Patent Application
20230059495
The present disclosure relates to semiconductor device fabrication.
Plasma etching processes are often used in the manufacture of semiconductor devices on semiconductor wafers. In the plasma etching process, a semiconductor wafer that includes semiconductor devices under manufacture is exposed to a plasma generated within a plasma processing volume. The plasma interacts with material(s) on the semiconductor wafer so as to remove material(s) from the semiconductor wafer and/or modify material(s) to enable their subsequent removal from the semiconductor wafer. The plasma can be generated using specific reactant gases that will cause constituents of the plasma to interact with the material(s) to be removed/modified from the semiconductor wafer, without significantly interacting with other materials on the wafer that are not to be removed/modified. The plasma is generated by using radiofrequency signals to energize the specific reactant gases. These radiofrequency signals are transmitted through the plasma processing volume that contains the reactant gases, with the semiconductor wafer held in exposure to the plasma processing volume. The transmission paths of the radiofrequency signals through the plasma processing volume can affect how the plasma is generated within the plasma processing volume. For example, the reactant gases may be energized to a greater extent in regions of the plasma processing volume where larger amounts of radiofrequency signal power is transmitted, thereby causing spatial non-uniformities in the plasma characteristics throughout the plasma processing volume. The spatial non-uniformities in plasma characteristics can manifest as spatial non-uniformity in ion density, ion energy, and/or reactive constituent density, among other plasma characteristics. The spatial non-uniformities in plasma characteristics can correspondingly cause spatial non-uniformities in plasma processing results on the semiconductor wafer. Therefore, the manner in which radiofrequency signals are transmitted through the plasma processing volume can have an affect on the uniformity of plasma processing results on the semiconductor wafer. It is within this context that the present disclosure arises.
In an example embodiment, a plasma processing system is disclosed. The plasma processing system includes an electrode having a substantially cylindrical shape defined by a top surface, a bottom surface, and an outer side surface. The plasma processing system also includes a ceramic layer formed on the top surface of the electrode. The ceramic layer is configured to receive and support a semiconductor wafer. The plasma processing system also includes a radiofrequency signal generator electrically connected through an impedance matching system to the electrode. The radiofrequency signal generator is configured to generate and supply radiofrequency signals to the electrode. The plasma processing system also includes a fixed outer support flange formed to circumscribe the outer side surface of the electrode. The fixed outer support flange has a fixed spatial relationship relative to the electrode. The fixed outer support flange has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The fixed outer support flange is electrically connected to a reference ground potential. The plasma processing system also includes an articulating outer support flange formed to circumscribe the fixed outer support flange. The articulating outer support flange has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The vertical portion of the articulating outer support flange is positioned concentrically outside of the vertical portion of the fixed outer support flange. The articulating outer support flange is spaced apart from the fixed outer support flange, such that the articulating outer support flange is vertically moveable relative to the fixed outer support flange. The plasma processing system also includes a plurality of electrically conductive straps. Each of the plurality of electrically conductive straps has a first end portion connected to the horizontal portion of the articulating outer support flange, and a second end portion connected to the horizontal portion of the fixed outer support flange.
In an example embodiment, a ground return assembly for a plasma processing system is disclosed. The ground return assembly includes a fixed outer support flange formed to circumscribe an electrode within the plasma processing system, and have a fixed spatial relationship relative to the electrode. The fixed outer support flange has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The ground return assembly also includes an articulating outer support flange formed to circumscribe the fixed outer support flange. The articulating outer support flange has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The vertical portion of the articulating outer support flange is positioned concentrically outside of the vertical portion of the fixed outer support flange. The articulating outer support flange is spaced apart from the fixed outer support flange, such that the articulating outer support flange is moveable along the vertical portion of the fixed outer support flange. The ground return assembly also includes a plurality of electrically conductive straps. Each of the plurality of electrically conductive straps has a first end portion connected to the articulating outer support flange, and a second end portion connected to the fixed outer support flange.
In an example embodiment, a plasma processing system is disclosed. The plasma processing system includes an electrode formed of electrically conductive material. The electrode has a substantially cylindrical shape defined by a top surface, a bottom surface, and an outer side surface. The plasma processing system also includes a ceramic layer formed on the top surface of the electrode. The ceramic layer is configured to receive and support a semiconductor wafer. The plasma processing system also includes a facilities plate formed of electrically conductive material. The bottom surface of the electrode is physically and electrically connected to a top surface of the facilities plate. The plasma processing system also includes a radiofrequency signal supply shaft formed of electrically conductive material. An upper end of the radiofrequency signal supply shaft is physically and electrically connected to a bottom surface of the facilities plate. The plasma processing system also includes a radiofrequency signal supply rod formed of electrically conductive material. A lower end of the radiofrequency signal supply shaft is physically and electrically connected to a delivery end of the radiofrequency signal supply rod. The plasma processing system also includes a radiofrequency signal generator electrically connected through an impedance matching system to a supply end of the radiofrequency signal supply rod. The plasma processing system also includes a tube disposed around the radiofrequency signal supply rod. The tube is formed of electrically conductive material. The tube has an inner wall separated from the radiofrequency signal supply rod by air along a full length of the tube.
In an example embodiment, a radiofrequency signal supply structure for a plasma processing system is disclosed. The radiofrequency signal supply structure includes a radiofrequency signal supply rod formed of electrically conductive material. The radiofrequency signal supply rod has a supply end and a delivery end. The supply end of the radiofrequency signal supply rod is configured for connection to an impedance matching system disposed between the radiofrequency signal supply rod and a radiofrequency signal generator. the radiofrequency signal supply structure also includes a tube disposed around the radiofrequency signal supply rod. The tube is formed of electrically conductive material. The tube has an inner wall separated from the radiofrequency signal supply rod by air along a full length of the tube.
In the following description, numerous specific details are set forth in order to provide an understanding of embodiments of the present disclosure. It will be apparent, however, to one skilled in the art that embodiments the present disclosure may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present disclosure.
In plasma etching systems for semiconductor wafer fabrication, spatial variation of etching results across the semiconductor wafer can be characterized by radial etch uniformity and azimuthal etch uniformity. Radial etch uniformity can be characterized by the variation in etch rate as a function of radial position on the semiconductor wafer, extending outward from the center of the semiconductor wafer to the edge of the semiconductor wafer at a given azimuthal position on the semiconductor wafer. And, azimuthal etch uniformity can be characterized by the variation in etch rate as a function of azimuthal position on the semiconductor wafer, about the center of the semiconductor wafer, at a given radial position on the semiconductor wafer. In some plasma processing systems, such as in the system described herein, the semiconductor wafer is positioned on an electrode from which radiofrequency signals emanate to generate a plasma within a plasma generation region overlying the semiconductor wafer, with the plasma having characteristics controlled to cause a prescribed etching process to occur on the semiconductor wafer.
