Claims
- 1. An organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I.
- 2. The organosiloxane of claim 1 wherein said Y is selected from phenyl, benzyl, substituted phenyl, naphthyl, anthryl, and phenanthryl.
- 3. The organosiloxane of claim 1 wherein said Z is selected from vinyl, substituted vinyl, vinyl ether, acrylate, and methacrylate.
- 4. An adhesion promoter comprising said organosiloxane of claim 1.
- 5. A film comprising said adhesion promoter of claim 4.
- 6. A spin-on composition comprising said organosiloxane of claim 1.
- 7. A film comprising said spin-on composition of claim 6.
- 8. A dielectric comprising said spin-on composition of claim 6.
- 9. A hardmask comprising said spin-on composition of claim 6.
- 10. An etch stop comprising said spin-on composition of claim 6.
- 11. A semiconductor device comprising said film of claim 7 and additionally comprising a second film that is adjacent to said first film.
- 12. The semiconductor device of claim 11 wherein said second film is an inorganic material.
- 13. The semiconductor device of claim 11 wherein said second film is an organic material.
- 14. The semiconductor device of claim 13 wherein said organic material comprises aromatic or aliphatic hydrocarbon.
- 15. The semiconductor device of claim 14 wherein said organic material comprises adamantane or diamantane based material.
- 16. The semiconductor device of claim 14 having a dielectric constant of less than 3.2.
- 17. A spin-on etch stop comprising organosiloxane of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I with substantially no silanol and having a dielectric constant of less than 3.2.
- 18. The spin-on etch stop of claim 17 wherein said spin-on etch stop comprises at least 80 weight percent of said organosiloxane.
- 19. The spin-on etch stop of claim 17 wherein said Y is selected from phenyl, benzyl, substituted phenyl, naphthyl, anthryl, and phenanthryl.
- 20. The spin-on etch stop of claim 17 wherein said Y is selected from phenyl and benzyl.
- 21. The spin-on etch stop of claim 17 wherein said Z is selected from vinyl, substituted vinyl, vinyl ether, acrylate, and methacrylate.
- 22. The spin-on etch stop of claim 17 wherein said dielectric constant is less than or equal to about 3.2.
- 23. An organosiloxane having alkenyl groups and thermal stability.
- 24. The organosiloxane of claim 23 wherein said organosiloxane comprises at least 80 weight percent of Formula I: [Y0.5-1.0SiO1.5-2]a[Z0.5-1.0SiO1.5-2]b[H0.5-1SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I.
- 25. The organosiloxane of claim 24 wherein said Y is selected from phenyl, benzyl, substituted phenyl, naphthyl, anthryl, and phenanthryl.
- 26. The organosiloxane of claim 24 wherein said Z is selected from vinyl, substituted vinyl, vinyl ether, acrylate, and methacrylate.
- 27. An adhesion promoter comprising said organosiloxane of claim 23.
- 28. A film comprising said adhesion promoter of claim 27.
- 29. A spin-on composition comprising said composition of claim 23.
- 30. A film comprising said spin-on composition of claim 29.
- 31. A dielectric comprising said spin-on composition of claim 29.
- 32. A hard mask comprising said spin-on composition of claim 29.
- 33. An etch stop comprising said spin-on composition of claim 29.
- 34. A semiconductor device comprising said film of claim 30 and additionally comprising a second film that is adjacent to said first film.
- 35. The semiconductor device of claim 34 wherein said second film is an inorganic material.
- 36. The semiconductor device of claim 35 wherein said second film is an organic material.
- 37. The semiconductor device of claim 36 wherein said organic material comprises aromatic or aliphatic hydrocarbon.
- 38. The semiconductor device of claim 37 wherein said organic material comprises adamantane or diamantane based material.
- 39. The semiconductor device of claim 34 having a dielectric constant of less than 3.2.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of the following pending applications: a) U.S. application Ser. No. 09/609437 filed on Jun. 30, 2000, which is a divisional of U.S. Pat. No. 6,177,199 issued on Jan. 23, 2001; b) U.S. application Ser. No. 09/609499 filed on Jun. 30, 2000, which is a divisional of U.S. Pat. No. 6,218,020 issued on Apr. 17, 2001; c) U.S. application Ser. No. 09/610567 filed on Jul. 3, 2000, which is a divisional of U.S. Pat. No. 6,218,497 issued on Apr. 17, 2001; and d) U.S. application Ser. No. 09/611528 filed on Jun. 30, 2000, which is a divisional of U.S. Pat. No. 6,143,855 issued on Nov. 7, 2000, all of which are incorporated herein by reference in their entirety. This application claims the benefit of pending provisional patent applications U.S. Serial No. 60/334169 filed Nov. 20, 2001; U.S. Serial No. 60/334172 filed Nov. 29, 2001; and U.S. Ser. No. 60/336662 filed Dec. 3, 2001, all of which are incorporated herein by reference in their entireties.
Provisional Applications (3)
|
Number |
Date |
Country |
|
60334169 |
Nov 2001 |
US |
|
60334172 |
Nov 2001 |
US |
|
60336662 |
Dec 2001 |
US |
Divisions (4)
|
Number |
Date |
Country |
Parent |
09227035 |
Jan 1999 |
US |
Child |
09609437 |
Jun 2000 |
US |
Parent |
09609499 |
Jun 2000 |
US |
Child |
09227035 |
Jan 1999 |
US |
Parent |
09610567 |
Jul 2000 |
US |
Child |
09609499 |
Jun 2000 |
US |
Parent |
09044831 |
Mar 1998 |
US |
Child |
09610567 |
Jul 2000 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09609437 |
Jun 2000 |
US |
Child |
10078919 |
Feb 2002 |
US |