1
20010037680 Buck et al. Nov 2001 A1
20010039834 Hsu Nov 2001 A1
20010040484 Kim Nov 2001 A1
20010040487 Ikata et al. Nov 2001 A1
20010040488 Gould et al. Nov 2001 A1
20010041305 Sawada et al. Nov 2001 A1
20010043100 Tomita et al. Nov 2001 A1
20010043129 Hidaka et al. Nov 2001 A1
20010043450 Seale et al. Nov 2001 A1
20010043453 Narwankar et al. Nov 2001 A1
20010045810 Poon et al. Nov 2001 A1
20010048581 Anthony et al. Dec 2001 A1
20010048593 Yamauchi et al. Dec 2001 A1
20010048906 Lau et al. Dec 2001 A1
20010050550 Yoshida et al. Dec 2001 A1
20010050600 Anthony et al. Dec 2001 A1
20010050837 Stevenson et al. Dec 2001 A1
20010052833 Enokihara et al. Dec 2001 A1
20010054512 Belau et al. Dec 2001 A1
20010054734 Koh et al. Dec 2001 A1
20010054756 Horiuchi et al. Dec 2001 A1
20010054936 Okada et al. Dec 2001 A1
20020000521 Brown Jan 2002 A1
20020000583 Kitsukawa et al. Jan 2002 A1
20020000821 Haga et al. Jan 2002 A1
20020000893 Hidaka et al. Jan 2002 A1
20020000895 Takahashi et al. Jan 2002 A1
20020003454 Sweeney et al. Jan 2002 A1
20020005880 Ashe et al. Jan 2002 A1
20020024787 Anthony Feb 2002 A1
20020027263 Anthony et al. Mar 2002 A1
20020027760 Anthony Mar 2002 A1
20020044401 Anthony et al. Apr 2002 A1
20020075096 Anthony Jun 2002 A1
20020079116 Anthony Jun 2002 A1
20020089812 Anthony et al. Jul 2002 A1
20020113663 Anthony et al. Aug 2002 A1
20020122286 Anthony Sep 2002 A1
20020131231 Anthony Sep 2002 A1
20020149900 Anthony Oct 2002 A1
20020158515 Anthony, Jr. et al. Oct 2002 A1
20020186100 Anthony et al. Dec 2002 A1
20030029632 Anthony, Jr. et al. Feb 2003 A1
20030029635 Anthony, Jr. et al. Feb 2003 A1
20030048029 DeDaran et al. Mar 2003 A1
20030067730 Anthony et al. Apr 2003 A1
20030161086 Anthony Aug 2003 A1
20030202312 Anthony et al. Oct 2003 A1
20030206388 Anthony et al. Nov 2003 A9
20030210125 Anthony Nov 2003 A1
20030231451 Anthony Dec 2003 A1
20030231456 Anthony et al. Dec 2003 A1
20040004802 Anthony et al. Jan 2004 A1
20040008466 Anthony et al. Jan 2004 A1
20040027771 Anthony Feb 2004 A1
20040032304 Anthony et al. Feb 2004 A1
20040054426 Anthony Mar 2004 A1
20040085699 Anthony May 2004 A1
20040105205 Anthony et al. Jun 2004 A1
20040124949 Anthony et al. Jul 2004 A1
20040130840 Anthony Jul 2004 A1
20040218332 Anthony et al. Nov 2004 A1
20040226733 Anthony et al. Nov 2004 A1
20050016761 Anthony, Jr. et al. Jan 2005 A9
20050018374 Anthony Jan 2005 A1
20050063127 Anthony Mar 2005 A1
20050248900 Anthony Nov 2005 A1
20050286198 Anthony et al. Dec 2005 A1
20060023385 Anthony et al. Feb 2006 A9
20060139836 Anthony Jun 2006 A1
20060139837 Anthony et al. Jun 2006 A1
20060193051 Anthony et al. Aug 2006 A1
20060202414 Chen Sep 2006 A1
20060203414 Anthony Sep 2006 A1
20070019352 Anthony Jan 2007 A1
20070047177 Anthony Mar 2007 A1
20070057359 Anthony et al. Mar 2007 A1
20070103839 Anthony et al. May 2007 A1
20070109709 Anthony et al. May 2007 A1
20080160681 Anthony et al. Jul 2008 A1
20090321127 Anthony et al. Dec 2009 A1
20100078199 Anthony et al. Apr 2010 A1
20100180438 Anthony et al. Jul 2010 A1
20100294555 Anthony et al. Nov 2010 A1
20100307810 Anthony et al. Dec 2010 A1
20100319978 Anthony et al. Dec 2010 A1
20110032657 Anthony Feb 2011 A1
20110141653 Anthony Jun 2011 A1
20110174523 Anthony et al. Jul 2011 A1
20110192642 Anthony et al. Aug 2011 A1
20120000045 Anthony et al. Jan 2012 A1
20120023741 Anthony et al. Feb 2012 A1
20120023742 Anthony et al. Feb 2012 A1
20120034774 Anthony et al. Feb 2012 A1
Foreign Referenced Citations (152)
Number Date Country
747079 Nov 1966 CA
1237534 May 1988 CA
197 28 692 Jan 1999 DE
198 57 043 Mar 2000 DE
295948 Dec 1988 EP
563873 Oct 1993 EP
279769 Sep 1994 EP
0623363 Nov 1994 EP
98915364 Nov 1994 EP
763867 Mar 1997 EP
0776016 May 1997 EP
872888 Oct 1998 EP
0933871 Aug 1999 EP
1022751 Jul 2000 EP
1024507 Aug 2000 EP
1061535 Dec 2000 EP
1128434 Aug 2001 EP
735606 Jan 2002 EP
1873872 Dec 2008 EP
2496970 Jun 1982 FR
2606207 May 1988 FR
2765417 Dec 1998 FR
2808135 Oct 2001 FR
2217136 Apr 1988 GB
2310967 Mar 2000 GB
2341980 Mar 2000 GB
WO 0016446 Mar 2000 GB
57-172130 Oct 1982 JP
63-269509 Nov 1988 JP
1-27251 Jan 1989 JP
01-120805 May 1989 JP
01-212415 Aug 1989 JP
02-267879 Nov 1990 JP
03-018112 Jan 1991 JP
03-071614 Mar 1991 JP
05-205966 Aug 1993 JP
5-283284 Oct 1993 JP
05-299262 Nov 1993 JP
05-299292 Nov 1993 JP
06-020870 Jan 1994 JP
06-053048 Feb 1994 JP
06-053049 Feb 1994 JP
06-053075 Feb 1994 JP
06-053077 Feb 1994 JP
06-053078 Feb 1994 JP
06-084695 Mar 1994 JP
06-120704 Apr 1994 JP
06-151014 May 1994 JP
06-151244 May 1994 JP
06-151245 May 1994 JP
06-231995 Aug 1994 JP
06-251981 Sep 1994 JP
06-275463 Sep 1994 JP
6-302471 Oct 1994 JP
06-325977 Nov 1994 JP
11-214244 Nov 1994 JP
06-267790 Dec 1994 JP
07-022757 Jan 1995 JP
07-122757 May 1995 JP
