Patent Application
20250210308
The present disclosure relates to a plasma processing apparatus and a control method.
A plasma processing apparatus is used for plasma processing on a substrate. A capacitively coupled plasma processing apparatus is known as a kind of plasma processing apparatus. The capacitively coupled plasma processing apparatus includes a chamber, a substrate support, and an upper electrode. The substrate support is located in the chamber. The upper electrode is located above the substrate support. In a plasma processing apparatus described in Patent Document 1, a source radio-frequency power for plasma generation and a bias radio-frequency power for ion drawing-in are supplied in a pulse form to a substrate support, and a negative voltage is applied to an upper electrode.
According to one embodiment of the present disclosure, there is provided a plasma processing apparatus including: a chamber; a substrate support disposed in the chamber; an upper electrode disposed above the substrate support, wherein a plurality of gas holes for introducing a gas into the chamber is formed in the upper electrode; a radio-frequency power source configured to be electrically coupled to a radio-frequency electrode which is the substrate support or the upper electrode, and generate a source radio-frequency power for generating plasma from the gas in the chamber; a first bias power source configured to be electrically coupled to the substrate support, and generate an electric bias for drawing ions in the chamber into a substrate on the substrate support; a second bias power source configured to apply a negative voltage to the upper electrode; and a controller. The controller is configured to: control the radio-frequency power source to supply the source radio-frequency power to the radio-frequency electrode in an ON period; control the first bias power source to supply the electric bias to the substrate support in the ON period; control the second bias power source to apply a first negative voltage of which a voltage level has a first absolute value to the upper electrode in a first period including a start time point of the ON period; and control the second bias power source to apply a second negative voltage of which a voltage level has a second absolute value to the upper electrode in a second period after the first period in the ON period, and wherein the first absolute value is smaller than the second absolute value.
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the present disclosure.
Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, systems, and components have not been described in detail so as not to unnecessarily obscure aspects of the various embodiments.
Various exemplary embodiments are described below in detail with reference to the drawings. In addition, the same or equivalent parts are designated by like reference numerals in each drawing.
Hereinafter, a configuration example of a plasma processing system is described.
The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively-coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power source 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support 11 and a gas introducer. The gas introducer is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introducer includes a shower head 13. The substrate support 11 is located in the plasma processing chamber 10. The shower head 13 is located above the substrate support 11. In an embodiment, the shower head 13 constitutes at least a portion of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas into the plasma processing space 10s, and at least one gas exhaust port for exhausting the gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.
The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in plan view. The substrate W is located on the central region 111a of the main body 111 and the ring assembly 112 is located on the annular region 111b of the main body 111 to surround the substrate W on the central region 111a of the main body 111. Accordingly, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.
In an embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is located on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b located in the ceramic member 1111a. The ceramic member 1111a includes the central region 111a. In an embodiment, the ceramic member 1111a also includes the annular region 111b. In addition, another member which surrounds the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may include the annular region 111b. In this case, the ring assembly 112 may be located on the annular electrostatic chuck or the annular insulating member, or may be located on both the electrostatic chuck 1111 and the annular insulating member. Further, at least one RF/DC electrode coupled to a radio frequency (RF) power source 31 and/or a direct current (DC) power source 32, which will be described later, may be located in the ceramic member 1111a. In this case, the at least one RF/DC electrode functions as the lower electrode. When a bias RF signal and/or a DC signal, which will be described later, are supplied to the at least one RF/DC electrode, the RF/DC electrode is also referred to as a bias electrode. In addition, the conductive member of the base 1110 and the at least one RF/DC electrode may function as a plurality of lower electrodes. Further, the electrostatic electrode 1111b may function as the lower electrode. Accordingly, the substrate support 11 includes at least one lower electrode.
The ring assembly 112 includes one or more annular members. In an embodiment, one or more annular members include one or more edge rings and at least one cover ring. The edge ring is made of a conductive material or an insulating material, and the cover ring is made of an insulating material.
In addition, the substrate support 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or any combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 1110a. In an embodiment, the flow path 1110a is formed inside the base 1110, and one or more heaters are arranged in the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support 11 may include a heat transfer gas supply configured to supply a heat transfer gas to a gap between a rear surface of the substrate W and the central region 111a.
The shower head 13 is configured to introduce at least one processing gas from the gas supply 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes at least one upper electrode. In addition to the shower head 13, the gas introducer may include one or a plurality of side gas injectors (SGIs) installed in one or a plurality of openings formed in the sidewall 10a.
