Patent Application
20240014153
The present disclosure relates to a substrate bonding system and a method for substrate bonding.
When forming an electrode pad by chemical mechanical polishing, dishing (recess) may occur in which the central portion of the electrode pad is excessively etched to have a dish-like shape. If substrates are bonded to each other in a state in which dishing has occurred, the contact area between electrode pads becomes small, and thus contact resistance is increased. As one example of a method for increasing the contact area between the electrode pads, there are known techniques in which substrates are bonded after connection metals with planarized upper surfaces are formed on respective electrode pads disposed on different substrates (see, for example, Patent Document 1).
[Patent document 1] Japanese Unexamined Patent Application Publication No. 2016-21497
The present disclosure provides a technique capable of bonding lines with high reliability.
A substrate bonding system in one manner of the present disclosure includes a surface treatment module configured to perform plasma processing on a surface of a substrate. The substrate bonding system includes a deposition module coupled to the surface treatment module such that the substrate is transferred to the deposition module without being exposed to atmosphere, the deposition module being configured to perform a deposition process on the substrate on which the plasma processing is performed in the surface treatment module. The substrate bonding system includes a bonding module coupled to the deposition module such that the substrate is transferred to the bonding module without exposing the substrate to the atmosphere, the bonding module being configured to bond substrates on which the deposition process is performed in the deposition module, to form a bonded body.
According to the present disclosure, lines are enabled to be bonded together with high reliability.
Non-limiting exemplary embodiments of the present disclosure will be described below with reference to the accompanying drawings. In all of the accompanying drawings, the same or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant description is omitted accordingly.
[Substrate Bonding]
When manufacturing a semiconductor device having a three-dimensional structure, hybrid bonding is used in which two substrates, each of which has a metal (electrode pad) and an insulating film on a surface of the substrate, after performing a line process (BEOL: Back End of Line), are prepared, and then metals are bonded together with insulating films of the two substrates. In the hybrid bonding, the surface of each substrate is planarized by chemical mechanical polishing (CMP) in the line process.
In a planarization process by the CMP, as illustrated in
Also, in the planarization process by the CMP, as illustrated in
However, in the planarization process by the CMP, it is difficult to control recess amounts of surfaces of the metals 102 and 202 with respect to the respective surfaces of the insulating films 101 and 201.
In the planarization process by the CMP, there are cases where dishing (recess) in which the central portion of the metal is excessively etched and thus has a dish shape may occur.
The outermost surface of the substrate after the CMP is processed with a corrosion inhibitor such as benzotriazole (BTA) in order to reduce corrosion or oxidation of the metal, but the corrosion inhibitor is removed by an etching solution such as an acid in the atmosphere, before bonding two substrates. With this approach, metal surfaces of the two substrates before bonding are each oxidized to form an oxide film. If bonding is performed in a state in which the oxide film is formed at an interface surface between the two substrates, minute defects (voids) are generated at the interface surface, and thus bonding strength is reduced. As a result, reliability is reduced. In addition, in the atmosphere, gases or the like are likely to be adsorbed on the interface surface between two substrates due to moisture or the like. If bonding is performed in a state in which the gases or the like are adsorbed on the interface surface between the two substrates, bubbles (voids) are generated at the interface surface, and thus bonding strength is reduced. As a result, reliability is reduced.
Hereinafter, a substrate bonding system and a method for substrate bonding that are capable of controlling a surface shape of the outermost surface of each substrate and thereby enabling lines to be bonded to each other with high reliability will be described.
(Substrate Bonding System)
A first configuration example of the substrate bonding system according to the first embodiment will be described with reference to
As illustrated in
The surface treatment module SM11 is coupled to the vacuum transfer chamber TM11 via a gate valve G11a. The interior of the surface treatment module SM11 is depressurized to a predetermined vacuum atmosphere. The surface treatment module SM11 accommodates, for example, two substrates W1 therein, and performs plasma processing on the surfaces of the two substrates W1 to remove contaminants, natural oxide films, and the like that are generated on the surfaces of the substrates W1. The plasma processing may include, for example, a process using radicals. Examples of the radicals include H radicals (H*) and NH radicals (NH*). The radicals are generated, for example, by supplying a gas for plasma formation to the surface treatment module SM11, and by activating the gas for plasma formation using a plasma formation apparatus. Examples of the gas for plasma formation include H2, NH3, and CF4. The plasma processing may include a process using ion energy of plasma ions. Examples of the plasma ions include N+, Ar+, and H+. The plasma ions are generated, for example, by supplying the gas for plasma formation to the surface treatment module SM11, and by activating the gas for plasma formation using a plasma formation apparatus. Examples of the gas for plasma formation include N2, Ar, and H2. The plasma processing may include, for example, a combination of a process using radicals and a process using ion energy of plasma ions. However, from the viewpoint of reducing damage to the substrate W1, the plasma processing preferably includes the process using radicals. Examples of the plasma formation apparatus include a microwave plasma apparatus, an inductively coupled plasma (ICP) apparatus, a capacitively coupled plasma (CCP) apparatus, and a surface wave plasma (SWP) apparatus.
The deposition module DM11 is coupled to the vacuum transfer chamber TM11 via a gate valve G11b. The interior of the deposition module DM11 is depressurized to a predetermined vacuum atmosphere. The deposition module DM11 accommodates, for example, the two substrates W1 therein, and performs a deposition process on the two substrates W1 to selectively deposit an insulating film in a predetermined region of each of the substrates W1. As described above, the deposition module DM11 is a processing module that selectively deposits the insulating film in the predetermined region, and is also referred to as a selective deposition module. An example of the insulating film includes a fluorine-added silicon oxide film (SiOF). The insulating film is deposited, for example, by atomic layer deposition (ALD) or chemical vapor deposition (CVD). Examples of the gas used in the ALD and the CVD include a process gas, such as SiF4, O2, or Ar, and a purge gas, such as H2, Ar, or N2. The process gas and the purge gas may be also activated using a plasma formation apparatus. Examples of the plasma formation apparatus include a microwave plasma apparatus, an ICP apparatus, a CCP apparatus, and a SWP apparatus.
The bonding module BM11 is coupled to the vacuum transfer chamber TM11 via a gate valve G11c. The interior of the bonding module BM11 is depressurized to a predetermined vacuum atmosphere. The bonding module BM11 bonds two substrates W1 to form a bonded body W2, by performing hybrid bonding in which electrodes are bonded together with insulating layers.
The heat treatment module AM11 is coupled to the vacuum transfer chamber TM11 via a gate valve G11d. The interior of the heat treatment module AM11 is depressurized to a predetermined vacuum atmosphere. The heat treatment module AM11 accommodates, for example, the bonded body W2 therein, and performs heat treatment of the bonded body W2, thereby increasing bonding strength of the two substrates W1 that constitute the bonded body W2. In the present embodiment, the heat treatment module AM11 includes, for example, a laser annealing apparatus or a lamp annealing apparatus.
The vacuum transfer chamber TM11 has a pentagonal shape in a plan view. The interior of the vacuum transfer chamber TM11 is depressurized to a predetermined vacuum atmosphere. A vacuum transfer robot (not illustrated) that is capable of transferring the substrates W1 and the bonded body W2 in a reduced pressure state is provided in the vacuum transfer chamber TM11. The vacuum transfer robot vacuum-transfers the substrates W1 between the surface treatment module SM11, the deposition module DM11, the bonding module BM11, the heat treatment module AM11, and the load lock chambers LL11a and LL11b. The vacuum transfer robot also vacuum-transfers the bonded body W2 between the heat treatment module AM11 and the load lock chambers LL11a and LL11b.