07 161568 Jun 1995 JP
07-201651 Aug 1995 JP
07-202477 Aug 1995 JP
07-235406 Sep 1995 JP
07-235852 Sep 1995 JP
07-235862 Sep 1995 JP
07-240651 Sep 1995 JP
07-263871 Oct 1995 JP
07-263280 Nov 1995 JP
08-97328 Apr 1996 JP
08-124795 May 1996 JP
08-163122 Jun 1996 JP
08-17025 Jul 1996 JP
08-172025 Jul 1996 JP
08-181035 Jul 1996 JP
8172025 Jul 1996 JP
08-273973 Oct 1996 JP
09-232185 Sep 1997 JP
9-266130 Oct 1997 JP
09-275145 Oct 1997 JP
09-284076 Oct 1997 JP
09-284077 Oct 1997 JP
09-284078 Oct 1997 JP
09-293987 Nov 1997 JP
09-294041 Nov 1997 JP
9-294041 Nov 1997 JP
10-12490 Jan 1998 JP
10-41637 Feb 1998 JP
10-41677 Feb 1998 JP
10-223470 Aug 1998 JP
11-21456 Apr 1999 JP
11-97291 Apr 1999 JP
11-102839 Apr 1999 JP
11-21456 Aug 1999 JP
11-214256 Aug 1999 JP
11-223396 Aug 1999 JP
11-219824 Oct 1999 JP
11-294908 Oct 1999 JP
09-294041 Nov 1999 JP
11-305302 Nov 1999 JP
11-319222 Nov 1999 JP
11-345273 Dec 1999 JP
2000-188218 Apr 2000 JP
00-188218 Jul 2000 JP
2000-243646 Aug 2000 JP
00-261235 Sep 2000 JP
00-299249 Oct 2000 JP
2000-286665 Oct 2000 JP
WO9007785 Jul 1990 WO
WO 9115046 Oct 1991 WO
WO 2004070905 Aug 1994 WO
WO9622008 Jul 1996 WO
WO9641376 Dec 1996 WO
WO 9720332 Jun 1997 WO
09-284078 Oct 1997 WO
WO 9743786 Nov 1997 WO
WO 9845921 Oct 1998 WO
WO 9904457 Jan 1999 WO
WO 9919982 Apr 1999 WO
WO 9937008 Jul 1999 WO
WO 9952210 Oct 1999 WO
WO 0016446 Mar 2000 WO
WO 0065740 Nov 2000 WO
WO 0074197 Dec 2000 WO
WO 0077907 Dec 2000 WO
0106631 Jan 2001 WO
WO 0106631 Jan 2001 WO
WO 0110000 Feb 2001 WO
WO 0141232 Jun 2001 WO
WO 0141233 Jun 2001 WO
WO 0145119 Jun 2001 WO
WO 0171908 Sep 2001 WO
WO 0175916 Oct 2001 WO
WO 0184581 Nov 2001 WO
WO 0186774 Nov 2001 WO
WO 0259401 Jan 2002 WO
WO 0211160 Feb 2002 WO
WO 0215360 Feb 2002 WO
WO 0227794 Apr 2002 WO
WO 0233798 Apr 2002 WO
WO 0245233 Jun 2002 WO
WO 02065606 Aug 2002 WO
WO 02080330 Oct 2002 WO
WO 03005541 Jan 2003 WO
WO 2004070905 Aug 2004 WO
WO 2005002018 Jan 2005 WO
WO 2005015719 Feb 2005 WO
WO 2005065097 Jul 2005 WO
WO 2006093830 Sep 2006 WO
WO 2006093831 Sep 2006 WO
WO 2006099297 Sep 2006 WO
WO 2006104613 Oct 2006 WO
WO 2007103965 Sep 2007 WO
Non-Patent Literature Citations (297)
Entry
Oct. 1, 2002, PCT International Search Report for PCT/US01/48861.
Jan. 2, 2003, PCT International Search Report for PCT/US01/44681.
Jan. 1, 1994, Greb, “An Intuitive Approach to EM Fields,” EMC Test & Design, Jan. 1994, pp. 30-33.
Dec. 1, 1993, Greb, “An Intuitive Approach to EM Coupling,” EMC Test & Design, Dec. 1993, pp. 20-25.
Jun. 1, 1986, Sakamoto, “Noiseproof Power Supplies: What's Important in EMI Removal Filters?” JEE, Jun. 1986, pp. 80-85.
Jan. 1, 1999, Montrose, “Analysis on Loop Area Trace Radiated Emissions from Decoupling Capacitor Placement on Printed Circuit Boards,” IEEE, 1999, pp. 423-428.
Jan. 1, 1999, Miyoshi, “Surface Mounted Distributed Constant Type Noise Filter,” IEEE, 1999, pp. 157-160.
Jan. 1, 1999, Shigeta et al., “Improved EMI Performance by Use of a Three-Terminal-Capacitor Applied to an IC Power Line,” IEEE, 1999, pp. 161-164.
Jul. 19, 1999, PCT International Search Report for PCT/US99/07653.
Oct. 13, 1999, IPER for PCT/US99/07653.
U.S. Appl. No. 10/479,506, Claims 1-46 from Preliminary Amendment filed Dec. 10, 2003.
U.S. Appl. No. 10/189,339, Claims 1-41 from Preliminary Amendment filed Oct. 28, 2003.
U.S. Appl. No. 10/443,792, Claims 1-41 from Preliminary Amendment filed Oct. 28, 2003.
Aug. 19, 1998, PCT International Search Report for PCT/US98/06962.
Apr. 19, 1999, PCT International Search Report for PCT/US99/01040.
Sep. 18, 2000, PCT International Search Report for PCT/US00/11409.
Sep. 13, 2000, PCT International Search Report for PCT/US00/14626.
Nov. 8, 2000, PCT International Search Report for PCT/US00/16518.
Dec. 28, 2000, PCT International Search Report for PCT/US00/21178.
Sep. 1, 1996, Carpenter, Jr. et al., “A New Approach to TVSS Design,” Power Quality Assurance, Sep./Oct. 1996 p. 60-63.
Jan. 1, 1996, Raychem, “Polyswitch Resettable Fuses,” Circuit Protection Databook, Jan. 1996, pp. 11-18.
Dec. 28, 2001, PCT International Search Report for PCT/US01/41720.
Jun. 13, 2001, PCT International Search Report for PCT/US01/09185.
Jul. 1, 2000, Polka et al., “Package-Level Interconnect Design for Optimum Electrical Performance,” Intel Technology Journal Q3, 2000, pp. 1-17.
May 10, 2002, PCT International Search Report for PCT/US01/43418.
Mar. 13, 2002, PCT International Search Report for PCT/US01/32480.
Aug. 19, 2002, PCT International Search Report for PCT/US02/10302.
Feb. 28, 2003, PCT International Search Report for PCT/US02/21238.
Mar. 18, 2002, PCT International Search Report for PCT/US01/13911.
Jul. 16, 1991, PCT International PCT International Search Report for PCT/US91/02150.
Jun. 28, 2001, PCT International Search Report for PCT/US01/037492.
