Claims
- 1. A substrate for receiving a circuit configuration of electronic components, comprising:
a substantially planar carrier substrate defining a plane and having a surface; a contact substrate formed at least partly of surface regions disposed on said surface of said carrier substrate and adapted to be connected to electronic components of the circuit configuration; said contact substrate including a contiguous contact substrate region; said contact substrate region having a first part forming a surface region disposed on and mechanically connected to said carrier substrate; said contact substrate region having a second part projecting out of said plane of said carrier substrate; and said first part and said second part of said contact substrate region forming at least a part of a fixing region adapted to receive a contact element for conducting electrical current and for electrically and mechanically connecting to the contact element.
- 2. The substrate according to claim 1, wherein said carrier substrate is a ceramic carrier substrate.
- 3. The substrate according to claim 1, wherein said contact substrate is a metallic substrate.
- 4. The substrate according to claim 1, wherein said fixing region is disposed in an edge region of the substrate.
- 5. The substrate according to claim 1, wherein said fixing region forms an edge region of the substrate.
- 6. The substrate according to claim 1, which comprises an edge region oriented out of said plane of the substrate, said edge region forming at least a part of said fixing region.
- 7. The substrate according to claim 1, which comprises an edge region at least partly bent out of said plane of the substrate, said edge region forming at least a part of said fixing region.
- 8. The substrate according to claim 1, wherein said surface of said carrier substrate is a first surface, and wherein a heat sink is disposed on a second surface opposite said first surface.
- 9. The substrate according to claim 8, wherein said heat sink is a metallic heat dissipation layer.
- 10. The substrate according to claim 1, wherein the substrate is a DCB substrate.
- 11. The substrate according to claim 1, which further comprises at least one contact element electrically and mechanically connected to said contact substrate through said fixing region and configured to conduct electrical current, said contact element having a contact projecting out of said plane defined by said carrier substrate.
- 12. The substrate according to claim 11, which comprises a soldering connection in each case electrically and mechanically connecting said contact element to each of said first part and said second part of said contact substrate region.
- 13. The substrate according to claim 11, which comprises a welding connection in each case electrically and mechanically connecting said contact element to each of said first part and said second part of said contact substrate region.
- 14. The substrate according to claim 1 configured for contacting and supporting a power semiconductor module thereon.
- 15. A method for producing the substrate according to claim 1, the method which comprises:
providing a carrier substrate defining a plane, and disposing a contact substrate thereon; forming a recess in the carrier substrate at a predetermined bending location thereof substantially in a contiguous portion of the contact substrate; bending the contiguous portion along the bending location defined by the recess to form a bending region projecting out of the plane of the carrier substrate and forming at least a part of a fixing region, to thereby produce the substrate according to claim 1.
- 16. The method according to claim 15, which comprises producing the substrate in a DCB process.
- 17. The method according to claim 15, which further comprises electrically and mechanically connecting at least one contact element to the contact substrate via the fixing region, the contact element having a contact projecting out of the plane defined by the carrier substrate and being configured to conduct electrical current.
- 18. The method according to claim 17, which comprises soldering or welding the contact element to each of the first part and the second part of the contact substrate region.
- 19. The method according to claim 15, which comprises configuring the carrier substrate and the contact substrate for connection to a power semiconductor module.
Priority Claims (1)
Number |
Date |
Country |
Kind |
100 26 743.2 |
May 2000 |
DE |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of copending International Application No. PCT/EP01/05674, filed Apr. 17, 2001, which designated the United States and which was not published in English.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/EP01/05674 |
May 2001 |
US |
Child |
10308049 |
Dec 2002 |
US |