Claims
- 1. An apparatus for etching or plasma CVD, comprising;
- a vacuum chamber;
- an electric generator for generating an AC plasma in a plasma volume in the chamber;
- a workpiece carrier surface for receiving at least one workpiece having work surface to be treated;
- an insulating setting body having a setting surface mounted opposite the work surface, the setting body being electrically insulated from the chamber and operating at a floating potential to set a working rate distribution along the work surface facing the setting surface; and
- a microwave generator operatively connected to the vacuum chamber via the workpiece carrier surface for generating the plasma.
- 2. An apparatus for etching or plasma CVD, comprising;
- a vacuum chamber;
- an electric generator for generating an AC plasma in a plasma volume in the chamber;
- a workpiece carrier surface for receiving at least one workpiece having work surface to be treated;
- an insulating setting body having a setting surface mounted opposite the work surface, the setting body being electrically insulated from the chamber and operating at a floating potential to set a working rate distribution along the work surface facing the setting surface;
- a double electrode configuration on or in the chamber; and
- a high frequency generator operatively connected to the electrodes for generating the plasma.
- 3. Apparatus as stated in claim 2, wherein the apparatus is laid out as a triode apparatus having a coil configuration substantially coaxial to the double electrode configuration and an AC, intermediate frequency generator in the range of 200 kHz to 1 MHz connected to the coil configuration.
- 4. An apparatus for etching or plasma CVD, comprising;
- a vacuum chamber;
- at least one electric generator for generating an AC plasma in a plasma volume in the chamber;
- a workpiece carrier surface for receiving at least one workpiece having work surface to be treated; and
- an insulating setting body having a setting surface mounted opposite the work surface, the setting body being electrically insulated from the chamber and operating at a floating potential to set a working rate distribution along the work surface facing the setting surface,
- wherein the setting surface is adjustable with respect to at least one of its material, its shape or its surface quality.
- 5. An apparatus for etching or plasma CVD, comprising;
- a vacuum chamber;
- at least one electric generator for generating an AC plasma in a plasma volume in the chamber;
- a workpiece carrier surface for receiving at least one workpiece having work surface to be treated; and
- an insulating setting body having a setting surface mounted opposite the work surface, the setting body being electrically insulated from the chamber and operating at a floating potential to set a working rate distribution along the work surface facing the setting surface,
- wherein the setting surface comprises electrically insulating material and is formed by a coating on said setting body.
- 6. An apparatus for etching or plasma CVD, comprising;
- a vacuum chamber;
- at least one electric generator for generating an AC plasma in a plasma volume in the chamber;
- a workpiece carrier surface for receiving at least one workpiece having work surface to be treated; and
- an insulating setting body having a setting surface mounted opposite the work surface, the setting body being electrically insulated from the chamber and operating at a floating potential to set a working rate distribution along the work surface facing the setting surface,
- wherein the setting surface is structured to be a perforated plate.
- 7. An apparatus for etching or plasma CVD, comprising;
- a vacuum chamber;
- at least one electric generator for generating an AC plasma in a plasma volume in the chamber;
- a workpiece carrier surface for receiving at least one workpiece having work surface to be treated; and
- an insulating setting body having a setting surface mounted opposite the work surface, the setting body being electrically insulated from the chamber and operating at a floating potential to set a working rate distribution along the work surface facing the setting surface,
- wherein the setting surface is bent convexly with rounded vertex.
- 8. The apparatus of claim 7, wherein the setting surface is substantially conical.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2360/92 |
Jul 1992 |
CHX |
|
RELATED APPLICATION
This application is a continuation of application Ser. No. 08/395,298, filed Feb. 27, 1995, entitled "PROCESS FOR SETTING A WORKING RATE DISTRIBUTION IN AN ETCHING OR PLASMA CVD APPARATUS", now abandoned, which is a continuation of application Ser. No. 08/096,690, filed Jul. 23, 1993 having the same title now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (4)
Number |
Date |
Country |
62-40380 |
Feb 1987 |
JPX |
J6 2040-380 |
Feb 1987 |
JPX |
62-219912 |
Sep 1987 |
JPX |
63-206484 |
Aug 1988 |
JPX |
Continuations (2)
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Number |
Date |
Country |
Parent |
395298 |
Feb 1995 |
|
Parent |
096690 |
Jul 1993 |
|