“Johanson Dielectrics, Inc. Licenses X2Y Circuit Conditioning Technology,” Press Release, Dec. 16, 1998, 1 page.
Mar. 1, 1997, Beyne et al., “PSGA—an innovative IC package for single and multichip designs,” Components, Mar. 1997, pp. 6-9.
“EMC Design for Brush Commutated DC Electric Motors,” Sep. 15, 1997, pp. 1-2.
Apr. 1, 1996, “Tomorrow's Capacitors,” Components, 1996, No. 4, p. 3.
Mason, “Valor-Understanding Common Mode Noise,” Mar. 30, 1998, pp. 1-7.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/237,079, Claims 21-81; filed Sep. 9, 2002.
David Anthony et al., specification, claims, figures for U.S. Appl. No. 10/766,000, Claims 1-63; filed Jan. 29, 2004.
William Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/399,630, Claims 1-35; filed Aug. 27, 2003.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/432,840, Claims 1-39; filed May 28, 2003.
William Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/443,482, Claims 1-25; filed Jun. 12, 2003.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/435,199, Claims 1-32; filed May 12, 2003.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/115,159, Claims 1-31; filed Apr. 2, 2002.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/189,338, Claims 1-69; filed Jul. 2, 2002.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/189,339, Claims 1-41; filed Jul. 2, 2002.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/479,506, Claims 1-46; filed Dec. 10, 2003.
Anthony Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/443,764, Claims 26-40; filed Sep. 16, 2003.
Anthony Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/443,792, Claims 1-41; May 23, 2003.
Anthony Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/443,788, Claims 1-20; filed May 23, 2003.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/443,778, Claims 1; 21-59; filed May 23, 2003.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/460,361, Claims 1-16; filed Jun. 13, 2003.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/705,962, Claims 19-33; filed May 25, 2005.
Anthony Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/369,335, Claims 1-20; Feb. 18, 2003.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 09/647,648, Claims 1-48; filed Nov. 17, 2000.
Anthony Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/328,942, Claims 1-20; filed Dec. 23, 2002.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 09/632,048, Claims 1-20; filed Aug. 3, 2000.
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 09/996,355, Claims 1-73; filed Nov. 29, 2001.
Willian Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/023,467; Claims 1-20; filed Dec. 17, 2001.
Jan. 1, 2005, Weir, et al., “DesignCon 2005, High Performance FPGA Bypass Networks”.
Apr. 25, 2002, Pending claims 1-40 and figures (3 pages) for U.S. Appl. No. 10/399,590; the specification is contained in WO 02/337498, filed Oct. 17, 2001, which is the published verison of PCT/US01/32480, which is Neifeld Reference: X2YA0015UPCT-US, which is reference F-063 in the Information Disclosure Statement filed Apr. 23, 2004.
Feb. 11, 2005, PCT International Search Report for PCT/US04/00218.
Feb. 18, 2005, PCT International Search Report for PCT/US04/14539.
Mar. 24, 2005, Australian Patent Office Examination Report for SG 200303041-8; Neifeld Ref: X2YA0025UPCT-SG.
Apr. 11, 2005, PCT International Search Report for PCT/US04/18938.
Nov. 2000, Muccioli, “EMC Society Seattle and Oregon Chapters—New X2Y Filter Technology Emerges as Singles Component Solution for Noise Suppression”.
Sep. 27, 2005, PCT Corrected IPER for PCT/US04/00218.
Nov. 8, 2005, Supplementary Partial European Search Report EP 99916477.
Oct. 27, 2005, Supplementary European Search Report EP 98915364.
Dec. 9, 2005, PCT ISR for PCT/US04/39777.
May 8, 2006, EP Examination Report for 99916477.5-2215.
PCT Written Opinion of the International Search Authority, PCT/US2007/063463.
PCT International Search Report, PCT/US2007/063463.
Oct. 31, 2007, PCT International Search Report PCT/US06/06609.
Oct. 31, 2007, PCT Written Opinion of the International Search Authority PCT/US06/06609.
Jun. 12, 2008, PCT International Search Report PCT/US06/06608.
Jun. 12, 2008, PCT Written Opinion of the International Search Authority PCT/US06/06608.
Jun. 12, 2008, PCT International Search Report PCT/US06/06607.
Jun. 12, 2008, PCT Written Opinion of the International Search Authority PCT/US06/06607.
Jun. 17, 2008, PCT International Search Report PCT/US06/08901.
Jun. 17, 2008, PCT Written Opinion of the International Search Authority PCT/US06/08901.
Jun. 6, 2008, European Search Report EP 07 01 9451.
Sep. 25, 2008, European Search Report EP 01 99 4116.
Sep. 25, 2008, European Search Report EP 01 99 9170.
Sep. 25, 2008, European Search Report EP 01 99 0677.
Sep. 18, 2008, PCT Written Opinion of the International Search Authority PCT/US07/063463.
Sep. 25, 2008, European Search Report EP 01 90 8876.
Sep. 25, 2008, European Search Report EP 01 92 2559.
Sep. 25, 2008, European Search Report EP 01 98 1731.
Jan. 24, 1995, Patent Abstracts of Japan, English translation of abstract for JP 07-022757.
Oct. 13, 2000, Patent Absracts of Japan, English translation of abstract for JP 2000-28665.
Nov. 1, 1960, Cohn, “Characteristic Impedances of Broadside-Coupled Strip Transmission Lines”, IRE Transactions on Microwave Theory and Techniques, vol. 8.6, 633-637.
May 1, 1969, Goldmann, “Geometric Optimization of Controlled Collapse Interconnections”, IBM Journal of Research and Development, vol. 13.3, pp. 251-265.
Jan. 1, 1974, Howe, Stripline Circuit Design, pp. 1-308.
May 1, 1971, Hines, “Reciprocal and Nonreciprocal Modes of Propagation in Ferrite Stripline and Microstrip Devices”, IEEE Transactions on Mircowave Theory and Techniques, vol. MTT-19.5, pp. 442-451.
Sep. 1, 1976, Coda et al., “Design Considerations for High-Frequency Ceramic Chip Capacitors”, IEEE, vol. PHP-12.3, pp. 206-212.
Apr. 1, 1985, King, Texas Instruments Design Group Electromagnetic Compatibility Design Guide, pp. 1-98.
Sep. 1, 1987, Robinson et al., “A Midrange VLSI Hewlett-Packard Precision Architecture Computer”, Hewlett-Packard Journal, vol. 38.9, pp. 26-37.
Jan. 1, 1988, Chao et al., “Multilayer Thin-Film Substrate for Multichip Packaging”, Electronic Components Conference, Proceedings of the 38th, pp. 276-281.
Jan. 1, 1989, Quint et al., “Electrical Design Methodology of a 407 Pin Multi-Layer Ceramic Package”, Electronic Components Conference, Proceedings of the 39th, pp. 392-397.
Jan. 1, 1989, Bhat et al., Stripline-Like Transmission Lines for Microwave Integrated Circuits, pp. 1-695.
May 1, 1989, Paul, “A Comparison of the Contributions of Common-mode and Differential Mode Currents in Radiated Emissions”, IEEE Transactions on Electromagnetic Compatability, vol. 31.2, pp. 189-193.
