PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM

Abstract

A plasma etching method includes the step of performing a plasma etching on a CFx film formed on a substrate to be processed by using a plasma of an etching gas. A gaseous mixture including CF4 and O2 is employed as the etching gas. The etching gas further includes a hydrogen-containing gas and the hydrogen-containing gas is CH3F or CH2F2. Further, a plasma etching apparatus includes a processing chamber; a processing gas supply unit; a plasma generating unit, thereby plasma processing the semiconductor substrate; and a control unit. Furthermore, in a computer-readable storage medium for storing therein a computer executable control program, the control program controls a plasma processing apparatus to perform the plasma etching method.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and features of the present invention will become apparent from the following description of embodiments given in conjunction with the accompanying drawings, in which:

FIGS. 1A to 1C provide cross sectional views of a semiconductor wafer to which a plasma etching method in accordance with an embodiment of the present invention is applied;

FIG. 2 sets forth a schematic configuration view of a plasma etching apparatus in accordance with the embodiment of the present invention; and

FIG. 3 presents a diagram showing a micro trench formed in a comparative example.

Claims

1. A plasma etching method comprising the step of: performing a plasma etching on a CFx film formed on a substrate to be processed by using a plasma of an etching gas,wherein a gaseous mixture including CF4 and O2 is employed as the etching gas.

2. The plasma etching method of claim 1, wherein the etching gas further includes a hydrogen-containing gas.

3. The plasma etching method of claim 2, wherein the hydrogen-containing gas is CH3F or CH2F2.

4. A plasma etching apparatus comprising: a processing chamber for accommodating therein a semiconductor substrate to be processed;a processing gas supply unit for supplying an etching gas into the processing chamber;a plasma generating unit for converting the etching gas supplied from the processing gas supply unit into a plasma, thereby plasma processing the semiconductor substrate; anda control unit for controlling the plasma etching method of claim 1 to be carried out in the processing chamber.

5. A plasma etching apparatus comprising: a processing chamber for accommodating therein a semiconductor substrate to be processed;a processing gas supply unit for supplying an etching gas into the processing chamber;a plasma generating unit for converting the etching gas supplied from the processing gas supply unit into a plasma, thereby plasma processing the semiconductor substrate; anda control unit for controlling the plasma etching method of claim 2 to be carried out in the processing chamber.

6. A plasma etching apparatus comprising: a processing chamber for accommodating therein a semiconductor substrate to be processed;a processing gas supply unit for supplying an etching gas into the processing chamber;a plasma generating unit for converting the etching gas supplied from the processing gas supply unit into a plasma, thereby plasma processing the semiconductor substrate; anda control unit for controlling the plasma etching method of claim 3 to be carried out in the processing chamber.

7. A computer-readable storage medium for storing therein a computer executable control program, wherein the control program controls a plasma processing apparatus to perform the plasma etching method of claim 1.

8. A computer-readable storage medium for storing therein a computer executable control program, wherein the control program controls a plasma processing apparatus to perform the plasma etching method of claim 2.

9. A computer-readable storage medium for storing therein a computer executable control program, wherein the control program controls a plasma processing apparatus to perform the plasma etching method of claim 3.