Claims
- 1. A method of laser processing a multi-level, multi-material device including a substrate, a microstructure and a multi-layer stack, the stack having inner layers which separate the microstructure from the substrate, the method comprising:
a) generating a pulsed laser beam having a predetermined wavelength and including at least one laser pulse having a predetermined characteristic comprising at least one of a temporal shape and spatial shape; b) relatively positioning the microstructure and a waist of the laser beam in three-dimensional space based on at least a position measurement obtained at a reference location wherein the position measurement is used to obtain a prediction of a common location of the microstructure and the beam waist; and c) irradiating the microstructure with the at least one laser pulse based on the predicted common location at a time wherein the beam waist and the microstructure substantially coincide, wherein the microstructure is cleanly removed with substantially maximum pulse energy density at the microstructure and wherein an undesirable change to the inner layers of the stack and substrate is avoided.
- 2. The method of claim 1 wherein the multi-level device is a damascene semiconductor memory.
- 3. The method of claim 1 wherein the predetermined characteristic is a pulse rise time less than 2 nanoseconds.
- 4. The method of claim 3 wherein the rise time is less than 1 nanosecond.
- 5. The method of claim 1 wherein the predetermined characteristic is a substantially square pulse having a duration of less than about 10 nanoseconds and a rise time less than about 2 nanoseconds.
- 6. The method of claim 1 wherein the predetermined characteristic is based on a model of laser pulse interactions with materials of the multi-level, multi-material device.
- 7. The method of claim 3 wherein the stack has at least one outer dielectric layer covering the microstructure, and wherein the rise time initiates cracking of the at least one outer layer and avoids damage of the inner layers of the stack.
- 8. The method of claim 1 wherein the inner layers include at least 2 pairs of dielectric layers.
- 9. The method of claim 8 wherein the inner layers include at least 4 pairs of dielectric layers.
- 10. The method of claim 1 wherein pulse energy density at the substrate is less than a damage threshold of the substrate and wherein the maximum pulse energy density at the microstructure is greater than the damage threshold of the substrate.
- 11. The method of claim 1 wherein the predetermined characteristic is 3D irradiance profile having a beam waist, Wy0, which approximates a narrow microstructure dimension, the irradiance profile being characterized by a relative reduction in energy density at the inner layers and the substrate caused by beam divergence, whereby the energy density at the substrate is substantially reduced by at least the beam divergence and inner layer reflections.
- 12. The method of claim 1 wherein the substrate is a silicon substrate.
- 13. The method of claim 1 wherein the substrate is a silicon substrate and the predetermined wavelength is about 1.064 μm.
- 14. The method of claim 6 wherein the predetermined wavelength is below an absorption edge of the substrate and pulse energy density at the substrate is reduced by at least one of a plurality of predetermined factors of the model including: (a) beam divergence; (b) stack surface reflection; (c) beam diffraction; (d) stack multiple scattering; (e) internal stack reflection; (f) multi-layer interference; and (g) non-linear absorption within the microstructure.
- 15. The method of claim 1 wherein peak pulse energy density at the substrate is less than about {fraction (1/10)} of the maximum pulse energy density at the microstructure.
- 16. The method of claim 8 wherein the dielectric layers comprise silicon nitride and silicon dioxide.
- 17. The method of claim 1 wherein the predetermined characteristic is based on a physical property of a material of the mufti-material device.
- 18. The method of claim 1 wherein the predetermined wavelength is less than 1.2 μm.
- 19. The method of claim 18 wherein the predetermined wavelength is less than an absorption edge of the substrate.
- 20. The method of claim 1 wherein the predetermined characteristic comprises a non-circular spatial profile based on a preselected numerical aperture and shape of a spot wherein the spot and the microstructure are substantially correlated in at least one dimension, whereby a fraction of laser energy delivered to the microstructure is increased and irradiance of the stack and the substrate with the at least one laser pulse is decreased.
- 21. The method of claim 1 wherein a plurality of closely-spaced pulses irradiate the microstructure during the step of relatively positioning.
- 22. The method of claim 21 wherein the pulses have a duration in the range of a few picoseconds to several nanoseconds.
- 23. The method of claim 21 wherein at least one of the pulses is delayed by a delay line and wherein spacing between the pulses is in the range of about 20-30 nanoseconds.