The radiofrequency signals that emanate from the electrode beneath the semiconductor wafer travel through the plasma generation region overlying the semiconductor wafer to reach surrounding electrical reference ground potential return paths. The spatial arrangement and configuration of these surrounding electrical reference ground potential return paths can affect how the radiofrequency signals spatially travel through the plasma generation region and can affect the impedance seen by the radiofrequency signals, which in turns affects both the radiofrequency signal power that is delivered to the plasma and the spatial variation of the plasma characteristics across the plasma generation region. Various system are disclosed herein that provide improvements in both the configuration and control of radiofrequency signal reference ground return paths within a plasma processing system, so as to provide corresponding improvements in uniformity of semiconductor processing results across the wafer, including improvements in both radial etch uniformity and azimuthal etch uniformity across the semiconductor wafer.
In some embodiments, the semiconductor wafer W is a semiconductor wafer undergoing a fabrication procedure. For ease of discussion, the semiconductor wafer W is referred to as wafer W hereafter. However, it should be understood that in various embodiments, the wafer W can be essentially any type of substrate that is subjected to a plasma-based fabrication process. For example, in some embodiments, the wafer W as referred to herein can be a substrate formed of silicon, sapphire, GaN, GaAs or SiC, or other substrate materials, and can include glass panels/substrates, metal foils, metal sheets, polymer materials, or the like. Also, in various embodiments, the wafer W as referred to herein may vary in form, shape, and/or size. For example, in some embodiments, the wafer W referred to herein may correspond to a circular-shaped semiconductor wafer on which integrated circuit devices are manufactured. In various embodiments, the circular-shaped wafer W can have a diameter of 200 mm (millimeters), 300 mm, 450 mm, or of another size. Also, in some embodiments, the wafer W referred to herein may correspond to a non-circular substrate, such as a rectangular substrate for a flat panel display, or the like, among other shapes.
The plasma processing system 100 includes an electrode 109 positioned on a facilities plate 111. In some embodiments, the electrode 109 and the facilities plate 111 are formed of aluminum. However, in other embodiments, the electrode 109 and the facilities plate 111 can be formed of another electrically conductive material that has sufficient mechanical strength and that has compatible thermal and chemical performance characteristics. A ceramic layer 110 is formed on a top surface of the electrode 109. In some embodiments, the ceramic layer has a vertical thickness of about 1.25 millimeters (mm), as measured perpendicular to the top surface of the electrode 109. However, in other embodiments, the ceramic layer 110 can have a vertical thickness that is either greater than or less than 1.25 mm. The ceramic layer 110 is configured to receive and support the wafer W during performance of plasma processing operations on the wafer W. In some embodiments, the top surface of the electrode 190 that is located radially outside of the ceramic layer 110 and the peripheral side surfaces of the electrode 109 are covered with a spray coat of ceramic.
The ceramic layer 110 includes an arrangement of one or more clamp electrodes 112 for generating an electrostatic force to hold the wafer W to the top surface of the ceramic layer 110. In some embodiments, the ceramic layer 110 includes an arrangement of two clamp electrodes 112 that operate in a bipolar manner to provide a clamping force to the wafer W. The clamp electrodes 112 are connected to a direct current (DC) supply 117 that generates a controlled clamping voltage to hold the wafer W against the top surface of the ceramic layer 110. Electrical wires 119A, 119B are connected between the DC supply 117 and the facilities plate 111. Electrical wires/conductors are routed through the facilities plate 111 and the electrode 109 to electrically connect the wires 119A, 119B to the clamp electrodes 112. The DC supply 117 is connected to a control system 120 through one or more signal conductors 121.
The electrode 109 also includes an arrangement of temperature control fluid channels 123 through which a temperature control fluid is flowed to control a temperature of the electrode 109 and in turn control a temperature of the wafer W. The temperature control fluid channels 123 are plumbed (fluid1y connected) to ports on the facilities plate 111. Temperature control fluid supply and return lines are connected to these ports on the facilities plate 111 and to a temperature control fluid circulation system 125, as indicated by arrow 126. The temperature control fluid circulation system 125 includes a temperature control fluid supply, a temperature control fluid pump, and a heat exchanger, among other devices, to provide a controlled flow of temperature control fluid through the electrode 109 in order to obtain and maintain a prescribed wafer W temperature. The temperature control fluid circulation system 125 is connected to the control system 120 through one or more signal conductors 127. In various embodiments, various types of temperature control fluid can be used, such as water or a refrigerant liquid/gas. Also, in some embodiments, the temperature control fluid channels 123 are configured to enable spatially varying control of the temperature of the wafer W, such as in two dimensions (x and y) across the wafer W.
The ceramic layer 110 also includes an arrangement of backside gas supply ports 108 (see
Three lift pins 132 extend through the facilities plate 111, the electrode 109, and the ceramic layer 110 to provide for vertical movement of the wafer W relative to the top surface of the ceramic layer 110. In some embodiments, vertical movement of the lift pins 132 is controlled by a respective electromechanical and/or pneumatic lifting device 133 connected to the facilities plate 111. The three lifting devices 133 are connected to the control system 120 through one or more signal conductors 134. In some embodiments, the three lift pins 132 are positioned to have a substantially equal azimuthal spacing about a vertical centerline of the electrode 109/ceramic layer 110 that extends perpendicular to the top surface of the ceramic layer 110. It should be understood that the lift pins 132 are raised to receive the wafer W into the chamber 101 and to remove the wafer W from the chamber 101. Also, the lift pins 132 are lowered to allow the wafer W to rest on the top surface of the ceramic layer 110 during processing of the wafer W.
Also, in various embodiments, one or more of the electrode 109, the facilities plate 111, the ceramic layer 110, the clamp electrodes 112, the lift pins 132, or essentially any other component associated therewith can be equipped to include one or more sensors, such as sensors for temperature measurement, electrical voltage measurement, and electrical current measurement, among others. Any sensor disposed within the electrode 109, the facilities plate 111, the ceramic layer 110, the clamp electrodes 112, the lift pins 132, or essentially any other component associated therewith is connected to the control system 120 by way of electrical wire, optical fiber, or through a wireless connection.
