Claims
- 1. A radiation sensitive material comprising: a copolymer including itaconic anhydride which is expressed by a unit structure including an alicyclic structure or an aromatic structure; and a unit structure which generates an alkali soluble group in the presence of an acid; and a substance generating an acid by application of radiation.
- 2. A radiation sensitive material according to claim 1, wherein the copolymer is expressed by a general formula (where l, m and n represent 0<1≦60 mol %, 10-95 mol %, 5-50 mol % respectively; R1, R2, R3 and R4 represent H, halogen, C1-4 alkyl group, C1-4 substituted alkyl group, nitrile group, —(CH2)nCOOR5(n=0−1) or —(CH2)nCOOR6(n=0−1); R5 represents alicyclic group, substituted alicyclic group, aromatic group or substituted aromatic group; and R6 represents t-butyl group, t-amyl group, dimethylbenzyl group, tetrahydropyranyl group or 3-oxocyclohexyl group).
- 3. A radiation sensitive material according to claim 2, wherein the copolymer includes the unit structure including the itaconic anhydride by 5-50 mol %.
- 4. A radiation sensitive material according to claim 1, wherein the copolymer is expressed by (where l, m and n represent 1-95 mol %, 10-95 mol % and 5-50 mol %; Z represents benzene ring, substituted benzene ring, —OR7, —COR7 or —OCOR7; R1, R2, R3 and R4 represent H, halogen, C1-4 alkyl group, C1-4 substituted alkyl group, nitrile group, —C(CH2)nCOOR5(n=0−1), or —(CH2)nCOOR6(n=0−1); R6 represents t-butyl group, t-amyl group, dimethylbenzyl group, tetrahydropyranyl group or 3-oxocyclohexyl group; R7 represents alicyclic group, substituted alicyclic group, aromatic group or substituted aromatic group; and R5 represents alicyclic group, substituted alicyclic group, aromatic group or substituted aromatic group.
- 5. A radiation sensitive material according to claim 4, wherein the copolymer includes the unit structure including the itaconic anhydride by 5-50 mol %.
- 6. A radiation sensitive material according to claim 1, wherein the copolymer is expressed by a general formula. (where l, m and n represent 0<1≦95 mol %, 1-95 mol % and 5-50 mol %; R1, R2, R3 and R4 represent H, halogen, C1-4 alkyl group, C1-4 substituted alkyl group, nitrile group, —(CH2)nCOOR5(n=0−1) or —(CH2)COOR6 (n=0−1); R5 represents alicyclic group, substituted alicyclic group, aromatic group or substituted aromatic group; R6 represents t-butyl group, t-amyl group, dimethylbenzyl group, tetrahydropyranyl group or 3-oxocyclohexyl group; and R8 represents —OtBu, —OCOOtBu or —COOt-Amyl).
- 7. A radiation sensitive material according to claim 6, wherein the copolymer includes the unit structure including the itaconic anhydride by 5-50 mol %.
- 8. A radiation sensitive material according to claim 1, wherein the copolymer is expressed by a general formula (where l, m and n represent 0<1≦95 mol %, 1-95 mol % and 5-50 mol %; Z represents benzene ring, substituted benzene ring, OR7, —COR7 or —OCOR7; R1, R2, R3 and R4 represent H, halogen, C1-4 alkyl group, C1-4, -4 substituted alkyl group, nitrile group, —(CH2)nCOOR5(n=0−1) or —(CH2)nCOOR6(n=0−1); R5 represents alicyclic group, substituted alicyclic group, aromatic group or substituted aromatic group; R6 represents t-butyl group, t-amyl group, dimethylbenzyl group, tetrahydropyranyl group or 3-oxocyclohexyl group; R7 represents alicyclic group, substituted alicyclic group, aromatic group or substituted aromatic group; and R8 represents —OtBu, —OCOOtBu, or —COOt-Amyl).
- 9. A radiation sensitive material according to claim 8, wherein the copolymer includes the unit structure including the itaconic anhydride by 5-50 mol %.
- 10. A radiation sensitive material according to claim 1, wherein the copolymer includes the unit structure including the itaconic anhydride by 5-50 mol %.