The load lock chambers LL11a and LL11b are coupled to the vacuum transfer chamber TM11 via gate valves G11e and G11f, respectively. The interior of each of the load lock chambers LL11a and LL11b can be switched between an ambient atmosphere and a vacuum atmosphere. Each of the load lock chambers LL11a and LL11b receives the substrate W1 from outside of the substrate bonding system 1A, and the received substrate W1 and the bonded body W2 are transferred to the outside of the substrate bonding system 1A.
A second configuration example of the substrate bonding system according to the first embodiment will be described with reference to
As illustrated in
The surface treatment module SM12a, the deposition module DM12a, the bonding module BM12, and the load lock chambers LL12a and LL12b are coupled to the vacuum transfer chamber TM12a via gate valves G12a to G12e, respectively. The surface treatment module SM12b, the deposition module DM12b, the bonding module BM12, and load lock chambers LL12c and LL12d are coupled to the vacuum transfer chamber TM12b via gate valves G12f to G12j, respectively. The heat treatment module AM12 is coupled to the bonding module BM12 via a gate valve G12k, and is coupled to the load lock chamber LL12e via a gate valve G121.
The surface treatment modules SM12a and SM12b may have the same configuration as the surface treatment module SM11, except that each of the surface treatment modules SM12a and SM12b accommodates one substrate W1, and processes the substrate W1.
The deposition modules DM12a and DM12b may have the same configuration as the deposition module DM11, except that each of the deposition modules DM12a and DM12b accommodates one substrate W1, and processes the substrate W1.
The bonding module BM12 and the heat treatment module AM12 may have the same configurations as the bonding module BM11 and the heat treatment module AM11, respectively.
In the vacuum transfer chamber TM12a, a vacuum transfer robot vacuum-transfers the substrate W1 between the surface treatment module SM12a, the deposition module DM12a, the bonding module BM12, and the load lock chambers LL12a and LL12b. In the vacuum transfer chamber TM12b, a vacuum transfer robot vacuum-transfers the substrate W1 between the surface treatment module SM12b, the deposition module DM12b, the bonding module BM12, and the load lock chambers LL12c and LL12d.
The interior of each of the load lock chambers LL12a to LL12e can be switched between an ambient atmosphere and a vacuum atmosphere. Each of the load lock chambers LL12a to LL12d receives the substrate W1 from outside of the substrate bonding system 1B. In the load lock chamber LL12e, a bonded body W2 is transferred to the outside of the substrate bonding system 1B.
A third configuration example of the substrate bonding system according to the first embodiment will be described with reference to
As illustrated in
The load lock chamber LL13a, the surface treatment module SM13, the deposition module DM13, the bonding module BM13, the heat treatment module AM13, and the load lock chamber LL13b are arranged in a line in this order.
The interior of the load lock chamber LL13a can be switched between an ambient atmosphere and a vacuum atmosphere. Substrates W1 are transferred to the load lock chamber LL13a from outside of the substrate bonding system 1C.
The surface treatment module SM13 is coupled to the load lock chamber LL13a via a gate valve G13a. The substrates W1 are vacuum-transferred from the load lock chamber LL13a to the surface treatment module SM13. The surface treatment module SM13 may have the same configuration as the surface treatment module SM11.
The deposition module DM13 is coupled to the surface treatment module SM13 via a gate valve G13b. The substrates W1 are vacuum-transferred from the surface treatment module SM13 to the deposition module DM13. The deposition module DM13 may have the same configuration as the deposition module DM11.
The bonding module BM13 is coupled to the deposition module DM13 via a gate valve G13c. The substrates W1 are vacuum-transferred from the deposition module DM13 to the bonding module BM13. The bonding module BM13 may have the same configuration as the bonding module BM11.
The heat treatment module AM13 is coupled to the bonding module BM13 via a gate valve G13d. A bonded body W2 is vacuum-transferred from the bonding module BM13 to the heat treatment module AM13. The heat treatment module AM13 may have the same configuration as the heat treatment module AM11.
The load lock chamber LL13b is coupled to the heat treatment module AM13 via a gate valve G13e. The bonded body W2 is vacuum-transferred from the heat treatment module AM13 to the load lock chamber LL13b. The interior of the load lock chamber LL13b can be switched between an ambient atmosphere and a vacuum atmosphere. In the load lock chamber LL13b, the bonded body W2 that is heat-treated at the heat treatment module AM13 is transferred to the outside of the substrate bonding system 1C.
A fourth configuration example of the substrate bonding system according to the first embodiment will be described with reference to
As illustrated in
The load lock chamber LL14a, the surface treatment module SM14a, and the deposition module DM14a are arranged in a line in this order, and the deposition module DM14a is coupled to the bonding module BM14. The load lock chamber LL14b, the surface treatment module SM14b, and the deposition module DM14b are arranged in a line in this order, and the deposition module DM14b is coupled to the bonding module BM14. The load lock chamber LL14a, the surface treatment module SM14a, and the deposition module DM14a are arranged in parallel with the load lock chamber LL14b, the surface treatment module SM14b, and the deposition module DM14b.
The interior of each of the load lock chambers LL14a and LL14b can be switched between an ambient atmosphere and a vacuum atmosphere. A substrate W1 is transferred to each of the load lock chambers LL14a and LL14b from outside of the substrate bonding system 1D.
The surface treatment modules SM14a and SM14b are coupled to the load lock chambers LL14a and LL14b via gate valves G14a and G14b, respectively. Substrates W1 are vacuum-transferred from the load lock chambers LL14a and LL14b to the surface treatment modules SM14a and SM14b, respectively. The surface treatment modules SM14a and SM14b may have the same configuration as the surface treatment modules SM12a and SM12b.
The deposition modules DM14a and DM14b are coupled to the surface treatment modules SM14a and SM14b via gate valves G14c and G14d, respectively. The substrates W1 are vacuum-transferred to the deposition modules DM14a and DM14b from the surface treatment modules SM14a and SM14b, respectively. The deposition modules DM14a and DM14b may have the same configuration as the deposition modules DM12a and DM12b.
The bonding module BM14 is coupled to the deposition modules DM14a and DM14b via respective gate valves G14e and G14f. The substrate W1 is vacuum-transferred from each of the deposition modules DM14a and DM14b to the bonding module BM14. The bonding module BM14 may have the same configuration as the bonding module BM12.
The heat treatment module AM14 is coupled to the bonding module BM14 via a gate valve G14g. A bonded body W2 is vacuum-transferred from the bonding module BM14 to the heat treatment module AM14. The heat treatment module AM14 may have the same configuration as the heat treatment module AM12.
The load lock chamber LL14c is coupled to the heat treatment module AM14 via a gate valve G14h. The bonded body W2 is vacuum-transferred from the heat treatment module AM14 to the load lock chamber LL14c. The load lock chamber LL14c may have the same configuration as the load lock chamber LL12e.
(Method for Substrate Bonding)
As an example of the method for substrate bonding according to the first embodiment, a case in which substrates are bonded by the substrate bonding system 1A illustrated in
Each substrate 10 is first prepared. In the present embodiment, the upper surface of the substrate 10 has a conductive layer 11 and an insulating layer 12, as illustrated in
Subsequently, the interior of each of the load lock chambers LL11a and LL11b is switched to the ambient atmosphere. Then, the prepared substrates 10 are transferred, for example, into the respective load lock chambers LL11a and LL11b. Then, the interior of each of the load lock chambers LL11a and LL11b that accommodates the substrate 10 is switched from the ambient atmosphere to the vacuum atmosphere. Subsequently, the gate valves G11e, G11f, and G11a are opened, the substrate 10 in each of the load lock chambers LL11a and LL11b is transferred to the surface treatment module SM11 through a vacuum transfer robot in the vacuum transfer chamber TM11, and then the gate valves G11e and G11f, and G11a are closed.
Subsequently, the plasma processing is performed on the surface of each substrate 10. With this approach, the upper surface of the conductive layer 11 and the upper surface of the insulating layer 12 are cleaned. In the present embodiment, as illustrated in
Subsequently, the gate valves G11a and G11b are opened, substrates 10 that are processed within the surface treatment module SM11 are transferred to the deposition module DM11 through the vacuum transfer robot in the vacuum transfer chamber TM11, and then the gate valves G11a and G11b are closed.