The facilities plate 111 is set within an opening of a ceramic support 113, and is supported by the ceramic support 113. The ceramic support 113 is positioned on a supporting surface 114 of a cantilever arm assembly 115. In some embodiments, the ceramic support 113 has a substantially annular shape, such that the ceramic support 113 substantially circumscribes the outer radial perimeter of the facilities plate 111, while also providing a supporting surface 116 upon which a bottom outer peripheral surface of the facilities plate 111 rests. The cantilever arm assembly 115 extends through the wall 101A of the chamber 101. In some embodiments, a sealing mechanism 135 is provided within the wall 101A of the chamber 101 where the cantilever arm assembly 115 is located to provide for sealing of the interior region 103 of the chamber 101, while also enabling the cantilever arm assembly 115 to move upward and downward in the z-direction in a controlled manner.
The cantilever arm assembly 115 has an open region 118 through which various devices, wires, cables, and tubing is routed to support operations of the system 100. The open region 118 within the cantilever arm assembly is exposed to ambient atmospheric conditions outside of the chamber 101, e.g., air composition, temperature, pressure, and relative humidity.
Also, a radiofrequency signal supply rod 137 is positioned inside of the cantilever arm assembly 115. More specifically, the radiofrequency signal supply rod 137 is positioned inside of an electrically conductive tube 139, such that the radiofrequency signal supply rod 137 is spaced apart from the inner wall of the tube 139. In some embodiments, the tube 139 has an inner diameter within a range extending from about 1.5 inches to about 6 inches. In some embodiments, the radiofrequency signal supply rod 137 has an outer diameter within a range extending from about 0.75 inch to about 2 inches. In some embodiments, a difference between the inner diameter of the tube 139 and the outer diameter of the radiofrequency signal supply rod 137 is within a range extending from about 0.25 inch to about 4 inches. The sizes of the radiofrequency signal supply rod 137 and the tube 139 may vary. The region inside of the tube 139 between the inner wall of the tube 139 and the radiofrequency signal supply rod 137 is occupied by air along the full length of the tube 139. In some embodiments, the outer diameter (Droll) of the radiofrequency signal supply rod 137 and the inner diameter of the tube 139 (Dtube) are set to satisfy the relationship ln(Dtube/Drod)>=e1.
In some embodiments, the radiofrequency signal supply rod 137 is substantially centered within the tube 139, such that a substantially uniform radial thickness of air exists between the radiofrequency signal supply rod 137 and the inner wall of the tube 139, along the length of tube 139. However, in some embodiments, the radiofrequency signal supply rod 137 is not centered within the tube 139, but the air gap within the tube 139 exists at all locations between the radiofrequency signal supply rod 137 and the inner wall of the tube 139, along the length of the tube 139. A delivery end of the radiofrequency signal supply rod 137 is electrically and physically connected to a lower end of a radiofrequency signal supply shaft 141. In some embodiments, the delivery end of the radiofrequency signal supply rod 137 is bolted to a lower end of a radiofrequency signal supply shaft 141. An upper end of the radiofrequency signal supply shaft 141 is electrically and physically connected to the bottom the facilities plate 111. In some embodiments, the upper end of the radiofrequency signal supply shaft 141 is bolted to the bottom the facilities plate 111. In some embodiments, both the radiofrequency signal supply rod 137 and the radiofrequency signal supply shaft 141 are formed of copper. In some embodiments, the radiofrequency signal supply rod 137 is formed of copper, or aluminum, or anodized aluminum. In some embodiments, the radiofrequency signal supply shaft 141 is formed of copper, or aluminum, or anodized aluminum. In other embodiments, the radiofrequency signal supply rod 137 and/or the radiofrequency signal supply shaft 141 is formed of another electrically conductive material that provides for transmission of radiofrequency electrical signals. In some embodiments, the radiofrequency signal supply rod 137 and/or the radiofrequency signal supply shaft 141 is coated with an electrically conductive material (such as silver or another electrically conductive material) that provides for transmission of radiofrequency electrical signals. Also, in some embodiments, the radiofrequency signal supply rod 137 is a solid rod. However, in other embodiments, the radiofrequency signal supply rod 137 is a tube. Also, it should be understood that a region 140 surrounding the connection between the radiofrequency signal supply rod 137 and the radiofrequency signal supply shaft 141 is occupied by air.
A supply end of the radiofrequency signal supply rod 137 is connected electrically and physically to an impedance matching system 143. The impedance matching system 143 is connected to a first radiofrequency signal generator 147 and a second radiofrequency signal generator 149. The impedance matching system 143 is also connected to the control system 120 through one or more signal conductors 144. The first radiofrequency signal generator 147 is also connected to the control system 120 through one or more signal conductors 148. The second radiofrequency signal generator 149 is also connected to the control system 120 through one or more signal conductors 150. The impedance matching system 143 includes an arrangement of inductors and capacitors sized and connected to provide for impedance matching so that radiofrequency power can be transmitted along the radiofrequency signal supply rod 137, along the radiofrequency signal supply shaft 141, through the facilities plate 111, through the electrode 109, and into a plasma processing region 182 above the ceramic layer 110. In some embodiments, the first radiofrequency signal generator 147 is a high frequency radiofrequency signal generator, and the second radiofrequency signal generator 149 is a low frequency radiofrequency signal generator. In some embodiments, the first radiofrequency signal generator 147 generates radiofrequency signals within a range extending from about 50 MegaHertz (MHz) to about 70 MHz, or within a range extending from about 54 MHz to about 63 MHz, or at about 60 MHz. In some embodiments, the first radiofrequency signal generator 147 supplies radiofrequency power within a range extending from about 5 kiloWatts (kW) to about 25 kW, or within a range extending from about 10 kW to about 20 kW, or within a range extending from about 15 kW to about 20 kW, or of about 10 kW, or of about 16 kW. In some embodiments, the second radiofrequency signal generator 149 generates radiofrequency signals within a range extending from about 50 kiloHertz (kHz) to about 500 kHz, or within a range extending from about 330 kHz to about 440 kHz, or at about 400 kHz. In some embodiments, the second radiofrequency signal generator 149 supplies radiofrequency power within a range extending from about 15 kW to about 100 kW, or within a range extending from about 30 kW to about 50 kW, or of about 34 kW, or of about 50 kW. In an example embodiment, the first radiofrequency signal generator 147 is set to generate radiofrequency signals of about 60 MHz, and the second radiofrequency signal generator 149 is set to generate radiofrequency signals of about 400 kHz.