Aug. 1, 1989, King et al., Michael King Lecture Notes, pp. 1-14.
May 1, 1982, Bonner et al., “Advanced Printed-Circuit Board Design for High Performance Computer Applications”, IBM Journal of Research and Development, vol. 26.3, pp. 297-305.
Jan. 1, 1989, Hnatek et al., “Quality Issues of High Pin Count Fine Pitch VLSI Packages”, IEEE International Test Conference, pp. 397-421.
May 1, 1989, Jayaraj et al., “Performance of Low Loss, High Speed Interconnects for Multi-GHz Digital Systems”, IEEE Proceedings of the Aerospace and Electronics Conference, vol. 4, pp. 1674-1681.
Jan. 1, 1989, Liang et al., “High-Performance VLSI Through Package-Level Interconnects”, IEEE Proceedings 39th Electronic Components Conference, pp. 518-523.
Jun. 1, 1987, Palusinski et al., “Electrical Modeling of Interconnections in Multilayer Packaging Structures”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 10.2, pp. 217-223.
Sep. 1, 1987, Kwon et al., “Closely Packed Microstrip Lines as Very High-Speed Chip-to-Chip Interconnects”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 10.3, pp. 314-320.
Dec. 1, 1985, Watari et al., “Packaging Technology for the NEC SX Supercomputer”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, vol. 8.4 pp. 462-467.
Jan. 1, 1989, Seraphim et al., “Principles of Electronic Packaging”, McGraw-Hill series in electrical engineering.
Nov. 1, 1989, Gisin, “Minimizing Electromagnetic Interference Through Proper Printed Circuit Board Layout Techniques”, Wescon/89 Conference Record, pp. 352-354.
Jan. 1, 1983, Wilson et al., “Theoretical and Experimental Analysis of Coupling Characteristics of Dual TEM Cells”, IEEE 1983 International Symposium on Electromagnetic Compatibility, pp. 513-517.
Jan. 1, 1985, Keenan, Decoupling and Layout of Digital Printed Circuits, 1.0 to A4-4.
Jan. 1, 1989, AMS International, Electronic Materials Handbook: Packaging, vol. 1, pp. 18-34; 76-88; 127-141; 597-610.
Sep. 1, 1987, Mangelsdorf et al., “A VLSI Processor for HP Precision Architecture”, Hewlett-Packard Journal, vol. 38.9, pp. 4-11.
Apr. 1, 1989, Jessen, “VXIbus Product Development Tools”, Hewlett-Packard Journal, vol. 40.2, 96-97.
Apr. 1, 1989, Jessen, “VXIbus: A New Interconnection Standard for Modular Instruments”, Hewlett-Packard Journal, vol. 40.2, pp. 91-95.
Jan. 1, 1990, Akihiro et al., “Packaging Technology for the NEC SX-3/SX Supercomputer”, IEEE Electronic Components and Technology Conference, pp. 525-533.
Jan. 1, 1990, Smith and Savara, “High-Speed Characteristics of Multilayer Ceramic Packages and Test Fixtures”, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990, 12th Annual, pp. 203-206.
Jan. 1, 1990, Shimada et al., “Large Scale Multilayer Glass-Ceramic Substrate for Supercomputer”, IEEE 40th Electronic Components and Technology Conference, 1990, vol. 1, pp. 76-83.
Jan. 1, 1990, Mielke et al., “High-Speed Fixture Interconnects for Mixed-Signal IC Testing”, IEEE International Test Conference, pp. 891-895.
Jan. 1, 1990, Walker, Capacitance, Inductance, and Crosstalk Analysis, pp. 1-231.
May 1, 1990, Prymak, “Advanced Decoupling Using Ceramic MLC Capacitors”, 40th Electronic Components and Technology Conference, pp. 1014-1023.
Sep. 1, 1990 Moresco, “Electronic System Packaging: The Search for Manufacturing the Optimum in a Sea of Constraints”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 13.3, pp. 494-508.
Oct. 1, 1990, Quint et al., “Measurement of R, L, and C Parameters in VLSI Packages”, Hewlett-Packard Journal, vol. 41.5, pp. 73-77.
Feb. 1, 1991, Henke et al., “A Checklist for EMC-Controlled Printed Circuit Board Designs”, Printed Circuit Design, vol. 8.2.
Feb. 1, 1991, Tomlinson, “Bringing Board Layout Up to Speed”, Printed Circuit Design, vol. 8.2, pp. 6-10.
Aug. 1, 1991, Montrose, “Overview on Design Techniques for Printed Circuit Board Layout Used in High Technology Products”, IEEE International Symposium on Electromagnetic Compatability, 1991, pp. 61-66.
Sep. 1, 1991, Nghiem et al., “A General Analysis of Propagation Along Multi-Layer Superconducting Stripline and Microstrip Transmission Lines” IEEE Transactions on Microwave Theory and Techniques, vol. 39.9, pp. 1553-1565.
Jan. 1, 1991, Tummala et al., “Packaging Technology for IBM's Latest Mainframe Computers (S/390/ES9000)”, IEEE, pp. 682-688.
Jan. 1, 1991, Institute for Interconnecting and Packaging Electronic Circuits, IPC-D-275: Design Standard for Rigid Printed Boards and Rigid Printed Board Assemblies, pp. 1-97.
Jan. 1, 1991, Fluke, Controlling Conducted Emissions by Design, pp. 1-334.
Jan. 1, 1992, Becker et al., “Time Domain Electromagnetic Analysis of a Via in a Multilayer Computer Chip Package”, Microwave Symposium Digest, 1992, IEEE MTT-S International, pp. 1229-1232.
Jan. 1, 1992, Papsioannou et al., “Generic Design Rules for High-Speed MCM's”, IEMT 12th International Electronic Manufacturing Technology Symposium, 1992, pp. 237-244.
Jan. 1, 1992, Wu, “Resistance Computations for Multilayer Packaging Structures by Applying the Boundary Element Method”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, vol. 15.1, pp. 87-96.
Feb. 1, 1992, Teener, “A Bus on a Diet—The Serial Bus Alternative—An Introduction to the P1394 High Performance Serial Bus”, IEEE Digest of Papers of 37th Computer Society International Conference, Compcon Spring 1992, pp. 316-321.
Feb. 1, 1992, Wyatt, “EMC Design of the HP 54600 Series Oscilloscopes”, Hewlett-Packard Journal, vol. 43.1, pp. 41-45.
Apr. 1, 1992, Carey, “Trends in Low Cost, High-Performance Substrate Technology”, IEEE Micro, pp. 19-27.
Apr. 1, 1992, DesJardin, “VXIbus: A Standard for Test and Measurement System Architecture”, Hewlett-Packard Journal, vol. 43.2, pp. 6-14.
May 1, 1992, Gravelle et al., “EMI/EMC in Printed Circuits Boards—a Literature Review”, IEEE Transactions on Electromagnetic Compatibilty, vol. 34.2, pp. 109-116.
Jul. 1, 1992, de Vreede, et al., “A High Frequency Model Based on the Physical Structure of the Ceramic Multilayer Capacitor”, IEEE Transactions on Microwave Theory and Techniques, vol. 40.7, pp. 1584-1587.
