Techniques for combining CMP process tracking data with 3D printed CMP consumables

Abstract
Chemical mechanical polishing (CMP) apparatus and methods for manufacturing CMP apparatus are provided herein. CMP apparatus may include polishing pads, polishing head retaining rings, and polishing head membranes, among others, and the CMP apparatus may be manufactured via additive manufacturing processes, such as three dimensional (3D) printing processes. The CMP apparatus may include wireless communication apparatus components integrated therein. Methods of manufacturing CMP apparatus include 3D printing wireless communication apparatus into a polishing pad and printing a polishing pad with a recess configured to receive a preformed wireless communication apparatus.
Description
BACKGROUND
Field

Embodiments of the present disclosure generally relate to a chemical mechanical polishing (CMP) apparatus and methods of making and using the same. More specifically, embodiments described herein relate to techniques for collecting data in a CMP apparatus, such as collecting data relating to a CMP process and/or data relating to a component found in the CMP polishing apparatus.


Description of the Related Art

Chemical mechanical polishing (CMP) is a technique commonly used to planarize substrates during the fabrication of semiconductor devices. During a CMP process, a substrate being processed is mounted on a carrier head with the device surface positioned against a rotating polishing pad. The carrier head provides a controllable load to the substrate to push the device surface against the polishing pad. A polishing liquid, such as a slurry with abrasive particles, is typically supplied to the surface of the polishing pad. Polishing pads are consumable components that typically become worn after polishing a certain number of substrates. Accordingly, the pads, and other CMP consumable components, need to be replaced occasionally to maintain a consistent and suitable polishing performance.


Polishing pads are typically made by molding, casting or sintering polyurethane materials. In the case of molding, the polishing pads can be made one at a time, e.g., by injection molding. In the case of casting, the liquid precursor is cast and cured into a cake, which is subsequently sliced into individual pad pieces. The pad pieces can then be machined to a final thickness. Grooves can be machined into the polishing surface, or be formed as part of the injection molding process. These methods of manufacturing polishing pads are expensive and time consuming. Moreover, polishing pads manufactured by these methods often yield non-uniform polishing results. For example, during CMP, different areas on the substrate may be polished at different rates resulting in too much material removed (“overpolishing”) in some areas or too little material removed (“underpolishing”) in other areas.


In addition, polishing pads and other CMP apparatus manufactured by conventional techniques often lack devices and methods for performing various tracking, sensing, monitoring, and process metrology functions. Conventional CMP systems often rely on system level sensing techniques which typically do not provide enough data to adequately control the CMP processes required to planarize devices formed in advanced technology integrated circuit nodes.


Therefore, there is a need for CMP systems, polishing pads and other CMP apparatus that provide improved polishing performance and desirable process sensing capabilities. In addition, there is a need for methods of manufacturing such apparatus.


SUMMARY

In one embodiment, a polishing pad apparatus is provided. The apparatus includes a 3D printed polymeric body comprising one or more polishing features having an upper surface configured to contact a substrate. The 3D printed polymeric body includes a first region that comprises a first material and a second region that comprises a second material. An RFID tag may be integrally disposed within the 3D printed polymeric body and the RFID tag may be positioned a distance from the upper surface


In another embodiment, a chemical mechanical polishing system is provided. The system includes a platen having a supporting surface and a 3D printed polishing pad having an RFID tag disposed therein. The 3D printed polishing pad may be disposed over the supporting surface of the platen and an interrogator may also be coupled to the platen. The interrogator and the RFID tag are configured to communicate with one another using a wireless communication technique. A polishing head may also be positioned opposite the platen and the polishing head may be configured to urge a substrate against a polishing surface of the 3D printed polishing pad.


In yet another embodiment, a method of manufacturing a polishing pad is provided. The method includes depositing a 3D printed first portion of a polishing pad by distributing one or more first polymeric material from a first nozzle of a 3D print head. The one or more first polymeric material may be electrically non-conductive and a 3D printed RFID tag may be deposited by distributing one or more second polymeric materials from a second nozzle of a 3D print head on the 3D printed first portion of the polishing head. The one or more second polymeric materials may include at least one electrically conductive or semi-conductive polymeric materials. A 3D printed second portion of the polishing pad may be deposited over the 3D printed RFID tag and the 3D printed first portion by distributing the one or more first polymeric materials from the first nozzle of the 3D print head.


In yet another embodiment, a method of using a 3D printed polishing head is provided. The method includes sensing one or more processing parameters with an RFID tag disposed within a 3D printed polishing pad and receiving, via an interrogator, one or more signals from the RFID tag. The method also includes communicating the one or more signals to a controlled adapted to control the polishing process.


In yet another embodiment, a wireless communication method is provided. The method includes performing a substrate polishing process in a polishing system. The polishing system may include a platen, a polishing pad coupled to the platen, and a polishing head comprising one or more components removably coupled to the polishing head. An RFID tag may be coupled to the one or more components and one or more wireless communication signals may be received from the RFID via an interrogator fixably disposed in the platen. The one or more wireless communication signals may be analyze and the one or more components may be removed from the polishing head.


In yet another embodiment, a structure embodied in a machine readable medium used in a design process is provided. The structure includes a 3D printed polymeric body comprising one or more polishing features having an upper surface configured to contact a substrate. The 3D printed polymeric body includes one or more substantially non-electrically conductive first materials and a 3D printed RFID tag comprising one or more second materials may be integrally disposed within the 3D printed polymeric body. The one or more second materials may be conductive or semi-conductive.


In yet another embodiment, a non-transitory computer-readable medium is provided. The computer-readable medium may store instructions that, when executed by a processor, cause the computer system to implement a substrate polishing process, by performing the operations of causing initiation of a substrate polishing process and receiving signals corresponding to one or more processing parameters. The signals may be generated by a wireless communication apparatus disposed within a 3D printed polishing pad. The signals may be analyzed to determine processing conditions and at least one of the one or more processing parameters may be changed in response to the processing conditions.


In some embodiments, an RFID tag may be disposed within or coupled to a polishing pad and a reader may be disposed within a platen or polishing head. In another embodiment, an RFID tag may be disposed within or coupled to a retaining ring and a reader may be disposed within a platen. In another embodiment, an RFID tag may be disposed within or coupled to a membrane and a reader may be disposed within a platen. Various sensors may be coupled to the RFID tag to provide in-situ monitoring, sensing, and metrology functionality.





BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, may admit to other equally effective embodiments.



FIG. 1A illustrates a schematic sectional view of a polishing apparatus according to embodiments described herein.



FIG. 1B illustrates a more detailed cross-sectional view of a carrier head of the polishing apparatus of FIG. 1A according to embodiments described herein.



FIG. 2 is a schematic perspective sectional view of a polishing pad according to embodiments described herein.



FIG. 3 is a schematic cross-sectional view of a polishing pad according to embodiments described herein.



FIG. 4 is a schematic cross-sectional view of a polishing pad having one or more observation windows according to embodiments described herein.



FIG. 5 is a schematic cross-sectional view of a polishing pad including a supporting layer according to embodiments described herein.



FIG. 6 illustrates a partial, schematic, cross-sectional view of a polishing pad and a platen incorporating an RFID tag and read therein, respectively, according to embodiments described herein.



FIG. 7 illustrates an electrical component schematic diagram of an RFID tag according to embodiments described herein.



FIG. 8 illustrates a partial, cross-sectional view of a polishing head retaining ring and platen incorporating near field communication components according to embodiments described herein.



FIG. 9 illustrates a partial, cross-sectional view of a polishing head membrane and platen incorporating near field communication components according to embodiments described herein.



FIG. 10 illustrates a method of manufacturing a polishing pad with an RFID tag according to one embodiment described herein.



FIG. 11 illustrates a method of manufacturing a polishing pad with an RFID tag according to one embodiment described herein.



FIG. 12 is a schematic, sectional view of an apparatus for manufacturing polishing pads according to embodiments described herein.





To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.


DETAILED DESCRIPTION

Embodiments of the disclosure generally include CMP apparatus and methods for manufacturing and using the same. CMP apparatus may include polishing pads, polishing head retaining rings, and polishing head membranes, among others, and the CMP apparatus may be manufactured via additive manufacturing processes, such as three dimensional (3D) printing processes. The CMP apparatus may include wireless communication apparatus, such as radio frequency identification (RFID) or other components integrated therein. Methods of manufacturing CMP apparatus include 3D printing an RFID tag into or onto a polishing pad and printing a polishing pad with a recess configured to receive an RFID tag.



FIG. 1A illustrates a schematic sectional view of a polishing apparatus 100 according to embodiments described herein. The polishing apparatus 100 may be utilized in a polishing system to perform substrate polishing. The polishing station 100 includes a platen 102 which may rotate about a central axis 104. The platen 102 is generally circular in shape, but it is contemplated that other shapes may be advantageously utilized. A polishing pad 106 may be coupled to the platen 102. Although illustrated as a single polishing pad 106 coupled to the platen 102, it is contemplated that multiple polishing pads may also be coupled to the platen depending upon desired polishing characteristics. The polishing pad 106 may include a mono-material layer body or a composite material body according to embodiments of the present disclosure. The polishing pad 106 includes a polishing surface 112 configured to contact and process substrates by removing at least some material from the substrate. The platen 102 supports the polishing pad 106 and rotates the polishing pad 106 during polishing.


A carrier head 108 may secure and hold a substrate 110 being processed against the polishing surface 112 of the polishing pad 106. The carrier head 108 may rotate about a central axis 114 and/or move in a sweeping motion to generate relative motion between the substrate 110 and the polishing pad 106. During polishing, a polishing fluid 116, such as an abrasive slurry, may be supplied to the polishing surface 112 by a delivery arm 118. The polishing liquid 116 may contain abrasive particles, a pH adjuster, and/or chemically active components to enable chemical mechanical polishing of the substrate 110.


One or more wireless communication apparatus 600 may be disposed within or otherwise coupled to the polishing pad 106. One or more interrogators 601 may be disposed within or otherwise coupled to the platen 102. The wireless communication apparatus 600 and the interrogator 601 are configured to communicate via a communication link 607. In one embodiment, the communication link 607 may be a wireless communication protocol. In another embodiment, the communication link 607 may be a wired connection. The interrogator is communicatively coupled to a controller 612 which may receive input from the wireless communication apparatus 600 via the interrogator 601. The wireless communication apparatus 600, the interrogator 601, and the controller are discussed in greater detail with reference to FIG. 6.


Generally, the wireless communication apparatus 600 is configured to sense various processing parameters and system components. The wireless communication apparatus 600 may be positioned at various locations within the polishing pad 106 and may provide for improved data collection over the entire polishing surface 112, which may be analyzed by the controller 112 to improve the control of the polishing process. Data collected via the wireless communication apparatus 600 may be utilized for real time process control and/or to ensure utilization of compatible system components, such as a suitable retaining ring 120 or flexible membrane (not shown), among other system components. In these embodiments, the other suitable system components may also employ wireless communication apparatus to communicate with the interrogator 601.



FIG. 1B illustrates a more detailed cross-sectional view of the carrier head 108 of the polishing apparatus 100 of FIG. 1A according to embodiments described herein. As described above, the carrier head 108 is configured to hold the substrate 110 during polishing or other processing. The carrier head 108 may hold the substrate 110 against the polishing pad 106 supported by the rotatable platen 102 and distribute a pressure across a back surface 136 of the substrate 110 toward the polishing pad 106.


The carrier heads 108 includes a base assembly 140 (which may be coupled directly to or indirectly to a rotatable drive shaft 130), a retaining ring 120, and a flexible membrane 132. The flexible membrane 132 extends below and is coupled with the base assembly 140 to provide multiple pressurizable chambers, including a non-circular inner chamber 122a and an adjacent outer chamber 122b. Passages 124a and 124b are formed through the base assembly 140 to fluidly couple the chambers 122a and 122b, respectively, to pressure regulators in the polishing apparatus 100. Although FIG. 1B illustrates two pressurizable chambers, the carrier head 108 may have any number of chambers, for example, three, four, five, or more chambers.


Although not shown, the carrier head 108 may include other elements, such as a housing that is securable to the drive shaft 130 and from which the base assembly 140 is movably suspended, a gimbal mechanism (which may be considered part of the base assembly 140) that allows the base assembly 140 to pivot, a loading chamber between the base assembly 140 and the housing, one or more support structures inside the chambers 122a and 122b, or one or more internal membranes that contact the inner surface of the flexible membrane 132 to apply supplemental pressure to the substrate 110.


The flexible membrane 132 may be hydrophobic, durable, and chemically inert in relation to the polishing process. The flexible membrane 132 may include a mounting portion 138 configured to contact the back surface 136 of the substrate 110. One or more flaps 134 may couple the mounting portion 138 to the base assembly 140 via clamp rings 126, 128. The one or more flaps 134 may divide the chambers 122a, 122b to provide for areal pressure control across the substrate 110.


The retaining ring 120 may be coupled to the base assembly 140 radially outward of the flexible membrane 132. Generally, the retaining ring 120 is configured to prevent excessive movement of the substrate 110 relative to the flexible membrane 132 and to prevent lateral movement of the substrate 110. The retaining ring may be made from materials which are inert to chemical compositions utilized in a polishing process. It is contemplated that the retaining ring 120 may be made from suitable materials, such as polymers, ceramics, and metals, depending upon the desired applications.