- 24. The method of claim 21 wherein pulse energy of the pulses is about 50% to 70% of pulse energy used for processing the microstructure with a single laser pulse.
- 25. The method of claim 1 wherein the device includes a plurality of microstructures to be processed and wherein the method further comprises repeating steps a), b) and c) until all of the microstructures are processed.
- 26. The method of claim 1 wherein pulse energy density at the microstructure is in the range of about 0.1 -5 μjoules over an area of less than about 10-20 square microns on the microstructure.
- 27. The method of claim 26 wherein the range is about 0.1-3 μjoules.
- 28. The method of claim 1 wherein the step of generating includes the step of shifting a first wavelength of the laser beam to the predetermined wavelength, wherein pulse energy is coupled into the microstructure more efficiently at the predetermined wavelength than at the first wavelength while avoiding damage to the inner layers and stack.
- 29. The method of claim 1 wherein the predetermined wavelength is within a spectral region wherein stack intensity reflection is substantially increased when compared to at least one other wavelength.
- 30. The method of claim 29 wherein the stack intensity reflection exceeds about 60%.
- 31. The method of claim 30 wherein the stack intensity reflection exceeds about 90%.
- 32. The method of claim 29 wherein the predetermined wavelength is less than the absorption edge of the substrate.
- 33. The method of claim 1 further comprising:
(1) obtaining information identifying microstructures designated for removal; (2) measuring a first set of reference locations to obtain three-dimensional reference data; (3) generating a trajectory based on at least the three-dimensional reference data to predict a plurality of beam waist and microstructure locations; (4) updating the prediction during the step of relatively positioning based on updated position information, the updated position information being obtained during the step of relatively positioning.
- 34. The method of claim 33 wherein the updated position information obtained during the step of relatively positioning includes data from a position encoder.
- 35. The method of claim 33 wherein the updated position information obtained during the step of relatively positioning includes data from an optical sensor.
- 36. The method of claim 1 wherein the reference location is an alignment target of the multi-material device, the alignment target being covered by at least one upper layer of the stack.
- 37. The method of claim 1 wherein the predetermined characteristic is irradiance profile at the beam waist.
- 38. The method of claim 37 wherein the irradiance profile approximates a dimension of the microstructure such that a significant percent of laser energy is coupled to the microstructure and background irradiance is reduced.
- 39. The method of claim 38 wherein the dimension of the microstructure is less than 1 μm.
- 40. The method of claim 38 wherein the percent is at least 60%.
- 41. The method of claim 37 wherein the irradiance profile is an elliptical Gaussian.
- 42. The method of claim 37 wherein the irradiance profile is a top hat along a length of the microstructure and substantially Gaussian along a width of the microstructure.
- 43. The method of claim 37 wherein the irradiance profile is substantially diffraction limited with an M-squared factor of less than about 1.1.
- 44. The method of claim 1 wherein the microstructure is a metal link.
- 45. The method of claim 44 wherein the metal link has a first dimension of less than 1 μm and wherein the predetermined characteristic is a laser spot size less than about 1.5 μm in the first dimension.
- 46. The method of claim 1 wherein the substrate is a silicon substrate and wherein pulse energy density at the substrate is less than about {fraction (1/100)} the pulse energy density at the microstructure.
- 47. A system of laser processing a multi-level, multi-material device including a substrate, a microstructure and a multi-layer stack, the stack having inner layers which separate the microstructure from the substrate, the system comprising:
means for generating a pulsed laser beam having a predetermined wavelength and including at least one laser pulse having a predetermined characteristic comprising at least one of a temporal shape and spatial shape; means for relatively positioning the microstructure and a waist of the laser beam in three-dimensional space based on at least a position measurement obtained at a reference location wherein the position measurement is used to obtain a prediction of a common location of the microstructure and the beam waist; and means for irradiating the microstructure with the at least one laser pulse based on the predicted common location at a time wherein the beam waist and the microstructure substantially coincide, wherein the microstructure is cleanly removed with substantially maximum pulse energy density at the microstructure and wherein an undesirable change to the inner layers of the stack and substrate is avoided.
- 48. The system of claim 47 wherein the multi-level device is a damascene semiconductor memory.
- 49. The system of claim 47 wherein the predetermined characteristic is a pulse rise time less than 2 nanoseconds.
- 50. The system of claim 49 wherein the rise time is less than 1 nanosecond.