By way of example, an RF strap as referenced herein is a flat elongated piece of metal that is made from an electrically conductive material, such as copper. Therefore, the RF strap has a length, a width, and a thickness. The length of the RF strap is greater than the width of the RF strap. And, the width of the RF strap is greater than the thickness of the RF strap. In some embodiments, the RF strap is flexible to provide for bending or re-shaping of the RF strap.
The first branch 302A includes an RF strap portion 304A (represented as inductor LA), an RF strap portion 304B (represented as inductor LB), an RF strap 304C (represented as inductor LC), an RF strap 304D (represented as inductor LD), and an RF strap 304E (represented as inductor LE). In some embodiments, the RF strap portions 304A and 304B are respective parts of one RF strap, such that inductors LA and LB represent separate portions of one RF strap. However, in some embodiments, instead of having one RF strap that includes the two RF strap portions 304A and 304B, two separate RF straps are used for the RF strap portions 304A and 304B, respectively. For example, a first RF strap having an inductance of the RF strap portion 304A is connected via an electrically conductive connector to a second RF strap having an inductance of the RF strap portion 304B.
The capacitor C3 is coupled via the RF strap 304C to a prescribed position P1 on the RF strap that includes both the RF strap portions 304A and 304B. In this manner, the prescribed position P1 at which the RF strap 304C connects to the RF strap that includes both the RF strap portions 304A and 304B is what determines the respective lengths of the RF strap portions 304A and 304B. Also, the capacitor C7 is coupled to an end of the RF strap portion 304A opposite from the prescribed position P1. The prescribed position P1 is coupled via the RF strap portion 304B to the radiofrequency signal supply rod 137. The RF straps 304D and 304E are coupled together at a prescribed position P2. The capacitor C2 also has a terminal connected to the prescribed position P2. The RF strap 304D is coupled to the inductor L4 and to an input I1 of the impedance matching system 143. Each RF strap portion 304A and 304B, and each RF strap 304C, 304D, and 304E has a respective inductance. For example, the RF strap portion 304A has an inductance LA, the RF strap portion 304B as another inductance LB, the RF strap 304C has another inductance LC, the RF strap 304D has an inductance LD, and the RF strap 304E has an inductance LE. It should be noted that any RF strap, described herein, such as any of the RF straps 304A-304E, are not wound into a coil to form an inductor but is a flat elongated piece of metal.
In various embodiments, any of the capacitors and/or non-strap inductors shown in
With reference back to
The edge ring 167 is configured to facilitate extension of the plasma sheath radially outward beyond the peripheral edge of the wafer W to provide improvement in process results near the periphery of the wafer W. In various embodiments, the edge ring 167 is formed of a conductive material, such as crystalline silicon, polycrystalline silicon (polysilicon), boron doped single crystalline silicon, aluminum oxide, quartz, aluminum nitride, silicon nitride, silicon carbide, or a silicon carbide layer on top of an aluminum oxide layer, or an alloy of silicon, or a combination thereof, among other materials. It should be understood that the edge ring 167 is formed as an annular-shaped structure, e.g., as a ring-shaped structure. The edge ring 167 can perform many functions, including shielding components underlying the edge ring 167 from being damaged by ions of a plasma 180 formed within a plasma processing region 182. Also, the edge ring 167 improves uniformity of the plasma 180 at and along the outer peripheral region of the wafer W.
A fixed outer support flange 169 is attached to the cantilever arm assembly 115.
An articulating outer support flange 171 is configured and positioned to extend around at least a portion of the outer vertical surface 169D of the vertical portion 169A of the L-shaped cross-section of the fixed outer support flange 169, and to extend around the upper outer vertical side surface 165B of the second quartz ring 165. The articulating outer support flange 171 has an annular shape that circumscribes both at least a portion of the vertical portion 169A of the L-shaped vertical cross-section of the fixed outer support flange 169 and the upper outer vertical side surface 165B of the second quartz ring 165. The articulating outer support flange 171 has an L-shaped vertical cross-section that includes a vertical portion 171A and a horizontal portion 171B. The vertical portion 171A of the L-shaped cross-section of the articulating outer support flange 171 has an inner vertical surface 171C that is positioned proximate to and spaced apart from both at least a portion of the outer vertical side surface 169D of the vertical portion 169A of the L-shaped cross-section of the fixed outer support flange 169 and the upper outer vertical side surface 165B of the second quartz ring 165. In this manner, the articulating outer support flange 171 is moveable in the vertical direction (z-direction) along both the vertical portion 169A of the L-shaped vertical cross-section of the fixed outer support flange 169 and the upper outer vertical side surface 165B of the second quartz ring 165, as indicated by arrow 172. The articulating outer support flange 171 is formed of an electrically conductive material. In some embodiments, the articulating outer support flange 171 is formed of aluminum or anodized aluminum. However, in other embodiments, the articulating outer support flange 171 can be formed of another electrically conductive material, such as copper or stainless steel.
A number of electrically conductive straps 173 are connected between the articulating outer support flange 171 and the fixed outer support flange 169, around the outer radial perimeters of both the articulating outer support flange 171 and the fixed outer support flange 169.
In the examples of
Also,
In some embodiments, the electrically conductive straps 173 are connected to the fixed outer support flange 169 by a clamping force applied by securing a clamp ring 175 to a top surface 169F of the horizontal portion 169B of the L-shaped cross-section of the fixed outer support flange 169. In some embodiments, the clamp ring 175 is bolted to the fixed outer support flange 169. In some embodiments, the bolts that secure the clamp ring 175 to the fixed outer support flange 169 are positioned at locations between the electrically conductive straps 173. However, in some embodiments, one or more bolts that secure the clamp ring 175 to the fixed outer support flange 169 can be positioned to extend through electrically conductive straps 173. In some embodiments, the clamp ring 175 is formed of a same material as the fixed outer support flange 169. However, in other embodiments, the clamp ring 175 and the fixed outer support flange 169 can be formed of different materials.