Advanced Pad Configurations and Design Examples


FIG. 2 is a schematic perspective sectional view of a polishing pad 200 according to embodiments described herein. The polishing pad 200 may be used in polishing stations, such as the polishing station 100, for polishing semiconductor substrates by chemical mechanical polishing. It is contemplated that other industries may utilize other types of substrates which may be advantageously processed utilizing polishing pads according to the embodiments described herein. For example, optical industries may polish various lenses or mirrors utilizing pads and other associated apparatus described herein.


In the illustrated embodiment, the polishing pad 200 includes a composite pad body 202. Although not illustrated, it is contemplated that the polishing pad body 202 may be formed from a single material, instead of multiple materials. The composite pad body 202 includes one or more first features 204 and one or more second features 206. The first features 204 and the second features 206 are discrete features that are joined together at their boundaries to form the composite pad body 202. In one embodiment, the first features 204 may have a hardness of about 40 Shore D scale to about 90 Shore D scale. The second features 206 may have a hardness value between about 26 Shore A scale to about 95 Shore A scale.


The composite pad body 202 may be formed by additive manufacturing (e.g., 3D printing) or other suitable techniques, such as casting or molding techniques. The composite pad body 202 may include a plurality of layers, each including regions of the second features 206 and/or regions of first features 204 according to the design of the composite pad body 202. In one embodiment, each region, which includes first features 204 and/or second features 206, may be deposited by a 3D printer in a simultaneous or sequential printing process. The plurality of layers may then be cured, for example by UV light or by a heat source, to solidify and achieve a target hardness. After deposition and curing, a unitary composite pad body 202 is formed including the first features 204 and the second features 206 that are coupled or joined together. A curing process may or may not be necessary in embodiments relating to non-composite polishing pads.


Materials having different mechanical properties may be selected for the second features 206 and the first features 204 to achieve a target polishing process. The dynamic mechanical properties of the second features 206 and the first features 204 may be achieved by selecting different materials and/or choosing different curing processes used during the feature forming process. In one embodiment, the second features 206 may have a lower hardness value and a lower value of elastic modulus, while the first features 204 may have a higher hardness value and a higher value of elastic modulus. In another embodiment, the dynamic mechanical properties, such as elastic modulus (or storage modulus) and loss modulus, may be adjusted or controlled within each feature and/or by the physical layout, pattern or combination of second features 206 and first features 204 within or across the polishing surface of the polishing pad 200.


The first features 204 may be formed from one or more polymer materials. The material(s) used to form the first features 204 may include a single polymer material or a mixture of two or more polymers to achieve target mechanical, surface, chemical, or thermal properties. In one embodiment, the first features 204 may be formed from one or more thermoplastic polymers. The first features 204 may be formed from thermoplastic polymers, such as polyurethane, polypropylene, polystyrene, polyacrylonitrile, polymethyle methacrylate, polychlorotrifluoroethylene, polytetrafluoroethylene, polyoxymethylene, polycarbonate, polyimide, polyetheretherketone, polyphenylene sulfide, polyether sulfone, acrylonitrile butadiene styrene (ABS), polyetherimide, polyamides, melamines, polyesters, polysulfones, polyvinyl acetates, fluorinated hydrocarbons, and the like, and acrylates, copolymers, grafts, and mixtures thereof. In one embodiment, the first features 204 may be formed from acrylates. For example, the first features 204 may be polyurethane acrylate, polyether acrylate, or polyester acrylate. In another embodiment, the first features 204 may include one or more thermosetting polymers, such as epoxies, phenolics, amines, polyesters, urethanes, silicon, and acrylates, mixtures, copolymers, and grafts thereof.


In one embodiment, the first features 204 may be formed from a simulating plastic 3D printing material. In another embodiment, the first features 204 may be formed from a polymeric material, which may be a single polymer or a combination of polymers, or a thermoplastic material, such as a thermoplastic polymer. In one embodiment, abrasive particles may be embedded in the first features 204 to enhance the polishing process. The material comprising the abrasive particles may be a metal oxide, such as ceria, alumina, silica, or a combination thereof, a polymer, an inter-metallic or ceramic.


The material(s) used to form the second features 206 may include one or more polymer materials. The second features 206 may be formed from a single polymer material or a mixture of two more polymers to achieve target properties. In one embodiment, the second features 206 may be formed from one or more thermoplastic polymers. For example, the second features 206 may be formed from thermoplastic polymers, such as polyurethane, polypropylene, polystyrene, polyacrylonitrile, polymethyl methacrylate, polychlorotrifluoroethylene, polytetrafluoroethylene, polyoxymethylene, polycarbonate, polyimide, polyetheretherketone, polyphenylene sulfide, polyether sulfone, acrylonitrile butadiene styrene (ABS), polyetherimide, polyamides, melamines, polyesters, polysulfones, polyvinyl acetates, fluorinated hydrocarbons, and the like, and acrylates, copolymers, grafts, and mixtures thereof. In one embodiment, the second features 206 may be formed from acrylates. For example, the second features 206 may be polyurethane acrylate, polyether acrylate, or polyester acrylate. In another embodiment, the second features 206 may be formed from thermoplastic elastomers. In one embodiment, the second features 206 may be formed from a rubber-like 3D printing material.


In some embodiments, the first features 204 are harder and more rigid relative to the second features 206, while the second features 206 are softer and more flexible relative to the first features 204. Materials and patterns of the first features 204 and the second features 206 may be selected to achieve a “tuned” bulk material of the polishing pad 200. The polishing pad 200 formed with this “tuned” bulk material has various advantages, such as improved polishing results, reduced cost of manufacturing, elongated pad life. In one embodiment, the “tuned” bulk material or the polishing pad as a whole may have a hardness between about 65 shore A to about 75 shore D. Tensile strength of the polishing pad may be between 5 MPa to about 75 MPa. The polishing pad may have about 5% to about 350% elongation to break. The polishing pad may have shear strength above about 10 MPa. The polishing pad may have storage modulus between about 5 MPa to about 2000 MPa. The polishing pad may have a stable storage modulus over a temperature range between about 25° C. to about 90° C. such that a storage modulus ratio at E30/E90 falls within the range between about 6 to about 30, wherein E30 is the storage modulus at 30° C. and E90 is the storage modulus at 90° C.


In one embodiment, the materials of the first features 204 and second features 206 are chemically resistant to attack from the polishing slurry. In another embodiment, the materials of the first features 204 and second features 206 are hydrophilic.


Generally, the first features 204 and the second features 206 may be alternating concentric rings alternately arranged to form a circular composite pad body 202. In other embodiments, the first features 206 and the second features 106 may be discrete posts extending from the body 202 in an alternating or other suitable arrangement. It is contemplated that various other polishing pad surface designs may also be utilized advantageously with the embodiments described herein. In one embodiment, a height 210 of the first features 204 is higher than a height 212 of the second features 206 so that upper surfaces 208 of the first features 204 protrude from the second features 206. Grooves 218 or channels are formed between the first features 204 and the second features 206. During polishing, the upper surfaces 208 of the first features 204 form a polishing surface that contacts the substrate, while the grooves 218 retains the polishing fluid. In one embodiment, the first features 204 are formed with a thickness greater than a thickness of the second features 206 in a direction normal to a plane parallel to the composite pad body 202 so that the grooves 218 and/or channels are formed on the top surface of the composite pad body 202.


In one embodiment, a width 214 of the first features 204 may be between about 250 microns to about 2 millimeters. The pitch 216 between the first features 204 may be between about 0.5 millimeters to about 5 millimeters. Each first feature 204 may have a width 214 within a range between about 250 microns to about 2 millimeters. The width 214 and/or the pitch 216 may vary across a radius of the polishing pad 200 to zones of varied hardness.


Compared with traditional polishing pads, the composite polishing pad 200 of the present disclosure has several advantages. Traditional polishing pads generally include a polishing layer with a textured polishing surface and/or an abrasive materials supported by a subpad formed from a soft material, such as a foam, to obtain target hardness or elastic modulus for polishing substrates. By selecting materials having various mechanical properties, such as Poisson's ratio, elastic modulus and loss modulus, and adjusting the dimensions and spacing of the features or varying arrangement of the different features, desirable hardness, dynamic properties and/or mechanical properties may be achieved in the composite pad body 202 without using a subpad. Therefore, the polishing pad 200 reduces cost of ownership by eliminating subpads. Additionally, hardness and abrasiveness of the polishing pad 200 may be tuned by mixing features with different hardness and abrasiveness, therefore, improving polishing performance.


Composite polishing pads according to the present disclosure may have differing mechanical properties, such as elastic modulus (Young's modulus) and loss modulus, across surface features, such as the first features 204, and base materials, such as the second features 206, by adjusting the pattern variation and/or feature size variation. Mechanical properties across the polishing pads may be symmetric or non-symmetric, uniform or non-uniform to achieve target properties. The pattern of the surface features may be radial, concentric, rectangular, or random according to achieve target property, such as a predetermined mechanical properties, such as elastic modulus and loss modulus, across the polishing pad. In some embodiments, the first features and the second features may be interlocked to improve the strength of the composite polishing pad and improve physical integrity of the composite polishing pad. Interlocking of the first features and second features may increase sheer strength, compression strength and/or tensile strength of the polishing pad.


Additive manufacturing processes, such as 3D printing, may provide advantages when incorporating various sensing apparatus in the polishing pad. Sensing apparatus, such as RFID tags and metrological sensors, will be discussed in greater detail below with regard to FIGS. 6 and 7.



FIG. 3 is a schematic cross-sectional view of a polishing pad 300 according to embodiments described herein. The polishing pad 300 includes a base layer 302 that is soft and elastic similar to an embodiment of the second features 206 of the polishing pad 200. Similar to the second features 206, the base layer 302 may be formed from one or more elastomeric polymers. The polishing pad 300 includes a plurality of surface features 306 extending from the base layer 302. Outer surfaces 308 of the surface features 306 may be formed from a soft material or a composition of soft materials. In one embodiment, the outer surface 308 of the surface features 306 may be formed from the same material or the same composition of materials as the base layer 302. The surface features 306 may also include a first feature 304 embedded therein. The first features 304 may be formed from a material or a composition of materials that is harder than the surface features 306. The first features 304 may be formed from materials similar to the material or materials of the first features 204 of the polishing pad 200. The embedded first features 304 alter the effective mechanical properties of the surface features 306, and thus can provide a pad that has desirable mechanical and/or dynamic properties for polishing. The soft polymeric layer of the outer surface 308 can be used to reduce defects and improve planarization on the substrate being polished. Alternatively, a soft polymer material may be printed on surfaces of other harder material containing polishing pads of the present disclosure to provide similar benefits.


The polishing pad 300 may also include the wireless communication apparatus 600 disposed therein. In addition to the mechanical properties provided by the first features 304, the first features 304 may also be coupled to the wireless communication apparatus 600, so that some form of electrical data (e.g., capacitance, resistances, etc.) can be collected by components in the wireless communication apparatus 600. The first features 304 may be coupled to the wireless communication apparatus 600 via a wire 310 or the like, which may be printed during a polishing pad manufacturing process. In one embodiment, the wire 310 may be printed from one or more conductive materials compatible with the materials utilized to print the polishing pad 300.


In one embodiment, the first features 304 may include conductive elements that function as a wear indicator. In some embodiments, during polishing, the surface features 306 may eventually wear away and expose the first features 304. Various signals (acoustic, electrical, pressure, etc.) received by the wireless communication apparatus 600 may be initiated when the surface features 306 are removed and the first features 304 are exposed. The change and/or generation of a signal in response to exposure of the first features 304 may cause the wireless communication apparatus 600 to communicate with the interrogator 601 (not shown) and provide processing data to the controller 612. Thus, operators of the processing system can receive real time data regarding usage and polishing parameters. In one embodiment, exposure of the first features 304 may indicate polishing pad wear and the polishing pad 300 may be replaced to ensure adequate polishing of substrates.



FIG. 4 is a schematic cross-sectional view of a polishing pad 400 having one or more observation windows 410 formed therein according to embodiments described herein. The polishing pad 400 may have a pad body 402 similar to the polishing pad 200. The pad body 402 may include one or more second features 406 and a plurality of first features 404 extending from the second features 406 for polishing. The second features 406 and the first features 404 may be formed from materials similar to those for the second features 206 and first features 204 of the polishing pad 200. The first features 404 may be arranged in any suitable patterns according to the present disclosure.


The polishing pad 400 also contains one or more observation windows 410 that may be formed from a transparent material to allow observation of the substrate during polishing. The observation windows 410 may be formed through, and/or abut portions of, the second feature 406 or the first features 404. The observation window 410 may be formed while the first features 402 and second features 406 are being formed by the by use of the additive manufacturing processes. In some embodiments, the observation window 410 may be formed from a material that is substantially transparent, and thus is able to transmit light emitted from a laser and/or white light source for use in a CMP optical endpoint detection system. In one embodiment, the observation window 410 may be formed from a transparent 3D printing photopolymer. For example, the observation window 410 may be formed from polymethylmethacrylate (PMMA). In some embodiments, the observation window 410 is formed from a material that has a low refractive index that is to that of the polishing slurry and has a high optical clarity to reduce reflections from the air/window/water interfaces and improve transmission of the light through the observation window 410 to and from the substrate. The optical clarity is of the material is selected to provide at least about 25% (e.g., at least about 50%, at least about 80%, at least about 90%, at least about 95%) light transmission over the wavelength range of the light beam used by the end point detection system's optical detector. Typical optical end point detection wavelength ranges include the visible spectrum (e.g., from about 400 nm to about 800 nm), the ultraviolet (UV) spectrum (e.g., from about 300 nm to about 400 nm), and/or the infrared spectrum (e.g., from about 800 nm to about 1550 nm).