- 51. The system of claim 47 wherein the predetermined characteristic is a substantially square pulse having a duration of less than about 10 nanoseconds and a rise time less than about 2 nanoseconds.
- 52. The system of claim 47 wherein the predetermined characteristic is based on a model of laser pulse interactions with materials of the multi-level, multi-material device.
- 53. The system of claim 49 wherein the stack has at least one dielectric outer layer covering the microstructure, and wherein the rise time initiates cracking of the at least one outer layer and avoids damage of the inner layers of the stack.
- 54. The system of claim 47 wherein the inner layers include at least 2 pairs of dielectric layers.
- 55. The system of claim 54 wherein the inner layers include at least 4 pairs of dielectric layers.
- 56. The system of claim 47 wherein pulse energy density at the substrate is less than a damage threshold of the substrate and wherein the maximum pulse energy density at the microstructure is greater than the damage threshold of the substrate.
- 57. The system of claim 47 wherein the predetermined characteristic is 3D irradiance profile having a beam waist, Wy0, which approximates a narrow microstructure dimension, the irradiance profile being characterized by a relative reduction in energy density at the inner layers and the substrate caused by beam divergence, whereby the energy density at the substrate is substantially reduced by at least the beam divergence and inner layer reflections.
- 58. The system of claim 47 wherein the substrate is a silicon substrate.
- 59. The system of claim 47 wherein the substrate is a silicon substrate and the predetermined wavelength is about 1.064 μm.
- 60. The system of claim 52 wherein the predetermined wavelength is below an absorption edge of the substrate and pulse energy density at the substrate is reduced by at least one of a plurality of predetermined factors of the model including: (a) beam divergence; (b) stack surface reflection; (c) beam diffraction; (d) stack multiple scattering; (e) internal stack reflection; (f) multi-layer interference; and (g) non-linear absorption within the microstructure.
- 61. The system of claim 47 wherein peak pulse energy density at the substrate is less than about {fraction (1/10)} of the maximum pulse energy density at the microstructure.
- 62. The system of claim 54 wherein the dielectric layers comprise silicon nitride and silicon dioxide.
- 63. The system of claim 47 wherein the predetermined characteristic is based on a physical property of a material of the multi-material device.
- 64. The system of claim 47 wherein the predetermined wavelength is less than 1.2 μm.
- 65. The system of claim 64 wherein the predetermined wavelength is less than an absorption edge of the substrate.
- 66. The system of claim 47 wherein the predetermined characteristic comprises a non-circular spatial profile based on a preselected numerical aperture and shape of a spot wherein the spot and the microstructure are substantially correlated in at least one dimension, whereby a fraction of laser energy delivered to the microstructure is increased and irradiance of the stack and the substrate with the at least one laser pulse is decreased.
- 67. The system of claim 47 wherein a plurality of closely-spaced pulses irradiate the microstructure by the means for irradiating.
- 68. The system of claim 67 wherein the pulses have a duration in the range of a few picoseconds to several nanoseconds.
- 69. The system of claim 67 wherein at least one of the pulses is delayed by a delay line and wherein spacing between the pulses is in the range of about 20-30 nanoseconds.
- 70. The system of claim 67 wherein pulse energy of the pulses is about 50% to 70% of pulse energy used for processing the microstructure with a single laser pulse.
- 71. The system of claim 47 wherein the device includes a plurality of microstructures to be processed by the system.
- 72. The system of claim 47 wherein pulse energy density at the microstructure is in the range of about 0.1-5 μjoules over an area of less than about 10-20 square microns on the microstructure.
- 73. The system of claim 72 wherein the range is about 0.1-3 μjoules.
- 74. The system of claim 47 wherein the means for generating includes means for shifting a first wavelength of the laser beam to the predetermined wavelength, wherein pulse energy is coupled into the microstructure more efficiently at the predetermined wavelength than at the first wavelength while avoiding damage to the inner layers and stack.
- 75. The system of claim 47 wherein the predetermined wavelength is within a spectral region wherein stack intensity reflection is substantially increased when compared to at least one other wavelength.
- 76. The system of claim 75 wherein the stack intensity reflection exceeds about 60%.
- 77. The system of claim 76 wherein the stack intensity reflection exceeds about 90%.
- 78. The system of claim 75 wherein the predetermined wavelength is less than the absorption edge of the substrate.