In some embodiments, such as shown in
A set of support rods 201 are positioned around the cantilever arm assembly 115 to extend vertically through the horizontal portion 169B of the L-shaped cross-section of the fixed outer support flange 169. The upper end of the support rods 201 are configured to engage with the bottom surface 171D of the horizontal portion 171B of the L-shaped cross-section of the articulating outer support flange 171. In some embodiments, a lower end of each of the support rods 201 is engaged with a resistance mechanism 203. The resistance mechanism 203 is configured to provide an upward force to the corresponding support rod 201 that will resist downward movement of the support rod 201, while allowing some downward movement of the support rod 201. In some embodiments, the resistance mechanism 203 includes a spring to provide the upward force to the corresponding support rod 201. In some embodiments, the resistance mechanism 203 includes a material, e.g., spring and/or rubber, that has a sufficient spring constant to provide the upward force to the corresponding support rod 201. It should be understood that as the articulating outer support flange 171 moves downward to engage the set of support rods 201, the set of support rods 201 and corresponding resistance mechanisms 203 provide an upward force to the articulating outer support flange 171. In some embodiments, the set of support rods 201 includes three support rods 201 and corresponding resistance mechanisms 203. In some embodiments, the support rods 201 are positioned to have a substantially equal azimuthal spacing relative to a vertical centerline of the electrode 109. However, in other embodiments, the support rods 201 are positioned to have a non-equal azimuthal spacing relative to a vertical centerline of the electrode 109. Also, in some embodiments, more than three support rods 201 and corresponding resistance mechanisms 203 are provided to support the articulating outer support flange 171.
With reference back to
The C-shroud is configured to extend around the plasma processing region 182 and provide a radial extension of the plasma processing region 182 volume into the region defined within the C-shroud member 185. The C-shroud member 185 includes a lower wall 185A, an outer vertical wall 185B, and an upper wall 185C. In some embodiments, the outer vertical wall 185B and the upper wall 185C of the C-shroud member 185 are solid, non-perforated members, and the lower wall 185A of the C-shroud member 185 includes a number of vents 186 through which process gases flow from within the plasma processing region 182. In some embodiments, a throttle member 196 is disposed below the vents 186 of the C-shroud member 185 to control a flow of process gas through the vents 186. More specifically, in some embodiments, the throttle member 196 is configured to move up and down vertically in the z-direction relative to the C-shroud member 185 to control the flow of process gas through the vents 186. In some embodiments, the throttle member 196 is configured to engage with and/or enter the vents 186.
The upper wall 185C of the C-shroud member 185 is configured to support an upper electrode 187A/187B. In some embodiments, the upper electrode 187A/187B includes an inner upper electrode 187A and an outer upper electrode 187B. Alternatively, in some embodiments, the inner upper electrode 187A is present and the outer upper electrode 187B is not present, with the inner upper electrode 187A extending radially to cover the location that would be occupied by the outer upper electrode 187B. In some embodiments, the inner upper electrode 187A is formed of single crystal silicon and the outer upper electrode 187B is formed of polysilicon. However, in other embodiments, the inner upper electrode 187A and the outer upper electrode 187B can be formed of other materials that are structurally, chemically, electrically, and mechanically compatible with the processes to be performed within the plasma processing region 182. The inner upper electrode 187A includes a number of throughports 197 defined as holes extending through an entire vertical thickness of the inner upper electrode 187A. The throughports 197 are distributed across the inner upper electrode 187A, relative to the x-y plane, to provide for flow of process gas(es) from a plenum region 188 above the upper electrode 187A/187B to the plasma processing region 182 below the upper electrode 187A/187B.
With reference back to
A processing gap (g1) is defined as the vertical (z-direction) distance as measured between the top surface of the ceramic layer 110 and the bottom surface of the inner upper electrode 187A. The size of the processing gap (g1) can be adjusted by moving the cantilever arm assembly 115 in the vertical direction (z-direction). As the cantilever arm assembly 115 moves upward, the articulating outer support flange 171 eventually engages the lower wall 185A of the C-shroud member 185, at which point the articulating outer support flange 171 moves along the fixed outer support flange 169 as the cantilever arm assembly 115 continues to move upward until the set of support rods 201 engage the articulating outer support flange 171 and the prescribed processing gap (g1) size is achieved. Then, to reverse this movement for removal of the wafer W from the chamber, the cantilever arm assembly 115 is moved downward until the articulating outer support flange 171 moves away from the lower wall 185A of the C-shroud member 185.
During plasma processing operations within the plasma processing system 100, the one or more process gas(es) are supplied to the plasma processing region 182 by way of the process gas supply system 191, plenum region 188, and throughports 197 within the inner upper electrode 187A. Also, radiofrequency signals are transmitted into the plasma processing region 182, by way of the first and second radiofrequency signal generators 147, 149, the impedance matching system 143, the radiofrequency signal supply rod 137, the radiofrequency signal supply shaft 141, the facilities plate 111, the electrode 109, and through the ceramic layer 110. The radiofrequency signals transform the process gas(es) into the plasma 180 within the plasma processing region 182. Ions and/or reactive constituents of the plasma interact with one or more materials on the wafer W to cause a change in composition and/or shape of particular material(s) present on the wafer W. The exhaust gases from the plasma processing region 182 flow through the vents 186 in the C-shroud member 185 and through the interior region 103 within the chamber 101 to the exhaust port 105 under the influence of a suction force applied at the exhaust port 105, as indicated by arrows 195.
In various embodiments, the electrode 109 can be configured to have different diameters. However, in some embodiments, to increase the surface of the electrode 109 upon which the edge ring 167 rests, the diameter of the electrode 109 is extended. For example,
It should be understood that the combination of the articulating outer support flange 171, the electrically conductive straps 173, and the fixed outer support flange 169 are electrically at a reference ground potential, and collectively form a ground return path for radiofrequency signals transmitted from the electrode 109 through the ceramic layer 110 into the plasma processing region 182. The azimuthal uniformity of this ground return path around the perimeter of the electrode 109 can have an effect on uniformity of process results on the wafer W. For example, in some embodiments, the uniformity of etch rate across the wafer W can be affected by the azimuthal uniformity of the ground return path around the perimeter of the electrode 109. To this end, it should be understood that the number, configuration, and arrangement of the electrically conductive straps 173 around the perimeter of the electrode 109 can affect the uniformity of process results across the wafer W.
In the example embodiments of
It should be understood that the outward, inward, and S-shape configurations of the electrically conductive straps 173, 173A, 173B have different performance characteristics with regard to the ground return path for radiofrequency signals within the system 100. In particular, the impedance characteristics of the outward, inward, and S-shape configurations of the electrically conductive straps 173, 173A, 173B vary due to the differences in proximity of the electrically conductive straps 173, 173A, 173B to the outer vertical surface 169D of the vertical portion 169A of the fixed outer support flange 169, particularly as the articulating outer support flange 171 moves in the vertical direction (z-direction). When the processing gap (g1) is increased, the articulating outer support flange 171 is higher in the z-direction relative to the fixed outer support flange 169, which tends to reduce the curvature of the electrically conductive straps 173, 173A, 173B, either toward or away from the vertical portion 169A of the fixed outer support flange 169 as the case may be. And, when the processing gap (g1) is decreased, the articulating outer support flange 171 is lower in the z-direction relative to the fixed outer support flange 169, which tends to increase the curvature of the electrically conductive straps 173, 173A, 173B, either toward or away from the vertical portion 169A of the fixed outer support flange 169 as the case may be. These changes in the curvature of the electrically conductive straps 173, 173A, 173B with processing gap (g1) size, along with changes in the proximity of the electrically conductive straps 173, 173A, 173B relative to the vertical portion 169A of the fixed outer support flange 169, can cause a change in impedance along the radiofrequency signal ground return paths formed by the electrically conductive straps 173, 173A, 173B.