- 11. A method for forming a pattern comprising the steps of: preparing a resist of a radiation sensitive material according to claim 1;applying the resist to a substrate to be processed; prebaking the substrate and then selectively exposing the resist on the substrate to radiation; and postbaking the substrate, and then developing the resist on the substrate to form the pattern.
- 12. A method for forming a pattern comprising the steps of:forming a resist of a radiation sensitive material according to claims 1; coating a substrate-to-be-processed with the resist, and prebaking the substrate to be processed; applying a protecting film of a hydrocarbon polymer, which is transparent to far ultraviolet rays, and heating the same; selectively exposing radiation to the resist on the substrate to be processed, and postbaking the substrate to be processed; and stripping the protecting film, and developing the resist on the substrate to be processed to form a desired resist pattern.
- 13. A method for forming a pattern according to claim 12, wherein an application solvent for the hydrocarbon polymer for the protecting film is limonene. 1,5-cyclooctadiene, 1-decene, t-butylcyclohexane, p-cymene or dodecylbenzene.
- 14. A method for forming a pattern according to claim 13, wherein the hydrocarbon polymer is an olefine polymer or a diene polymer.
- 15. A method for forming a pattern according to claim 12, wherein the hydrocarbon polymer is an olefine polymer or a diene polymer.
- 16. A method for forming a pattern according to claim 12, wherein the substance having a polar-structure is ketone, alcohol, ether, ester, carbonic acid, an acid anhydride, or any one of these substances having a part of the atoms of a polar structure.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-337434 |
Dec 1993 |
JP |
|
Parent Case Info
This is a Division of application Ser. No. 09/438,416, filed Nov. 12, 1999 now U.S. Pat. No. 6,344,304, which is turn is a division of Ser. No. 08/999,394, filed Dec. 29, 1997 now U.S. Pat. No. 6,004,720, which is a continuation Application of parent application Ser. No. 08/365,407, filed Dec. 28, 1994 now abandoned. The disclosure of the prior application(s) is hereby incorporated by reference herein in its entirety.
US Referenced Citations (17)
Foreign Referenced Citations (37)
Number |
Date |
Country |
0 366 590 |
May 1990 |
EP |
0 476 865 |
Mar 1992 |
EP |
0 487 261 |
May 1992 |
EP |
0 516 427 |
Dec 1992 |
EP |
0 544 465 |
Jun 1993 |
EP |
58122533 |
Jul 1983 |
JP |
52040450 |
Feb 1987 |
JP |
03192173 |
Aug 1991 |
JP |
03223864 |
Oct 1991 |
JP |
03223865 |
Oct 1991 |
JP |
04026850 |
Jan 1992 |
JP |
04039665 |
Feb 1992 |
JP |
04156548 |
May 1992 |
JP |
04211258 |
Aug 1992 |
JP |
04251259 |
Sep 1992 |
JP |
04321049 |
Nov 1992 |
JP |
04347857 |
Dec 1992 |
JP |
05017711 |
Jan 1993 |
JP |
05019479 |
Jan 1993 |
JP |
05039444 |
Feb 1993 |
JP |
05045881 |
Feb 1993 |
JP |
5-72738 |
Mar 1993 |
JP |
05072738 |
Mar 1993 |
JP |
5-80516 |
Apr 1993 |
JP |
0515718 |
Jun 1993 |
JP |
05181279 |
Jul 1993 |
JP |
05216244 |
Aug 1993 |
JP |
05224422 |
Sep 1993 |
JP |
05232705 |
Sep 1993 |
JP |
05247386 |
Sep 1993 |
JP |
05249682 |
Sep 1993 |
JP |
05257284 |
Oct 1993 |
JP |
5-265212 |
Oct 1993 |
JP |
05346668 |
Dec 1993 |
JP |
07028237 |
Jan 1995 |
JP |
07199467 |
Aug 1995 |
JP |
WO 9209934 |
Jun 1992 |
WO |
Non-Patent Literature Citations (1)
Entry |
Chemical Abstract, vol. 116, No. 26, Jun. 29, 1992, Abstract No. 265368. |
Continuations (1)
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Number |
Date |
Country |
Parent |
08/365407 |
Dec 1994 |
US |
Child |
08/999394 |
|
US |