- 79. The system of claim 47 further comprising:
(1) means for obtaining information identifying microstructures designated for removal; (2) means for measuring a first set of reference locations to obtain three-dimensional reference data; (3) means for generating a trajectory based on at least the three-dimensional reference data to predict a plurality of beam waist and microstructure locations; (4) means for updating the prediction based on updated position information.
- 80. The system of claim 79 wherein the updated position information includes data from a position encoder.
- 81. The system of claim 79 wherein the updated position information includes data from an optical sensor.
- 82. The system of claim 47 wherein the reference location is an alignment target of the multi-material device, the alignment target being covered by at least one upper layer of the stack.
- 83. The system of claim 47 wherein the predetermined characteristic is irradiance profile at the beam waist.
- 84. The system of claim 83 wherein the irradiance profile approximates a dimension of the microstructure such that a significant percent of laser energy is coupled to the microstructure and background irradiance is reduced.
- 85. The system of claim 84 wherein the dimension of the microstructure is less than 1 μm.
- 86. The system of claim 84 wherein the percent is at least 60%.
- 87. The system of claim 83 wherein the irradiance profile is an elliptical Gaussian.
- 88. The system of claim 83 wherein the irradiance profile is a top hat along a length of the microstructure and substantially Gaussian along a width of the microstructure.
- 89. The system of claim 83 wherein the irradiance profile is substantially diffraction limited with an M-squared factor of less than about 1.1.
- 90. The system of claim 47 wherein the microstructure is a metal link.
- 91. The system of claim 90 wherein the metal link has a first dimension of less than 1 μm and wherein the predetermined characteristic is a laser spot size less than about 1.5 μm in the first dimension.
- 92. The system of claim 47 wherein the substrate is a silicon substrate and wherein pulse energy density at the substrate is less than about {fraction (1/100)} the pulse energy density at the microstructure.
- 93. A method of laser processing a multi-level, multi-material device including a substrate, a microstructure and a multi-layer stack, the stack having inner dielectric layers which separate the microstructure from the substrate, the method comprising:
generating a pulsed laser beam having a predetermined wavelength and including at least one laser pulse wherein at least reflections of the laser beam by the layers of the stack substantially reduce pulse energy density at the substrate relative to at least one other wavelength; and processing the microstructure with the at least one laser pulse wherein pulse energy density at the microstructure is sufficient to remove the microstructure while avoiding damage to the substrate and the inner layers of the stack.
- 94. The method of claim 93 wherein the predetermined wavelength is less than an absorption edge of the substrate.
- 95. The method of claim 93 wherein the predetermined wavelength is in the range of about 0.4 μm-1.55 μm.
- 96. The method of claim 93 wherein the predetermined wavelength is in the range of about 0.35 μm-1.55 μm.
- 97. The method of claim 93 wherein the predetermined wavelength is less than 1.2 μm.
- 98. The method of claim 93 wherein the substrate is a silicon substrate and the microstructure is a metal microstructure.
- 99. The method of claim 98 wherein the metal of the microstructure comprises copper.
- 100. The method of claim 93 wherein pulse energy density at the substrate is further reduced with a predetermined characteristic of the at least one pulse.
- 101. The method of claim 100 wherein the predetermined characteristic is based on a model of laser pulse material interaction.
- 102. The method of claim 101 wherein the model is a thermal model.
- 103. The method of claim 101 wherein the model is a multi-parameter model.
- 104. The method of claim 93 wherein the step of generating includes the step of shifting the wavelength of the laser beam from a first wavelength to the predetermined wavelength wherein the predetermined wavelength is based on material characteristics comprising at least one of: (1) coupling characteristics of the microstructure, (2) multi-layer interference, and (3) substrate reflectivity.
- 105. The method of claim 104 wherein the predetermined wavelength is a shifted wavelength below an absorption edge of the substrate.
- 106. A system of laser processing a multi-level, multi-material device including a substrate, a microstructure and a multi-layer stack, the stack having inner dielectric layers which separate the microstructure from the substrate, the system comprising:
means for generating a pulsed laser beam having a predetermined wavelength and including at least one laser pulse wherein at least reflections of the laser beam by the layers of the stack substantially reduce pulse energy density at the substrate relative to at least one other wavelength beyond the absorption edge; and means for processing the microstructure with the at least one laser pulse wherein pulse energy density at the microstructure is sufficient to remove the microstructure while avoiding damage to the substrate and the inner layers of the stack.
