SEMICONDUCTOR DEVICE

Abstract

A semiconductor device of an embodiment includes a lead frame; a first bonding material; a semiconductor chip including a lower surface, an upper surface, a first electrode connected to the first bonding material, a second electrode provided on the upper surface, and electrode pads connected to the second electrode; second bonding materials provided on each of the electrode pads; and a first connector connected to at least one of the second bonding materials, wherein the second bonding material which is not connected to the first connector is not connected to a connector or a wire.

Description

Claims

1. A semiconductor device comprising: a lead frame;a first bonding material provided on the lead frame;a semiconductor chip provided on the first bonding material, the semiconductor chip including a lower surface,an upper surface,a first electrode provided on the lower surface, the first electrode being connected to the first bonding material,a second electrode provided on the upper surface, anda plurality of electrode pads connected to the second electrode;a plurality of second bonding materials, each of the second bonding materials being provided on each of the electrode pads; anda first connector connected to at least one of the second bonding materials,wherein the second bonding material which is not connected to the first connector is not connected to a connector or a wire.

2. The semiconductor device according to claim 1, wherein the semiconductor chip further includes a first semiconductor layer of first conductivity type provided on the first electrode,a first semiconductor region of second conductivity type provided on the first semiconductor layer,a second semiconductor region of first conductivity type provided on the first semiconductor region,the second electrode provided on the second semiconductor region, the second electrode being electrically connected to the second semiconductor region, anda third electrode provided in a first trench, the first trench reaching the first semiconductor layer from above the first semiconductor region, the third electrode facing the first semiconductor layer via a first insulating film, wherein the first trench extends in a first direction parallel to the upper surface, andwherein the electrode pad which is provided above the first trench and which is not connected to the first connector via the second bonding material extends in a second direction, the second direction is parallel to the upper surface and intersects the first direction.

3. The semiconductor device according to claim 2, wherein the first connector is connected to at least two electrode pads of the electrode pads, andwherein the semiconductor device further comprising: a conductive line connected to the third electrode, the conductive line being provided below between the two electrode pads of the electrode pads.

4. The semiconductor device according to claim 2, wherein the semiconductor chip further includes a fourth electrode provided in a second trench, the second trench reaching the first semiconductor layer from above the first semiconductor region, the fourth electrode facing the first semiconductor layer via a second insulating film, wherein the second trench extends in a third direction parallel to the upper surface and intersecting the first direction, andwherein the electrode pad which is provided above the second trench and which is not connected to the first connector via the second bonding material extends in a fourth direction, the fourth direction is parallel to the upper surface and intersects the third direction.

5. The semiconductor device according to claim 1, wherein each of the first electrode pads includes Ni or Cu.

6. A semiconductor device comprising: a lead frame;a first bonding material provided on the lead frame;a semiconductor chip provided on the first bonding material, the semiconductor chip including a lower surface,an upper surface,a first electrode provided on the lower surface, the first electrode being connected to the first bonding material,a second electrode provided on the upper surface, anda plurality of electrode pads connected to the second electrode;a plurality of second bonding materials, each of the second bonding materials being provided on each of the electrode pads;a first connector connected to at least one of the second bonding materials; anda sealing resin provided on the second bonding material not being connected to the first connector.

7. The semiconductor device according to claim 6, further comprising: a second connector connected to the second bonding material, the second bonding material not being connected to the first connector.

8. The semiconductor device according to claim 7, wherein the semiconductor chip further includes a first semiconductor layer of first conductivity type provided on the first electrode,a first semiconductor region of second conductivity type provided on the first semiconductor layer,a second semiconductor region of first conductivity type provided on the first semiconductor region,the second electrode provided on the second semiconductor region, the second electrode being electrically connected to the second semiconductor region, anda third electrode provided in a first trench, the first trench reaching the first semiconductor layer from above the first semiconductor region, the third electrode facing the first semiconductor layer via a first insulating film, wherein the first trench extends in a first direction parallel to the upper surface, andwherein the electrode pad which is provided above the first trench and which is not connected to the first connector via the second bonding material extends in a second direction which is parallel to the upper surface and which intersects the first direction.

9. The semiconductor device according to claim 8, wherein the first connector is connected to at least two electrode pads of the electrode pads, andwherein the semiconductor device further comprising: a conductive line connected to the third electrode, the conductive line being provided below between the two electrode pads of the electrode pads.

10. The semiconductor device according to claim 8, wherein the semiconductor chip further includes a fourth electrode provided in a second trench, the second trench reaching the first semiconductor layer from above the first semiconductor region, the fourth electrode facing the first semiconductor layer via a second insulating film, wherein the second trench extends in a third direction parallel to the upper surface and intersecting the first direction, andwherein the electrode pad which is provided above the second trench and which is not connected to the first connector via the second bonding material extends in a fourth direction which is parallel to the upper surface and which intersects the third direction.

11. The semiconductor device according to claim 6, wherein each of the electrode pads includes Ni or Cu.