FIG. 5 is a schematic perspective sectional view of a polishing pad 500 including a backing layer 506. The polishing pad 500 includes a base material layer 504 and a plurality of surface features 502 protruding from the base material layer 504. The polishing pad 500 may be similar to the polishing pads 200, 300, 400 described above except having the backing layer 506 attached to the base material layer 504. The backing layer 506 may provide a desired compressibility to the polishing pad 500. The backing layer 506 may also be used to alter the overall mechanical properties of the polishing pad 500 to achieve a desired hardness and/or have desired dynamic material properties (e.g., elastic modulus and loss modulus). The backing layer 506 may have a hardness value of less than 80 Shore A scale.


In one embodiment, the backing layer 506 may be formed from an open-cell or a closed-cell foam, such as polyurethane or polysilicone with voids, so that when pressure is applied, the cells/voids collapse and the backing layer 506 compresses in a predictable manner. In another embodiment, the backing layer 506 may be formed from natural rubber, ethylene propylene diene monomer (EPDM) rubber, nitrile, or polychloroprene (neoprene), among others.


In one embodiment, the backing layer 506 may be formed by use of an additive manufacturing process, such as a 3D printing process. In this configuration the backing layer 506 may be formed from a single polymer material or a mixture of two more polymers to achieve desirable mechanical and dynamic material properties. In one configuration, the surface features 502 and base material layer 504 are formed directly on the backing layer 506. In one embodiment, the backing layer 506 may be formed from one or more thermoplastic polymers, and thus may include one or more of the materials described above in conjunction with the first feature 204 and/or second feature 206.


In certain embodiments, the wireless communication apparatus 600 may be disposed in or coupled to the polishing pad 500. In one embodiment, the wireless communication apparatus 600 may be disposed in the base material layer 504 or the surface features 502. In the illustrated embodiment, the wireless communication apparatus 600 may be disposed in the backing layer 506. Regardless of the position of the wireless communication apparatus 600, the wireless communication apparatus 600 may be sized to sense one or more processing parameters across multiple surface features 502. For example, two or more surface features 502 may be sensed simultaneously by the wireless communication apparatus 600. As a result, various processing parameters (temperature, pressure, conductivity, etc.) may be sensed across a larger area of the polishing surface rather than sensing a single surface feature 502. By sensing a larger area of the polishing surface, a regionally averaged signal may be detected by the wireless communication apparatus 600. In embodiments utilizing multiple wireless communication apparatus 600, a more globally averaged signal may be determined by combining data from the individual wireless communication apparatus 600.


Information Collection System Configuration Examples


FIG. 6 illustrates a partial, schematic, cross-sectional view of the polishing pad 200 and the platen 102 incorporating the wireless communication apparatus 600 and the interrogator 601 therein, respectively, according to embodiments described herein. The polishing pad 200 is intended to be representative of any polishing pad configured to incorporate integrated sensing or metrology apparatus therein. For example, the polishing pad may be printed, cast, or molded with the wireless communication apparatus 600 disposed therein. In one embodiment, the wireless communication apparatus 600 is configured to communicate wirelessly with the interrogator. Examples of wireless communication protocols include near field communication techniques, Bluetooth®, optical signal transmission techniques, acoustic signal transmission techniques, radio frequency communication techniques, and other suitable wireless communication techniques. Alternatively, the wireless communication apparatus 600 may be hardwired to the interrogator 601 to facilitate communication therebetween.


While a single wireless communication apparatus 600 and a single interrogator 601 are illustrated in FIG. 6, it is contemplated that multiple wireless communication apparatus 600 and interrogators 601 may be implemented in pads and platens, respectively (See FIG. 1). In addition, one or more wireless communication apparatus 600 may be sensed by a single interrogator 601. It is also contemplated that wireless communication apparatus 600 may be positioned within or on a surface of the pad 200 at various locations, such as a center location (i.e. at the origin or rotational axis coincident point of a circular pad), a middle location (i.e. ½ the radius from the origin of a circular pad), or an outer location (i.e. adjacent a circumference of a circular pad). Multiple NFC apparatus 600 may also be utilized in combination and various positions (i.e. center location and outer location or center, middle, and outer locations) may be utilized together. By utilizing multiple wireless communication apparatus 600 in concert with one another, a more comprehensive view of the processing environment will be created, due to the collection of the data at multiple locations across the pad 200. Generally, the wireless communication apparatus 600 is positioned relative to the pad 200 so that the path of the substrate 110, across the polishing surface of the polishing system 100 during processing, overlap during various points of the polishing process.


Similarly, the interrogator 601 may be positioned within the platen 102 at various locations, such as a center, a middle, and an outer location. The interrogator's location may be determined independently of the wireless communication apparatus 600 location or may be determined at least in part by the wireless communication apparatus location to facilitate communication between the wireless communication apparatus 600 and the interrogator 601.


The interrogator 601 disposed in the platen 102 generally includes a reader 608 and an antenna 610. The reader may include or be coupled to a power source, such as an RF power source, and may be configured to transmit, via the antenna 610, a signal to be received by the wireless communication apparatus 600. In one embodiment, the reader 608 may include, among other apparatus, an RF modulator and an interrogator controller configured to manage signal transmission and reception by the reader 608. In one embodiment, the RF modulator may be configured to generate and/or modulate an RF signal having a wavelength of about 13.56 MHz. In a passive tag embodiment, the interrogator 601 and the wireless communication apparatus 600 may be positioned in a spatial relationship having a distance of less than about twelve inches, for example, less than about two inches, such as less than about one inch. In an active tag embodiment, the spatial relationship between the interrogator 601 and the wireless communication apparatus 600 may be greater than the passive tag embodiments and may be depended upon the power available for signal transmission.


The wireless communication apparatus 600 generally includes a tag 602 and an antenna 606 that is coupled to or integrally manufactured in the tag 602. In certain embodiments, a sensor 604 may also be communicatively coupled to the tag 602. The tag 602 may be an active tag or a passive tag, depending upon the desired implementation. In an active tag embodiment, a power source, such as a battery, may be electrically coupled to the tag and provide suitable power to the tag so the tag can transmit a signal to an interrogator 601 via the communication link 607 formed between the devices. It is contemplated that an active tag may be implemented in embodiments where power is coupled to the tag. Additionally, an active tag may be utilized in embodiments where data transmitted by the tag is intended to be sensed by an interrogator 601 at a distance greater than may be obtained when using a passive tag. However, it is contemplated that an active tag may be utilized in near field communication embodiments where a passive tag would find suitable utilization.


In a passive tag embodiment, the tag may be configured to receive a signal, such as a radio frequency signal from the interrogator 601, and utilize the electromagnetic energy of the received signal to transmit (or reflect) a signal containing some amount of data unique to the tag 602 back to the interrogator 601 via the communication link 607. A passive tag may be utilized in embodiments where an interrogator 601 is positioned less than a critical communication distance from the tag 602. The critical communication distance is generally defined as the distance beyond which electromagnetic signals reflected by the passive tag are not reliably received by the interrogator 601. The critical communication distance may vary according to embodiments depending upon the amount of power associated with the signal generated by the interrogator 601 and the size and power of the tag transmitter. A more detailed description of a passive tag is discussed below with reference to FIG. 7.



FIG. 7 illustrates an electrical component schematic diagram of the wireless communication apparatus 600 according to embodiments described herein. The embodiment illustrated in FIG. 7 is intended to be representative of a basic functioning tag, and thus it is contemplated that various other electrical component designs or configurations may be implemented to achieve the tag's desired functionality. The tag 602 generally includes a transistor 702, an inductor 704, a capacitor 706, and an integrated circuit 708. In one embodiment, the integrated circuit 708 may be representative of a memory configured to store data unique to the tag 602. In another embodiment, the memory may be configured to store data received by the sensor 604 prior to transmitting the data to an interrogator 601. In certain embodiments, the inductor 704, such as an inductive coil, may be utilized as an antenna to receive and transmit signals between the interrogator 601 and the inductor 704. In one embodiment, the inductor 704 is the antenna 606 and functions to inductively reflect a signal containing data from the tag 602 to an interrogator 601 via a communication link formed between the devices.


Referring back to FIG. 6, the wireless communication apparatus 600, and more specifically, the tag 602, may be positioned within the polishing pad 200 below the upper surface 208 of the pad 200, which contacts substrates during processing. In one embodiment, the wireless communication apparatus 600 is positioned a distance 620 of between about 200 μm and about 500 μm below the upper surface 208. The distance 620 may be selected based upon the desired type of sensing performed by the tag 602 and/or sensor 604 and the topography of the surface of the pad 200 (e.g., grooves, channels, or other features). In another embodiment, the tag 602 may be positioned the distance 620 below the top surface 208 but the sensor 604 may be closer to the top surface 208. While only one sensor 604 is illustrated, it is contemplated that multiple sensors may be incorporated to provide a suite of tracking, sensing, and metrology data to monitor and improve polishing performance. For example, polishing performance determined by the wireless communication apparatus 600 may be performed in-situ (i.e., during polishing) and processing parameters may be adjusted in-situ to improve substrate polishing characteristics. Processing parameters which may be sensed include temperature data, pressure data, electrical conductivity data, elastic modulus data, optical data, acoustic data, film thickness data, and other data types configured to measure processing parameters during a substrate polishing process.


In one embodiment, a region 622 of the pad 200 disposed between the sensor 604 and the polishing surface of the pad 200 may be configured to enhance the measurement of a desired processing parameter by use of the sensor 604 that is coupled to the region 622. The region 622 may extend from the sensor 604 to the top surface 208 of the pad 200 in one embodiment, or the region 622 may extend from the sensor 604 to the grooves 218 in another embodiment. By reducing “resistance” of sensing a desired processing parameter, a more accurate measurement of the processing parameter may be achieved in real time. For example, if the sensor 604 is a temperature sensor, the region 622 may be formed from a thermally conductive material which has a greater coefficient of thermal conductivity than a remainder of the pad 200. By reducing thermal resistance between the polishing surface of the pad 200 and the sensor 604, signal detection by the sensor 604 may be achieved at a greater rate.


In another example, if the sensor 604 is a pressure sensor, and the region 622 may be formed from a material having an elastic modulus greater than the remainder of the pad 200. In other words, the region 622 may be stiffer than the surrounding pad material to facilitate more accurate sensing of a pressure applied at the polishing surface. In another example, if the sensor 604 is an electrical conductivity sensor configured to detect changes in conductivity at the polishing surface, the region 622 may be formed from a material which contains regions that are more electrically conductive than the surrounding pad materials. Thus, electrical resistance in the region 622 may be reduced which may improve the data rate at which the sensor 604 received signals from the polishing surface. It is contemplated that various other sensors may be employed and suitable configured materials may be utilized in the region 622 to improve the accuracy of processing parameter detection. Generally, manufacturing of the region 622 may be advantageously employed via 3D printing processes which enable material selectivity within the pad 200 in a cost efficient and controllable manner.


The sensor 604 is intended to be representative of various types of sensing and metrology apparatus suitable for use in CMP processes. In one embodiment, the sensor 604 may be configured for polishing system identification and tracking. For example, the polishing system 100 may be configured to engage in operation when a polishing pad having the wireless communication apparatus 600 is mounted to the platen 102. In this embodiment, the interrogator 601 in the platen 102 would receive data from the tag 602 indicating the correct type of polishing pad was installed on the polishing system. After authentication of polishing pad type via the tag data received by the interrogator 601, the polishing system 101 would “unlock” and engage in full polishing functionality. In some embodiments, after authentication of polishing pad type via the received tag data, the polishing system 101 adjusts one or more polishing parameters based on the received tag data. In one example, the received tag data may include information relating to the polishing pad type, pad configuration (e.g., surface features 502, base material layer 504, and backing layer 506 types, thickness), surface structure of the pad 200, or other useful information.


In another embodiment, the sensor 604 may be used to track usage statistics of polishing pads installed on the polishing system 100. For example, the number of cycles a pad has been utilized may be tracked by the wireless communication apparatus 600 and that data may be transmitted to the interrogator 601. The data may be interpreted and pad lifetime may be more accurately tracked to ensure pad replacement at intervals which provide for improved polishing characteristics. In some embodiments, the polishing system 101 adjusts one or more polishing parameters based on the tracked usage statistics of the polishing pad that was received in the transmitted tag data.