- 107. The system of claim 106 wherein the predetermined wavelength is less than an absorption edge of the substrate.
- 108. The system of claim 106 wherein the predetermined wavelength is in the range of about 0.4 μm-1.55 μm.
- 109. The system of claim 106 wherein the predetermined wavelength is in the range of about 0.35 μm-1.55 μm.
- 110. The system of claim 106 wherein the predetermined wavelength is less than 1.2 μm.
- 111. The system of claim 106 wherein the substrate is a silicon substrate and the microstructure is a metal microstructure.
- 112. The system of claim 111 wherein the metal of the microstructure comprises copper.
- 113. The system of claim 106 wherein pulse energy density at the substrate is further reduced with a predetermined characteristic of the at least one pulse.
- 114. The system of claim 113 wherein the predetermined characteristic is based on a model of laser pulse material interaction.
- 115. The system of claim 114 wherein the model is a thermal model.
- 116. The system of claim 114 wherein the model is a multi-parameter model.
- 117. The system of claim 106 wherein the means for generating includes means for shifting the wavelength of the laser beam from a first wavelength to the predetermined wavelength wherein the predetermined wavelength is based on material characteristics comprising at least one of: (1) coupling characteristics of the microstructure, (2) multi-layer interference, and (3) substrate reflectivity.
- 118. The system of claim 117 wherein the predetermined wavelength is a shifted wavelength below an absorption edge of the substrate.
- 119. A method for modeling interactions of a pulsed laser beam including at least one laser pulse with a three-dimensional device including a substrate, a predetermined microstructure formed on the substrate and a plurality of other structures formed on the substrate, the method comprising:
providing information regarding material of the structures including the predetermined microstructure and the substrate; determining optical propagation characteristics of at least a portion of the laser beam not absorbed by the predetermined microstructure based on the information; and determining at least one characteristic of the at least one pulse based on the optical propagation characteristics.
- 120. The method of claim 119 wherein the information also regards spacing of the structures including the predetermined microstructure and the substrate.
- 121. A system for modeling interactions of a pulsed laser beam including at least one laser pulse with a three-dimensional device including a substrate, a predetermined microstructure formed on the substrate and a plurality of other structures formed on the substrate, the system comprising:
means for providing information regarding material of the structures including the predetermined microstructure and the substrate; means for determining optical propagation characteristics of at least a portion of the laser beam not absorbed by the predetermined microstructure based on the information; and means for determining at least one characteristic of the at least one pulse based on the optical propagation characteristics.
- 122. The system of claim 121 wherein the information also regards spacing of the structures including the predetermined microstructure and the substrate.
- 123. A method for modeling interactions of a pulsed laser beam including at least one laser pulse with a three-dimensional device including a substrate, a predetermined microstructure formed on the substrate and a plurality of other structures formed on the substrate, the method comprising:
providing information regarding material and spacing of the structures including the predetermined microstructure and the substrate; determining optical propagation characteristics of at least a portion of the laser beam not absorbed by the predetermined microstructure based on the information; and determining at least one characteristic of the at least one pulse which avoids undesirable changes in electrical or physical characteristics of the substrate and the other structures based on the optical propagation characteristics.
- 124. The method as claimed in claim 123 wherein the interactions are selected from a group comprising: reflections from at least one surface of the structures, internal reflections, polarization, interference effects, near field diffraction, scattering and absorption.
- 125. The method as claimed in claim 123 wherein the step of determining optical propagation characteristics includes correlating irradiance of a structure neighboring the predetermined microstructure with a laser spot dimension.
- 126. A system for modeling interactions of a pulsed laser beam including at least one laser pulse with a three-dimensional device including a substrate, a predetermined microstructure formed on the substrate and a plurality of other structures formed on the substrate, the system comprising:
means for providing information regarding material and spacing of the structures including the predetermined microstructure and the substrate; means for determining optical propagation characteristics of at least a portion of the laser beam not absorbed by the predetermined microstructure based on the information; and means for determining at least one characteristic of the at least one pulse which avoids undesirable changes in electrical or physical characteristics of the substrate and the other structures based on the optical propagation characteristics.
- 127. The system as claimed in claim 126 wherein the interactions are selected from a group comprising: reflections from at least one surface of the structures, internal reflections, polarization, interference effects, near field diffraction, scattering and absorption.