Subsequently, a deposition process is performed on the substrates 10 on which plasma processing is performed in the surface treatment module SM11, to selectively deposit the insulating film 13 on the cleaned surface of each of respective insulating layers 12. In the present embodiment, as illustrated in
Subsequently, the gate valves G11b and G11c are opened, the substrates 10 that are processed within the deposition module DM11 are transferred to the bonding module BM11 through the vacuum transfer robot in the vacuum transfer chamber TM11, and then the gate valves G11b and G11c are closed.
Subsequently, the substrates 10 on which the deposition process is performed in the deposition module DM11 are bonded to form a bonded body 10X. In the present embodiment, as illustrated in
Subsequently, the gate valves G11c and G11d are opened, the bonded body 10X that is obtained within the bonding module BM11 is transferred to the heat treatment module AM11 by the vacuum transfer robot in the vacuum transfer chamber TM11, and then the gate valves G11c and Gild are closed.
Subsequently, the bonded body 10X formed in the bonding module BM11 is heat-treated. In the present embodiment, as illustrated in
Subsequently, the gate valves Gild and G11f are opened, the bonded body 10X heat-treated within the heat treatment module AM11 is transferred, for example, to the load-lock chamber LL11b through the vacuum transfer robot in the vacuum transfer chamber TM11, and then the gate valves Gild and G11f are closed. The load lock chamber LL11a may be used instead of the load lock chamber LL11b.
Subsequently, the interior of the load lock chamber LL11b is switched from the vacuum atmosphere to the ambient atmosphere, and the bonded body 10X is transferred from the interior of the load lock chamber LL11a to the outside of the substrate bonding system 1A.
According to the first embodiment described above, the upper surface of the conductive layer 11 and the upper surface of the insulating layer 12 are cleaned by performing plasma processing on the surface of each substrate 10. Then, the insulating film 13 is selectively deposited on the cleaned surface of the insulating layer 12 to control a surface shape. Then, two substrates 10 are bonded to form the bonded body 10X by performing hybrid bonding in which conductive layers 11 are bonded together with insulating layers 12 (insulating films 13) in a state where given surface shapes are controlled. With this approach, the contact area between the conductive layers 11 can be increased. As a result, contact resistance is reduced, and bonding strength is improved. That is, the conductive layers 11 can be bonded with high reliability.
Also, according to the first embodiment, the plasma processing in the surface treatment module, the selective deposition process in the deposition module, and the bonding process in the bonding module are continuously performed in this order without exposing each substrate 10 to the atmosphere. With this approach, contamination of the substrate 10, and oxidation and the like of the surface of the conductive layer 11, during transfer between modules can be reduced. As a result, generation of fine defects (voids) caused by a contaminant or an oxide film at the interface surface of the bonded body 10X is reduced, and thus bonding strength is improved.
Also, according to the first embodiment, the bonded body 10X is transferred from the bonding module to the heat treatment module without being exposed to the atmosphere, and is heat-treated after the bonding process. With this approach, productivity is improved and bonding strength is improved, in comparison to a case where the bonded body 10X is heat-treated outside the substrate bonding system.
(Substrate Bonding System)
A first configuration example of the substrate bonding system according to the second embodiment will be described with reference to
As illustrated in
The surface treatment module SM21, the SAM deposition module SDM21, the deposition module DM21, the bonding module BM21, and the heat treatment module AM21 are coupled to the vacuum transfer chamber TM21 via gate valves G21a to G21e, respectively. The load lock chambers LL21a and LL21b are coupled to the vacuum transfer chamber TM21 via gate valves G21f and G21g, respectively.
The surface treatment module SM21, the bonding module BM21, the heat treatment module AM21, the vacuum transfer chamber TM21, and the load lock chambers LL21a and LL21b may have the same configurations as the surface treatment module SM11, the bonding module BM11, the heat treatment module AM11, the vacuum transfer chamber TM11, and the load lock chambers LL11a and LL11b of the substrate bonding system 1A illustrated in
The interior of the SAM deposition module SDM21 is depressurized to a predetermined vacuum atmosphere. The SAM deposition module SDM21 accommodates, for example, two substrates W1 therein, and deposits a self-assembled monolayer film (SAM) on each of two substrates W1. In the present embodiment, the SAM deposition module SDM21 is a module that deposits a SAM on each substrate W1, for example, by vapor deposition, molecular layer deposition (MLD), or the like. In the present embodiment, the SAM is formed of a conductive material. However, the SAM may be formed of an insulating material.
The interior of the deposition module DM21 is depressurized to a predetermined vacuum atmosphere. The deposition module DM21 accommodates, for example, two substrates W1 therein, and performs a deposition process on the two substrates W1 to selectively deposit an insulating film in a predetermined region of each substrate W1. As described above, the deposition module DM21 is a processing module that selectively deposits the insulating film in the predetermined region, and is also referred to as a selective deposition module. The insulating film may include, for example, an aluminum oxide film (Al2O3). The insulating film is deposited, for example, by ALD or CVD. Examples of the gas used in the ALD or the CVD include a process gas, such as Al(CH3) or H2O, and a purge gas, such as H2, Ar, or N2. The process gas and the purge gas may be activated using a plasma formation apparatus. Examples of the plasma formation apparatus include a microwave plasma apparatus, an ICP apparatus, a CCP apparatus, and a SWP apparatus.
A second configuration example of the substrate bonding system according to the second embodiment will be described with reference to
As illustrated in
The surface treatment module SM22a, the SAM deposition module SDM22a, the deposition module DM22a, the bonding module BM22, and the load lock chambers LL22a and LL22b are coupled to the vacuum transfer chamber TM22a via gate valves G22a to G22f, respectively. The surface treatment module SM22b, the SAM deposition module SDM22b, the deposition module DM22b, the bonding module BM22, and the load lock chambers LL22c and LL22d are coupled to the vacuum transfer chamber TM22b via gate valves G22g to G221, respectively. The heat treatment module AM22 is coupled to the bonding module BM22 via a gate valve G22m, and is coupled to the load lock chamber LL22e via a gate valve G22n.
The surface treatment modules SM22a and SM22b may have the same configuration as the surface treatment modules SM12a and SM12b.
Each of the SAM deposition modules SDM22a and SDM22b may have the same configuration as the SAM deposition module SDM21, except that each of the SAM deposition modules SDM22a and SDM22b accommodates one substrate W1 therein, and performs a process on the substrate.
The deposition modules DM22a and DM22b may have the same configuration as the deposition modules DM12a and DM12b.
The bonding module BM22 and the heat treatment module AM22 may have the same configurations as the bonding module BM12 and the heat treatment module AM12, respectively.
In the vacuum transfer chamber TM22a, a vacuum transfer robot vacuum-transfers the substrate W1 between the surface treatment module SM22a, the SAM deposition module SDM22a, the deposition module DM22a, the bonding module BM22, and the load lock chambers LL22a and LL22b. In the vacuum transfer chamber TM22b, a vacuum transfer robot vacuum-transfers the substrate W1 between the surface treatment module SM22b, the SAM deposition module SDM22b, the deposition module DM22b, the bonding module BM22, and the load lock chambers LL22c and LL22d.
The load lock chambers LL22a to LL22e may have the same configuration as the load lock chambers LL12a to LL12e.
A third configuration example of the substrate bonding system according to the second embodiment will be described with reference to
As illustrated in
The load lock chamber LL23a, the surface treatment module SM23, the SAM deposition module SDM23, the deposition module DM23, the bonding module BM23, the heat treatment module AM23, and the load lock chamber LL23b are arranged in a line in this order.