The gas supply 20 may include at least one gas source 21 and at least one flow rate controller 22. In an embodiment, the gas supply 20 is configured to supply at least one processing gas from the respective corresponding gas sources 21 to the shower head 13 via the respective corresponding flow rate controllers 22. Each flow rate controller 22 may include, for example, a mass flow controller or a pressure-controlled flow rate controller. Further, the gas supply 20 may include one or more flow rate modulation devices which modulate or pulse flow rates of the at least one processing gas.
The power source 30 includes a RF power source 31 coupled to plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to the at least one lower electrode and/or the at least one upper electrode. Accordingly, plasma is formed from the at least one processing gas supplied into the plasma processing space 10s. Therefore, the RF power source 31 may function as at least a portion of a plasma generator configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Further, by supplying the bias RF signal to the at least one lower electrode, a bias potential may be generated in the substrate W, and an ionic component in the formed plasma may be drawn into the substrate W.
In an embodiment, the RF power source 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is configured to be coupled to the at least one lower electrode and/or the at least one upper electrode via at least one impedance matching circuit, to generate a source RF signal (source RF power) for plasma generation. In an embodiment, the source RF signal has a frequency in a range of 10 MHz to 150 MHz. In an embodiment, the first RF generator 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the at least one lower electrode and/or the at least one upper electrode.
The second RF generator 31b is configured to be coupled to the at least one lower electrode via at least one impedance matching circuit to generate the bias RF signal (bias RF power). A frequency of the bias RF signal may be equal to or different from that of the source RF signal. In an embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In an embodiment, the bias RF signal has a frequency in a range of 100 kHz to 60 MHz. In an embodiment, the second RF generator 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to the at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
In addition, the power source 30 may include a DC power source 32 coupled to the plasma processing chamber 10. The DC power source 32 includes a first DC generator 32a and a second DC generator 32b. In an embodiment, the first DC generator 32a is configured to be connected to the at least one lower electrode to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In an embodiment, the second DC generator 32b is configured to be connected to the at least one upper electrode to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.
In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to the at least one lower electrode and/or the at least one upper electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle or any combination thereof. In an embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and the at least one lower electrode. Accordingly, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to the at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of the voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses in one cycle. In addition, the first and second DC generators 32a and 32b may be provided in addition to the RF power source 31, and the first DC generator 32a may be provided instead of the second RF generator 31b.
The exhaust system 40 may be connected to, for example, a gas exhaust port 10e located at a bottom portion of the plasma processing chamber 10. The exhaust system 40 may include a pressure adjusting valve and a vacuum pump. By the pressure adjusting valve, a pressure in the plasma processing space 10s is adjusted. The vacuum pump may include a turbo molecular pump, a dry pump, or any combination thereof.
The controller 2 processes computer-executable instructions for instructing the plasma processing apparatus 1 to execute various processes described in the present disclosure. The controller 2 may be configured to control each component of the plasma processing apparatus 1 to execute the various processes described herein below. In an embodiment, a portion or the whole of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include a processor 2al, a storage 2a2, and a communication interface 2a3. The controller 2 is implemented by, for example, a computer 2a. The processor 2al may be configured to read a program from the storage 2a2 and perform various control operations by executing the read program. The program may be stored in advance in the storage 2a2, or may be acquired via a medium when necessary. The acquired program is stored in the storage 2a2, and is read from the storage 2a2 and executed by the processor 2al. The medium may be various non-transitory storage medium readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processor 2al may be a central processing unit (CPU). The storage 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or any combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).
The ceiling plate 141 is in contact with the plasma processing space 10s, and defines the plasma processing space 10s from above the plasma processing space 10s. The ceiling plate 141 is made of a conductive material. The ceiling plate 141 is made of, for example, silicon. The cooling plate 142 is provided on the ceiling plate 141, and supports the ceiling plate 141. The cooling plate 142 is, for example, configured by forming a dielectric film such as aluminum oxide on a surface of a mother material made of aluminum. The cooling plate 142 includes a refrigerant flow path 142f formed inside the cooling plate 142. A refrigerant is supplied into the refrigerant flow path 142f from a chiller unit 60 provided outside a chamber 10. The refrigerant supplied into the refrigerant flow path 142f is returned to the chiller unit 60. The refrigerant is supplied into the refrigerant flow path 142f, so that the ceiling plate 141 is cooled.
The cooling plate 142 provides a gas diffusion chamber 13b. The ceiling plate 141 and the cooling plate 142 provides a plurality of gas holes which is the above-described plurality of gas introduction ports 13c. The plurality of gas holes extends through the cooling plate 142 and the ceiling plate 141 from the gas diffusion chamber 13b, and are opened toward the plasma processing space 10s.