In some embodiments, the sensor 604 (or multiple sensors in certain embodiments) may be configured to detect one or more polishing parameters. In one example, the sensor 604 may be a thermal sensor (e.g., RTD, thermocouple) that includes components that are configured to detect the temperature of the polishing pad 200, the slurry, the substrate 110, or any combinations thereof. In another example, the sensor 604 may be an acoustic sensor (not shown) configured to determine acoustic vibrational changes during a polishing process. A conductivity sensor is another type of sensor 604 which may be utilized in the wireless communication apparatus 600. In this example, the conductivity sensor (not shown) may be configured to detect metal loading in the slurry (i.e. the increase in metal concentration) or a conductivity change across the surface of the pad 200 as a result of slurry clearing from various regions of the pad 200. In one configuration, the conductivity sensor may include two electrodes (not shown) that are in communication with the tag 602 and wireless communication apparatus 600 and each are exposed at the polishing surface 208. The exposed electrodes can then be used to directly measure the conductivity of the slurry, substrate surface and/or surface of the pad 200 by applying a voltage across the electrodes by use of components found in the tag 602. In some embodiments, the polishing system 101 adjusts one or more polishing parameters based on the one or more polishing parameter data received in transmitted tag data that is delivered to the interrogator 601 from the tag 602.


Another example of a sensor 604 is an accelerometer (e.g., MEMS device) which may be configured to sense changes in angular momentum, dynamic forces, vibrational movement out of plane relative to an angular direction of rotation, and/or torque. An additional example of a sensor 604 is a friction sensor, such as a strain gauge, for sensing sheer stress of the pad 200 against the substrate 110 during polishing. Yet another embodiment of a sensor 604 is a pressure sensor, such as a load cell (e.g., MEMS load cell), which may be configured to measure force applied to the pad 200 and zonal pressure (i.e. chamber 122a, 122b) across the substrate 110. In some embodiments, the polishing system 101 adjusts one or more CMP polishing parameters based on the accelerometer, friction sensor, sheer stress and/or load data transferred from the tag 602 to the interrogator 601.


The aforementioned sensor embodiments may be utilized alone or in combination with one another to more effectively measure processing parameters during polishing. It is contemplated that in-situ processing and/or real time adjustments to the polishing process may be implemented to improve, for example, polishing uniformity and polishing end point detection. Generally, signals generated by the sensor 604 in response to one or more detected processing parameters may be encoded by the tag 602 and transmitted by the antenna 606. The polishing system 101 is configured to adjust one or more polishing process parameters based on the sensor data received in the transmitted tag data that is delivered to the interrogator 601 and controller 612 from the tag 602.


The interrogator 601 may also be communicatively coupled to a processor based system controller such as controller 612. For example, the controller 612 may be configured to cause generation of a signal by the reader 608. The controller 612 may also be configured to receive and analyze data received from the wireless communication apparatus 602 via the interrogator 601. The controller 612 includes a programmable central processing unit (CPU) 614 that is operable with a memory 618 (e.g., non-volatile memory) and a mass storage device, an input control unit, and a display unit (not shown), such as power supplies, clocks, cache, input/output (I/O) circuits, and the like, coupled to the various components of the polishing apparatus 100 to facilitate control of the substrate polishing process. The controller 612 may also include hardware for monitoring substrate processing through system level sensors in the polishing apparatus 100.


To facilitate control of the polishing apparatus 100 as described above, and more specifically, the wireless communication apparatus 600 and the interrogator 601, the CPU 614 may be one of any form of general purpose computer processor that can be used in an industrial setting, such as a programmable logic controller (PLC), for controlling various chambers and sub-processors. The memory 618 is coupled to the CPU 614 and the memory 618 is non-transitory and may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk drive, hard disk, or any other form of digital storage, local or remote. Support circuits 616 are coupled to the CPU 614 for supporting the processor in a conventional manner. Signal generation instructions, data reception, and analysis from the wireless communication apparatus 600 via the interrogator 601 may be performed by and stored in the memory 618, typically as a software routine. The software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU 618.


The memory 618 is in the form of computer-readable storage media that contains instructions, that when executed by the CPU 614, facilitates the operation of the polishing apparatus 100, including operation of the wireless communication apparatus 600 and the interrogator 601. The instructions in the memory 618 are in the form of a program product such as a program that implements the method of the present disclosure. The program code may conform to any one of a number of different programming languages. In one example, the disclosure may be implemented as a program product stored on computer-readable storage media for use with a computer system. The program(s) of the program product define functions of the embodiments (including the methods described herein). Illustrative computer-readable storage media include, but are not limited to: (i) non-writable storage media (e.g., read-only memory devices within a computer such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips or any type of solid-state non-volatile semiconductor memory) on which information is permanently stored; and (ii) writable storage media (e.g., floppy disks within a diskette drive or hard-disk drive or any type of solid-state random-access semiconductor memory) on which alterable information is stored. Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure.



FIG. 8 illustrates a partial, cross-sectional view of the polishing head 108 illustrating the retaining ring 120 and platen 102 incorporating the wireless communication apparatus 600 according to embodiments described herein. The retaining ring 120 is generally configured and positioned to prevent undesirable movement of the substrate 110 during polishing processes. As illustrated, the retaining ring 120 may be disposed radially outward of the flexible membrane 132. Accordingly, the retaining ring 120 is disposed adjacent to and in close proximity with the pad 106 and platen 102. In certain embodiments, the retaining ring 120 may be removably coupled to the polishing head 108 to facilitate replacement of the retaining ring 120, if desired.


In one embodiment, the wireless communication apparatus 600 may be disposed on or define a surface of the retaining ring 120 facing the pad 106. Alternatively, the wireless communication apparatus 600 may be disposed at another location within the retaining ring 120 away from the surface of retaining ring 120 facing the pad 106. The wireless communication apparatus 600 and the interrogator 601 may be disposed within such proximity to allow for near field communication during polishing processes. Thus, it may be advantageous to incorporate one or more sensors, such as the sensors described above, into the retaining ring 120.


In one embodiment, the retaining ring 120 and the wireless communication apparatus 600 may be manufactured by a 3D printing process. The 3D printing process may enable concurrent fabrication of the retaining ring 120 and the wireless communication apparatus 600. Alternatively, a void may be maintained during 3D printing of the retaining ring 120 and a pre-manufactured wireless communication apparatus may be subsequently inserted into the void. In certain embodiments, the wireless communication apparatus 600 may provide processing data regarding revolutions of the polishing head 108 through the polishing system 100. It is also contemplated that the retaining ring 100 and the wireless communication apparatus 600 may be utilized to “lock” operation of the polishing system 100 unless suitably configured components, such as the pad 106, the platen 102, and the polishing head 108, are each installed on the polishing system 100. Other polishing process parameter monitoring and sensing, such as thermal, conductivity, pressure, stress, and acoustic sensing may also be detected by the wireless communication apparatus 600 disposed in the retaining ring 120.



FIG. 9 illustrates a partial, cross-sectional view of the flexible membrane 132 and platen 102 incorporating the wireless communication apparatus 600 according to embodiments described herein. The flexible membrane 132 is generally configured to secure the substrate 110 thereon and urge the substrate 110 against the pad 106 during polishing. The flexible membrane 132 generally utilizes a pressure gradient to couple the substrate 110 thereon prevent undesirable movement of the substrate 110 during polishing processes. In certain embodiments, the flexible membrane 132 may be removably coupled to the polishing head 108 to facilitate replacement of the flexible membrane 132, if desired.


In one embodiment, the wireless communication apparatus 600 may be disposed on or define a surface of the flexible membrane 132 defining either or both of the chambers 122a, 122b. Alternatively, one or more of the wireless communication apparatus 600 may be disposed within a portion of the flexible membrane 132. Accordingly, the flexible membrane 132 is disposed adjacent to and in close proximity with the rear surface of a substrate 110 that is being urged against the pad 106 and platen 102. The wireless communication apparatus 600 and the interrogator 601 may be disposed within such proximity to allow for near field communication during polishing processes. Thus, it may be advantageous to incorporate one or more sensors, such as the sensors described above, into the flexible membrane 132.


In one embodiment, the flexible membrane 132 and the wireless communication apparatus 600 may be manufactured by a 3D printing process. The 3D printing process may enable concurrent fabrication of the flexible membrane and the wireless communication apparatus 600. In this embodiment, the wireless communication apparatus 600 may be disposed wholly or partially within the flexible membrane 132. In this example, it is contemplated that the wireless communication apparatus 600 may exhibit a suitable degree of flexibility to accommodate flexing of the flexible membrane 132. Alternatively, a void may be maintained during 3D printing of the flexible membrane 132 and a pre-manufactured wireless communication apparatus may be subsequently inserted into the void.


Similar to the wireless communication apparatus disposed within the retaining ring 120, the wireless communication apparatus 600 may provide processing data regarding revolutions of the polishing head 108 including the flexible membrane 132 through the polishing system 100. In another embodiment, the wireless communication apparatus 600 may provide processing data regarding pressurization and depressurization cycles of the flexible membrane 132. It is also contemplated that the flexible membrane 132 and the wireless communication apparatus 600 may be utilized to “lock” operation of the polishing system 100 unless suitably configured components, such as the pad 106, the platen 102, and the polishing head 108 containing the flexible membrane 132, are each installed on the polishing system 100. As described above, the flexible membrane 132 incorporating the wireless communication apparatus 600 may be especially useful in providing monitoring and sensing of pressure data applied against the substrate 110. Other polishing process parameter monitoring and sensing, such as thermal, conductivity, stress, and acoustic sensing may also be performed by the wireless communication apparatus 600 disposed in the flexible membrane 132.


It is contemplated that the embodiments of FIG. 8 and FIG. 9 may be combined to provide a polishing system 100 having a wireless communication apparatus 600 disposed within both the retaining ring 120 and the flexible membrane 132. Generally, the wireless communication apparatus 600 may be configured to sense the same processing parameter at different locations within the polishing system 100 or the wireless communication apparatus 600 may be configured to sense different processing parameters. Moreover, wireless communication apparatus 600 may be manufactured into other components, such as 3D printed components, of the polishing head 108. In addition, the wireless communication apparatus 600 coupled to either the retaining ring 120 or the flexible membrane 132 may communicate with the interrogator 601, which may be fixably disposed within the platen 102. Signals received by the interrogator 601 may be analyzed by the controller 612 and the retaining ring 120 and/or flexible membrane 132 may be removed from the polishing head 108. For example, if the signal from the wireless communication apparatus 600 indicates poor processing performance of the retaining ring 120 and/or flexible membrane 132, the retaining ring 120 and/or flexible membrane 132 may be replaced. Alternatively, if the retaining ring 120 and/or flexible membrane 132 are not configured for use in the polishing head 108, the controller 612 may indicate their incompatibility and they may be replaced with suitable configured components.


The wireless communication apparatus 600 is generally configured to collect data at a millisecond data rate or greater rate. Thus, a time constant suitable for detecting and transmitting processing parameter data may be an advantage of the wireless communication apparatus 600. Improved time constants may be derived from the physical location of the wireless communication apparatus 600 relative to the parameters being detected in certain embodiments. Thus, real time parameter sensing may be performed and communicated to the controller 612 to improve polishing processes.


In addition, the wireless communication apparatus 600 may be operated continuously or intermittently. For example, if the wireless communication apparatus 600 is disposed within the pad 200, the wireless communication apparatus 600 may be configured to continuously sense various processing parameters. Alternatively, the wireless communication apparatus 600 may be operated intermittently to detect processing parameters when the substrate is being polishing in a region adjacent the wireless communication apparatus 600. Similarly, wireless communication apparatus 600 coupled to the retaining ring 120 or flexible membrane 132 may be operated continuously or intermittently. The controller 612 may be coupled to a proximity sensor (not shown) or the like which may determine the location of the polishing head 108 relative to the interrogator 601. The proximity sensor may provide a signal to the controller 612 when the polishing head is positioned in a region suitable for communication by the interrogator 601. The controller 612 may cause the interrogator 601 to initiate signal transmission between the wireless communication apparatus 600 and the interrogator 601. When the polishing head 108 (and the wireless communication apparatus 600 coupled to either the retaining ring 120 or the flexible membrane 132) is located in a position unsuitable for communication with the interrogator 601, the proximity sensor may signal to the controller 612 and the controller 612 may terminate signal transmission and/or reception from the interrogator 601.


In embodiments utilizing multiple wireless communication apparatus 600, the interrogator 601 may be configured to communicate with the multiple wireless communication apparatus 600 and coordinate polishing via the controller 612. Alternatively, multiple interrogators may be utilized. In this embodiment, a single wireless communication apparatus may be communicatively coupled to a single interrogator. It is contemplated that any number of wireless communication apparatus and interrogators may be utilized to improve polishing process monitoring and sensing. If multiple wireless communication apparatus and interrogators are utilized, various wavelength filters and/or electromagnetic shielding apparatus may be incorporated into the polishing system to reduce or eliminate undesirable cross-talk between wireless communication apparatus and/or interrogators.



FIG. 10 illustrates a method 1000 of manufacturing a polishing pad with an RFID tag according to one embodiment described herein. While the embodiments of FIG. 10 and FIG. 11 described below are directed to additive manufacturing of a polishing pad, it is contemplated that the embodiments may be applicable to other polishing system components, such as retaining rings and flexible membranes, among others. Moreover, other manufacturing processes, such as casting and molding may be utilized to form a pad having an RFID tag disposed therein.


At operation 1010, a first portion of the polishing pad is printed. Suitable materials for the first portion may include those referenced with regard to FIG. 2, but generally include polymeric materials configured to polish a substrate. The printing process, such as a 3D printing process, is described in greater detail with regard to FIG. 12. The first portion of the polishing pad may be a base layer or a combination of pad features.