The interior of the load lock chamber LL23a can be switched between an ambient atmosphere and a vacuum atmosphere. Substrates W1 are transferred to the load lock chamber LL23a from outside of the substrate bonding system 2C.
The surface treatment module SM23 is coupled to the load lock chamber LL23a via a gate valve G23a. The substrates W1 are vacuum-transferred from the load lock chamber LL23a to the surface treatment module SM23. The surface treatment module SM23 may have the same configuration as the surface treatment module SM21.
The SAM deposition module SDM23 is coupled to the surface treatment module SM23 via a gate valve G23b. The substrates W1 are vacuum-transferred from the surface treatment module SM23 to the SAM deposition module SDM23. The SAM deposition module SDM23 may have the same configuration as the SAM deposition module SDM21.
The deposition module DM23 is coupled to the SAM deposition module SDM23 via a gate valve G23c. The substrates W1 are vacuum-transferred from the SAM deposition module SDM23 to the deposition module DM23. The deposition module DM23 may have the same configuration as the deposition module DM21.
The bonding module BM23 is coupled to the deposition module DM23 via a gate valve G23d. The substrates W1 are vacuum-transferred from the deposition module DM23 to the bonding module BM23. The bonding module BM23 may have the same configuration as the bonding module BM21.
The heat treatment module AM23 is coupled to the bonding module BM23 via a gate valve G23e. A bonded body W2 is vacuum-transferred from the bonding module BM23 to the heat treatment module AM23. The heat treatment module AM23 may have the same configuration as the heat treatment module AM21.
The load lock chamber LL23b is coupled to the heat treatment module AM23 via a gate valve G23f. The bonded body W2 is vacuum-transferred from the heat treatment module AM23 to the load lock chamber LL23b. The interior of the load lock chamber LL23b can be switched between an ambient atmosphere and a vacuum atmosphere. In the load lock chamber LL23b, the bonded body W2 that is heat-treated at the heat treatment module AM23 is transferred to the outside of the substrate bonding system 2C.
A fourth configuration example of the substrate bonding system according to the second embodiment will be described with reference to
As illustrated in
The load lock chamber LL24a, the surface treatment module SM24a, the SAM deposition module SDM24a, and the deposition module DM24a are arranged in a line in this order, and the deposition module DM24a is coupled to the bonding module BM24. The load lock chamber LL24b, the surface treatment module SM24b, the SAM deposition module SDM24b, and the deposition module DM24b are arranged in a line in this order, and the deposition module DM24b is coupled to the bonding module BM24. The load lock chamber LL24a, the surface treatment module SM24a, the SAM deposition module SDM24a, and the deposition module DM24a are arranged in parallel with the load lock chamber LL24b, the surface treatment module SM24b, the SAM deposition module SDM24b, and the deposition module DM24b.
The interior of each of the load lock chambers LL24a and LL24b can be switched between an ambient atmosphere and a vacuum atmosphere. A substrate W1 is transferred to each of the load lock chambers LL24a and LL24b from outside of the substrate bonding system 2D.
The surface treatment modules SM24a and SM24b are coupled to the load lock chambers LL24a and LL24b via gate valves G24a and G24b, respectively. Substrates W1 are vacuum-transferred from the load lock chambers LL24a and LL24b to the surface treatment modules SM24a and SM24b, respectively. The surface treatment modules SM24a and SM24b may have the same configuration as the surface treatment modules SM22a and SM22b.
The SAM deposition modules SDM24a and SDM24b are coupled to the surface treatment modules SM24a and SM24b via gate valves G24c and G24d, respectively. The substrates W1 are vacuum-transferred from the surface treatment modules SM24a and SM24b to the SAM deposition modules SDM24a and SDM24b, respectively. The SAM deposition modules SDM24a and SDM24b may have the same configuration as the SAM deposition modules SDM22a and SDM22b.
The deposition modules DM24a and DM24b are coupled to the SAM deposition modules SDM24a and SDM24b via gate valves G24e and G24f, respectively. The substrates W1 are vacuum-transferred from the SAM deposition modules SDM24a and SDM24b to the deposition modules DM24a and DM24b, respectively. The deposition modules DM24a and DM24b may have the same configuration as the deposition modules DM22a and DM22b.
The bonding module BM24 is coupled to the deposition modules DM24a and DM24b via respective gate valves G24g and G24h. The substrate W1 is vacuum-transferred from each of the deposition modules DM24a and DM24b to the bonding module BM24. The bonding module BM24 may have the same configuration as the bonding module BM22.
The heat treatment module AM24 is coupled to the bonding module BM24 via a gate valve G24i. A bonded body W2 is vacuum-transferred from the bonding module BM24 to the heat treatment module AM24. The heat treatment module AM24 may have the same configuration as the heat treatment module AM22.
The load lock chamber LL24c is coupled to the heat treatment module AM24 via a gate valve G24j. The bonded body W2 is vacuum-transferred from the heat treatment module AM24 to the load lock chamber LL24c. The load lock chamber LL24c may have the same configuration as the load lock chamber LL22e.
(Method for Substrate Bonding)
As an example of the method for substrate bonding according to the second embodiment, a case where substrates are bonded by the substrate bonding system 2A illustrated in
Each substrate 20 is first prepared. In the present embodiment, as illustrated in
Subsequently, the interior of each of the load lock chambers LL21a and LL21b is switched to the ambient atmosphere. Then, the prepared substrates 20 are transferred, for example, to the respective load lock chambers LL21a and LL21b. Subsequently, the interior of each of the load lock chambers LL21a and LL21b in which the substrate 20 is accommodated is switched from the ambient atmosphere to the vacuum atmosphere. Subsequently, the gate valves G21f, G21g, and G21a are opened, the substrate 20 in each of the load-lock chambers LL21a and LL21b is transferred to the surface treatment module SM21 through the vacuum transfer robot in the vacuum transfer chamber TM21, and then the gate valves G21f, G21g, and G21a are closed.
Subsequently, plasma processing is performed on the surface of each substrate 20. With this approach, the upper surface of the conductive layer 21 and the upper surface of the insulating layer 22 are cleaned. In the present embodiment, as illustrated in
Subsequently, the gate valves G21a and G21b are opened, substrates 20 that are processed within the surface treatment module SM21 are transferred to the SAM deposition module SDM21 through the vacuum transfer robot in the vacuum transfer chamber TM21, and then the gate valves G21a and G21b are closed.
Subsequently, a deposition process is performed on each substrate 20 on which the plasma processing is performed in the surface treatment module SM21 to selectively deposit a SAM 23 on the cleaned surface of the conductive layer 21. In the present embodiment, as illustrated in
Subsequently, the gate valves G21b and G21c are opened, the substrates 20 that are processed in the SAM deposition module SDM 21 are transferred to the deposition module DM21 by the vacuum transfer robot in the vacuum transfer chamber TM11, and then the gate valves G21b and G21c are closed.
Subsequently, an insulating film 24 is selectively deposited on the cleaned surface of the insulating layer 22 by performing a deposition process on each substrate 20 on which the SAM23 is formed in the SAM deposition module SDM21. In the present embodiment, as illustrated in
Subsequently, the gate valves G21c and G21d are opened, substrates 20 that are processed within the deposition module DM21 are transferred to the bonding module BM21 through the vacuum transfer robot in the vacuum transfer chamber TM21, and then the gate valves G21c and G21d are closed.
Subsequently, the substrates 20 on which the deposition process is performed in the deposition module DM21 are bonded to form a bonded body 20X. In the present embodiment, as illustrated in
Subsequently, the gate valves G21d and G21e are opened, the bonded body 20X that is obtained within the bonding module BM21 is transferred to the heat treatment module AM21 through the vacuum transfer robot in the vacuum transfer chamber TM21, and then the gate valves G21d and G21e are closed.