Jan. 1, 1992, Murano et al., “Packaging Technology for the NEC SX-3 Supercomputer”, IEEE Transaction on Components, Hybrids, and Manufacturing Technology, pp. 411-417.
Aug. 1, 1992, Pan et al., “The Simulation of High-Speed, High-Density Digital Interconnects in Single Chip Packages and Multichip Modules”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 15, No. 4, pp. 465-477.
Aug. 1, 1992, Daijavad et al., “Methodology for Evaluating Practical EMI Design Guidelines Using EM Analysis Programs”, IEEE International Symposium on Electromagnetic Compatibility, 1992, pp. 30-34.
Aug. 1, 1992, Frink et al., “High-Performance Designs for the Low-Cost PA-RISC Desktop”, Hewlett-Packard Journal, vol. 43.4, pp. 55-63.
Aug. 1, 1992, Gleason et al., “VLSI Circuits for Low-End and Midrange PA-RISC Computers”, Hewlett-Packard Journal, vol. 43.4, pp. 12-22.
Aug. 1, 1992, Lettang, “ECL Clocks for High-Performance RISC Workstations”, Hewlett-Packard Journal, vol. 43.4, pp. 23-25.
Sep. 1, 1992, Davidson et al., “Physical and electrical design features of the IBM Enterprise System/9000 circuit Module”, IBM J. Res. Develop. vol. 36, No. 5, pp. 877-888.
Oct. 1, 1992, Foss et al., “Fast Interfaces for DRAMs”, IEEE Spectrum, vol. 29.10.
Nov. 1, 1992, Bussmann, “Active Compensation of Interconnection Losses for Multi-GHz Clock Distribution Networks”, IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, vol. 39.11, pp. 790-798.
Dec. 1, 1992, Matta, “Advances in Integrated Circuit Packaging: Demountable TAB”, Hewlett-Packard Journal, vol. 43.6, pp. 62-77.
Dec. 1, 1992, Thomas et al., “Software for the HP EISA SCSI Card”, Hewlett-Packard Journal, vol. 43.6, pp. 97-108.
Jan. 1, 1993, Rao et al., “Manufacture of Advanced Cu-Pi Multi Chip Modules”, IEEE Proceedings 43rd Electronic Components and Technology Conference, pp. 920-934.
Jan. 1, 1993, “Finite-Difference Time-Domain Modeling of Noise in Computer Packages” IEEE, pp. 123-127.
Feb. 1, 1993, Jouppi et al., “A 300MHz 115W 32b Bipolar ECL Microprocessor with On-Chip Caches”, IEEE 40th International Solid-State Circuits Conference, 1993 Digest of Papers, pp. 84-85.
Jan. 1, 1993, Iqbal et al., “Design Tradeoffs Among MCM-C, MCM-D and MCM-D/C Technologies”, Multi-Chip Module Conference, 1993. MCMS-93, Proceedings, 1993 IEEE, pp. 12-18.
Jan. 1, 1993, Becker et al., “Power Distribution Modelling of High Performance First Level Computer Packages”, IEEE Electrical Performance of Electronic Packaging, 1993, pp. 202-205.
Aug. 1, 1993, Downing et al., “Decoupling Capacitor Effects on Switching Noise”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 16.5, pp. 484-489.
Nov. 1, 1993, Blennemann et al., “High Aspect Ratio Lines as Low Distortion High Frequency Off-Chip Interconnects”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 16.7, pp. 692-698.
Oct. 1, 1993, Becker et al., “Finite-Difference Time-Domain Modeling of Currents in Multi-Layered Computer Chip Packages”, IEEE Electrical Performance of Electronic Packaging, 1993, pp. 181-184.
Oct. 1, 1993, Yamaguchi et al., “Packaging Technology for High-Speed Multichip Module Using Copper-Polyimide Thin Film Multilayer Substrate [for B-ISDN]”, Electronic Manufacturing Technology Symposium, 1993, Fifteenth IEEE/CHMT International, pp. 406-410.
Dec. 1, 1993, Intel, “AP-125: Designing Microcontroller Systems for Electrically Noisy Environments”, pp. 1-21.
Jan. 1, 1993, Institute for Interconnecting and Packaging Electronic Circuits, IPC-T-50: Terms and Definitions Interconnecting and Packaging Electronic Circuits, pp. 1-71.
Feb. 1, 1993, IEEE, Std 1155-1992: IEEE Standard for VMEbus Extensions for Instrumentation: VXIbus, pp. 1-199.
Jun. 1, 1993, Astrey et al., “Performance Features of the PA7100 Microprocessor”, IEEE Micro, vol. 13.3, pp. 22-35.
Jun. 1, 1993, McLellan, “The Alpha AXP Architecture and 21064 Processor”, IEEE Micro, vol. 13.3, pp. 36-47.
Jan. 1, 1994, Kambe et al., “MCM Substrate with High Capacitance”, Proceedings of the 1994 International Conference on Multichip Modules, pp. 136-141.
Jan. 1, 1994, Center for Electronic Packaging Research, “Simultaneous Switching Noise: Influence of Plane-Plane and Plane-Signal Trace Coupling”, Electronic Components and Technology Conference, 1994. Proceedings, 44th, pp. 957-961.
Jan. 1, 1994, Dimos et al., “Thin-Film Decoupling Capacitors for Multichip Modules”, Electronic Components and Technology Conference, 1994. Proceedings, 44th, pp. 894-899.
Jan. 1, 1994, Ida et al., “An L-Band Power Amplifier Multi-Chip-Module Using Multi-Layered Planar Circuits”, IEEE MTT-S International Microwave Symposium Digest 1994, vol. 3, pp. 1649-1652.
Jan. 1, 1994, Schaper et al., “Electrical Characterization of the Interconnected Mesh Power System (IMPS) MCM Topology”, IEEE Proceedings 44th Electronic Components and Technology Conference, 1994, pp. 791-795.
Jan. 1, 1994, Hirano et al., “Characterization and Reduction of Simultaneous Switching Noise for a Multilayer Package”, IEEE Proceedings of 44th Electronic Components and Technology Conference, 1994, pp. 949-956.
Jan. 1, 1994, Huang et al., “CBGA Package Design for C4 PowerPC Microprocessor Chips: Trade-off Between Substrate Routability and Performance”, Electronic Components and Technology Conference, 1994. Proceedings, 44th, pp. 88-93.
Jan. 1, 1994, AT&T, Carrierless AM/PM (CAP) Host-DSL Transceiver Layout Guide, pp. 1-24.
May 1, 1994, Yamanak et al., “320 Gb/s High-Speed ATM Switching System Hardware Technologies Based on Copper-Polyimide MCM”, IEEE 44th Electronic Components and Technology Conference, pp. 776-785.
Jan. 1, 1994, Iqbal et al., “Design Tradeoffs Among MCM-C, MCM-D and MCM-D/C Technologies”, IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part B: Advanced Packaging, pp. 22-29.
Jul. 1, 1994, Schwab et al., “Multilayer Suspended Stripline and Coplanar Line Filters”, IEEE Transactions on Microwave Theory and Techniques, vol. 42.7, pp. 1403-1407.