Studies of the outward, inward, and S-shape configurations of the electrically conductive straps 173, 173A, 173B showed that across an operable range of processing gap (g1) sizes, the outward configuration of the electrically conductive straps 173 (as shown in
In an example embodiment, the plasma processing system 100 includes the electrode 109, the ceramic layer 110, the radiofrequency signal generator 147/149, the fixed outer support flange 169, the articulating outer support flange 171, and a plurality of the electrically conductive straps 173. The electrode 109 has a substantially cylindrical shape defined by a top surface, a bottom surface, and an outer side surface. The top surface of the electrode 109 corresponds to a reference horizontal plane (x-y plane) with a reference vertical direction (z-direction) extending perpendicular to the reference horizontal plane. The ceramic layer 110 is formed on the top surface of the electrode 109. The ceramic layer 110 is configured to receive and support the wafer W. The radiofrequency signal generator 147, 149 is electrically connected through the impedance matching system 143 to the electrode 109. The radiofrequency signal generator 147, 149 is configured to generate and supply radiofrequency signals to the electrode 109.
The fixed outer support flange 169 is formed to circumscribe the outer side surface of the electrode 109. The fixed outer support flange 169 has a fixed spatial relationship relative to the electrode 109. The fixed outer support flange 169 has the vertical portion 169A and the horizontal portion 169B extending radially outward from the lower end of the vertical portion 169A. The fixed outer support flange 169 is electrically connected to a reference ground potential, e.g., by way of the cantilever arm assembly 115. The articulating outer support flange 171 is formed to circumscribe the fixed outer support flange 169. The articulating outer support flange 171 has a vertical portion171A and a horizontal portion 171B extending radially outward from a lower end of the vertical portion 171A. The vertical portion 171A of the articulating outer support flange 171 is positioned concentrically outside of at least a portion of the vertical portion 169A of the fixed outer support flange 169. The articulating outer support flange 171 is spaced apart from the fixed outer support flange 169, such that the articulating outer support flange 171 is vertically moveable relative to the fixed outer support flange 169.
Each of the plurality of electrically conductive straps 173 has a first end portion connected to the horizontal portion 171B of the articulating outer support flange 171, and a second end portion connected to the horizontal portion 169B of the fixed outer support flange 169. Each of the plurality of electrically conductive straps 173 bends outward away from the vertical portion 169A of the fixed outer support flange 169. In some embodiments, the plurality of electrically conductive straps 173 are positioned in a substantially equally spaced configuration around both the articulating outer support flange 171 and the fixed outer support flange 169. The plurality of electrically conductive straps 173 are configured to flex as the articulating outer support flange 171 moves relative to the fixed outer support flange 169. Each of the plurality of electrically conductive straps 173 has a bendable length extending between the first end portion that is connected to the articulating outer support flange 171 and the second end portion that is connected to the fixed outer support flange 169. In accordance with the outward bend of the plurality of electrically conductive straps 173, an entirety of the bendable length of each of the plurality of electrically conductive straps 173 is located outside of the articulating outer support flange 171 and/or the fixed outer support flange 169. In some embodiments, the first end portion of each of the plurality of electrically conductive straps 173 is connected to the lower surface 171D of the horizontal portion 171B of the articulating outer support flange 171 (see
In some embodiments, the clamp ring 177 (a first clamp ring) is connected to the horizontal portion 171B of the articulating outer support flange 171. The first end portions of the plurality of electrically conductive straps 173 are positioned between the clamp ring 177 and the horizontal portion 171B of the articulating outer support flange 171. The clamp ring 177 secures the plurality of electrically conductive straps 173 in physical and electrical connection with the horizontal portion 171B of the articulating outer support flange 171. Also, the clamp ring 175 (a second clamp ring) is connected to the horizontal portion 169B of the fixed outer support flange 169. The second end portions of the plurality of electrically conductive straps 173 are positioned between the clamp ring 175 and the horizontal portion 169B of the fixed outer support flange 169. The clamp ring 175 is secures the plurality of electrically conductive straps 173 in physical and electrical connection with the horizontal portion 169B of the fixed outer support flange 169. In some embodiments, the clamp ring 177 is bolted to the horizontal portion 171B of the articulating outer support flange 171, and the clamp ring 175 is bolted to the horizontal portion 169B of the fixed outer support flange 169. Also, in some embodiments, bolts used to bolt the clamp ring 177 to the horizontal portion 171B of the articulating outer support flange 171 are positioned between first end portions of electrically conductive straps 173. Similarly, in some embodiments, bolts used to bolt the clamp ring 175 to the horizontal portion 169B of the fixed outer support flange 169 are positioned between second end portions of electrically conductive straps 173.
In some embodiments, each of the articulating outer support flange 171, the fixed outer support flange 169, the clamp ring 177, and the clamp ring 175 is formed of aluminum. In some embodiments, each of the articulating outer support flange 171, the fixed outer support flange 169, the clamp ring 177, and the clamp ring 175 is formed of anodized aluminum. In some embodiments, each of the plurality of electrically conductive straps 173 is formed of stainless steel. In some embodiments, each of the plurality of electrically conductive straps 173 is formed of copper. In some embodiments, a number of the plurality of electrically conductive straps 173 is within a range extending from about 6 to about 80.
In some embodiments, each of the plurality of electrically conductive straps 173 has a rectangular prism shape, such as described with regard to
In some embodiments, the C-shroud member 185 is disposed above the electrode 109. The seal 179 is disposed on the upper end 171E of the vertical portion 171A of the articulating outer support flange 171. The seal 179 is configured to engage with the C-shroud member 185 when the articulating outer support flange 171 is moved upward to reach the C-shroud member 185. In some embodiments, the seal 179 is electrically conductive to provide electrical conductivity between the C-shroud member 185 and the articulating outer support flange 171.