Subsequently, the bonded body 20X that is formed in the bonding module BM21 is heat-treated. In the present embodiment, as illustrated in
Subsequently, the gate valves G21e and G21g are opened, the bonded body 20X that is heat-treated within the heat treatment module AM21 is transferred to, for example, the load-lock chamber LL21b through the vacuum transfer robot in the vacuum transfer chamber TM21, and then the gate valves G21e and G21g are closed. The load lock chamber LL21a may be used instead of the load lock chamber LL21b.
Subsequently, the interior of the load lock chamber LL21b is switched from the vacuum atmosphere to the ambient atmosphere, and the bonded body 20X is transferred from the interior of the load lock chamber LL21a to the outside of the substrate bonding system 2A.
According to the second embodiment described above, the upper surface of the conductive layer 21 and the upper surface of the insulating layer 22 are cleaned by performing plasma processing on the surface of each substrate 20. Then, the insulating film 24 is selectively deposited on the cleaned surface of the insulating layer 22 to control the surface shape. Then, two substrates 20 are bonded to form the bonded body 20X by performing hybrid bonding in which conductive layers 21 are bonded together with insulating layers 22 (insulating films 24) in a state where given surface shapes are controlled. Thus, the contact area between the conductive layers 21 can be increased. As a result, contact resistance is reduced, and bonding strength is improved. That is, the conductive layers 21 can be bonded with high reliability.
Also, according to the second embodiment, the plasma processing in the surface treatment module, the deposition process in the SAM deposition module, the deposition process in the deposition module, and the bonding process in the bonding module are continuously performed in this order without exposing substrates 20 to the atmosphere. With this approach, contamination of each substrate 20 and oxidation, and the like of the surface of the conductive layer 21, during transfer between modules can be reduced. As a result, generation of fine defects (voids) caused by a contaminant or an oxide film at the interface surface of the bonded body 20X is reduced, and thus bonding strength is improved.
Also, according to the second embodiment, the bonded body 20X is transferred from the bonding module to the heat treatment module without being exposed to the atmosphere, and then is heat-treated after the bonding process. With this approach, productivity is improved and bonding strength is improved, in comparison to a case where the bonded body 20X is heat-treated outside the substrate bonding system.
(Substrate Bonding System)
A first configuration example of the substrate bonding system according to the third embodiment will be described with reference to
As illustrated in
The surface treatment module SM31, the deposition module DM31, the bonding module BM31, and the heat treatment module AM31 are coupled to the vacuum transfer chamber TM31 via gate valves G31a to G31d, respectively. The load lock chambers LL31a and LL31b are coupled to the vacuum transfer chamber TM31 via gate valves G31e and G31f, respectively.
The surface treatment module SM31, the bonding module BM31, the heat treatment module AM31, the vacuum transfer chamber TM31, and the load lock chambers LL31a and LL31b may have the same configurations as the surface treatment module SM11, the bonding module BM11, the heat treatment module AM11, the vacuum transfer chamber TM11, and the load lock chambers LL11a and LL11b of the substrate bonding system 1A illustrated in
The interior of the deposition module DM31 is depressurized to a predetermined vacuum atmosphere. The deposition module DM31 accommodates, for example, two substrates W1 therein, and performs the deposition process on the two substrates W1 to selectively deposit a metal film in a predetermined region of each substrate W1. As described above, the deposition module DM11 is a processing module that selectively deposits the metal film in the predetermined region, and is also referred to as a selective deposition module. An example of the metal film includes platinum (Pt). The metal film is formed, for example, by ALD or CVD. Examples of the gas used in the ALD or the CVD include a process gas, such as (CH3C5H4)Pt(CH3)3, O2, or N2, and a purge gas such as N2. The process gas and the purge gas may be also activated using a plasma formation apparatus. Examples of the plasma formation apparatus include a microwave plasma apparatus, an ICP apparatus, a CCP apparatus, and a SWP apparatus.
A second configuration example of the substrate bonding system according to the third embodiment will be described with reference to
As illustrated in
The surface treatment module SM32a, the deposition module DM32a, the bonding module BM32, and the load lock chambers LL32a and LL32b are coupled to the vacuum transfer chamber TM32a via gate valves G32a to G32e, respectively. The surface treatment module SM32b, the deposition module DM32b, the bonding module BM32, and the load lock chambers LL32c and LL32d are coupled to the vacuum transfer chamber TM32b via gate valves G32f to G22j, respectively. The heat treatment module AM32 is coupled to the bonding module BM32 via a gate valve G32k, and is coupled to the load lock chamber LL32e via a gate valve G321.
The surface treatment modules SM32a and SM32b, DM32b, the bonding module BM32, the heat treatment module AM32, the vacuum transfer chambers TM32a and TM32b, and the load lock chambers LL32a to LL32e may have the same configurations as the surface treatment modules SM12a and SM12b, the bonding module BM12, the heat treatment module AM12, the vacuum transfer chambers TM12a and TM12b, and the load lock chambers LL12a to LL12e of the substrate bonding system 1B illustrated in
The deposition modules DM32a and DM32b may have the same configuration as the deposition module DM31.
A third configuration example of the substrate bonding system according to the third embodiment will be described with reference to
As illustrated in
The load lock chamber LL33a, the surface treatment module SM33, the deposition module DM33, the bonding module BM33, the heat treatment module AM33, and the load lock chamber LL33b are arranged in a line in this order.
The interior of the load lock chamber LL33a can be switched between an ambient atmosphere and a vacuum atmosphere. Substrates W1 are transferred to the load lock chamber LL33a from outside of the substrate bonding system 3C.
The surface treatment module SM33 is coupled to the load lock chamber LL33a via a gate valve G33a. The substrates W1 are vacuum-transferred from the load lock chamber LL33a to the surface treatment module SM33. The surface treatment module SM33 may have the same configuration as the surface treatment module SM31.
The deposition module DM33 is coupled to the surface treatment module SM33 via a gate valve G33b. The substrates W1 are vacuum-transferred from the surface treatment module SM33 to the deposition module DM33. The deposition module DM33 may have the same configuration as the deposition module DM31.
The bonding module BM33 is coupled to the deposition module DM33 via a gate valve G33c. The substrates W1 are vacuum-transferred from the deposition module DM33 to the bonding module BM33. The bonding module BM33 may have the same configuration as the bonding module BM31.
The heat treatment module AM33 is coupled to the bonding module BM33 via a gate valve G23d. A bonded body W2 is vacuum-transferred to the heat treatment module AM33 from the bonding module BM33. The heat treatment module AM33 may have the same configuration as the heat treatment module AM31.
The load lock chamber LL33b is coupled to the heat treatment module AM33 via a gate valve G33e. The bonded body W2 is vacuum-transferred from the heat treatment module AM33 to the load lock chamber LL33b. The interior of the load lock chamber LL33b can be switched between the ambient atmosphere and the vacuum atmosphere. In the load lock chamber LL33b, the bonded body W2 that is heat-treated in the heat treatment module AM33 is transferred to the outside of the substrate bonding system 3C.
A fourth configuration example of the substrate bonding system according to the third embodiment will be described with reference to
As illustrated in
The load lock chamber LL34a, the surface treatment module SM34a, and the deposition module DM34a are arranged in a line in this order, and the deposition module DM34a is coupled to the bonding module BM34. The load lock chamber LL34b, the surface treatment module SM34b, and the deposition module DM34b are arranged in a line in this order, and the deposition module DM34b is coupled to the bonding module BM34. The load lock chamber LL34a, the surface treatment module SM34a, and the deposition module DM34a are arranged in parallel with the load lock chamber LL34b, the surface treatment module SM34b, and the deposition module DM34b.
The interior of each of the load lock chambers LL34a and LL34b can be switched between an ambient atmosphere and a vacuum atmosphere. A substrate W1 is transferred to each of the load lock chambers LL34a and LL34b from outside of the substrate bonding system 3D.