Oct. 1, 1994, Garg et al., “Thermal Design of an Advanced Multichip Module for a RISC Processor”, IEEE International Conference on Computer Design: LVSI in Computers and Processors, 1994, pp. 608-611.
May 1, 1994, Light et al., “Process Considerations in the Fabrication of Teflon Printed Circuit Boards”, IEEE Proceedings of the Electronic Components and Technology Conference, 1994, pp. 542-549.
Jan. 1, 1994, Swaminathan et al., “Electrical Design of an MCM for a Microprocessor System”, MCM '94 Proceedings, pp. 480-486.
May 1, 1994, Wu et al., “Modeling and Simulation of Integral Decoupling Capacitors in Single and Multichip Module Electronics Packaging”, IEEE Proceedings 44th Electronic Components and Technology Conference, 1994, pp. 945-948.
May 1, 1994, Panicker et al., “Low-Cost Ceramic Thin-Film Ball Grid Arrays”, IEEE Proceedings 44th Electronic Components and Technology Conference, 1994, pp. 29-31.
Jun. 1, 1994, “Present and Future Directions for Multichip Module Technologies”, IEEE Symposium on VLSI Circuits, 1994. Digest of Technical Papers, pp. 51-54.
May 1, 1994, DeHaven and Dietz, “Controlled Collapse Chip Connection (C4)—an Enabling Technology”, IEEE Proceedings of 44th Electronic Components and Technology Conference, 1994, pp. 1-6.
Jan. 1, 1994, Fang et al., “Effects of Losses in Power Planes in the Simulation of Simultaneous Switching Noise”, Proceedings of the 3rd Topical Meeting on Electrical Performance of Electronic Packaging, pp. 110-112.
Apr. 1, 1994, Light et al., “Integrated Flex: Rigid-Flex Capability in a High Performance MCM”, MCM '94 Proceedings, pp. 430-442.
Jan. 1, 1994, Jastech, Advanced EMC Printed Circuit Board Design, pp. 1 to 8-15.
Jan. 1, 1994, Hannemann et al., Semiconductor Packaging a Multidisciplinary Approach, pp. 1-886.
Feb. 23, 2009, Intel Corp, Intel Corp Form 10-K for period ending Dec. 17, 2008.
Feb. 20, 2008, Intel Corp, Intel Corp Form 10-K for period ending Dec. 29, 2007.
Sep. 1, 1994, Ogasawara et al., “High Isolation Analog 4×4 Matrix Switch LSI for Centralized Control Microcell Radio Systems”, 5th IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, 1994. Wireless Networks—Catching the Mobile Future, vol. 1, pp. 369-371.
Dec. 1, 1994, IEEE Standards Board, IEEE Standard for Medical Device Communications—Physical Layer Interface—Cable Connected.
Jan. 1, 1995, Vaidyanath et al., “Simultaneous Switching Noise: Influence of Plane-Plane and Plane-Signal Trace Coupling”, IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part B, vol. 18.3, pp. 496-502.
Jan. 1, 1995, Lester et al., “Low Cost Miniaturized EHF Satcom Transceiver Featuring HEMT MMICS and LTCC Multilayer Packaging”, IEEE 1995 Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 35-38.
Jan. 1, 1995, Liaw, “Simulation and Modeling of Mode Conversion at Vias in Multilayer Interconnections”, IEEE Proceedings of the 45th Electronic Components and Technology Conference, 1995, pp. 361-367.
Jan. 1, 1996, Montrose, Printed Circuit Board Design Techniques for EMC Compliance, pp. 1-238.
Feb. 1, 1995, Yamanaka et al., “320 Gb/s High-speed ATM Switching System Hardware Technologies Based on Copper-Polymide MCM”, IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part B: Advanced Packaging, vol. 18.1, pp. 83-91.
Apr. 1, 1995, Pearson, “A Low-Cost, High-Performance PA-RISC Workstation with Built-in Graphics Multimedia, and Networking Capabilities”, Hewlett-Packard Journal, vol. 46.2, pp. 6-11.
Feb. 1, 1995, Kambe, et al., “MCM Substrate with High Capacitance”, IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part B, vol. 18.1, pp. 23-27.
Oct. 1, 1995, Cohn, “Shielded Coupled-Strip Transmission Line”, IRE Transactions on Microwave Theory and Techniques, vol. 3.5, pp. 29-38.
Sep. 1, 1995, Murphy et al., “High Frequency Performance of Multilayer Capacitors”, IEEE Transactions on Microwave Theory and Techniques, vol. 43, No. 9, 2007-2015.
Mar. 1, 1995, Dimos et al., “Thin-Film Decoupling Capacitors for Multichip Modules”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part A, vol. 18.1, pp. 174-179.
Feb. 1, 1995, Sarfaraz et al., “Electrical Design of an MCM Package for a Multi-Processor Digital System”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part B. vol. 18, No. 1, pp. 127-143.
Nov. 1, 1995, Lee et al., “Modeling and Analysis of Multichip Module Power Supply Planes”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, vol. 18.4, pp. 628-639.
May 1, 1995, Hussein, “FDTD Applications to Electromagnetic Interference and Shielding, WESCANEX 95. Communications, Power, and Computing”, Conference Proceedings. IEEE, pp. 478-482.
Feb. 1, 1995, Light et al., “Integrated Flex: Rigid-Flex Capability in a High Performance MCM”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part B, vol. 18.1, pp. 47-52.
Dec. 1, 1995, Huang et al., “A Packaging System for Built-in Microcircuits in Multilayer Substrates”, 1995 Japan IEMT Symposium: Proceedings of 1995 International Electronic Manufacturing Technology Symposium, pp. 460-463.
Jan. 1, 1995, Institute for Interconnecting and Packaging Electronic Circuits, IPC-D-317A: Design Guidelines for Electronic Packaging Utilizing High-Speed Techniques, pp. 1-70.
Nov. 6, 1995, Miskell, “Avoid EMI Woes in Power-Bus Layouts”, Electronic Design, vol. 43.23, pp. 147-150.
Jan. 1, 1995, Wu et al., “Precise CMOS Current Sample/Hold Circuits Using Differential Clock Feedthrough Attenuation Techniques”, IEEE Journal of Solid-State Circuitry, vol. 30.1, pp. 76-80.
Apr. 1, 1995, Lee, “Accelerating Multimedia with Enhanced Microprocessors”, IEEE Micro, vol. 15.2, p. 22-32.
Mar. 1, 1995, Hunt, “Advanced Performance Features of the 64-bit PA-8000”, Compcon '95, ‘Technologies for the Information Superhighway’, Digest of Papers, pp. 123-128.
Dec. 1, 1995, IEEE Standards Board, IEEE Standard for a High Performance Serial Bus .
Apr. 1, 1995, Edmondson et al., “Superscalar Instruction Execution in the 21164 Alpha Microprocessor”, IEEE Micro, vol. 15.2, 33-43.
Apr. 1, 1995, Bass et al., “The PA 7100LC Microprocessor: A Case Study of 1C Design Decisions in a Competitive Environment”, Hewlett-Packard Journal, vol. 46.2, 12-22.