The plasma processing apparatus 1 includes a radio-frequency power source 50, a first bias power source 51, and a second bias power source 52. The radio-frequency power source 50 is the above-described first RF generator 31a, and is electrically coupled to a radio-frequency electrode. The radio-frequency electrode is the above-described lower electrode of the substrate support 11 or the upper electrode 14. The radio-frequency power source 50 is configured to generate, as a source RF signal, a source radio-frequency power for generating plasma from a gas in the chamber 10. The radio-frequency power source 50 is electrically connected to the radio-frequency electrode via a matcher 50m. The matcher 50m includes a matching circuit for matching a load impedance of the radio-frequency power source 50 to an output impedance of the radio-frequency power source 50.
The first bias power source 51 is electrically coupled to the substrate support 11 (e.g., the above-described lower electrode). The first bias power source 51 is configured to generate an electric bias EB for drawing ions in plasma into the substrate W on the substrate support 11. The electric bias EB has a bias frequency. The bias frequency has a frequency in a range of 100 kHz or higher and 60 MHz or lower. The bias frequency is, for example, 400 KHz.
The first bias power source 51 may be the above-described second RF generator 31b. In this case, the first bias power source 51 is configured to generate, as the electric bias EB, a bias radio-frequency power LF which is the above-described bias RF signal. In this case, the first bias power source 51 is electrically connected to the substrate support 11 via a matcher 51m. The matcher 51m includes a matching circuit for matching a load impedance of the first bias power source 51 to an output impedance of the first bias power source 51. As illustrated in
Alternatively, the first bias power source 51 may include the above-described first DC generator 32a. In this case, the first bias power source 51 is configured to periodically generate, as the electric bias EB, a voltage pulse VP which is the above-described first DC signal. In this case, since the plasma processing apparatus 1 may not include the matcher 51m, the first bias power source 51 is electrically connected to the substrate support 11 (e.g., the lower electrode) without passing through the matcher 51m. As illustrated in
The second bias power source 52 includes the above-described second DC generator 32b, and is electrically coupled to the upper electrode 14. The second bias power source 52 is configured to apply a negative voltage UEV to the upper electrode 14. The second bias power source 52 may include a variable direct current power source.
Further, in the ON period PON, the controller 2 controls the first bias power source 51 to supply the electric bias EB to the substrate support 11 (e.g., the lower electrode). When the electric bias EB is the bias radio-frequency power LF, a power level of the bias radio-frequency power LF in the ON period PON is, for example, 3000 W or more and 100000 W or less. When the electric bias EB includes the voltage pulse VP, a power level of the voltage pulse VP in the ON period PON is, for example, a level in a range between −3000 V and −10000 V.
As illustrated in
Further, in the second period P2 after the first period P1 in the ON period PON, the controller 2 controls the second bias power source 52 to apply the negative voltage UEV of which a voltage level V2 has a second absolute value |V2| to the upper electrode 14. The first absolute value |V1| is smaller than the second absolute value |V2|. The second absolute value |V2| is, for example, 100 V or more and 1000 V or less. The second absolute value |V2| is, for example, 500 V.
In an embodiment, the ON period PON may appear alternately with an OFF period POFF. In the OFF period POFF, the controller 2 controls the radio-frequency power source 50 and the first bias power source 51 to stop the supply of the source radio-frequency power HF and the supply of the electric bias EB. That is, in an embodiment, the radio-frequency power source 50 is controlled by the controller 2 to periodically supply a pulse of the source radio-frequency power HF, and the first bias power source 51 is controlled by the controller 2 to periodically supply a pulse of the electric bias EB. The pulse of the source radio-frequency power HF and the pulse of the electric bias EB are periodically supplied, for example, at a pulse frequency of 1 kHz or higher and 20 kHz or lower. That is, the ON period PON periodically appears at a time interval of a reciprocal of the pulse frequency.
In the OFF period POFF, the controller 2 may control the second bias power source 52 to apply the negative voltage UEV to the upper electrode 14. A third absolute value |V3| of a voltage level V3 of the negative voltage UEV in the OFF period POFF may be larger than the second absolute value |V2|. The third absolute value |V3| is, for example, 300 V or more and 1000 V or less. The third absolute value |V3| is, for example, 1000 V.
In the plasma processing apparatus 1, the negative voltage UEV is applied to the upper electrode 14 in the ON period PON. Accordingly, a distance between plasma and the upper electrode 14 is increased, so that an increase in temperature of the upper electrode 14 is suppressed.
In addition, the first absolute value |V1| of the voltage level of the negative voltage UEV in the first period P1 is smaller than the second absolute value |V2| of the voltage level of the negative voltage UEV in the second period P2. Therefore, abnormal discharge in the plurality of gas holes of the upper electrode 14 just after the start of the ON period PON, which may occur when the voltage level of the negative voltage UEV in the second period P2 is not small, is suppressed.