The surface treatment modules SM34a and SM34b are coupled to the load lock chambers LL34a and LL34b via gate valves G34a and G34b, respectively. Substrates W1 are vacuum-transferred from the load lock chambers LL34a and LL34b to the surface treatment modules SM34a and SM34b, respectively. The surface treatment modules SM34a and SM34b may have the same configuration as the surface treatment modules SM32a and SM32b.
The deposition modules DM34a and DM34b are coupled to the surface treatment modules SM34a and SM34b via gate valves G34c and G34d, respectively. The substrates W1 are vacuum-transferred to the deposition modules DM34a and DM34b from the surface treatment modules SM34a and SM34b, respectively. The deposition modules DM34a and DM34b may have the same configuration as the deposition modules DM32a and DM32b.
The bonding module BM34 is coupled to the deposition modules DM34a and DM34b via respective gate valves G34e and G34f. The substrate W1 is vacuum-transferred from each of the deposition modules DM34a and DM34b to the bonding module BM34. The bonding module BM34 may have the same configuration as the bonding module BM32.
The heat treatment module AM34 is coupled to the bonding module BM34 via a gate valve G34g. A bonded body W2 is vacuum-transferred from the bonding module BM34 to the heat treatment module AM34. The heat treatment module AM34 may have the same configuration as the heat treatment module AM32.
The load lock chamber LL34c is coupled to the heat treatment module AM34 via a gate valve G34h. The bonded body W2 is vacuum-transferred from the heat treatment module AM34 to the load lock chamber LL34c. The load lock chamber LL34c may have the same configuration as the load lock chamber LL32e.
(Method for Substrate Bonding)
As an example of the method for substrate bonding according to the third embodiment, a case where substrates are bonded by the substrate bonding system 3A illustrated in
Each substrate 30 is first prepared. In the present embodiment, as illustrated in
Subsequently, the interior of each of the load lock chambers LL31a and LL31b is switched to the ambient atmosphere. Then, the prepared substrate 30 is transferred, for example, to each of the load lock chambers LL31a and LL31b. Subsequently, the interior of each of the load lock chambers LL31a and LL31b in which the substrate 30 is accommodated is switched from the ambient atmosphere to the vacuum atmosphere. Subsequently, the gate valves G31e, G31f, and G31a are opened, the substrate 30 in each of the load lock chambers LL31a and LL31b is transferred to the surface treatment module SM31 by the vacuum transfer robot in the vacuum transfer chamber TM31, and then the gate valves G31e, G31f, and G31a are closed.
Subsequently, plasma processing is performed on the surface of each substrate 30. With this approach, the upper surface of the conductive layer 31 and the upper surface of the insulating layer 32 are cleaned. In the present embodiment, as illustrated in
Subsequently, the gate valves G31a and G31b are opened, substrates 30 that are processed within the surface treatment module SM31 are transferred to the deposition module DM31 through the vacuum transfer robot in the vacuum transfer chamber TM31, and then the gate valves G31a and G31b are closed.
Subsequently, the deposition process is performed on each substrate 30 on which the plasma processing is performed in the surface treatment module SM31 to selectively deposit the metal film 33 on the cleaned surface of the conductive layer 31. In the present embodiment, as illustrated in
Subsequently, the gate valves G31b and G31c are opened, substrates 30 that are processed within the deposition module DM31 are transferred to the bonding module BM31 through the vacuum transfer robot in the vacuum transfer chamber TM31, and then the gate valves G31b and G31c are closed.
Subsequently, the substrates 30 on which the deposition process is performed in the deposition module DM31 are bonded to form a bonded body 30X. In the present embodiment, as illustrated in
Subsequently, the gate valves G31c and G31d are opened, and the bonded body 30X that is obtained within the bonding module BM31 is transferred to the heat treatment module AM31 through the vacuum transfer robot in the vacuum transfer chamber TM31, and then the gate valves G31c and G31d are closed.
Subsequently, the bonded body 30X that is formed in the bonding module BM31 is heat-treated. In the present embodiment, as illustrated in
Subsequently, the gate valves G31d and G31f are opened, the bonded body 30X that is heat-treated within the heat treatment module AM31 is transferred, for example, to the load-lock chamber LL31b through the vacuum transfer robot in the vacuum transfer chamber TM31, and then the gate valves G31d and G31f are closed. The load lock chamber LL31a may be used instead of the load lock chamber LL31b.
Subsequently, the interior of the load lock chamber LL31b is switched from the vacuum atmosphere to the ambient atmosphere, and the bonded body 30X is transferred from the interior of the load lock chamber LL31a to the outside of the substrate bonding system 3A.
According to the third embodiment described above, the upper surface of the conductive layer 31 and the upper surface of the insulating layer 32 are cleaned by performing plasma processing on the surface of each substrate 30. Then, the metal film 33 is selectively deposited on the cleaned surface of the conductive layer 31 to control the surface shape. Then, two substrates 30 are bonded by performing hybrid bonding in which conductive layers 31 (metal films 33) are bonded together with insulating layers 32 in a state where given surface shapes are controlled, thereby forming the bonded body 30X. With this approach, the contact area between the conductive layers 31 can be increased. As a result, contact resistance is reduced, and thus bonding strength is improved. That is, the conductive layers 31 can be bonded with high reliability.
Also, according to the third embodiment, the plasma processing in the surface treatment module, the selective deposition process in the deposition module, and the bonding processing in the bonding module are continuously performed in this order without exposing each substrate 30 to the atmosphere. Thus, contamination of the substrate 30, and oxidation of the surface of the conductive layer 31 and the like, during transfer between modules can be reduced. As a result, generation of fine defects (voids) caused by a contaminant or an oxide film at the interface surface of the bonded body 30X is reduced, and thus bonding strength is improved.
In addition, according to the third embodiment, the bonded body 30X is transferred from the bonding module to the heat treatment module without being exposed to the atmosphere, and is heat-treated after the bonding process. With this approach, productivity is improved and bonding strength is improved, in comparison to a case where the bonded body 30X is heat-treated outside the substrate bonding system.
(Substrate Bonding System)
A first configuration example of the substrate bonding system according to the fourth embodiment will be described with reference to
As illustrated in
The surface treatment module SM41, the SAM deposition module SDM41, the deposition module DM41, the bonding module BM41, and the heat treatment module AM41 are coupled to the vacuum transfer chamber TM41 via gate valves G41a to G41e, respectively. The load lock chambers LL41a and LL41b are coupled to the vacuum transfer chamber TM41 via gate valves G41f and G41g, respectively.
The surface treatment module SM41, the bonding module BM41, the heat treatment module AM41, the vacuum transfer chamber TM41, and the load lock chambers LL41a and LL41b may have the same configurations as the surface treatment module SM11, the bonding module BM11, the heat treatment module AM11, the vacuum transfer chamber TM11, and the load lock chambers LL11a and LL11b of the substrate bonding system 1A illustrated in
The interior of the SAM deposition module SDM41 is depressurized to a predetermined vacuum atmosphere. The SAM deposition module SDM41 accommodates, for example, two substrates W1 therein, and deposits a SAM film on each of the two substrates W1. In the present embodiment, the SAM deposition module SDM41 is a module that deposits a SAM on the substrate W1, for example, by vapor deposition, MLD, or the like. Examples of the gas used in the MLD include a process gas such as N, N-Dimethyltrimethylsilylamine (C5H15NSi). In the present embodiment, the SAM is formed of an insulating material.
The interior of the deposition module DM41 is depressurized to a predetermined vacuum atmosphere. The deposition module DM41 accommodates, for example, two substrates W1 therein, and performs a deposition process on each of the two substrates W1 to selectively deposit a metal film in a predetermined region of the substrate W1. As described above, the deposition module DM11 is a processing module that selectively deposits the metal film in the predetermined region, and is also referred to as a selective deposition module. As the metal film, for example, manganese (Mn) is used. The insulating film is formed by, for example, ALD or CVD. Examples of the gas used in the ALD or the CVD include a process gas, such as Bis (N, N-diisopropylpentylamidinato) manganese (II), H2, or NH3, and a purge gas, such as H2, NH3, Ar, or N2. The process gas and the purge gas may be also activated using a plasma formation apparatus. Examples of the plasma formation apparatus include a microwave plasma apparatus, an ICP apparatus, a CCP apparatus, and a SWP apparatus.