Feb. 1, 1996, Fessler et al., “The Effectiveness of an Image Plane in Reducing Radiated Emissions”, IEEE Transactions on Electromagnetic Compatibility, vol. 38.1, pp. 51-61.
Feb. 1, 1996, Kromann et al., “A Hi-Density C4/CBGA Interconnect Technology for a CMOS Microprocessor”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, vol. 19.1, pp. 166-173.
Feb. 1, 1996, Intel, AP-711: EMI Design Techniques for Microcontrollers in Automotive Applications, pp. 1-21.
Feb. 1, 1996, Wu et al., “1.2V CMOS Switched-Capacitor Circuits”, IEEE 42nd International Solid-State Circuits Conference, 1996, pp. 388-389, 479.
Feb. 1, 1996, Bryg et al., “A High-Performance, Low-Cost Multiprocessor Bus for Workstations and Midrange Servers”, Hewlett-Packard Journal, vol. 47.1, pp. 18-24.
Feb. 1, 1996, Chan et al., “Design of the HP PA 7200 CPU”, Hewlett- Packard Journal, vol. 47.1, pp. 25-33.
Feb. 1, 1996, Harline et al., “Symmetric Multiprocessing Workstations and Servers System-Designed for High Performance and Low Cost”, Hewlett-Packard Journal, vol. 47.1, pp. 8-17.
Feb. 1, 1996, Hotchkiss et al., “A New Memory System Design for Commercial and Technical Computing Products”, Hewlett-Packard Journal, vol. 47.1, pp. 44-51.
Mar. 1, 1996, Intel, AP-524: Pentium® Pro Processor GTL+Guidelines, pp. 1-26.
Mar. 21, 1996, IEEE Standards Board, IEEE Standard for Low-Voltage Differential Signals (LVDS) for Scalable Coherent Interface (SCI), pp. 1-29.
Apr. 26, 1996, Bauer, “BGA and Flip-Chip Technologies: A to Z”, SEMICON/Test, Assembly & Packaging 96.
May 1, 1996, Aguirre et al., “Numerical Investigation of Radiated Emissions Mechanisms in Single-Chip Packages”, IEEE Proceedings of 46th Electronic Components and Technology Conference, 1996, pp. 996-1001.
May 1, 1996, Madhavan et al., “A Novel High Speed Low Skew Clock Distribution Scheme in 0.8 Micron CMOS”, 1996 IEEE International Symposium on Circuits and Systems, 1996. ISCAS '96., Connecting the World, vol. 4, pp. 149-152.
Jul. 1, 1996, Ommodt et al., “Vertical Interconnects for Phased Array Packaging”, IEEE Antennas and Propagation Society International Symposium, vol. 2, pp. 1334-1337.
Oct. 1, 1996, Fang et al., “Reduction of Power and Ground Noise Coupling in Mixed Signal Modules”, IEEE 5th Topical Meeting on Electrical Performance of Electronic Packaging, 1996, pp. 90-92.
Oct. 1, 1996, Lei et al., “Power Distribution Noise Suppression Using Transmission Line Termination Techniques”, Proceedings of the 5th Topical Meeting on the Electrical Performance of Electrical Packaging, pp. 100-102.
Jan. 1, 1996, Libous et al., “Measurement, Modeling and Simulation of Flip-Chip CMOS ASIC Simultaneous Switching Noise on a Multi-Layer Ceramic BGA”, IEEE, pp. 120-122.
Jan. 1, 1996, Institute for Interconnecting and Packaging Electronic Circuits, IPC-T-50: Terms and Definitions Interconnecting and Packaging Electronic Circuits, pp. 1-101.
Dec. 1, 1996, Slater, “The Microprocessor Today”, IEEE Micro, vol. 16.6, pp. 32-44.
Dec. 1, 1996, Yu, The Future of Microprocessors, IEEE Micro, vol. 16.6, pp. 46-53.
Jan. 1, 1997, Konsowski et al., Electronic Packaging of High Speed Circuitry, pp. 1-417.
Jan. 1, 1997, Allan et al., “A Low-Cost Workstation with Enhanced Performance and I/O Capabilities”, Hewlett-Packard Journal, vol. 48.3, pp. 82-88.
Oct. 1, 1997, Pillai, “Coax Via—A Technique to Reduce Crosstalk and Enhance Impedance Match at Vias in High-Freqency Multilayer Packages Verified by FDTD and MoM Modeling”, IEEE Transactions on Microwave Theory and Techniques, vol. 35, No. 10, pp. 1981-1985.
Nov. 1, 1997, Koike et al., “High-Speed Signal Transmission at the Front of a Bookshelf Packaging System”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part B. vol. 20, No. 4, pp. 353-360.
Jan. 1, 1998, Petefish et al., “High Density Organic Flip Chip Package Substrate Technology”, IEEE 1998 Electronic Components and Technology Conference, pp. 1089-1097.
Feb. 1, 1998, Deutsch, “Electrical Characteristics of Interconnections for High-Performance Systems”, Proceedings of the IEEE, vol. 86.2, pp. 315-355.
Feb. 1, 1998, Vichot et al., “Numerical Modeling of a Clock Distribution Network for a Superconducting Multichip Module”, IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part B, vol. 21, No. 1, pp. 98-104.
Feb. 1, 1998, Institute for Interconnecting and Packaging Electronic Circuits, IPC-2221: Generic Standard on Printed Board Design, pp. 1-97.
Aug. 1, 1998, Kaires, “Radiated Emissions from Printed Circuit Board Traces Including the Effect of Vias, as a Function of Source, Termination and Board Characteristics”, IEEE International Symposium on Electromagnetic Compatibility 1998, vol. 2, pp. 872-877.
Oct. 1, 1998, Brown, Advanced Electronic Packaging with Emphasis on Multichip Modules, pp. 1-791.
Jan. 1, 1998, Low et al., “Via Design Optimisation for High Speed Device Packaging”, IEEE/CPMT Electronics Packaging Technology Conference, pp. 112-118.
Jan. 1, 1998, Lau et al., Electronic Packaging Design, Materials, Process, and Reliability, pp. 1-482.
Jan. 1, 1998, Martens, High-Frequency Characterization of Electronic Packaging, pp. 1-155.
Jan. 1, 1999, Shigeta et al., “Improved EMI Performance by Use of a Three-Terminal-Capacitor Applied to an IC Power Line”, IEEE International Symposium on Electromagnetic Compatibility, 1999, vol. 1, pp. 161-164.
Feb. 1, 1999, Intel Corporatio, AP-589: Design for EMI pp. 1-14.
Aug. 1, 1999, Erdin et al., “Mixed Circuit/Electromagnetic Analysis of Field Coupling to High Speed Interconnects in Inhomogenous Medium”, IEEE International Symposium on Electromagnetic Compatibility, 1999, vol. 1, pp. 446-449.
Aug. 1, 1999, Armstrong, “PCB Design Techniques for Lowest-Cost EMC Compliance: Part 1”, Electronics & Communication Engineering Journal, pp. 218-226.
Oct. 1, 1999, Armstrong, “PCB Design Techniques for Lowest-Cost EMC Compliance: Part 2”, Electronics & Communication Engineering Journal, pp. 185-194.
