Claims
- 1. A process for producing a cured dielectric film on a substrate which comprises depositing a nanoporous silica dielectric precursor onto a substrate which precursor comprises at least one hydrolysed and condensed alkoxysilane composition, and then heating the substrate in a substantially oxygen free environment at a temperature of about 350° C. or greater, for a time period of at least about 5 seconds.
- 2. The process of claim 1 wherein the alkoxysilane composition comprises a component selected from the group consisting of water, a base, an organic solvent and combinations therof.
- 3. The process of claim 1 wherein the alkoxysilane composition comprises a component having the formula: wherein at least 2 of the R groups are independently C1 to C4 alkoxy groups and the balance, if any, are independently selected from the group consisting of hydrogen, alkyl, phenyl, halogen, and substituted phenyl.
- 4. The process of claim 3 wherein each R is methoxy, ethoxy, propoxy or butoxy.
- 5. The process of claim 1 wherein the alkoxysilane composition comprises one or more components selected from the group consisting of tetraethoxysilane and tetramethoxysilane.
- 6. The process of claim 1 wherein the alkoxysilane composition comprises at least one organic solvent component selected from the group consisting of methanol, ethanol, n-propanol, isopropanol, n-butanol, and alcohols and polyols including glycols such as ethylene glycol, 1,4-butylene glycol, 1,5-pentanediol, 1,2,4-butanetriol, 1,2,3-butanetriol, 2-methyl-propanetriol, 2-(hydroxymethyl)-1,3-propanediol, 1,4-butanediol, 2-methyl-1,3-propanediol, tetraethylene glycol, triethylene glycol monomethyl ether, glycerol, and mixtures thereof.
- 7. The process of claim 1 wherein the alkoxysilane composition comprises a base selected from the group consisting of ammonia, an amine and combinations thereof.
- 8. The process of claim 1 wherein the substrate comprises at least one semiconductor material.
- 9. The process of claim 1 wherein the substrate comprises at least semiconductor material selected from the group consisting of gallium arsenide, silicon, compositions containing silicon, germanium and combinations thereof.
- 10. The process of claim 1 wherein the substrate has a pattern of lines on its surface.
- 11. The process of claim 1 wherein the substrate has a pattern of lines on its surface wherein the lines comprise a metal, an oxide, a nitride or an oxynitride.
- 12. The process of claim 1 wherein the substrate has a pattern of lines on its surface wherein the lines comprise a material selected from the group consisting of silica, silicon nitride, titanium nitride, tantalum nitride, aluminum, aluminum alloys, copper, copper alloys, tantalum, tungsten and silicon oxynitride.
- 13. The process of claim 1 further comprising the subsequent step of treating the nanoporous dielectric coating with a surface modification agent under conditions sufficient to render the nanoporous dielectric coating hydrophobic.
CROSS REFERENCE TO RELATED APPLICATION
This application claims the benefit of U.S. provisional patent application Ser. No. 60/098,515, filed Aug. 31, 1998 which is incorporated herein by reference.
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/098515 |
Aug 1998 |
US |