In some embodiments, a ceramic structure, such as the ceramic support 113, is disposed between the electrode 109 and the fixed outer support flange 169. The ceramic structure is formed to circumscribe the outer side surface of the electrode 109. Also, in some embodiments, a quartz structure, such as the first quartz ring 163, is disposed between the ceramic structure and the fixed outer support flange 169. The quartz structure is formed to circumscribe a vertical portion of the ceramic structure. Also, in some embodiments, an edge ring 167 is disposed between the articulating outer support flange 171 and the ceramic layer 110. In some embodiments, a quartz ring, such as the second quartz ring 165, is disposed between the edge ring 167 and the articulating outer support flange 171.
In an example embodiment, a ground return assembly is disclosed for the plasma processing system 100. The ground return assembly includes the fixed outer support flange 169, the articulating outer support flange 171, and the plurality of electrically conductive straps 173. The fixed outer support flange 169 is formed to circumscribe the electrode 109 within the plasma processing system 100 and have a fixed spatial relationship relative to the electrode 109. The fixed outer support flange 169 has the vertical portion 169A and the horizontal portion 169B extending radially outward from the lower end of the vertical portion 169A. The articulating outer support flange 171 is formed to circumscribe the fixed outer support flange 169. The articulating outer support flange 171 has a vertical portion 171A and a horizontal portion 171B extending radially outward from the lower end of the vertical portion 171A. The vertical portion 171A of the articulating outer support flange 171 is positioned concentrically outside of at least a portion of the vertical portion 169A of the fixed outer support flange 169. The articulating outer support flange 171 is spaced apart from the fixed outer support flange 169, such that the articulating outer support flange 171 is moveable along the vertical portion 169A of the fixed outer support flange 169. Each of the plurality of electrically conductive straps 173 has the first end portion connected to the articulating outer support flange 171, and the second end portion connected to the fixed outer support flange 169. Each of the plurality of electrically conductive straps 173 bends outward away from the vertical portion 169A of the fixed outer support flange 169.
In an example embodiment, the plasma processing system 100 includes the electrode 109, the ceramic layer 110, the facilities plate 111, the radiofrequency signal supply shaft 141, the radiofrequency signal supply rod 137, the radiofrequency signal generator(s) 147, 149, the impedance matching system 143, and the tube 139. The electrode 109 is formed of electrically conductive material. The electrode 109 has a substantially cylindrical shape defined by a top surface, a bottom surface, and an outer side surface. The ceramic layer 110 is formed on the top surface of the electrode 109 and is configured to receive and support the wafer W. The facilities plate 111 is formed of electrically conductive material. The bottom surface of the electrode 109 is physically and electrically connected to the top surface of the facilities plate 111. The radiofrequency signal supply shaft 141 is formed of electrically conductive material. An upper end of the radiofrequency signal supply shaft 141 is physically and electrically connected to a bottom surface of the facilities plate 111. The radiofrequency signal supply rod 137 is formed of electrically conductive material. The lower end of the radiofrequency signal supply shaft 141 is physically and electrically connected to the delivery end of the radiofrequency signal supply rod 137. The radiofrequency signal generator(s) 147, 149 is/are electrically connected through the impedance matching system 143 to the supply end of the radiofrequency signal supply rod 137. The tube 139 is disposed around the radiofrequency signal supply rod 137. The tube 139 is formed of electrically conductive material. The tube 139 has an inner wall separated from the radiofrequency signal supply rod 137 by air along a full length of the tube 139.
In some embodiments, the physical and electrical connection between the radiofrequency signal supply rod 137 and the radiofrequency signal supply shaft 141 is separated from surrounding electrically conductive material by air. In some embodiments, a physical connection between the supply end of the radiofrequency signal supply rod 137 and the impedance matching system 143, and a physical connection between the delivery end of the radiofrequency signal supply rod 137 and the lower end of the radiofrequency signal supply shaft 141, and a physical connection between the upper end of the radiofrequency signal supply shaft 141 and the bottom surface of the facilities plate 111 collectively maintain physical dimensions of an air gap between the radiofrequency signal supply rod 137 and the inner wall of the tube 139 along the full length of the tube 139. In some embodiments, the tube 139 forms part of a ground potential return path for radiofrequency signals transmitted through the radiofrequency signal supply rod 137. Considering that the top surface of the electrode 109 corresponds to a reference horizontal plane (x-y plane) with a reference vertical direction (z-direction) extending perpendicular to the reference horizontal plane, in some embodiments, the radiofrequency signal supply rod 137 extends in a substantially linear direction substantially parallel to the reference horizontal plane, with the radiofrequency signal supply shaft 141 having a central axis oriented substantially parallel to the reference vertical direction.
In some embodiments, the radiofrequency signal supply rod 137 is formed of copper, or aluminum, or anodized aluminum. In some embodiments, the radiofrequency signal supply rod 137 is a solid rod. In some embodiments, the radiofrequency signal supply rod 137 is a tube. In some embodiments, the radiofrequency signal supply rod 137 has an outer diameter within a range extending from about 0.75 inch to about 2 inches. In some embodiments, the tube 139 has an inner diameter within a range extending from about 1.5 inches to about 6 inches. In some embodiments, a difference between the inner diameter of the tube 139 and the outer diameter of the radiofrequency signal supply rod 137 is within a range extending from about 0.25 inch to about 4 inches.
In some embodiments, the tube 139 is a first tube, and the plasma processing system 100 includes a second tube 139A disposed around at least a lower portion of the radiofrequency signal supply shaft 141. The first tube 139 is connected to the second tube 139A such that an interior volume of the first tube 139 is open to an interior volume of the second tube 139A (see
In an example embodiment, a radiofrequency signal supply structure is disclosed for the plasma processing system 100. The radiofrequency signal supply structure includes the radiofrequency signal supply rod 137 and the tube 139. The radiofrequency signal supply rod 137 is formed of electrically conductive material and has a supply end and a delivery end. The supply end is configured for connection to the impedance matching system 143 disposed between the radiofrequency signal supply rod 137 and the radiofrequency signal generator(s) 147, 149. The tube 139 is disposed around the radiofrequency signal supply rod 137. The tube 139 is formed of electrically conductive material and has an inner wall separated from the radiofrequency signal supply rod 137 by air along a full length of the tube 139. In some embodiments, the tube 139 extends from a location proximate to the impedance matching system 143 to a location proximate to delivery end of the radiofrequency signal supply rod 137. In some embodiments, the tube 139 forms part of a ground potential return path for radiofrequency signals transmitted through the radiofrequency signal supply rod 137.
