This invention was made by an employee of the United States Government and may be made or used by the Government of the United States without a payment of royalties thereon or therefore.
Number | Name | Date | Kind |
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3275415 | Chang et al. | Sep 1966 | |
3520740 | Addamiano | Jul 1970 | |
4664944 | Hsu et al. | May 1987 | |
4866005 | Davis et al. | Sep 1989 | |
4912063 | Davis et al. | Mar 1990 | |
4912064 | Kong et al. | Mar 1990 | |
4946547 | Palmour et al. | Aug 1990 |
Entry |
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Jennings, V. J. et al., "The Expitaxial Growth of Silicon Carbide," Journal of the Electrochemical Society, vol. 113, No. 7, Jul., 1966, pp. 728-731. |