In addition, since the negative voltage UEV is applied to the upper electrode 14 even in the OFF period POFF, charge removal of the upper electrode 14 in the OFF period POFF is performed.
A control method of the plasma processing apparatus according to the exemplary embodiment is described below with reference to
Process STa is performed throughout the ON period PON. In the process STa, in order to generate plasma from a gas in the chamber 10 of the plasma processing apparatus 1, the source radio-frequency power HF is supplied to the radio-frequency electrode from the radio-frequency power source 50.
Process STb is performed throughout the ON period PON. In the process STb, in order to draw ions in the chamber 10 into the substrate W on the substrate support 11, the electric bias EB is supplied to the substrate support 11 (e.g., the lower electrode) from the first bias power source 51.
Process STc is performed in the above-described first period P1. In the process STc, the negative voltage UEV of the voltage level V1 has the first absolute value |V1| is applied to the upper electrode 14 from the second bias power source 52.
Process STd is performed in the above-described second period P2. In the process STd, the negative voltage UEV of the voltage level V2 has the second absolute value |V2| is applied to the upper electrode 14 from the second bias power source 52. As described above, the first absolute value |V1| is smaller than the second absolute value |V2|.
In the method MT, the ON period PON and the OFF period POFF may also be alternately repeated. In this case, the method MT further includes process STe, process STf, and process STJ.
The processes STe and STf are performed throughout the OFF period POFF. In the process STe, the supply of the source radio-frequency power HF and the electric bias EB is stopped. In the process STf, the negative voltage UEV is applied to the upper electrode 14 from the second bias power source 52. The third absolute value |V3| of the voltage level V3 of the negative voltage UEV in the process STf may be larger than the second absolute value |V2| as described above.
In the process STJ, it is determined whether a stop condition is satisfied. The stop condition is satisfied, for example, when a repetition number of the processes Sta to STf reaches a predetermined number. In the process STJ, if it is determined that the stop condition is not satisfied, the processes from the process STa are repeated again. In the process STJ, it is determined that the stop condition is satisfied, the method MT ends.
A plasma processing apparatus according to another exemplary embodiment is described below with reference to
The plasma processing apparatus 1B further includes a detector 70. The detector 70 is configured to acquire a detection signal changed from a magnitude in normality of the upper electrode 14 when a possibility of discharge in the upper electrode 14 exists. A detection period of the detection signal may include the whole or a portion of the ON period PON. The portion of the ON period PON, which is the detection period of the detection signal, may include the start time point of the ON period PON. The detection period of the detection signal may further include at least a portion of the OFF period POFF. The detection signal is input to the controller 2.
The detection signal may be a signal representing a light emission intensity in a gas hole for monitoring among the plurality of gas holes (i.e., the plurality of gas introduction ports 13c) of the upper electrode 14. In this case, the detector 70 includes an optical sensor 71s configured to measure the light emission intensity in the gas hole for monitoring (hereinafter, referred to as a “light emission intensity”). An optical fiber extends between the optical sensor 71s and the gas hole for monitoring to optically connect the optical sensor 71s and the gas hole for monitoring.
Alternatively, the detection signal may be a signal representing a potential or current value of the upper electrode 14. In this case, the detector 70 includes an electrical sensor 72s configured to measure the potential or current value of the upper electrode 14. The electrical sensor 72s is electrically connected to the upper electrode 14.
In the plasma processing apparatus 1B, the controller 2 performs a first control if it is determined from the detection signal that the possibility of discharge in the upper electrode 14 does not exist, and performs a second control if it is determined from the detection signal that a possibility of discharge in the upper electrode 14 exists.
If the light emission intensity in the gas hole for monitoring, the potential of the upper electrode 14, or the current value of the upper electrode 14 is at a threshold or greater than the threshold, or exceeds the threshold, the controller 2 determines that the possibility of discharge in the upper electrode 14 exists and may perform the second control. If not, the controller 2 performs the first control.
Alternatively, if a difference value between one of the light emission intensity in the gas hole for monitoring, the potential of the upper electrode 14, or the current value of the upper electrode 14 and a corresponding value in the normality is at a threshold or greater than the threshold, or exceeds the threshold, the controller 2 determines that the possibility of discharge in the upper electrode 14 exists and may perform the second control. If not, the controller 2 performs the first control.