Jan. 1, 1999, Li et al., “Validation of Integrated Capacitor-Via-Planes Model”, IEEE, pp. 121-124.
Jan. 1, 1999, Yew et al., “Design and Performance Evaluation of Chip Capacitors on Microprocessor Packaging”, IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging, pp. 175-178.
Jan. 1, 2000, Chen, “Effects of 20-H Rule and Shielding Vias on Electromagnetic Radiation From Printed Circuit Boards”, IEEE pp. 193-196.
Jan. 1, 2000. Ilavarasan et al., “Current and Future EMI Challenges at Intel and How to Manage Them”, IEEE, pp. 281-283.
Jan. 1, 2000, Tadayon. “Thermal Challenges During Microprocessor Testing”, Intel Technology Journal.
Jan. 1, 2000, Dory et al., “Simultaneous Chip-Join and Underfill Assembly Technology for Flip-Chip Packaging”, Intel Technology Journal.
Jan. 1, 2000, Grayeli, “Microprocessor Packaging: Evolution and Future Challenges”, Intel Technology Journal.
Jan. 1, 2000, Viswanath et al., “Thermal Performance Challenges From Silicon to Systems”, Intel Technology Journal.
Jul. 1, 2000, Benedict, “PCB Design for EMI/EMC Compliance”, WEMPEC Seminar.
Aug. 1, 2000, Li et al., “Design and Performance Evaluation of Microprocessor Packaging Capcitors Using Integrated Capcitor-Via-Plane Model”, IEEE Transactions on Advanced Packaging, vol. 23.3, pp. 361-367.
Aug. 1, 2000, Mahajan et al., “The Evolution of Microprocessor Packaging”, Intel Technology Journal, vol. 4.3, pp. 1-10.
Aug. 1, 2000, Lii et al., “Flip-Chip Technology on Organic Pin Grid Array Packages”, Intel Technology Journal, vol. 4.3, pp. 1-9.
Aug. 1, 2000, Mencinger, “A Mechanism-Based Methodology for Processor Package Reliability Assessments”, Intel Technology Journal, vol. 4.3, pp. 1-8.
Jan. 1, 2001, Ye et al., “EMI Mitigation with Multilayer Power-Bus Stacks and Via Stitching of Reference Planes”, IEEE Transactions on Electromagnetic Compatibility, vol. 43.4, pp. 538-548.
Jan. 1, 2001, zilog.com, Product Update for Z86C02/E02/L02, Z86C04/E04/L04, Z86C08/E08/L08 to Clarify the Output Drive in Low-EMI Mode.
Aug. 1, 2001, Shim et al., “20-H Rule Modeling and Measurements”, IEEE International Symposium on Electromagnetic Compatibility 2001, vol. 2, pp. 939-942.
Sep. 1, 2001, Gisin et al., “Minimizing EMI Caused by Radially Propagating Waves Inside High Speed Digital Logic PCBs”, TELSIKS 2001, pp. 624-631.
Jan. 1, 2002, He et al., “Study of Package EMI Reduction for GHz Microprocessors”, IEEE, pp. 271-274.
Jan. 1, 2003, Muccioli et al., “A Microwave Test Fixture for Measuring Four-Terminal Passive Components from DC to 10 GHz”, Interference Technology.
Jan. 1, 2004, Sanders et al., “Comparison of MLCC and X2Y Technology for Use in Decoupling Circuits”, CARTS 2004: 24th Annual Capacitor and Resistor Technology Symposium, Mar. 29-Apr. 1.
Aug. 1, 2004, Sanders, A Better Approach to DC Power Filtering.
Mar. 21, 2005, Sanders et al., “The Quantitative Measurement of the Effectiveness of Decoupling Capacitors in Controlling Switching Transients from Microprocessors”, 25th Annual Passive Components Conference CARTS 2005 , pp. 1-16.
May 1, 2005, Montrose et al., “Analysis on the Effectiveness of the 20-H Rule for Printed-Circuit-Board Layout to Reduce Edge-Radiated Coupling”, IEEE Transactions on Electromagnetic Compatibility, vol. 47.2, pp. 227-233.
Nov. 9, 2005, Various, Various, Intel Technology Journal.
May 1, 2008, Ikami et al., “Practical analysis on 20H Rule for PCB”, 2008 Asia-Pacific Symposium on Electromagnetic Compatibility, pp. 180-183.
Apr. 26, 2012, Swigget of Prismark Partners LLC, “Product Teardown Report”, filed in ITC Investigation No. 337-TA-781.
Jan. 1, 1999, Montrose, EMC and the Printed Circuit Board—Design, Theory, and Layout Made Simple, pp. 1-325.
Dec. 18, 1996, Lamson, U.S. Appl. No. 60/033,673.
Jan. 1, 1994, Greb “An Intuitive Approach to EM Fields,” EMC Test & Design, Jan. 1991, pp. 30-33.
Jun. 1, 1986, Sakamotot, “Noiseproof Power Supplies: What's Important in EMI Removal Filters?” JEE, Jun. 1986, pp. 80-85.
Apr. 19, 1999. PCT International Search Report for PCT/US99/01040.
Jul. 16, 2002, PCT International Search Report for PCT/US91/02150.
Jun. 28, 2001, PCT International Search Report for PCT/US01/03792.
Mason, “Valor—Understanding Common Mode Noise,” Mar. 30, 1998, pp. 1-7.
David Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 10/766,000, Claims, 1-63; filed Jan. 29, 2004.
Anthony Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/443,788, Claims 1; 21-45; filed May 23, 2003.
Anthony Anthony et al., Pending specification, claims, figures for U.S Appl. No. 09/632,048, Claims 1-20; filed Aug. 3, 2000
Anthony Anthony et al., Pending specification, claims, figures for U.S. Appl. No. 09/996,355, Claims 1-73; filed Nov. 29, 2001
Willian Anthony, Pending specification, claims, figures for U.S. Appl. No. 10/023,467, Claims 1-20; filed Dec. 17, 2001
Apr. 25, 2002, Pending claims 1-40 and figures (3 pages) for U.S. Appl. No. 10/399,590; the specification is contained in WO 02/33798, filed Oct. 17, 2001, which is the published version of PCT/US01/32480, which is Neifeld Reference: X2YA0015UPCT-US, which is reference F-063 in the Information Disclosure Statement filed Apr. 23, 2004.
PCT Written Opinion of the International Search Authority.
Oct. 31, 2007, PCT Written Opinion of the International Search.
Jun. 17, 2008, PCT Interational Search Report PCT/US06/08901.
Oct. 13, 2000, Patent Abstracts of Japan, English translation of abstract for JP 2000-28665.
Related Publications (1)
Number Date Country
20120000045 A1 Jan 2012 US
Provisional Applications (7)
Number Date Country
60656910 Mar 2005 US
60661002 Mar 2005 US
60668992 Apr 2005 US
60671107 Apr 2005 US
60671532 Apr 2005 US
60674284 Apr 2005 US
60751273 Dec 2005 US
Continuations (2)
Number Date Country
Parent 12861811 Aug 2010 US
Child 13175918 US
Parent 11817634 US
Child 12861811 US