Claims
- 1. A patterned wafer inspection apparatus comprising:a sample stage to hold a wafer to be inspected, an electron beam source to radiate an area electron beam, an acceleration power source to give first potential to accelerate the area electron beam radiated from the electron beam source, means for irradiating the accelerated area electron beam to the wafer, means for giving second potential to a surface of a wafer to be inspected to reflect the area electron beam before the area electron beam reaches a surface of a wafer to be inspected, an image detector including a plurality of pixels to detect the reflected electron beam, an image processor to in inspect a wafer to be inspected by comparing images obtained by the image processor, wherein said area electron beam is defined so that a reflected area of the area electron beam detected by the detector corresponds to the plurality of the pixels.
- 2. A patterned wafer inspection apparatus, according to claim 1, whereinan absolute value of the second potential is greater than the absolute value of the first potential.
- 3. A patterned wafer inspection apparatus, according to claim 1, whereinsaid image detector is comprised of TDI sensor.
- 4. A patterned wafer inspection apparatus, according to claim 3, wherein:said means for accelerating the area electron beam is comprised of a first power source to give a first potential to the area electron beam, said means for reflecting the area electron beam is comprised of second power source to give a second potential to a wafer to be inspected, and an absolute value of the first potential is less than that of the second potential.
- 5. A patterned wafer inspection apparatus, comprising:a sample stage to hold a wafer to be inspected, an electron beam source to radiate an area electron beam, means for accelerating the area electron beam radiated from the electron beam source, means for irradiating the accelerated area electron beam to a wafer to be inspected, means for reflecting the area electron beam just before the area electron area beam reaches a surface of wafer to be inspected, means for detecting a reflected area electron beam including at least two pixels, means for forming an image from the reflected area electron beam detected by the detecting means, means for finding a defect in a wafer to be inspected by comparing the images, wherein said area electron beam is defined so that a reflected area of the area electron beam detected by the detector corresponds to the plurality of the pixels.
- 6. A sample defect inspection apparatus comprising:a sample stage for holding a sample to be inspected, an electron optical system to radiate an electron beam to the sample held on the sample stage, a power source to apply a predetermined voltage to the sample stage, an electron detector, a processing unit, wherein the electron beam radiated to a sample to be inspected is reflected before a surface of the sample without entering the surface of the sample by the application of the predetermined voltage to the sample, the detector detects the reflected electron beam, the signal processing unit processes a signal from the detector by the detection of the electron beam, and detects a defect formed in a sample to be inspected.
- 7. A sample defect inspection apparatus comprising:an electron optic system to radiate an area electron beam to a sample to be inspected, a power source to apply a predetermined voltage to a sample to be inspected, an electron detector to detect the reflected electron from a sample to be inspected, an image processor, wherein the radiated electron beam is reflected just before reaching a surface of a sample to be inspected, and said image processing unit forms an image of a sample to be inspected and analyzes the image to detect a defect in a sample to be inspected.
Priority Claims (1)
Number |
Date |
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Kind |
9-269500 |
Oct 1997 |
JP |
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Parent Case Info
This is a continuation application of U.S. Ser. No. 09/164,366, filed Oct. 1, 1998, now abandoned
US Referenced Citations (6)
Number |
Name |
Date |
Kind |
4978855 |
Liebl et al. |
Dec 1990 |
A |
5389787 |
Todokoro et al. |
Feb 1995 |
A |
5578821 |
Meisberger et al. |
Nov 1996 |
A |
5767516 |
Kawanami et al. |
Jun 1998 |
A |
6172363 |
Shinada et al. |
Jan 2001 |
B1 |
6184526 |
Kohama et al. |
Feb 2001 |
B1 |
Foreign Referenced Citations (2)
Number |
Date |
Country |
59-192943 |
Nov 1984 |
JP |
5-258703 |
Oct 1993 |
JP |
Non-Patent Literature Citations (3)
Entry |
Journal of Vacuum Science and Technology B, vol. 9, No. 6, Nov./Dec. 1991, “An electron-beam inspection system for x-ray mask production”, P. Sandford. |
Journal of Vacuum Science and Technology B, vol. 10, No. 6, Nov./Dec. 1992, Low-voltage electron-optical system for the high-speed inspection of integrated circuits, W.D. Meisburger et al, pp. 2804-2808. |
SPIE, vol. 2439, pp. 174-183. |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/164366 |
Oct 1998 |
US |
Child |
10/400588 |
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US |