The first control performed by the controller 2 includes controlling the second bias power source 52 to apply, to the upper electrode 14, the negative voltage UEV of which the voltage level V2 has the above-described second absolute value |V2| throughout the ON period PON as illustrated in
The second control performed by the controller 2 includes controlling the second bias power source 52 to apply, to the upper electrode 14, the negative voltage UEV of which the voltage level V1 has the above-described first absolute value |V1| in the first period P1 as illustrated in
According to the plasma processing apparatus 1B, it is possible to control the voltage applied to the upper electrode 14 through the first control without performing the unnecessary second control when the possibility of discharge in the upper electrode 14 does not exist.
A control method of the plasma processing apparatus according to the another exemplary embodiment is described below with reference to
The method MTB further includes process STJB. In the process STJB, the controller 2 determines whether the possibility of discharge in the upper electrode 14 exists from the detection signal acquired by the detector 70. As for the determination of the possibility of discharge in the upper electrode 14, refer to the aforementioned description of the plasma processing apparatus 1B.
In the process STJB, when it is determined that the possibility of discharge in the upper electrode 14 does not exist, the above-described first control is performed in process ST1. After the process ST1, a processing may be transferred to the process STe.
In the process STJB, when it is determined that the possibility of discharge in the upper electrode 14 exists, the above-described second control is performed process ST2. The second control includes the processes STc and STd of the method MT. After the process ST2, a processing may be transferred to the process STe.
In the above, various exemplary embodiments have been described above, but the present disclosure is not limited to the aforementioned exemplary embodiments, and various additions, omissions, substitutions, and changes may be made. The components in the different embodiments may be combined to form another embodiment.
Hereinafter, various exemplary embodiments included in the present disclosure are described in the following [E1] to [E18].
[E1] A plasma processing apparatus including:
[E2] The plasma processing apparatus described in E1, wherein the electric bias is a bias radio-frequency power having a bias frequency or a voltage pulse periodically generated at a time interval that is a reciprocal of the bias frequency, and
[E3] The plasma processing apparatus described in E2, wherein the first period has a length of eight times or less or ten times or less of the cycle.
[E4] The plasma processing apparatus described in any one of E1 to E3, wherein the ON period and an OFF period are alternately performed, and
[E5] The plasma processing apparatus described in E4, wherein the controller is further configured to control the second bias power source to apply a third negative voltage of a voltage level has a third absolute value larger than the second absolute value to the upper electrode in the OFF period.
[E6] The plasma processing apparatus described in any one of E1 to E5, wherein the upper electrode includes:
[E7] The plasma processing apparatus described in E6, wherein the ceiling plate is made of silicon.
[E8] A control method including:
[E9] A plasma processing apparatus including:
[E10] The plasma processing apparatus described in E9, wherein the electric bias is a bias radio-frequency power having a bias frequency or a voltage pulse periodically generated at a time interval that is a reciprocal of the bias frequency, and
[E11] The plasma processing apparatus described in E10, wherein the first period has a length of eight times or less or ten times or less of the cycle.
[E12] The plasma processing apparatus described in any one of E9 to E11, wherein the ON period and an OFF period are alternately performed, and
[E13] The plasma processing apparatus described in E12, wherein the controller is further configured to control the second bias power source to apply a third negative voltage of a voltage level has a third absolute value larger than the second absolute value to the upper electrode in the OFF period.
[E14] The plasma processing apparatus described in any one of E9 to E13, wherein the upper electrode includes:
[E15] The plasma processing apparatus described in E14, wherein the ceiling plate is made of silicon.
[E16] The plasma processing apparatus described in any one of E9 to E15, wherein the controller is further configured to perform the second control when at least one of the light emission intensity, the potential, or the current value, which is specified from the detection signal, is at a threshold or greater than the threshold, or exceeds the threshold.
[E17] The plasma processing apparatus described in any one of E9 to E15, wherein the controller is further configured to perform the second control if at least one of a first difference value between the light emission intensity specified from the detection signal and a normal value of the light emission intensity, a second difference value between the potential specified from the detection signal and a normal value of the potential, or a third difference value of the current value specified from the detection signal and a normal value of the current value is at a threshold or greater than the threshold, or exceeds the threshold.
[E18] A control method including:
According to the present disclosure in some embodiments, it is possible to provide a technique of suppressing discharge in the upper electrode of the plasma processing apparatus.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2023-169441 | Sep 2023 | JP | national |
The application is a Bypass Continuation application of PCT International Application No. PCT/JP2024/034483, filed on Sep. 26, 2024 and designating the United States, the international application being based upon and claiming the benefit of priority from Japanese Patent Application No. 2023-169441, filed on Sep. 29, 2023, the entire content of each are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2024/034483 | Sep 2024 | WO |
| Child | 19074563 | US |