At operation 1020, wireless communication apparatus 600, such as an RFID tag, are printed on the first portion. Suitable materials for printing the RFID tag generally include conductive materials or semi-conductive materials. Examples of conductive and/or semi-conductive polymer materials include, but are not limited to poly(fluorene), poly(phenylene), poly(pyrene), poly(azulene), poly(naphthalene), poly(acetylene), poly(p-phenylene vinylene), poly(pyrrole), poly(carbazole), poly(indole), poly(azepine), poly(aniline), poly(thiophene), poly (3,4-ethylenedioxythiphene), and poly(p-phenylene sulfide) materials, among others, including combinations and mixtures thereof. In addition, materials, such as inks, containing nano-particles of desired conducting or semiconducting properties may be utilized. For example, silver or gold nano-particles may be utilized to form a conductive ink or silicon nano-particles may be utilized to form a semiconducting ink. The aforementioned nano-particles may be incorporated into the above referenced polymer materials or may be utilized with other suitable materials. In other embodiments, various portions of the RFID tag may be printed by depositing metallic materials by an additive manufacturing process (3D Printing) or screen printing process.


At operation 1030 a second portion of the polishing pad is printed over and around the RFID tag. The second portion of the polishing pad may also be printed over the first portion of the polishing pad. As such, the RFID tag may be wholly or partially encapsulated within the polishing pad. In one embodiment, the second portion of the polishing pad may be configured to contact and polish a substrate. In another embodiment, the first portion of the polishing pad may be configured to contact and polish the substrate.



FIG. 11 illustrates a method 1100 of manufacturing a polishing pad incorporating wireless communication apparatus 600, such as an RFID tag, according to one embodiment described herein. At operation 1110, a first portion of a polishing pad may be printed with a recess or void formed therein. The recess may be a region of the first portion where substantially no pad material exists. The recess may be sized with suitable dimensions to accommodate a pre-manufactured RFID tag.


At operation 1120, a preformed RFID tag may be inserted into the recess formed in the first portion. The RFID tag may be formed on a tag substrate or it may be press fit, glued, adhered, or otherwise mechanically coupled to the first portion within the recess. At operation 1130, a second portion of the polishing pad may be printed over and around the RFID tag. Accordingly, the pre-manufactured RFID tag may be encapsulated and disposed within the first and second portions of the pad.


In the embodiments described with regard to FIG. 10 and FIG. 11, the tag printing process and recess formation process may take into consideration the compressibility of the ultimately formed pad. As the RFID tag is generally formed from materials that may have mechanical properties and dynamic properties different from the materials of the first and second pad portions, it is contemplated that various microstructural elements may be incorporated into the RFID tag or portions of the pad to provide a pad having more uniform mechanical properties and dynamic properties across the pad. It is also contemplated that various other components, such as wiring, may be integrally manufactured into the polishing pad. In some embodiments, the composition and/or properties of the layers of added material that are disposed under and/or over the RFID tag are adjusted to provide uniform mechanical properties and dynamic properties across the pad. In other words, the presence of the RFID tag within localized regions of the polishing pad can be compensated for by adjusting the material properties of materials under, over or adjacent to the RFID tag by adjusting the materials and/or material structures deposited using the additive manufacturing processes described herein. Thus, pads, membranes, retaining rings and other structures that are formed by use of an additive manufacturing process, and have one or more RFID tags disposed therein, can have more uniform mechanical and dynamic properties even though the one or more RFID tags are disposed within the formed device.



FIG. 12 is a schematic, sectional view of a 3D printing apparatus 1200 for manufacturing polishing pads and other CMP apparatus according to embodiments described herein. Although specific examples described below are made with reference to a polishing pad, such as polishing pads 200, 300, 400, and 500, it is contemplated that other CMP apparatus, such as retaining rings (i.e. retaining ring 120) and flexible membranes (i.e. flexible membrane 132) may also be manufactured by 3D printing processes. In one embodiment, the polishing pad 200 may be printed on a support 1202. The polishing pad 200 is formed by a droplet ejecting printer 1206 from a CAD (computer-aided design) program. The droplet ejecting printer 1206 and the support 1202 may move relative to each other during the printing process.


The droplet ejecting printer 1206 generally includes one or more print heads having nozzles for dispensing precursors. The precursors may be provided in various morphologies, such as liquid or powder forms. In the illustrated embodiment, the droplet ejecting printer 1206 includes a first print head 1208 having a first nozzle 1210 and a second print head 1214 having a second nozzle 1212. The first nozzle 1210 may be configured to dispense a liquid precursor for a first material, such as a soft or elastic material, while the second nozzle 1212 may be used to dispense a liquid precursor for a second material, such as a hard material. In another embodiment, the heads 1208, 1214 and nozzles 1210, 1212 may be configured to heat a polymeric precursor to flow the precursor in a flowable or liquid-like state to enable formation of a desired apparatus.


In other embodiments, the droplet ejecting printer 1206 may include more than two print heads to form polishing pads with more than two materials. For example, in embodiments related to printing an RFID tag, such as the wireless communication apparatus 600, the first nozzle 1210 may be configured to dispense a polymeric precursor of a conductive or semi-conductive material to print electrically conductive components of the tag. The second nozzle 1212 may be configured to dispense a polymeric precursor of a non-conductive material for non-electrically conductive tag components. The precursors may be dispensed at selected locations or regions to form the polishing pad 200. These selected locations collectively form the target printing pattern and can be stored as a CAD-compatible file that is then read by an electronic controller 1204 (e.g., a computer) that controls the droplet ejecting printer 1206.


3D printing processes as described herein include, but are not limited to, polyjet deposition, inkjet printing, fused deposition modeling, binder jetting, powder bed fusion, selective laser sintering, stereolithography, vat photopolymerization digital light processing, sheet lamination, and directed energy deposition, among other 3D deposition or printing processes.


After 3D printing, the polishing pads may be solidified by curing. Curing may be performed by heating the printed polishing pads to a curing temperature. Alternatively, curing may be performed by exposing the printed polishing pad to a ultraviolet light generated by an ultra violet light source.


3D printing offers a convenient and highly controllable process for producing polishing pads formed from different materials and/or different compositions of materials. For example, 3D printing enables efficient and cost-effective incorporation of NFC apparatus, such as RFID tags, into polishing pads.


For example, the polishing pad 200 may be formed from a mixture of two or more materials. In this embodiment, the pad and pad features may be formed from one or more first materials and wireless communication apparatus 600 integrally disposed within the pad may be formed from one or more second materials. In one embodiment, the one or more first materials are predominantly not electrically conductive while the one or more second materials are predominantly electrically conductive or semi-conductive. In this embodiment, the pad 200 and polishing features 204, 206 may be formed with a mixture of first material droplets expressed from the first nozzle 1210 via the first print head 1208. The wireless communication apparatus (not shown here but illustrated in greater detail in FIG. 6) may be formed with a mixture of second material droplets expressed from the second nozzle 1212 via the second print head 1214. The print head 1210 may first align with pixels corresponding to the polishing features 204, 206 and dispense droplets on predetermined pixels. The print head 1212 may then align with the pixels corresponding to the wireless communication apparatus and dispense droplets on predetermined pixels. As a result, polishing features 204, 206 and wireless communication apparatus may be formed in a sequential process. It is also contemplated that polishing features 204, 206 and wireless communication apparatus 600 may be formed simultaneously, depending on the design of the 3D printing apparatus 1200.


Properties of the polishing features 204, 206 may be adjusted or tuned according to the ratio and/or distribution of the one or more first materials. The wireless communication apparatus 600 may be formed according to the ratio and/or distribution of the one or more second materials. In one embodiment, the composition of the polishing features 204, 206 is controlled by selecting size, location, speed, and/or density of the droplets expressed from the first nozzle 1210. Similarly, the composition of the wireless communication apparatus is controlled by selecting the size, location, speed, and/or density of the droplets expressed from the second nozzle 1212. Accordingly, it is contemplated that embodiments of the present disclosure encompass forming a polishing pad with a plurality of materials and that the material may be utilized to manufacture a polishing pad having wireless communication apparatus disposed therein.


Additive Manufacturing Process Example

In one embodiment, 3D printing may be utilized to manufacture polishing pads, retaining rings, flexible membranes, and other CMP polishing apparatus components described herein. In one embodiment, the method of forming a 3D object may be performed by use of a CAD model of the components and use of a slicing algorithm that is used to map information about the components for every layer of the 3D object. A layer of the object may be formed by distributing a powder over the surface of a powder bed. A chosen binder material may then be deposited so as to selectively join particles where regions of the object are to be formed. An actuator (e.g., piston), which supports the powder bed and the components being manufactured, may be lowered in order for the next powder layer to be formed. After each layer is formed, the process is repeated followed by a final curing process (e.g., UV exposure or thermal treatment) to finalize a portion of the object. Because 3D printing can exercise local control over the material composition, microstructure, and surface texture, various (and previously inaccessible) geometries may be achieved with the methods described herein.


In one embodiment, a polishing pad as described herein may be represented in a data structure readable by a computer rendering device or a computer display device. FIG. 12 illustrates a schematic representation of a computer system (i.e. electronic controller 1204) with a computer readable medium according to one embodiment. The computer readable medium may contain a data structure that represents the polishing pad. The data structure may be a computer file and may contain information about the structures, materials, textures, physical properties, or other characteristics of the one or more components. The data structure may also contain code, such as computer executable code or device control code that engages selected functionality of a computer rendering device or a computer display device. The data structure may be stored on the computer readable medium. The computer readable medium may include a physical storage medium such as a magnetic memory or any convenient physical storage medium. The physical storage medium may be readable by the computer system to render the component represented by the data structure on a computer screen or a physical rendering device which may be an additive manufacturing device, such as a 3D printer.


While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims
  • 1. A method of manufacturing a polishing pad, comprising: 3D printing a plurality of polishing features of a polymeric body by distributing a first material, wherein the plurality of polishing features define a polishing surface configured to contact a substrate;3D printing one or more base features of the polymeric body by distributing a second material that is different from the first material; anddisposing a radio frequency identification (RFID) tag on a surface of a recess formed in the one or more base features of the polymeric body and at a distance from the polishing surface, whereinthe one or more base features are each disposed at a distance from the plurality of polishing features,the one or more base features and the plurality of polishing features are disposed in an alternating arrangement along a direction parallel to the polishing surface,the RFID tag stores a plurality of information associated with two or more properties of the polymeric body, anda region disposed between the polishing surface and the surface of the recess has a different composition than the first material of the plurality of polishing features of the polymeric body and the second material of the one or more base features of the polymeric body.
  • 2. The method of claim 1, wherein the first and second materials are selected from the group consisting of epoxies, phenolics, amines, polyesters, urethanes, silicon, acrylates, including mixtures, copolymers, and grafts thereof.
  • 3. The method of claim 1, wherein the RFID tag has an inductive antenna configured to communicate with an interrogator using a wireless communication technique.
  • 4. The method of claim 1, wherein the distance from the polishing surface is between 200 μm and about 500 μm.
  • 5. The method of claim 1, wherein the RFID tag comprises an electrically conductive polymer material comprising conductive nano-particles.
  • 6. The method of claim 1, wherein the one or more polishing features are formed on the one or more base features, the one or more polishing features having a first height, the one or more base features having a second height, wherein the first height is greater than the second height.
  • 7. The method of claim 1, wherein the one or more base features of the polymeric body have a lower hardness value than the plurality of polishing features of the polymeric body.
  • 8. The method of claim 1, wherein the one or more base features of the polymeric body have a lower value of elastic modulus than the plurality of polishing features of the polymeric body.
  • 9. The method of claim 1, wherein the first and second materials comprise an acrylate.
  • 10. The method of claim 1, wherein the RFID tag further comprises one or more sensors.
  • 11. The method of claim 10, wherein at least one of the one or more sensors are selected from the group consisting of an acoustic sensor, a conductivity sensor, an acceleration sensor, a torque sensor, and a friction sensor, and the RFID tag is configured to communicate with an interrogator using a wireless communication technique.
  • 12. The method of claim 1, wherein the plurality of polishing features are arranged in concentric rings.
  • 13. A method of manufacturing a polishing pad, comprising: 3D printing a plurality of polishing features of a polymeric body by distributing a first material, wherein the plurality of polishing features define a polishing surface configured to contact a substrate;3D printing one or more base features of the polymeric body by distributing a second material that is different from the first material; anddisposing a radio frequency identification (RFID) tag on a surface of a recess formed in the one or more base features of the polymeric body and at a distance from the polishing surface, whereinthe one or more base features are each disposed at a distance from the plurality of polishing features,the one or more base features and the plurality of polishing features are disposed in an alternating arrangement along a direction parallel to the polishing surface,the RFID tag stores a plurality of information associated with two or more properties of the polymeric body;a region disposed between the polishing surface and the surface of the recess has a different composition than the first material of the plurality of polishing features of the polymeric body and the second material of the one or more base features of the polymeric body; andthe recess is larger than the RFID tag.
  • 14. The method of claim 13, wherein the first and second materials are selected from the group consisting of epoxies, phenolics, amines, polyesters, urethanes, silicon, acrylates, including mixtures, copolymers, and grafts thereof.
  • 15. The method of claim 13, wherein the RFID tag has an inductive antenna configured to communicate with an interrogator using a wireless communication technique.
  • 16. The method of claim 13, wherein the distance from the polishing surface is between 200 μm and 500 μm.
  • 17. The method of claim 13, wherein the RFID tag comprises an electrically conductive polymer material comprising conductive nano-particles.
  • 18. The method of claim 13, wherein the one or more polishing features are formed on the one or more base features, the one or more polishing features having a first height, the one or more base features having a second height, wherein the first height is greater than the second height.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of co-pending U.S. patent application Ser. No. 14/935,134, filed Nov. 6, 2015, which is herein incorporated by reference.

