Patent Application
20230238342
The present invention relates to semiconductor device fabrication and integrated circuits and, more specifically, to structures for a static random access memory bit cell and methods of forming a structure for a static random access memory bit cell.
Static random access memory (SRAM) may be used, for example, to temporarily store data in a computer system. An SRAM device includes an array of bit cells in which each individual bit cell holds a single bit of data during operation. Each SRAM bit cell may have a six-transistor (6T) design that includes a pair of cross-coupled inverters providing a storage element and a pair of pass-gate transistors connecting the inverters to complementary bit lines. The pass-gate transistors are controlled by word lines, which are used to select the SRAM memory cell for read or write operations. When continuously powered, the memory state of an SRAM device persists without the need for data refresh operations.
Transistors in a SRAM bit cell may exhibit a threshold voltage mismatch and isolation leakage, particularly for low minimum operating voltages (Vmin) and lower power operation. For example, asymmetric variations in well doping due to the effect of random dopant fluctuation on dopant concentration can lead to mismatches between the NMOS transistors participating in the inverters.
Improved structures for a static random access memory bit cell and methods of forming a structure for a static random access memory bit cell are needed.
In embodiments of the invention, a structure for a static random access memory is provided. The structure includes a first field-effect transistor on a first substrate and a second field-effect transistor on a second substrate. The first field-effect transistor includes a first gate, and the second field-effect transistor includes a second gate. The structure further includes a first interconnect structure on the first substrate and a second interconnect structure on the second substrate. The first interconnect structure includes a first metal feature connected to the first gate, and the second interconnect structure includes a second metal feature connected to the second gate. The first metal feature has a first surface, and the second metal feature has a second surface that is connected to the first surface of the first metal feature.
In embodiments of the invention, a method of forming a structure for a static random access memory is provided. The method includes forming a first field-effect transistor on a first substrate, forming a second field-effect transistor on a second substrate, forming a first interconnect structure on the first substrate, and forming a second interconnect structure on the second substrate. The first field-effect transistor includes a first gate, the second field-effect transistor includes a second gate, the first interconnect structure includes a first metal feature connected to the first gate, and the second interconnect structure includes a second metal feature connected to the second gate. The method further includes bonding a first surface of the first metal feature to a second surface of the second metal feature.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate various embodiments of the invention and, together with a general description given above and the detailed description given below, serve to explain the embodiments of the invention.
With reference to
Field-effect transistors 18, 20, 22, 24 may be fabricated by front-end-of-line processing as device structures in the active regions 14, 16 of the substrate 10. The field-effect transistors 18, 22 include respective gates 26, 27 and source/drain regions 28, 29, 30 that are formed in the active region 14 of the substrate 10. The field-effect transistors 20, 24 may include respective gates 36, 37 and source/drain regions 38, 39, 40 that are formed in the active region 16 of the substrate 10. The gates 26, 27 and gates 36, 37 may be formed, for example, by patterning a deposited layer of heavily-doped polysilicon with lithography and etching processes, and the source/drain regions 28, 29, 30 and source/drain regions 38, 39, 40 may be formed by a masked ion implantation or diffusion of, for example, an n-type dopant (e.g., arsenic or phosphorus) into the substrate 10. The field-effect transistors 18, 20, 22, 24 may include other structural features, such as a gate dielectric, gate sidewall spacers, etc. The field-effect transistors 18, 20, 22, 24 are formed in the same well 15 in the substrate 10, not in different wells separated by a well of opposite conductivity type as in a conventional SRAM.
The field-effect transistors 18, 20, 22, 24 may provide the n-type metal-oxide-semiconductor (NMOS) transistors that can be used to build a SRAM bitcell, such as a six-transistor (6T) SRAM bitcell. In particular, the field-effect transistor 18 and the field-effect transistor 20 may provide pull-down transistors of the SRAM bitcell, and the field-effect transistor 22 and the field-effect transistor 24 may provide pass-gate transistors of the SRAM bitcell.
Middle-of-line processing and back-end-of-line processing follow to form an interconnect structure having contacts, vias, and wiring that are coupled to the field-effect transistors 18, 20, 22, 24. The interconnect structure is positioned on the substrate 10 over the field-effect transistors 18, 20, 22, 24. The interconnect structure may include a contact level, a first metallization level, and a second metallization level in which the first metallization level is arranged in a vertical direction between the contact level and the second metallization level.
The contact level, which may be formed in a dielectric layer of the interconnect structure, includes a node contact 32 physically and electrically connected to the source/drain region 28, a node contact 34 physically and electrically connected to the source/drain region 38, a contact 44 physically and electrically connected to the source/drain region 29, a contact 45 physically and electrically connected to the source/drain region 40, a bit line contact 46 physically and electrically connected to the source/drain region 30, a bit line contact 47 physically and electrically connected to the source/drain region 39, a pull-down contact 48 physically and electrically connected to the gate 26, and a pull-down contact 49 physically and electrically connected to the gate 36. A word line contact (not shown) is physically and electrically connected to the gate 27, and another word line contact (not shown) is physically and electrically connected to the gate 37.
