Claims
- 1. A semiconductor substrate having a spacing between at least two adjacent wiring lines, the substrate comprising:at least two wiring lines extending substantially, adjacently parallel along at least a portion of a longitudinal length of each, said at least two wiring lines defining a space therebetween along said at least said portions of said longitudinal lengths, said space defining a lateral width and a height thereof; and a plurality of hollow spheres disposed in said space between said at least two wiring lines along said at least said portions of said longitudinal lengths, each of said plurality of hollow spheres having a substantially equal diameter; wherein said lateral width of said space substantially corresponds with at least one of said diameter and an integer multiple of said diameter of said plurality of hollow spheres; and wherein said height of said space substantially corresponds with at least one of said diameter and an integer multiple of said diameter of said plurality of hollow spheres.
- 2. The semiconductor substrate of claim 1, wherein each of said plurality of hollow spheres defines an internal void surrounded by a material.
- 3. The semiconductor substrate of claim 2, wherein said internal void comprises a non-solid material.
- 4. The semiconductor substrate of claim 2, wherein said internal void comprises a dielectric constant which is less that a dielectric constant of said material.
- 5. The semiconductor substrate of claim 2, wherein said material comprises a dielectric material.
- 6. The semiconductor substrate of claim 2, wherein said internal void comprises a gas therein.
- 7. The semiconductor substrate of claim 1, wherein each of said plurality of hollow spheres comprises a substantially rigid surface.
- 8. The semiconductor substrate of claim 1, wherein said hollow spheres of said plurality comprise a ratio of outer diameter to wall thickness of approximately 10:1.
- 9. The semiconductor substrate of claim 1, wherein said diameter of said hollow spheres of said plurality is at least 0.1 microns.
- 10. The semiconductor substrate of claim 1, wherein said hollow spheres of said plurality comprise a silica material.
- 11. A semiconductor substrate comprising:at least two wiring lines extending substantially, adjacently parallel to each other, said at least two wiring lines defining a space therebetween, said space defining a lateral width and a height thereof; and a plurality of hollow spheres disposed in said space between said at least two wiring lines, each of said plurality of hollow spheres having a substantially equal diameter; wherein said lateral width of said space substantially corresponds with at least one of said diameter and an integer multiple of said diameter of said plurality of hollow spheres; and wherein said height of said space substantially corresponds with at least one of said diameter and an integer multiple of said diameter of said plurality of hollow spheres.
- 12. The semiconductor substrate of claim 11, wherein each of said plurality of hollow spheres defines an internal void surrounded by a material.
- 13. The semiconductor substrate of claim 12, wherein said internal void comprises a non-solid material.
- 14. The semiconductor substrate of claim 12, wherein said internal void comprises a dielectric constant which is less that a dielectric constant of said material.
- 15. The semiconductor substrate of claim 12, wherein said material comprises a dielectric material.
- 16. The semiconductor substrate of claim 12, wherein said internal void comprises a gas therein.
- 17. The semiconductor substrate of claim 11, wherein each of said plurality of hollow spheres comprises a substantially rigid surface.
- 18. The semiconductor substrate of claim 11, wherein said hollow spheres of said plurality comprise a ratio of outer diameter to wall thickness of approximately 10:1.
- 19. The semiconductor substrate of claim 11, wherein said diameter of said hollow spheres of said plurality is at least 0.1 microns.
- 20. The semiconductor substrate of claim 11, wherein said hollow spheres of said plurality comprise a silica material.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of application Ser. No. 09/515,519, filed Feb. 29, 2000, now U.S. Pat. No. 6,396,119, issued May 28, 2002, which is a continuation of application Ser. No. 09/207,890, filed Dec. 8, 1998, now U.S. Pat. No. 6,309,946 B1, issued Oct. 30, 2001, which is continuation of application Ser. No. 08/723,263, filed Sep. 30, 1996, now U.S. Pat. No. 5,835,987, issued Nov. 10, 1998; which is a divisional of application Ser. No. 08/550,916, filed Oct. 31, 1995, abandoned.
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Nov 1988 |
JP |
404079333 |
Mar 1992 |
JP |
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Entry |
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Continuations (3)
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Number |
Date |
Country |
Parent |
09/515519 |
Feb 2000 |
US |
Child |
10/156515 |
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US |
Parent |
09/207890 |
Dec 1998 |
US |
Child |
09/515519 |
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US |
Parent |
08/723263 |
Sep 1996 |
US |
Child |
09/207890 |
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US |