US Referenced Citations (752)
Number Name Date Kind
2001911 Wooddell et al. May 1935 A
3357598 Kraft Dec 1967 A
3741116 Green et al. Jun 1973 A
4459779 Shen Jul 1984 A
4575330 Hull Mar 1986 A
4836832 Tumey et al. Jun 1989 A
4841680 Hoffstein et al. Jun 1989 A
4844144 Murphy et al. Jul 1989 A
4942001 Murphy et al. Jul 1990 A
4960673 Beck et al. Oct 1990 A
5096530 Cohen Mar 1992 A
5120476 Scholz Jun 1992 A
5121329 Crump Jun 1992 A
5178646 Barber, Jr. et al. Jan 1993 A
5193316 Olmstead Mar 1993 A
5212910 Breivogel et al. May 1993 A
5287663 Pierce et al. Feb 1994 A
5300417 Lushington et al. Apr 1994 A
5378527 Nakanishi et al. Jan 1995 A
5387380 Cima et al. Feb 1995 A
5470368 Culler Nov 1995 A
5533923 Shamouilian et al. Jul 1996 A
5605499 Sugiyama et al. Feb 1997 A
5605760 Roberts Feb 1997 A
5609517 Lofaro Mar 1997 A
5624303 Robinson Apr 1997 A
5626919 Chapman et al. May 1997 A
5645471 Strecker Jul 1997 A
5664986 Roh Sep 1997 A
5690540 Elliott et al. Nov 1997 A
5738574 Tolles et al. Apr 1998 A
5748434 Rossman et al. May 1998 A
5778481 Amsden et al. Jul 1998 A
5795218 Doan et al. Aug 1998 A
5876268 Lamphere et al. Mar 1999 A
5876490 Ronay Mar 1999 A
5888121 Kirchner et al. Mar 1999 A
5900164 Budinger et al. May 1999 A
5905099 Everaerts et al. May 1999 A
5906863 Lombardi et al. May 1999 A
5910471 Christianson et al. Jun 1999 A
5919082 Walker et al. Jul 1999 A
5921855 Osterheld et al. Jul 1999 A
5932040 Audisio Aug 1999 A
5932290 Lombardi et al. Aug 1999 A
5940674 Sachs et al. Aug 1999 A
5944583 Cruz et al. Aug 1999 A
5951380 Kim Sep 1999 A
5965460 Rach et al. Oct 1999 A
5976000 Hudson Nov 1999 A
5984769 Bennett et al. Nov 1999 A
5989111 Lamphere et al. Nov 1999 A
5989470 Doan et al. Nov 1999 A
6017609 Akamatsu et al. Jan 2000 A
6022264 Cook et al. Feb 2000 A
6029096 Manners et al. Feb 2000 A
6036579 Cook et al. Mar 2000 A
6039836 Dhindsa et al. Mar 2000 A
6062968 Sevilla et al. May 2000 A
6077581 Kuramochi et al. Jun 2000 A
6090475 Robinson Jul 2000 A
6095084 Shamouilian et al. Aug 2000 A
6095902 Reinhardt Aug 2000 A
6106661 Raeder Aug 2000 A
6117000 Anjur et al. Sep 2000 A
6121143 Messner et al. Sep 2000 A
6122564 Koch et al. Sep 2000 A
6126532 Sevilla et al. Oct 2000 A
6155910 Lamphere et al. Dec 2000 A
6176992 Talieh Jan 2001 B1
6201208 Wendt et al. Mar 2001 B1
6206759 Agarwal et al. Mar 2001 B1
6210254 Cook et al. Apr 2001 B1
6213845 Elledge Apr 2001 B1
6228133 Thurber et al. May 2001 B1
6231629 Christianson et al. May 2001 B1
6231942 Blizard et al. May 2001 B1
6232236 Shan et al. May 2001 B1
6241596 Osterheld et al. Jun 2001 B1
6254460 Walker et al. Jul 2001 B1
6257973 Fernand Guiselin Jul 2001 B1
6267641 Vanell et al. Jul 2001 B1
6273806 Bennett et al. Aug 2001 B1
6290579 Walker Sep 2001 B1
6309276 Tsai et al. Oct 2001 B1
6309282 Wright et al. Oct 2001 B1
6319108 Adefris et al. Nov 2001 B1
6322728 Brodkin et al. Nov 2001 B1
6325706 Krusell et al. Dec 2001 B1
6328634 Shen et al. Dec 2001 B1
6332832 Suzuki Dec 2001 B1
6338901 Veerasamy Jan 2002 B1
6361411 Chopra et al. Mar 2002 B1
6361832 Agarwal et al. Mar 2002 B1
6368184 Beckage Apr 2002 B1
6390890 Molnar May 2002 B1
6399501 Birang et al. Jun 2002 B2
6402604 Guiselin Jun 2002 B2
6407669 Brown et al. Jun 2002 B1
6423255 Hoechsmann et al. Jul 2002 B1
6428586 Yancey Aug 2002 B1
6454634 James et al. Sep 2002 B1
6477926 Swisher et al. Nov 2002 B1
6488570 James et al. Dec 2002 B1
6500053 James et al. Dec 2002 B2
6506097 Adams et al. Jan 2003 B1
6518162 Ono et al. Feb 2003 B2
6520834 Marshall Feb 2003 B1
6520847 Osterheld et al. Feb 2003 B2
6544373 Chen et al. Apr 2003 B2
6548407 Chopra et al. Apr 2003 B1
6569373 Napadensky May 2003 B2
6582283 James et al. Jun 2003 B2
6585563 Redeker et al. Jul 2003 B1
6586494 Mejiritski et al. Jul 2003 B2
6592443 Kramer et al. Jul 2003 B1
6641463 Molnar Nov 2003 B1
6641471 Pinheiro et al. Nov 2003 B1
6645061 Bennett et al. Nov 2003 B1
6682402 Roberts et al. Jan 2004 B1
6684704 Obeng Feb 2004 B1
6685548 Chen et al. Feb 2004 B2
6692338 Kirchner Feb 2004 B1
6699115 Osterheld et al. Mar 2004 B2
6719818 Birang et al. Apr 2004 B1
6736709 James et al. May 2004 B1
6736714 Dudovicz May 2004 B2
6746225 McHugh Jun 2004 B1
6746311 Kessel Jun 2004 B1
6749485 James et al. Jun 2004 B1
6749714 Ishikawa et al. Jun 2004 B1
6773474 Koehnle et al. Aug 2004 B2
6783436 Muldowney Aug 2004 B1
6790883 Ogawa et al. Sep 2004 B2
6796880 Redeker et al. Sep 2004 B2
6811680 Chen et al. Nov 2004 B2
6811937 Lawton Nov 2004 B2
6815570 Negiz et al. Nov 2004 B1
6833046 Wright Dec 2004 B2
6838149 Lugg Jan 2005 B2
6840843 Jones et al. Jan 2005 B2
6843711 Muldowney Jan 2005 B1
6847014 Benjamin et al. Jan 2005 B1
6855588 Liao et al. Feb 2005 B1
6860793 Budinger et al. Mar 2005 B2
6860802 Vishwanathan et al. Mar 2005 B1
6866807 Comb et al. Mar 2005 B2
6869350 Roberts et al. Mar 2005 B2
6875096 Park et al. Apr 2005 B2
6875097 Grunwald Apr 2005 B2
6887137 Lee et al. May 2005 B2
6896593 Prasad May 2005 B2
6896765 Steger May 2005 B2
6913517 Prasad Jul 2005 B2
6935931 Prasad Aug 2005 B2
6950193 Discenzo Sep 2005 B1
6955588 Anderson, II et al. Oct 2005 B1
6984163 Roberts Jan 2006 B2
6991517 Redeker et al. Jan 2006 B2
6991528 Hu et al. Jan 2006 B2
6998166 Prasad Feb 2006 B2
7018560 Liu et al. Mar 2006 B2
7029747 Huh et al. Apr 2006 B2
7044836 Sun et al. May 2006 B2
7059949 Elmufdi et al. Jun 2006 B1
7059950 Muldowney Jun 2006 B1
7077879 Ogawa et al. Jul 2006 B2
7120512 Kramer et al. Oct 2006 B2
7125318 Muldowney Oct 2006 B2
7132033 Boldizar et al. Nov 2006 B2
7166017 Minamihaba et al. Jan 2007 B2
7169030 Kulp Jan 2007 B1
7186164 Manens Mar 2007 B2
7186322 Sato et al. Mar 2007 B2
7192336 Kramer et al. Mar 2007 B2
7195544 Prasad Mar 2007 B2
7204742 Prasad Apr 2007 B2
7234224 Naugler et al. Jun 2007 B1
7252871 Crkvenac et al. Aug 2007 B2
7264641 Prasad Sep 2007 B2
7267607 Prasad Sep 2007 B2
7267610 Elmufdi et al. Sep 2007 B1
7268173 Graichen et al. Sep 2007 B2
7300340 Elmufdi et al. Nov 2007 B1
7300619 Napadensky et al. Nov 2007 B2
7311590 Muldowney Dec 2007 B1
7311862 Prasad Dec 2007 B2
7332104 Minamihaba et al. Feb 2008 B2
7357698 Choi Apr 2008 B2
7371160 Cruz et al. May 2008 B1
7377840 Deopura et al. May 2008 B2
7382959 Jacobsen Jun 2008 B1
7425172 Misra et al. Sep 2008 B2
7425250 Basol et al. Sep 2008 B2
7427340 Mavliev et al. Sep 2008 B2
7435161 Prasad et al. Oct 2008 B2
7435165 Prasad Oct 2008 B2
7438636 Kulp et al. Oct 2008 B2
7438795 Wylie et al. Oct 2008 B2
7445847 Kulp Nov 2008 B2
7455571 Kuo et al. Nov 2008 B1
7497885 Kollodge Mar 2009 B2
7513818 Miller et al. Apr 2009 B2
7517277 Muldowney Apr 2009 B2
7517488 Saikin Apr 2009 B2
7520798 Muldowney Apr 2009 B2
7524345 Nevoret et al. Apr 2009 B2
7530880 Bajaj et al. May 2009 B2
7531117 Ederer et al. May 2009 B2
7537446 James et al. May 2009 B2
7582127 Vacassy et al. Sep 2009 B2
7635290 Muldowney Dec 2009 B2
7648645 Roberts et al. Jan 2010 B2
7652286 Isobe et al. Jan 2010 B2
7699684 Prasad Apr 2010 B2
7704122 Misra et al. Apr 2010 B2
7704125 Roy et al. Apr 2010 B2
7731568 Shimomura et al. Jun 2010 B2
7754118 Huh et al. Jul 2010 B2
7758764 Dhindsa et al. Jul 2010 B2
7762870 Ono et al. Jul 2010 B2
7815778 Bajaj Oct 2010 B2
7828634 Jiang et al. Nov 2010 B2
7840305 Behr et al. Nov 2010 B2
7846008 Bajaj Dec 2010 B2
7871309 Ogawa et al. Jan 2011 B2
7875091 Nevorct et al. Jan 2011 B2
7926521 Izumoto et al. Apr 2011 B2
7935276 Zhou et al. May 2011 B2
7943681 Lee et al. May 2011 B2
7976901 Kume et al. Jul 2011 B2
8047899 Chen et al. Nov 2011 B2
8053487 Ragain, Jr. et al. Nov 2011 B2
8057282 Muldowney Nov 2011 B2
8062102 Park et al. Nov 2011 B2
8062103 Muldowney Nov 2011 B2
8066555 Bajaj Nov 2011 B2
8067814 Takehara et al. Nov 2011 B2
8075372 Prasad Dec 2011 B2
8075745 Bajaj Dec 2011 B2
8083820 Kollodge et al. Dec 2011 B2
8111603 Nishimura et al. Feb 2012 B2
8118641 Kulp et al. Feb 2012 B2
8142860 Vanmaele et al. Mar 2012 B2
8142869 Kobayashi et al. Mar 2012 B2
8172648 Lefevre et al. May 2012 B2
8177603 Bajaj May 2012 B2
8211324 Dhindsa et al. Jul 2012 B2
8211543 Kato et al. Jul 2012 B2
8257545 Loyack et al. Sep 2012 B2
8260447 Mattes et al. Sep 2012 B2
8282866 Hiraide Oct 2012 B2
8287793 Deopura et al. Oct 2012 B2
8288448 Kulp Oct 2012 B2
8292592 Welch et al. Oct 2012 B2
8292692 Bajaj Oct 2012 B2
8337282 Park et al. Dec 2012 B2
8349706 Noda Jan 2013 B2
8377623 Fong Feb 2013 B2
8380339 Misra et al. Feb 2013 B2
8388410 Albright, Jr. Mar 2013 B2
8393934 Sung Mar 2013 B2
8398461 Wang Mar 2013 B2
8398466 Sung et al. Mar 2013 B2
8409976 Hieslmair Apr 2013 B2
8444890 Drury May 2013 B2
8545292 Shinchi et al. Oct 2013 B2
8546717 Stecker Oct 2013 B2
8562389 Benvegnu et al. Oct 2013 B2
8563619 Dhindsa et al. Oct 2013 B2
8598523 Stecker et al. Dec 2013 B2
8602851 Lombardo et al. Dec 2013 B2
8647179 Nakayama et al. Feb 2014 B2
8673166 Okita et al. Mar 2014 B2
8676537 Liu et al. Mar 2014 B2
8684794 Lefevre et al. Apr 2014 B2
8690978 Arnaud et al. Apr 2014 B2
8702479 Huang et al. Apr 2014 B2