- 128. The system as claimed in claim 126 wherein the means for determining optical propagation characteristics includes means for correlating irradiance of a structure neighboring the predetermined microstructure with a laser spot dimension.
- 129. A method of laser processing a multi-level, multi-material device including a substrate, a microstructure and a multi-layer stack, the stack having inner layers which separate the microstructure from the substrate, the method comprising:
generating a pulsed laser beam having a predetermined wavelength and including at least one laser pulse having a predetermined characteristic wherein:
a) the predetermined wavelength is below an absorption edge of the substrate; and b) wherein the at least one pulse has duration less than about 10 nanoseconds, and a repetition rate of 10 KHz or higher; relatively positioning the microstructure and a waist of the laser beam in three-dimensional space based on at least a position measurement obtained at a reference location wherein the position measurement is used to obtain a prediction of a common location of the microstructure and the beam waist; and irradiating the microstructure with the at least one laser pulse based on the predicted common location at a time wherein the beam waist and the microstructure substantially coincide, wherein the microstructure is cleanly removed with substantially maximum pulse energy density at the microstructure and wherein an undesirable change to the inner layers of the stack and substrate is avoided.
- 130. The method of claim 129 wherein the predetermined characteristic includes a q-switched pulse shape.
- 131. The method of claim 130 wherein the q-switched pulse shape is generated with a microlaser.
- 132. The method of claim 129 wherein the pulse duration of the at least one laser pulse is in the range of 1-5 nanoseconds.
- 133. The method of claim 129 wherein a plurality of pulses are generated and delayed by a predetermined delay based upon a physical property of a material of the multi-material device.
- 134. The method of claim 130 wherein the predetermined wavelength is about 1.064 microns.
- 135. A system of laser processing a multi-level, multi-material device including a substrate, a microstructure and a multi-layer stack, the stack having inner layers which separate the microstructure from the substrate, the system comprising:
means for generating a pulsed laser beam having a predetermined wavelength and including at least one laser pulse having a predetermined characteristic wherein:
a) the predetermined wavelength is below an absorption edge of the substrate; and b) wherein the at least one pulse has duration less than about 10 nanoseconds, and a repetition rate of 10 KHz or higher; means for relatively positioning the microstructure and a waist of the laser beam in three-dimensional space based on at least a position measurement obtained at a reference location wherein the position measurement is used to obtain a prediction of a common location of the microstructure and the beam waist; and means for irradiating the microstructure with the at least one laser pulse based on the predicted common location at a time wherein the beam waist and the microstructure substantially coincide, wherein the microstructure is cleanly removed with substantially maximum pulse energy density at the-microstructure and wherein an undesirable change to the inner layers of the stack and substrate is avoided.
- 136. The system of claim 135 wherein the predetermined characteristic includes a q-switched pulse shape.
- 137. The system of claim 136 wherein the q-switched pulse shape is generated with a microlaser.
- 138. The system of claim 135 wherein the pulse duration of the at least one laser pulse is in the range of 1-5 nanoseconds.
- 139. The system of claim 135 wherein a plurality of pulses are generated and delayed by a predetermined delay based upon a physical property of a material of the multi-material device.
- 140. The system of claim 135 wherein the predetermined wavelength is about 1.064 microns.
- 141. A multi-level, multi-material device comprising:
a substrate; a microstructure; a multi-layer stack having inner layers which separate the microstructure from the substrate, wherein at least one of the inner layers has a predetermined physical parameter based on interactions of a pulsed laser beam with the stack, the laser beam having a predetermined wavelength, wherein undesirable changes to the substrate and the inner layers of the stack are avoided during laser processing with the pulsed-laser beam.
- 142. The device of claim 141 wherein the predetermined physical parameter include at least one of layer thickness, layer material, and index of refraction.
- 143. The device of claim 141 wherein the stack includes a quarter-wave stack of dielectric layers.
- 144. The device of claim 141 wherein the stack includes a precision spacer layer located between layers of the stack.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. provisional application Serial No. 60/279,644, filed Mar. 29, 2001, entitled “Method and System for Severing Highly Conductive Micro-Structures.” This application is related to U.S. patent application Ser. No. ______, filed on the same day as this application, entitled “Method and System for Processing One or More Microstructures of a Multi-Material Device.”
Provisional Applications (1)
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Number |
Date |
Country |
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60279644 |
Mar 2001 |
US |