Claims
- 1. A method for manufacturing boron-containing films, comprising the steps of:
- arranging a plurality of semiconductor wafers on a wafer boat such that the surfaces of said wafers to be processed for forming films thereon are exposed;
- housing said wafer boat in a process tube made of quartz;
- exhausting the inside of said process tube to form a vacuum therein;
- heating said wafers in said process tube in a range of 350.degree. C.-430.degree. C.;
- introducing a reaction gas composed of BF.sub.3, Si, P and O into said process tube, said reaction gas containing a BF.sub.3 gas component of 5.482-19.187 SCCM per square meter of unit surface area of a wafer to be processed;
- allowing said reaction gas to directly react with said wafers; and
- forming borophosphosilicate glass films having resistance to humidity absorption, on said wafers.
- 2. The method for manufacturing boron-containing films according to claim 1, wherein the internal pressure of the process tube is controlled in a range of 0.2-0.3 Torr.
- 3. The method for manufacturing boron-containing films according to claim 1, wherein the Si containing component of said reaction gas is selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6, SiH.sub.2 Cl.sub.2, SiCl.sub.4, and tetraethoxysilane;
- the P containing component of said reaction gas is selected from the group consisting of POCl.sub.3, PH.sub.3, (CH.sub.3).sub.3 P, (CH.sub.3 O).sub.3 P, (CH.sub.3).sub.3 OP, and (CH.sub.3 O).sub.3 OP; and
- the O containing component of said reaction gas is selected from the group consisting of O.sub.2, N.sub.2 O, and NO.
- 4. The method for manufacturing boron-containing films according to claim 3, wherein said reaction gas contains a PH.sub.3 gas component of 0.822-1.644 SCCM per square meter of unit surface area of a wafer to be processed.
- 5. The method for manufacturing boron-containing films according to claim 3, wherein said reaction gas contains a SiH.sub.4 gas component of 10.964-27.41 SCCM per square meter of unit surface area of a wafer to be processed.
- 6. The method for manufacturing boron-containing films according to claim 3, wherein said reaction gas contains an O.sub.2 gas component of 24-25 SCCM per square meter of unit surface area of a wafer to be processed.
Priority Claims (1)
Number |
Date |
Country |
Kind |
63-77231 |
Mar 1988 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/504,699, filed on Apr. 5, 1990, now abandoned which is a continuation of Ser. No. 07/330,269 filed Mar. 29, 1989, now abandoned.
US Referenced Citations (3)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0107003 |
Jun 1985 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 133-136, 168-170, 177, 182-184, 190. |
Continuations (2)
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Number |
Date |
Country |
Parent |
504699 |
Apr 1990 |
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Parent |
330269 |
Mar 1989 |
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