Claims
- 1. A process for producing a semiconductor, which comprises steps of:placing a wafer on a susceptor provided in a treating chamber, maintaining a susceptor temperature at 500° C. or higher, and supplying a feed gas together with a silicon containing gas from a shower plate toward the wafer into the treating chamber from a position 1-20 mm high above the the wafer, wherein the temperature of the shower plate is 200° C. or lower, and after the wafer is placed on the susceptor, the wafer is secured onto the susceptor by a force.
- 2. An apparatus for producing a semiconductor comprising a treating chamber, a pressure controlling device, a susceptor on which a wafer is to be mounted, having a plurality of electrodes so as to secure the wafer on the top surface of the susceptor, a heater provided below the susceptor, a shower plate provided at a distance of 1-20 mm from the position where the wafer is placed so as to supply a feed gas together with a silicon containing gas from the shower plate toward the wafer and provided with a plurality of gas injection nozzles, and a flow rate controller so as to control a flow rate of a silicon-containing gas.
- 3. An apparatus according to claim 2, wherein the shower plate is controlled so as to make the temperature of the shower plate 200° C. or lower.
- 4. A process for producing a semiconductor, which comprises steps of:placing a wafer on a susceptor provided in a treating chamber, heating a susceptor through a heater, and supplying a feed gas together with a silicon containing gas from a shower plate toward the wafer in the treating chamber from a position above the wafer, wherein the temperature of the shower plate is 200° C. or lower, and after the wafer is placed on the susceptor, the wafer is secured onto the susceptor by a force.
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a Continuation Application of application Ser. No. 09/787,242, filed Mar. 16, 2001 now U.S. Pat. No. 6,403,479.
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Continuations (1)
|
Number |
Date |
Country |
Parent |
09/787242 |
Mar 2001 |
US |
Child |
10/150950 |
|
US |