8709114 Cantrell et al. Apr 2014 B2
8712571 Liu et al. Apr 2014 B2
8715035 Roy et al. May 2014 B2
8734206 Chang et al. May 2014 B2
8734664 Yang et al. May 2014 B2
8784721 Philippi et al. Jul 2014 B2
8801949 Lakrout et al. Aug 2014 B2
8821214 Joseph Sep 2014 B2
8845852 Nakamori et al. Sep 2014 B2
8853082 Hanano et al. Oct 2014 B2
8853527 Hieslmair Oct 2014 B2
8864859 Roy et al. Oct 2014 B2
8883392 Napadensky et al. Nov 2014 B2
8888480 Yoo et al. Nov 2014 B2
8894799 Lakrout Nov 2014 B2
8932116 Deopura et al. Jan 2015 B2
8932511 Napadensky Jan 2015 B2
8968058 Kerprich et al. Mar 2015 B2
8980749 Itai et al. Mar 2015 B1
8986585 Cantrell et al. Mar 2015 B2
8988848 Todorow et al. Mar 2015 B2
9017140 Allison et al. Apr 2015 B2
9033764 Kitamura et al. May 2015 B2
9053908 Sriraman et al. Jun 2015 B2
9067297 Allison et al. Jun 2015 B2
9067298 Lefevre et al. Jun 2015 B2
9067299 Bajaj et al. Jun 2015 B2
9068085 Kim et al. Jun 2015 B2
9089943 Lipson Jul 2015 B2
9108291 Lakrout Aug 2015 B2
9126304 Kimura Sep 2015 B2
9138858 Benvegnu et al. Sep 2015 B2
9152006 Farrand et al. Oct 2015 B2
9152340 Wu et al. Oct 2015 B2
9156124 Allison et al. Oct 2015 B2
9162340 Joseph et al. Oct 2015 B2
9162341 LeFevre et al. Oct 2015 B2
9211628 Allison et al. Dec 2015 B2
9216546 DeSimone et al. Dec 2015 B2
9254545 Park Feb 2016 B2
9259820 Qian et al. Feb 2016 B2
9259821 Qian et al. Feb 2016 B2
9278424 Roy et al. Mar 2016 B2
9296085 Bajaj et al. Mar 2016 B2
9308620 Schutte et al. Apr 2016 B2
9314897 Qian et al. Apr 2016 B2
9333620 Qian et al. May 2016 B2
9352443 Suen et al. May 2016 B2
9375821 Chen et al. Jun 2016 B2
9375822 Hsu et al. Jun 2016 B2
9393740 Okamoto et al. Jul 2016 B2
9421666 Krishnan et al. Aug 2016 B2
9425121 Tsai et al. Aug 2016 B2
9457520 Bajaj et al. Oct 2016 B2
9469800 Jung Oct 2016 B2
9472410 Sadjadi et al. Oct 2016 B2
9481069 Chen et al. Nov 2016 B2
9505952 Reiss et al. Nov 2016 B2
9536711 Dhindsa et al. Jan 2017 B2
9536769 Sadjadi et al. Jan 2017 B1
9583357 Long et al. Feb 2017 B1
9587127 Herlihy et al. Mar 2017 B2
9601319 Bravo et al. Mar 2017 B1
9620376 Kamp et al. Apr 2017 B2
9630249 Toyserkani et al. Apr 2017 B2
9669512 Bajaj et al. Jun 2017 B2
9718129 Ljungblad et al. Aug 2017 B2
9735037 Cox Aug 2017 B2
9744724 Bajaj et al. Aug 2017 B2
9761459 Long et al. Sep 2017 B2
9776361 Krishnan et al. Oct 2017 B2
9805965 Sadjadi et al. Oct 2017 B2
9852889 Kellogg et al. Dec 2017 B1
9868230 Dikovsky et al. Jan 2018 B2
9873180 Bajaj et al. Jan 2018 B2
9881820 Wong et al. Jan 2018 B2
9950405 Deng Apr 2018 B2
9951054 Li et al. Apr 2018 B2
9956314 Skaria et al. May 2018 B2
9993907 Murugesh et al. Jun 2018 B2
10005236 Yudovin-Farber et al. Jun 2018 B2
10016877 Krishnan et al. Jul 2018 B2
10029405 Bajaj et al. Jul 2018 B2
10086500 Orilall et al. Oct 2018 B2
10115568 Kellogg et al. Oct 2018 B2
10220487 Roy et al. Mar 2019 B2
10245704 Eilers et al. Apr 2019 B2
10322491 Orilall et al. Jun 2019 B2
10335994 Napadensky et al. Jul 2019 B2
10347500 Doh et al. Jul 2019 B1
10384330 Bajaj et al. Aug 2019 B2
10391605 Ganapathiappan et al. Aug 2019 B2
10399201 Ganapathiappan et al. Sep 2019 B2
10406599 Ljungblad et al. Sep 2019 B2
10406801 Bell et al. Sep 2019 B2
10456886 Ganapathiappan et al. Oct 2019 B2
10483235 Chiao et al. Nov 2019 B2
10493691 Krishnan et al. Dec 2019 B2
10537974 Bajaj et al. Jan 2020 B2
10580657 Doh et al. Mar 2020 B2
10593574 Fung et al. Mar 2020 B2
10618141 Chockalingam et al. Apr 2020 B2
10675789 Dikovsky et al. Jun 2020 B2
10685862 Rogers Jun 2020 B2
10744714 Lopez et al. Aug 2020 B2
10763081 Cui et al. Sep 2020 B2
10773509 Ng et al. Sep 2020 B2
10821573 Bajaj et al. Nov 2020 B2
10840062 Nguyen et al. Nov 2020 B2
10847347 Noorbakhsh et al. Nov 2020 B2
10875145 Bajaj et al. Dec 2020 B2
10875153 Bajaj et al. Dec 2020 B2
10876073 Ishida Dec 2020 B2
10916408 Dorf et al. Feb 2021 B2
10919123 Hariharan et al. Feb 2021 B2
10923321 Dorf et al. Feb 2021 B2
10953515 Ganapathiappan et al. Mar 2021 B2
20010008830 Tolles et al. Jul 2001 A1
20010019881 Ohmoto et al. Sep 2001 A1
20010020448 Vaartstra et al. Sep 2001 A1
20010029151 Chopra Oct 2001 A1
20010034089 Yamazaki et al. Oct 2001 A1
20010041511 Lack et al. Nov 2001 A1
20010046834 Ramana et al. Nov 2001 A1
20020016139 Hirokawa et al. Feb 2002 A1
20020058396 Roberts et al. May 2002 A1
20020058468 Eppert et al. May 2002 A1
20020069591 Yancey Jun 2002 A1
20020077036 Roberts et al. Jun 2002 A1
20020083577 Suzuki Jul 2002 A1
20020102921 Walker et al. Aug 2002 A1
20020112632 Faibish Aug 2002 A1
20020137450 Osterheld et al. Sep 2002 A1
20020173248 Doan et al. Nov 2002 A1
20030019570 Chen et al. Jan 2003 A1
20030022611 Bartlett et al. Jan 2003 A1
20030056870 Comb et al. Mar 2003 A1
20030113509 Lugg Jun 2003 A1
20030134581 Wang et al. Jul 2003 A1
20030153253 Hanamoto et al. Aug 2003 A1
20030153255 Hasegawa et al. Aug 2003 A1
20030166381 Lee et al. Sep 2003 A1
20030181137 Redeker et al. Sep 2003 A1
20030205325 Boyd et al. Nov 2003 A1
20030220061 Prasad Nov 2003 A1
20040003895 Amano et al. Jan 2004 A1
20040014413 Kawahashi et al. Jan 2004 A1
20040033758 Wiswesser Feb 2004 A1
20040055223 Ono et al. Mar 2004 A1
20040058623 Lin et al. Mar 2004 A1
20040092108 Yajima et al. May 2004 A1
20040106367 Walker et al. Jun 2004 A1
20040126575 Yoshida et al. Jul 2004 A1
20040133298 Toyserkani et al. Jul 2004 A1
20040154533 Agarwal et al. Aug 2004 A1
20040171340 Prasad Sep 2004 A1
20040173946 Pfeifer et al. Sep 2004 A1
20040175451 Maekawa et al. Sep 2004 A1
20040180611 Tajima et al. Sep 2004 A1
20040187714 Napadensky et al. Sep 2004 A1
20040198185 Redeker et al. Oct 2004 A1
20040224616 Shiho et al. Nov 2004 A1
20040266326 Shiho et al. Dec 2004 A1
20050003189 Bredt et al. Jan 2005 A1
20050016868 Basol et al. Jan 2005 A1
20050020082 Vishwanathan et al. Jan 2005 A1
20050032464 Swisher et al. Feb 2005 A1
20050051095 Kikuchi et al. Mar 2005 A1
20050056622 Steger Mar 2005 A1
20050062900 Kim Mar 2005 A1
20050086869 Park et al. Apr 2005 A1
20050098540 Prasad May 2005 A1
20050101228 Prasad May 2005 A1
20050110853 Gardner et al. May 2005 A1
20050112998 Matsuo et al. May 2005 A1
20050124262 Manens Jun 2005 A1
20050153634 Prasad et al. Jul 2005 A1
20050171224 Kulp Aug 2005 A1
20050194681 Hu et al. Sep 2005 A1
20050215177 Prasad Sep 2005 A1
20050227590 Sung Oct 2005 A1
20050250431 Shih et al. Nov 2005 A1
20050260928 Huh et al. Nov 2005 A1
20050260939 Andrews et al. Nov 2005 A1
20050261150 Yonker et al. Nov 2005 A1
20050274627 Wylie et al. Dec 2005 A1
20050276967 Prasad Dec 2005 A1
20050284536 Kojima et al. Dec 2005 A1
20060014475 Sekiya Jan 2006 A1
20060019587 Deopura et al. Jan 2006 A1
20060024434 Wang et al. Feb 2006 A1
20060052040 Prasad Mar 2006 A1
20060079159 Naujok et al. Apr 2006 A1
20060096179 Lu et al. May 2006 A1
20060125133 Huh et al. Jun 2006 A1
20060160478 Donohue et al. Jul 2006 A1
20060185256 Nevoret et al. Aug 2006 A1
20060189269 Roy et al. Aug 2006 A1
20060192315 Farr et al. Aug 2006 A1
20060226567 James et al. Oct 2006 A1
20060249369 Marangon et al. Nov 2006 A1
20060252900 Bowman et al. Nov 2006 A1
20060276109 Roy et al. Dec 2006 A1
20070007698 Sano Jan 2007 A1
20070009606 Serdy et al. Jan 2007 A1
20070032170 Halley et al. Feb 2007 A1
20070037486 Kang et al. Feb 2007 A1
20070054599 Taylor et al. Mar 2007 A1
20070093185 Naik Apr 2007 A1
20070117393 Tregub et al. May 2007 A1
20070128874 Shida et al. Jun 2007 A1
20070128991 Yoon et al. Jun 2007 A1
20070149094 Choi Jun 2007 A1
20070149096 Nishimura et al. Jun 2007 A1
20070204420 Hornby et al. Sep 2007 A1
20070212979 Preston Sep 2007 A1
20070221287 Izumoto Sep 2007 A1
20070235133 Benassi Oct 2007 A1
20070235904 Saikin Oct 2007 A1
20070243795 Kobayashi et al. Oct 2007 A1
20070269987 Nakano et al. Nov 2007 A1
20080004743 Goers et al. Jan 2008 A1
20080009228 Nagase et al. Jan 2008 A1
20080057845 Prasad Mar 2008 A1
20080060734 Stehle Mar 2008 A1
20080105818 Cohen May 2008 A1
20080157436 Patel et al. Jul 2008 A1
20080207100 Roy et al. Aug 2008 A1
20080211141 Deopura et al. Sep 2008 A1
20080220702 Feng et al. Sep 2008 A1
20080255823 Grant Oct 2008 A1
20080268760 Bajaj et al. Oct 2008 A1
20080314878 Cai et al. Dec 2008 A1
20090011679 Bajaj et al. Jan 2009 A1
20090053976 Roy et al. Feb 2009 A1
20090053983 Hosaka Feb 2009 A1
20090071938 Dhindsa et al. Mar 2009 A1
20090081927 Grumbine et al. Mar 2009 A1
20090093201 Kazuno et al. Apr 2009 A1
20090094902 Hou Apr 2009 A1
20090105363 Napadensky Apr 2009 A1
20090130956 Ohta et al. May 2009 A1
20090133716 Lee May 2009 A1
20090137121 Hsu et al. May 2009 A1
20090169455 Van Aert et al. Jul 2009 A1
20090206065 Kruth et al. Aug 2009 A1
20090223810 Dhindsa et al. Sep 2009 A1
20090253353 Ogawa et al. Oct 2009 A1
20090270019 Bajaj Oct 2009 A1
20090308553 Souzy et al. Dec 2009 A1
20090308739 Riker et al. Dec 2009 A1
20090311955 Kerprich et al. Dec 2009 A1
20090318062 Chiu et al. Dec 2009 A1
20090320379 Jun et al. Dec 2009 A1
20090321979 Hiraide Dec 2009 A1