A second configuration example of the substrate bonding system according to the fourth embodiment will be described with reference to
As illustrated in
The surface treatment module SM42a, the SAM deposition module SDM42a, the deposition module DM42a, the bonding module BM42, and the load lock chambers LL42a and LL42b are coupled to the vacuum transfer chamber TM42a via gate valves G42a to G42f, respectively. The surface treatment module SM42b, the SAM deposition module SDM42b, the deposition module DM42b, the bonding module BM42, and the load lock chambers LL42c and LL42d are coupled to the vacuum transfer chamber TM42b via gate valves G42g to G421, respectively. The heat treatment module AM42 is coupled to the bonding module BM42 via a gate valve G42m, and is coupled to the load lock chamber LL42e via a gate valve G42n.
The surface treatment modules SM42a and SM42b may have the same configuration as the surface treatment module SM41, except that each of the surface treatment modules SM42a and SM42b accommodates one substrate W1 therein and performs a process on the substrate W1.
The SAM deposition modules SDM42a and SDM42b may have the same configuration as the SAM deposition module SDM41, except that each of the SAM deposition modules SDM42a and SDM42b accommodates one substrate W1 therein and performs a process on the substrate W1.
The deposition modules DM42a and DM42b may have the same configuration as the deposition module DM41, except that each of the deposition modules DM42a and DM42b accommodates one substrate W1 and performs a process on the substrate W1.
The bonding module BM42 and the heat treatment module AM42 may have the same configurations as the bonding module BM41 and the heat treatment module AM41, respectively.
In the vacuum transfer chamber TM42a, a vacuum transfer robot vacuum-transfers the substrate W1 between the surface treatment module SM42a, the SAM deposition module SDM42a, the deposition module DM42a, the bonding module BM42, and the load lock chambers LL42a and LL42b. In the vacuum transfer chamber TM42b, a vacuum transfer robot vacuum-transfers the substrate W1 between the surface treatment module SM42b, the SAM deposition module SDM42b, the deposition module DM42b, the bonding module BM42, and the load lock chambers LL42c and LL42d.
The load lock chambers LL42a to LL42d may have the same configuration as the load lock chambers LL41a and LL41b.
The interior of the load lock chamber LL42e can be switched between an ambient atmosphere and a vacuum atmosphere. In the load lock chamber LL42e, the bonded body W2 is transferred to the outside of the substrate bonding system 4B.
A third configuration example of the substrate bonding system according to the fourth embodiment will be described with reference to
As illustrated in
The load lock chamber LL43a, the surface treatment module SM43, the SAM deposition module SDM43, the deposition module DM43, the bonding module BM43, the heat treatment module AM43, and the load lock chamber LL43b are arranged in a line in this order.
The interior of the load lock chamber LL43a can be switched between an ambient atmosphere and a vacuum atmosphere. Substrates W1 are transferred to the load lock chamber LL43a from outside of the substrate bonding system 4C.
The surface treatment module SM43 is coupled to the load lock chamber LL43a via a gate valve G43a. The substrates W1 are vacuum-transferred from the load lock chamber LL43a to the surface treatment module SM43. The surface treatment module SM43 may have the same configuration as the surface treatment module SM41.
The SAM deposition module SDM43 is coupled to the surface treatment module SM43 via a gate valve G43b. The substrates W1 are vacuum-transferred from the surface treatment module SM43 to the SAM deposition module SDM43. The SAM deposition module SDM43 may have the same configuration as the SAM deposition module SDM41.
The deposition module DM43 is coupled to the SAM deposition module SDM43 via a gate valve G43c. The substrates W1 are vacuum-transferred from the SAM deposition module SDM43 to the deposition module DM43. The deposition module DM43 may have the same configuration as the deposition module DM41.
The bonding module BM43 is coupled to the deposition module DM43 via a gate valve G43d. The substrates W1 are vacuum-transferred from the deposition module DM43 to the bonding module BM43. The bonding module BM43 may have the same configuration as the bonding module BM41.
The heat treatment module AM43 is coupled to the bonding module BM43 via a gate valve G43e. A bonded body W2 is vacuum-transferred from the bonding module BM43 to the heat treatment module AM43. The heat treatment module AM43 may have the same configuration as the heat treatment module AM41.
The load lock chamber LL43b is coupled to the heat treatment module AM43 via a gate valve G43f. The bonded body W2 is vacuum-transferred from the heat treatment module AM43 to the load lock chamber LL43b. The interior of the load lock chamber LL43b can be switched between an ambient atmosphere and a vacuum atmosphere. In the load lock chamber LL43b, the bonded body W2 that is heat-treated in the heat treatment module AM43 is transferred to the outside of the substrate bonding system 4C.
A fourth configuration example of the substrate bonding system according to the fourth embodiment will be described with reference to
As illustrated in
The load lock chamber LL44a, the surface treatment module SM44a, the SAM deposition module SDM44a, and the deposition module DM44a are arranged in a line in this order, and the deposition module DM44a is coupled to the bonding module BM44. The load lock chamber LL44b, the surface treatment module SM44b, the SAM deposition module SDM44b, and the deposition module DM44b are arranged in a line in this order, and the deposition module DM44b is coupled to the bonding module BM44. The load lock chamber LL44a, the surface treatment module SM44a, the SAM deposition module SDM44a, and the deposition module DM44a are arranged in parallel with the load lock chamber LL44b, the surface treatment module SM44b, the SAM deposition module SDM44b, and the deposition module DM44b.
The interior of each of the load lock chambers LL44a and LL44b can be switched between an ambient atmosphere and a vacuum atmosphere. A substrate W1 is transferred to each of the load lock chambers LL44a and LL44b from outside of the substrate bonding system 4D.
The surface treatment modules SM44a and SM44b are coupled to the load lock chambers LL44a and LL44b via gate valves G44a and G44b, respectively. Substrates W1 are vacuum-transferred from the load lock chambers LL44a and LL44b to the surface treatment modules SM44a and SM44b, respectively. The surface treatment modules SM44a and SM44b may have the same configuration as the surface treatment modules SM42a and SM42b.
The SAM deposition modules SDM44a and SDM44b are coupled to the surface treatment modules SM44a and SM44b via gate valves G44c and G44d, respectively. The substrates W1 are vacuum-transferred from the surface treatment modules SM44a and SM44b to the SAM deposition modules SDM44a and SDM44b, respectively. The SAM deposition modules SDM44a and SDM44b may have the same configuration as the SAM deposition modules SDM42a and SDM42b.
The deposition modules DM44a and DM44b are coupled to the SAM deposition modules SDM44a and SDM44b via gate valves G44e and G44f, respectively. The substrates W1 are vacuum-transferred from the SAM deposition modules SDM44a and SDM44b to the deposition modules DM44a and DM44b, respectively. The deposition modules DM44a and DM44b may have the same configuration as the deposition modules DM42a and DM42b.
The bonding module BM44 is coupled to the deposition modules DM44a and DM44b via respective gate valves G44g and G44h. The substrate W1 is vacuum-transferred from each of the deposition modules DM44a and DM44b to the bonding module BM44. The bonding module BM44 may have the same configuration as the bonding module BM42.
The heat treatment module AM44 is coupled to the bonding module BM44 via a gate valve G44i. A bonded body W2 is vacuum-transferred from the bonding module BM44 to the heat treatment module AM44. The heat treatment module AM44 may have the same configuration as the heat treatment module AM42.
