SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM STORING PROGRAM FOR IMPLEMENTING THE METHOD

Abstract

A substrate processing apparatus that enables an oxide layer and an organic layer to be removed efficiently. A substrate formed at its surface with an organic layer covered with the oxide layer is housed in a chemical reaction processing apparatus of the substrate processing apparatus, in which the oxide layer is subjected to chemical reaction with gas molecules, and thus a product is produced on the substrate surface. The substrate is heated in a chamber of a heat treatment apparatus of the substrate processing apparatus, whereby the product is vaporized and the organic layer is exposed. Microwaves are then introduced into the chamber into which oxygen gas is supplied, whereby there are produced oxygen radicals that decompose and remove the organic layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view schematically showing the construction of a substrate processing apparatus according to an embodiment of the present invention;

FIGS. 2A and 2B are sectional views of a second processing unit appearing in FIG. 1; specifically:

FIG. 2A is a sectional view taken along line II-II in FIG. 1; and

FIG. 2B is an enlarged view of a portion A shown in FIG. 2A;

FIG. 3 is a sectional view of a third processing unit appearing in FIG. 1;

FIG. 4 is a plan view schematically showing the construction of an oxygen gas supply ring appearing in FIG. 3;

FIG. 5 is a plan view schematically showing the construction of a slot electrode appearing in FIG. 3;

FIGS. 6A, 6B, and 6C are plan views showing variations of the slot electrode shown in FIG. 5; specifically:

FIG. 6A is a view showing a first variation;

FIG. 6B is a view showing a second variation; and

FIG. 6C is a view showing a third variation;

FIG. 7 is a perspective view schematically showing the construction of a second process ship appearing in FIG. 1;

FIG. 8 is a diagram schematically showing the construction of a unit-driving dry air supply system for a second load lock unit appearing in FIG. 7;

FIG. 9 is a diagram schematically showing the construction of a system controller for the substrate processing apparatus shown in FIG. 1;

FIG. 10 is a flowchart of a deposit film removal process as a substrate processing method according to the above embodiment;

FIG. 11 is a plan view schematically showing the construction of a first variation of the substrate processing apparatus according to the above embodiment;

FIG. 12 is a plan view schematically showing the construction of a second variation of the substrate processing apparatus according to the above embodiment; and

FIG. 13 is a sectional view showing a deposit film comprised of an SiOBr layer, a CF-type deposit layer, and an SiOBr layer.

Claims

1. A substrate processing apparatus that carries out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the substrate processing apparatus comprising: a chemical reaction processing apparatus that subjects the oxide layer to chemical reaction with gas molecules so as to produce a product on the surface of the substrate; anda heat treatment apparatus that heats the substrate on the surface of which the product has been produced;wherein said heat treatment apparatus comprises a housing chamber in which the substrate is housed, an oxygen gas supply system that supplies oxygen gas into said housing chamber, and a microwave introducing apparatus that introduces microwaves into said housing chamber.

2. A substrate processing apparatus as claimed in claim 1, wherein said microwave introducing apparatus has a disk-shaped antenna disposed such as to face the substrate housed in said housing chamber, and an electromagnetic wave absorber disposed such as to surround a peripheral portion of said antenna.

3. A substrate processing apparatus as claimed in claim 1, wherein the organic layer is a layer made of CF-type deposit.

4. A substrate processing method for carrying out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the substrate processing method comprising: a chemical reaction processing step of subjecting the oxide layer to chemical reaction with gas molecules so as to produce a product on the surface of the substrate;a heat treatment step of heating the substrate on the surface of which the product has been produced;an oxygen gas supply step of supplying oxygen gas toward an upper portion of the substrate on which the heat treatment has been carried out; anda microwave introducing step of introducing microwaves toward the upper portion of the substrate onto which the oxygen gas has been supplied.

5. A computer-readable storage medium storing a program for causing a computer to implement a substrate processing method for carrying out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the program comprising: a chemical reaction processing module for subjecting the oxide layer to chemical reaction with gas molecules so as to produce a product on the surface of the substrate;a heat treatment module for heating the substrate on the surface of which the product has been produced;an oxygen gas supply module for supplying oxygen gas toward an upper portion of the substrate on which the heat treatment has been carried out; anda microwave introducing module for introducing microwaves toward the upper portion of the substrate onto which the oxygen gas has been supplied.