In some embodiments, the control system 120 is employed to control devices in various wafer fabrication systems based in-part on sensed values. For example, the control system 120 may control one or more of valves 1217, filter heaters 1219, wafer support structure heaters 1221, pumps 1223, and other devices 1225 based on the sensed values and other control parameters. The valves 1217 can include valves associated with control of the backside gas supply system 129, the process gas supply system 191, and the temperature control fluid circulation system 125. The control system 120 receives the sensed values from, for example, pressure manometers 1227, flow meters 1229, temperature sensors 1231, and/or other sensors 1233, e.g., voltage sensors, current sensors, etc. The control system 120 may also be employed to control process conditions within the plasma processing system 100 during performance of plasma processing operations on the wafer W. For example, the control system 120 can control the type and amounts of process gas(es) supplied from the process gas supply system 191 to the plasma processing volume 182. Also, the control system 120 can control operation of the first radiofrequency signal generator 147, the second radiofrequency signal generator 149, and the impedance matching system 143. Also, the control system 120 can control operation of the DC supply 117 for the clamping electrode(s) 112. The control system 120 can also control operation of the lifting devices 133 for the lift pins 132 and operation of the door 107. The control system 120 also controls operation of the backside gas supply system 129 and the temperature control fluid circulation system 125. The control system 120 also control vertical movement of the cantilever arm assembly 115. The control system 120 also controls operation of the throttle member 196 and the pump that controls suction at the exhaust port 105. It should be understood that the control system 120 is equipped to provide for programmed and/or manual control any function within the plasma processing system 100.
In some embodiments, the control system 120 is configured to execute computer programs including sets of instructions for controlling process timing, process gas delivery system temperature, and pressure differentials, valve positions, mixture of process gases, process gas flow rate, backside cooling gas flow rate, chamber pressure, chamber temperature, wafer support structure temperature (wafer temperature), RF power levels, RF frequencies, RF pulsing, impedance matching system 143 settings, cantilever arm assembly position, bias power, and other parameters of a particular process. Other computer programs stored on memory devices associated with the control system 120 may be employed in some embodiments. In some embodiments, there is a user interface associated with the control system 120. The user interface include a display 1235 (e.g., a display screen and/or graphical software displays of the apparatus and/or process conditions), and user input devices 1237 such as pointing devices, keyboards, touch screens, microphones, etc.
Software for directing operation of the control system 120 may be designed or configured in many different ways. Computer programs for directing operation of the control system 120 to execute various wafer fabrication processes in a process sequence can be written in any conventional computer readable programming language: for example, assembly language, C, C++, Pascal, Fortran or others. Compiled object code or script is executed by the processor 1201 to perform the tasks identified in the program. The control system 120 can be programmed to control various process control parameters related to process conditions such as, for example, filter pressure differentials, process gas composition and flow rates, backside cooling gas composition and flow rates, temperature, pressure, plasma conditions, such as RF power levels and RF frequencies, bias voltage, cooling gas/fluid pressure, and chamber wall temperature, among others. Examples of sensors that may be monitored during the wafer fabrication process include, but are not limited to, mass flow control modules, pressure sensors, such as the pressure manometers 1227 and the temperature sensors 1231. Appropriately programmed feedback and control algorithms may be used with data from these sensors to control/adjust one or more process control parameters to maintain desired process conditions.
In some implementations, the control system 120 is part of a broader fabrication control system. Such fabrication control systems can include semiconductor processing equipment, including a processing tools, chambers, and/or platforms for wafer processing, and/or specific processing components, such as a wafer pedestal, a gas flow system, etc. These fabrication control systems may be integrated with electronics for controlling their operation before, during, and after processing of the wafer. The control system 120 may control various components or subparts of the fabrication control system. The control system 120, depending on the wafer processing requirements, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, the delivery of backside cooling gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
Broad1y speaking, the control system 120 may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable wafer processing operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the control system 120 in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on the wafer W within system 100. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
The control system 120, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the plasma processing system 100, or otherwise networked to the system 100, or a combination thereof. For example, the control system 120 may be in the “cloud” of all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system 100 to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system 100 over a network, which may include a local network or the Internet.
The remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system 100 from the remote computer. In some examples, the control system 120 receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed within the plasma processing system 100. Thus as described above, the control system 120 may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on the plasma processing system 100 in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process performed on the plasma processing system 100.
Without limitation, example systems that the control system 120 can interface with may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers. As noted above, depending on the process step or steps to be performed by the tool, the control system 120 might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.
Embodiments described herein may also be implemented in conjunction with various computer system configurations including hand-held hardware units, microprocessor systems, microprocessor-based or programmable consumer electronics, minicomputers, mainframe computers and the like. Embodiments described herein can also be implemented in conjunction with distributed computing environments where tasks are performed by remote processing hardware units that are linked through a network. It should be understood that the embodiments described herein, particularly those associated with the control system 120, can employ various computer-implemented operations involving data stored in computer systems. These operations are those requiring physical manipulation of physical quantities. Any of the operations described herein that form part of the embodiments are useful machine operations. The embodiments also relate to a hardware unit or an apparatus for performing these operations. The apparatus may be specially constructed for a special purpose computer. When defined as a special purpose computer, the computer can also perform other processing, program execution or routines that are not part of the special purpose, while still being capable of operating for the special purpose. In some embodiments, the operations may be processed by a general purpose computer selectively activated or configured by one or more computer programs stored in the computer memory, cache, or obtained over a network. When data is obtained over a network, the data may be processed by other computers on the network, e.g., a cloud of computing resources.
Various embodiments described herein can be implemented through process control instructions instantiated as computer-readable code on a non-transitory computer-readable medium. The non-transitory computer-readable medium is any data storage hardware unit that can store data, which can be thereafter be read by a computer system. Examples of the non-transitory computer-readable medium include hard drives, network attached storage (NAS), ROM, RAM, compact disc-ROMs (CD-ROMs), CD-recordables (CD-Rs), CD-rewritables (CD-RWs), magnetic tapes, and other optical and non-optical data storage hardware units. The non-transitory computer-readable medium can include computer-readable tangible medium distributed over a network-coupled computer system so that the computer-readable code is stored and executed in a distributed fashion.
Although the foregoing disclosure includes some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications can be practiced within the scope of the appended claims. For example, it should be understood that one or more features from any embodiment disclosed herein may be combined with one or more features of any other embodiment disclosed herein. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and what is claimed is not to be limited to the details given herein, but may be modified within the scope and equivalents of the described embodiments.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/US2021/015955 | 1/30/2021 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 62970167 | Feb 2020 | US |