The load lock chamber LL44c is coupled to the heat treatment module AM44 via a gate valve G44j. The bonded body W2 is vacuum-transferred from the heat treatment module AM44 to the load lock chamber LL44c. The load lock chamber LL44c may have the same configuration as the load lock chamber LL42e.
(Method for Substrate Bonding)
As an example of the method for substrate bonding according to the fourth embodiment, a case where substrates are bonded by the substrate bonding system 4A illustrated in
Each substrate 40 is first prepared. In the present embodiment, as illustrated in
Subsequently, the interior of each of the load lock chambers LL41a and LL41b is switched to the ambient atmosphere. Then, the prepared substrate 40 is transferred, for example, to each of the load lock chambers LL41a and LL41b. Subsequently, the interior of each of the load lock chambers LL41a and LL41b in which the substrate 40 is accommodated is switched from the ambient atmosphere to the vacuum atmosphere. Subsequently, the gate valves G41f, G41g, and G41a are opened, the substrate 40 within each of the load lock chambers LL41a and LL41b is transferred to the surface treatment module SM41 through the vacuum transfer robot in the vacuum transfer chamber TM41, and then the gate valves G41f, G41g, and G41a are closed.
Subsequently, the plasma processing is performed on the surface of each substrate 40. With this approach, the upper surface of the conductive layer 41 and the upper surface of the insulating layer 42 are cleaned. In the present embodiment, as illustrated in
Subsequently, the gate valves G41a and G41b are opened, substrates 40 that are processed within the surface treatment module SM41 are transferred to the SAM deposition module SDM41 through the vacuum transfer robot in the vacuum transfer chamber TM41, and then the gate valves G41a and G41b are closed.
Subsequently, the deposition process is performed on each substrate 40 on which plasma processing is performed in the surface treatment module SM41 to selectively deposit a SAM 43 on the cleaned surface of the insulating layer 42. In the present embodiment, as illustrated in
Subsequently, the gate valves G41b and G41c are opened, the substrates 40 that are processed within the SAM deposition module SDM41 are transferred to the deposition module DM41 by the vacuum transfer robot in the vacuum transfer chamber TM11, and then the gate valves G41b and G41c are closed.
Subsequently, the deposition process is performed on each substrate 40 on which the SAM 43 is formed in the SAM deposition module SDM41, thereby selectively depositing a metal film 44 on the cleaned surface of the conductive layer 41. In the present embodiment, as illustrated in
Subsequently, the gate valves G41c and G41d are opened, substrates 40 that are processed within the deposition module DM41 are transferred to the bonding module BM41 through the vacuum transfer robot in the vacuum transfer chamber TM41, and then the gate valves G41c and G41d are closed.
Subsequently, the substrates 40 on which the deposition process is performed in the deposition module DM41 are bonded to form a bonded body 40X. In the present embodiment, as illustrated in
Subsequently, the gate valves G41d and G41e are opened, the bonded body 40X that is obtained within the bonding module BM41 is transferred to the heat treatment module AM41 through the vacuum transfer robot in the vacuum transfer chamber TM41, and then the gate valves G41d and G41e are closed.
Subsequently, the bonded body 40X that is formed in the bonding module BM41 is heat-treated. In the present embodiment, as illustrated in
Subsequently, the gate valves G41e and G41g are opened, the bonded body 40X heat-treated within the heat treatment module AM41 is transferred, for example, to the load-lock chamber LL41b through the vacuum transfer robot in the vacuum transfer chamber TM41, and then the gate valves G41e and G41g are closed. The load lock chamber LL41a may be used instead of the load lock chamber LL41b.
Subsequently, the interior of the load lock chamber LL41b is switched from the vacuum atmosphere to the ambient atmosphere, and then the bonded body 40X is transferred from the interior of the load lock chamber LL41a to the outside of the substrate bonding system 2A.
According to the fourth embodiment described above, the upper surface of the conductive layer 41 and the upper surface of the insulating layer 42 are cleaned by performing plasma processing on the surface of each substrate 40. Then, the metal film 44 is selectively deposited on the cleaned surface of the conductive layer 41 to control the surface shape. Then, two substrates 40 are bonded to form the bonded body 40X by performing hybrid bonding in which conductive layers 41 (metal films 44) are bonded together with insulating layers 42 in a state where given surface shapes are controlled. With this approach, the contact area between the conductive layers 41 can be increased. As a result, contact resistance is reduced, and bonding strength is improved. That is, the conductive layers 41 can be bonded with high reliability.
According to the fourth embodiment, the plasma processing in the surface treatment module, the deposition process in the SAM deposition module, the deposition process in the deposition module, and the bonding process in the bonding module are continuously performed in this order without exposing substrates 40 to the atmosphere. With this approach, contamination of each substrate 40, and oxidation of the surface of the conductive layer 41 and the like, during transfer between modules can be reduced. As a result, generation of fine defects (voids) caused by a contaminant or an oxide film at the interface surface of the bonded body 40X is reduced, and thus bonding strength is improved.
Also, according to the fourth embodiment, the bonded body 40X is transferred from the bonding module to the heat treatment module without being exposed to the atmosphere, and is heat-treated after the bonding process. With this approach, productivity is improved and bonding strength is improved, in comparison to a case where the bonded body 40X is heat-treated outside the substrate bonding system.
It should be understood that the embodiments disclosed herein are illustrative in all respects, and are not restrictive. Omissions, substitutions, and changes in the various forms of the above embodiments may be made without departing from the scope and spirit of the appended claims.
The above embodiments are described using a case where, when one or more substrates are transferred between various processing modules, the substrates are transferred to be in the vacuum atmosphere. However, the present disclosure is not limited to the manner described above. For example, when each substrate is transferred between various processing modules, the substrate may be transferred to be in an inert gas atmosphere, or the atmosphere in which a dew point is controlled.
Although the embodiments are described using the case where various processing modules are configured to accommodate one or two substrates and perform a process on the substrates, the present disclosure is not limited thereto. For example, each processing module may be configured to accommodate and process three or more substrates. For example, when each processing module accommodates and processes a plurality of substrates, processing modules can simultaneously process substrates W1 such that the substrates W1 are horizontally arranged and vertically arranged in multiple stages, as illustrated in
Although the first embodiment is described using the case where the insulating film 13 deposited on the exposed surface of the insulating layer 12 includes SiO2, the present disclosure is not limited thereto. Examples of a combination (insulating film 13/insulating layer 12) of the insulating layer 12 and the insulating film 13 include Al2O3/SiO2, SiOF/SiOC, ZrO2/SiO2, TiO2/SiO2, and TiN/SiO2.
In the second embodiment, examples of the SAM 23 that is deposited on the exposed surface of the conductive layer 21 include alkanethiols [R—SH], amines [R—NH], phosphonic acids [R—PO(OH)2], carboxylic acids [R—COOH], and alcohols [R—OH].
Although the third embodiment is described using the case where the metal film 33 formed on the exposed surface of the conductive layer 31 includes Pt, the present disclosure is not limited thereto. Examples of a combination (metal film 33/conductive layer 31) of the conductive layer 31 and the metal film 33 include Ni/Cu, Au/Cu, Pd/Cu, and Mn/Cu.
In the fourth embodiment, in a case where the insulating layer 42 includes an oxide film, examples of the SAM 43 formed on the exposed surface of the insulating layer 42 include alkyl silane [R—SiH3], alkyl trichlorosilane [R—SiCl3], and silane coupling agents [R—Si(OR)3], In addition, in a case where the insulating layer 42 includes a nitride film, for example, alkene [R—CH═CH2], or alkyl bromides may be used.
The present international application claims priority to Japanese Patent Application No. 2020-217832, filed Dec. 25, 2020, the contents of which are incorporated herein by reference in their entirety.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2020-217832 | Dec 2020 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2021/045796 | 12/13/2021 | WO |
