Claims
- 1. A process for fabricating an interconnection substrate for use in semiconductor assembly, comprising the steps of:providing a support of electrically insulating material having a plurality of contact pads disposed on the surface of said support, said pads having a composition suitable for solder attachment; providing a sheet-like elastic polymer non-wettable by solder and having a coefficient of volumetric shrinkage greater than solder, said sheet having a plurality of openings in a pattern matching the pattern of said contact pads; aligning said polymer sheet with said support such that each of said openings is placed into alignment with one said contact pads; and attaching said polymer sheet to said support surface using elevated temperature, thereby selectively exposing said contact pads and tapering the walls of said openings towards said pads.
- 2. The method according to claim 1 wherein said elevated temperature is in the range from about 120 to 180° C.
- 3. A process for fabricating a semiconductor assembly comprising the steps of:providing a substrate having an electrically insulating support with first and second surfaces and a plurality of routing strips integral with said substrate, said first surface having a plurality of contact pads suitable for solder attachment and further covered by a sheet-like elastic polymer, non-wettable by solder and having a coefficient of volumetric shrinkage greater than solder, said sheet having openings exposing each of said pads, the walls of said openings tapered towards said pads; attaching an integrated circuit chip to said second substrate surface; electrically connecting said chip to said second surface using bonding wires; surrounding said chip and said bonding wires with an encapsulation compound; positioning one solder ball in each of said openings; elevating the temperature to reflow said solder, thereby attaching said solder to said pad metallization while not wetting said polymer walls; and lowering said reflow temperature to room temperature, thereby volumetrically shrinking said polymer more than said solder, thus creating a gap between said solder and said opening walls and shaping said solder into column-like contours.
- 4. The process according to claim 3 wherein said solder reflow temperature is the eutectic temperature of the solder mixture or in the temperature range from about 170 to 240° C.
- 5. A process for fabricating a semiconductor assembly comprising the steps of:providing a substrate having an electrically insulating support with first and second surfaces and a plurality of routing strips integral with said substrate, said first and second surfaces having a plurality of contact pads suitable for solder attachment, said first surface further covered by a sheet-like elastic polymer non-wettable by solder and having a coefficient of volumetric shrinkage greater than solder, said sheet having openings exposing each of said pads, the walls of said openings tapering towards said pads; attaching and electrically connecting an integrated circuit chip to said contact pads on said second substrate surface using chip solder bumps in flip process; positioning one solder ball in each of said openings; elevating the temperature to reflow said solder, thereby attaching said solder to said pad metallization while not wetting said polymer walls; and lowering said reflow temperature to room temperature, thereby volumetrically shrinking said polymer more than said solder, thus creating a gap between said solder and said opening walls and shaping said solder into column-like contours.
- 6. The process according to claim 5 further comprising the step of filling with a polymeric encapsulant any gaps between said substrate and said chip left void after said chip solder bumps are adhered to said substrate.
- 7. A process for fabricating a semiconductor assembly comprising the steps of:providing a substrate having an electrically insulating support with first and second surfaces and a plurality of routing strips integral with said substrate, said first and second surfaces having a plurality of contact pads suitable for solder attachment; attaching and electrically connecting an integrated circuit chip to said contact pads on said second substrate surface using chip solder bumps in flip process; providing a sheet-like elastic polymer non-wettable by solder and having a coefficient of volumetric shrinkage greater than solder, said sheet having a plurality of openings in a pattern matching the pattern of said contact pads on said first substrate surface; aligning said polymer sheet with said substrate such that each of said openings is placed into alignment with one said contact pad on said first substrate surface; attaching said polymer sheet to said first substrate surface using elevated temperature, thereby selectively exposing said contact pads and tapering the walls of said openings towards said pads; positioning one solder ball in each said opening; elevating the temperature to reflow said solder, thereby attaching said solder to said pad metallization while not wetting said polymer walls; and lowering said reflow temperature to ambient temperature, thereby volumetrically shrinking said polymer more than said solder, thus creating a gap between said solder and said opening walls and shaping said solder into column-like contours.
Parent Case Info
This is a divisional application of Ser. No. 09/654,540, filed Sep. 1, 2000 now U.S. Pat. No. 6,583,515, which is a non-provisional application claiming priority from provisional application Serial No. 60/152,438, filed Sep. 3, 1999.
US Referenced Citations (6)
Provisional Applications (1)
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Number |
Date |
Country |
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60/152438 |
Sep 1999 |
US |