The first metallization level, which is formed in one or more interlayer dielectric layers of the interconnect structure, includes a metal feature 52 providing a bit line that is connected by the bit line contact 46 to the source/drain region 30, a metal feature 53 providing another bit line that is connected by the bit line contact 47 to the source/drain region 39, metal features 54, 55 that connect the source/drain region 29 and the source/drain region 40 to system ground (Vss), and additional metal features 56, 57, 58, 59.
The second metallization level, which is formed in one or more interlayer dielectric layers of the interconnect structure, includes a metal feature 60 that is connected to the gate 26 of the field-effect transistor 18 by the metal feature 56 and the pull-down contact 48, a metal feature 61 that is connected to the source/drain region 28 by the metal feature 57 and the node contact 32, a metal feature 62 that is connected to the gate 36 of the field-effect transistor 20 by the metal feature 59 and the pull-down contact 49, and a metal feature 63 that is connected to the source/drain region 38 by the metal feature 58 and the node contact 34. The metal features 52-59 of the first metallization level are positioned in a vertical direction between the metal features 60-63 of the second metallization level and the field-effect transistors 18, 20, 22, 24. In an embodiment, the metal features 60-63 in the second metallization level may be comprised of copper. The metal features 60-63 in the second metallization level define pads that are accessible for metal-to-metal bonding to other pads.
The first and second metallization levels of the interconnect structure may be formed by patterning, deposition, and polishing techniques characteristic of a damascene process. Specifically, the one or more interlayer dielectric layers belonging to each metallization level may be deposited and patterned using lithography and etching processes to define trenches that are filled by a planarized metal (e.g., copper) to define the metal features 52-59 and the metal features 60-63.
With reference to
Field-effect transistors 70, 72 may be fabricated by front-end-of-line processing as device structures in the active regions 66, 68 of the substrate 64. The field-effect transistors 70, 72 may include shared gates 74, 75, source/drain regions 76, 77 that are formed in the active region 66 of the substrate 64, and source/drain regions 78, 79 that are formed in the active region 68 of the substrate 64. The gates 74, 75 may be formed, for example, by patterning a deposited layer of heavily-doped polysilicon with lithography and etching processes, and the source/drain regions 76, 77 and source/drain regions 78, 79 may be formed by a masked ion implantation or diffusion of, for example, a p-type dopant (e.g., boron) into the substrate 64. The field-effect transistors 70, 72 may include other structural elements, such as a gate dielectric, gate sidewall spacers, etc. The field-effect transistors 70, 72 are formed in the well 65, which is not laterally arranged in the substrate 64 between wells of opposite conductivity type as in a conventional SRAM.
The field-effect transistors 70, 72 may provide the p-type metal-oxide-semiconductor (PMOS) transistors that can be used to build an SRAM bitcell. In particular, the field-effect transistor 70 and the field-effect transistor 72 may provide pull-up transistors of the SRAM bitcell. The field-effect transistors 70, 72 are formed using a different substrate 64 than the substrate 10 on which the NMOS transistors of the SRAM bitcell are formed.
Middle-of-line processing and back-end-of-line processing follow to form an interconnect structure having contacts, vias, and wiring that are coupled to the field-effect transistors 70, 72. The interconnect structure is positioned on the substrate 64 over the field-effect transistors 70, 72. The interconnect structure may include a contact level, a first metallization level, and a second metallization level in which the first metallization level is arranged in a vertical direction between the contact level and the second metallization level.
The contact level, which is formed in a dielectric layer of the interconnect structure, includes a node contact 80 physically and electrically connected to the gate 75 and source/drain region 77, a node contact 82 physically and electrically connected to the gate 74 and source/drain region 79, a contact 84 physically and electrically connected to the source/drain region 76, a contact 85 physically and electrically connected to the source/drain region 78, a pull-up contact 86 physically and electrically connected to the gate 74, and a pull-up contact 87 physically and electrically connected to the gate 75.
The first metallization level, which is formed in one or more interlayer dielectric layers of the interconnect structure, includes metal features 88, 89 that connect the source/drain region 76 and the source/drain region 78 to a supply voltage (Vdd), and metal features 90, 91, 92, 93. The second metallization level, which is formed in one or more interlayer dielectric layers of the interconnect structure, includes a metal feature 94 that is connected to the gate 74 of the field-effect transistor 70 by the metal feature 90 and the pull-up contact 86, a metal feature 95 that is connected by the node contact 80 to the gate 75 and source/drain region 77, a metal feature 96 that is connected by the node contact 82 to the gate 74 and source/drain region 79, and a metal feature 97 that is connected to the gate 75 by the metal feature 93 and the pull-up contact 87. The metal features 88-93 of the first metallization level are positioned in a vertical direction between the metal features 94-97 of the second metallization level and the field-effect transistors 70, 72. In an embodiment, the metal features 94-97 in the second metallization level may be comprised of copper. The metal features 94-97 in the second metallization level define pads that are accessible for metal-to-metal bonding to other pads, such as the metal features 60-63 (
The first and second metallization levels of the interconnect structure may be formed by patterning, deposition, and polishing techniques characteristic of a damascene process. Specifically, the one or more dielectric layers belonging to each metallization level may be deposited and patterned using lithography and etching processes to define trenches that are filled by a planarized metal (e.g., copper) to define the metal features 88-93 and the metal features 94-97.
With reference to
The face-to-face metal feature bonding may be provided by a metal-to-metal bonding technique. In an embodiment, the metal features 94, 95 may be joined by respective physical bonds to the metal features 60, 61, and the metal features 96, 97 may be joined by respective physical bonds to the metal features 62, 63 through direct bonding without the presence of an intermediate layer. The metal features 60, 61 and the metal features 96, 97 may be placed into respective surface-to-surface contacting relationships, and a low temperature thermal treatment or anneal may be performed at a sufficient temperature and for a sufficient duration to generate metal-to-metal bonding. For example, a representative bonding process may include a thermal anneal conducted at a temperature in a range of 350° C. to 450° C. and for a duration of 20 minutes to 60 minutes. Optionally, the substrate 10 and the substrate 64 may be clamped together during the thermal anneal to provide an external applied force for performing thermocompression bonding. The thermal anneal, which may be conducted in the presence or absence of an applied external force, may be performed in a controlled atmosphere containing a non-oxidizing gas, such as nitrogen gas.
The SRAM bitcell is formed with a three-dimensional integration in which the NMOS and PMOS transistors are separately fabricated and then joined by face-to-face metal feature bonding (i.e., three-dimensional (3D) hybrid bonding). The threshold voltage mismatch for the field-effect transistors 18, 20, 22, 24 constituting the NMOS transistors of the SRAM bitcell may be reduced because the field-effect transistors 18, 20, 22, 24 providing the inverters are formed in the same well, not in separate wells as in a conventional SRAM bitcell, which is facilitated by the face-to-face metal feature bonding.
With reference to
In an embodiment, three-dimensional (3-D) via openings may be etched that extend to the metal features 52, 54, 88, and a metal, such as tungsten, may be deposited and planarized to fill the 3-D vias to form the inter-tier vias 110, 112, 114. Backside vias and metallization (not shown) may be formed to provide pads for establishing external connections with the inter-tier vias 110.
While not shown, a set of inter-tier vias similar to the inter-tier vias 110, 112, 114 may be formed that extend to the metal features 53, 55, 89 for backend routing of electrical connections to the field-effect transistors 20, 24 and field-effect transistor 72 of
With reference to
The methods as described above are used in the fabrication of integrated circuit chips. The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (e.g., as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. The chip may be integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either an intermediate product or an end product. The end product can be any product that includes integrated circuit chips, such as computer products having a central processor or smartphones.
References herein to terms modified by language of approximation, such as “about”, “approximately”, and “substantially”, are not to be limited to the precise value specified. The language of approximation may correspond to the precision of an instrument used to measure the value and, unless otherwise dependent on the precision of the instrument, may indicate a range of +/−10% of the stated value(s).
References herein to terms such as “vertical”, “horizontal”, etc. are made by way of example, and not by way of limitation, to establish a frame of reference. The term “horizontal” as used herein is defined as a plane parallel to a conventional plane of a semiconductor substrate, regardless of its actual three-dimensional spatial orientation. The terms “vertical” and “normal” refer to a direction perpendicular to the horizontal, as just defined. The term “lateral” refers to a direction within the horizontal plane.
A feature “connected” or “coupled” to or with another feature may be directly connected or coupled to or with the other feature or, instead, one or more intervening features may be present. A feature may be “directly connected” or “directly coupled” to or with another feature if intervening features are absent. A feature may be “indirectly connected” or “indirectly coupled” to or with another feature if at least one intervening feature is present. A feature “on” or “contacting” another feature may be directly on or in direct contact with the other feature or, instead, one or more intervening features may be present. A feature may be “directly on” or in “direct contact” with another feature if intervening features are absent. A feature may be “indirectly on” or in “indirect contact” with another feature if at least one intervening feature is present. Different features “overlap” if a feature extends over, and covers a part of, another feature.
The descriptions of the various embodiments of the present invention have been presented for purposes of illustration but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