20100007692 Vanmaele et al. Jan 2010 A1
20100009612 Park et al. Jan 2010 A1
20100011672 Kincaid et al. Jan 2010 A1
20100018648 Collins et al. Jan 2010 A1
20100087128 Nakayama et al. Apr 2010 A1
20100112919 Bonner et al. May 2010 A1
20100120249 Hirose et al. May 2010 A1
20100120343 Kato et al. May 2010 A1
20100130112 Bajaj May 2010 A1
20100140850 Napadensky et al. Jun 2010 A1
20100203815 Bajaj Aug 2010 A1
20100210197 Matsumura et al. Aug 2010 A1
20100221489 Lappalainen et al. Sep 2010 A1
20100255254 Culler et al. Oct 2010 A1
20100323050 Kumagai et al. Dec 2010 A1
20100326957 Maeda et al. Dec 2010 A1
20110011217 Kojima Jan 2011 A1
20110011535 Dhindsa et al. Jan 2011 A1
20110014858 Tsai et al. Jan 2011 A1
20110045199 Cong Feb 2011 A1
20110045744 Feng et al. Feb 2011 A1
20110048772 Han Mar 2011 A1
20110059247 Kuzusako et al. Mar 2011 A1
20110077321 Napadensky Mar 2011 A1
20110130077 Litke et al. Jun 2011 A1
20110171890 Nakayama et al. Jul 2011 A1
20110180952 Napadensky Jul 2011 A1
20110183583 Joseph Jul 2011 A1
20110204538 Drury Aug 2011 A1
20110277789 Benson Nov 2011 A1
20110277877 Stehle Nov 2011 A1
20120000887 Eto et al. Jan 2012 A1
20120094487 Kranz et al. Apr 2012 A1
20120178348 Hsu et al. Jul 2012 A1
20120178845 Napadensky et al. Jul 2012 A1
20120281334 Sasaki et al. Nov 2012 A1
20120302148 Bajaj et al. Nov 2012 A1
20120315830 Joseph et al. Dec 2012 A1
20130012108 Li et al. Jan 2013 A1
20130017769 Kimura Jan 2013 A1
20130019570 Weible Jan 2013 A1
20130048018 Wargo et al. Feb 2013 A1
20130052917 Park Feb 2013 A1
20130055568 Dusel et al. Mar 2013 A1
20130059506 Qian et al. Mar 2013 A1
20130059509 Deopura et al. Mar 2013 A1
20130072025 Singh et al. Mar 2013 A1
20130102231 Joseph et al. Apr 2013 A1
20130107415 Banna et al. May 2013 A1
20130122705 Babu et al. May 2013 A1
20130137350 Allison et al. May 2013 A1
20130139851 Sin et al. Jun 2013 A1
20130154175 Todorow et al. Jun 2013 A1
20130172509 Pawloski et al. Jul 2013 A1
20130183824 Kwon et al. Jul 2013 A1
20130200494 Chen et al. Aug 2013 A1
20130203258 Chen et al. Aug 2013 A1
20130212951 Ahn et al. Aug 2013 A1
20130231032 Swedek et al. Sep 2013 A1
20130247477 Cantrell et al. Sep 2013 A1
20130283700 Bajaj Oct 2013 A1
20130287980 Burdzy et al. Oct 2013 A1
20130288483 Sadjadi et al. Oct 2013 A1
20130307194 Elsey Nov 2013 A1
20130309951 Benvegnu et al. Nov 2013 A1
20130316081 Kovalcik et al. Nov 2013 A1
20130327977 Singh et al. Dec 2013 A1
20130328228 Pettis et al. Dec 2013 A1
20140024216 Stender et al. Jan 2014 A1
20140034229 Xu Feb 2014 A1
20140034239 Yang et al. Feb 2014 A1
20140048970 Batchelder et al. Feb 2014 A1
20140065932 Kazuno et al. Mar 2014 A1
20140069584 Yang et al. Mar 2014 A1
20140109784 Daems et al. Apr 2014 A1
20140117575 Kemperle et al. May 2014 A1
20140127973 Motoshima et al. May 2014 A1
20140138355 Yavelberg May 2014 A1
20140163717 Das et al. Jun 2014 A1
20140206268 Lefevre et al. Jul 2014 A1
20140230170 Patel Aug 2014 A1
20140239527 Lee Aug 2014 A1
20140324206 Napadensky Oct 2014 A1
20140364044 Ahn et al. Dec 2014 A1
20140370214 Araki et al. Dec 2014 A1
20140370788 Nair Dec 2014 A1
20150024233 Gunther Jan 2015 A1
20150031781 Landers et al. Jan 2015 A1
20150037601 Blackmore Feb 2015 A1
20150038066 Huang et al. Feb 2015 A1
20150043122 Eto et al. Feb 2015 A1
20150044951 Bajaj et al. Feb 2015 A1
20150045928 Perez et al. Feb 2015 A1
20150056421 Yudovin-Farber et al. Feb 2015 A1
20150056892 Vacassy et al. Feb 2015 A1
20150056895 Fotou et al. Feb 2015 A1
20150061170 Engel et al. Mar 2015 A1
20150065020 Roy et al. Mar 2015 A1
20150072522 Jung Mar 2015 A1
20150084238 Bonassar et al. Mar 2015 A1
20150089881 Stevenson et al. Apr 2015 A1
20150093977 Deopura et al. Apr 2015 A1
20150114823 Lee et al. Apr 2015 A1
20150115490 Reinarz Apr 2015 A1
20150123298 Napadensky May 2015 A1
20150126099 Krishnan et al. May 2015 A1
20150129798 Napadensky May 2015 A1
20150159046 Dinega et al. Jun 2015 A1
20150174826 Murugesh et al. Jun 2015 A1
20150216790 Feng et al. Aug 2015 A1
20150221520 Singh et al. Aug 2015 A1
20150252202 Nerad Sep 2015 A1
20150375361 Qian et al. Dec 2015 A1
20160052103 Qian et al. Feb 2016 A1
20160068996 Lau et al. Mar 2016 A1
20160073496 Vincent Mar 2016 A1
20160101500 Fung et al. Apr 2016 A1
20160107287 Bajaj et al. Apr 2016 A1
20160107288 Orilall et al. Apr 2016 A1
20160107290 Bajaj et al. Apr 2016 A1
20160107295 Bajaj et al. Apr 2016 A1
20160107381 Krishnan et al. Apr 2016 A1
20160114458 Bajaj et al. Apr 2016 A1
20160136787 Bajaj et al. May 2016 A1
20160176021 Orilall et al. Jun 2016 A1
20160198528 Kitagawa Jul 2016 A1
20160221145 Huang et al. Aug 2016 A1
20160229023 Lugg et al. Aug 2016 A1
20160236279 Ashton et al. Aug 2016 A1
20160252813 Kitson Sep 2016 A1
20160257856 Reiss et al. Sep 2016 A1
20160271869 Van De Vrie et al. Sep 2016 A1
20160279757 Qian et al. Sep 2016 A1
20160322242 Nguyen et al. Nov 2016 A1
20160329244 Chiao et al. Nov 2016 A1
20160346997 Lewis et al. Dec 2016 A1
20160347002 Bajaj et al. Dec 2016 A1
20160354901 Krishnan et al. Dec 2016 A1
20160375546 Pai et al. Dec 2016 A1
20170018411 Sriraman et al. Jan 2017 A1
20170036320 Prasad Feb 2017 A1
20170069462 Kanarik et al. Mar 2017 A1
20170072466 Zehavi et al. Mar 2017 A1
20170100817 Ganapathiappan et al. Apr 2017 A1
20170110335 Yang et al. Apr 2017 A1
20170113355 Genetti et al. Apr 2017 A1
20170115657 Trussell et al. Apr 2017 A1
20170117172 Genetti et al. Apr 2017 A1
20170120416 Chockalingam et al. May 2017 A1
20170133252 Fung et al. May 2017 A1
20170136603 Ganapathiappan et al. May 2017 A1
20170148539 Prestayko et al. May 2017 A1
20170151648 Huang et al. Jun 2017 A1
20170173865 Dikovsky et al. Jun 2017 A1
20170178917 Kamp et al. Jun 2017 A1
20170182629 Lehuu et al. Jun 2017 A1
20170203406 Ganapathiappan et al. Jul 2017 A1
20170203408 Ganapathiappan et al. Jul 2017 A1
20170203409 Lefevre et al. Jul 2017 A1
20170213753 Rogers Jul 2017 A1
20170236688 Caron et al. Aug 2017 A1
20170236741 Angelov et al. Aug 2017 A1
20170236743 Severson et al. Aug 2017 A1
20170239886 Norikane Aug 2017 A1
20170250056 Boswell et al. Aug 2017 A1
20170259396 Yamamura et al. Sep 2017 A1
20170259499 Ng et al. Sep 2017 A1
20170263478 McChesney et al. Sep 2017 A1
20170274498 Oh et al. Sep 2017 A1
20170316935 Tan et al. Nov 2017 A1
20170330734 Lee et al. Nov 2017 A1
20170330786 Genetti et al. Nov 2017 A1
20170334074 Genetti et al. Nov 2017 A1
20170338140 Pape Nov 2017 A1
20170372912 Long et al. Dec 2017 A1
20180025891 Marakhtanov et al. Jan 2018 A1
20180043613 Krishnan et al. Feb 2018 A1
20180100073 Chopra et al. Apr 2018 A1
20180100074 Chopra et al. Apr 2018 A1
20180100075 Chopra et al. Apr 2018 A1
20180158707 Hunter et al. Jun 2018 A1
20180161954 Bajaj et al. Jun 2018 A1
20180229343 Kim et al. Aug 2018 A1
20180236632 Murugesh et al. Aug 2018 A1
20180323042 Wang et al. Nov 2018 A1
20180339397 Redfield Nov 2018 A1
20180339402 Redfield et al. Nov 2018 A1
20180339447 Redfield Nov 2018 A1
20180340104 Hampson et al. Nov 2018 A1
20180366305 Nagami et al. Dec 2018 A1
20180371276 Miyano Dec 2018 A1
20190030678 Kumar et al. Jan 2019 A1
20190039204 Chockalingam et al. Feb 2019 A1
20190047112 Fu et al. Feb 2019 A1
20190198298 Hirose et al. Jun 2019 A1
20190202024 Ganapathiappan et al. Jul 2019 A1
20190218697 Nakayama et al. Jul 2019 A1
20190224809 Ganapathiappan et al. Jul 2019 A1
20190228952 Dorf et al. Jul 2019 A1
20190299357 Orilall et al. Oct 2019 A1
20190299537 McClintock et al. Oct 2019 A1
20190322031 Kritchman Oct 2019 A1
20190337117 Ganapathiappan et al. Nov 2019 A1
20200001433 Bajaj et al. Jan 2020 A1
20200055161 Chockalingham et al. Feb 2020 A1
20200070302 Ganapathiappan et al. Mar 2020 A1
20200101657 Krishnan et al. Apr 2020 A1
20200135517 Fung et al. Apr 2020 A1
20200147750 Bajaj et al. May 2020 A1
20200156311 Rolland et al. May 2020 A1
20200161098 Cui et al. May 2020 A1
20200230781 Chockalingam et al. Jul 2020 A1
20200299834 Bajaj et al. Sep 2020 A1
20200325353 Sridhar et al. Oct 2020 A1
20210013014 Sarode Vishwanath Jan 2021 A1
20210039167 Ashton et al. Feb 2021 A1
20210107116 Bajaj et al. Apr 2021 A1
20210187822 Yudovin-Farber et al. Jun 2021 A1
20210220857 Baker et al. Jul 2021 A1
Foreign Referenced Citations (101)
Number Date Country
1441017 Sep 2003 CN
1445060 Oct 2003 CN
1851896 Oct 2006 CN
1897226 Jan 2007 CN
101142055 Mar 2008 CN
101428404 May 2009 CN
101479075 Jul 2009 CN
101612722 Dec 2009 CN
201483382 May 2010 CN
102133734 Jul 2011 CN
101642898 Sep 2011 CN
102224768 Oct 2011 CN
202825512 Mar 2013 CN
203542340 Apr 2014 CN
103465155 May 2016 CN
105917448 Aug 2016 CN
104029115 Mar 2017 CN
1400636 Mar 2023 CN
19834559 Feb 2000 DE
1078717 Jul 2003 EP
1419876 Apr 2008 EP
2431157 Mar 2012 EP
2362592 Nov 2001 GB
H07102724 Nov 1995 JP
H08132342 May 1996 JP
H11254542 Sep 1999 JP
H11347761 Dec 1999 JP
2000061817 Feb 2000 JP
2001018163 Jan 2001 JP
200228849 Jan 2002 JP
2002151447 May 2002 JP
3324643 Sep 2002 JP
2003303793 Oct 2003 JP
2004235446 Aug 2004 JP
3566430 Sep 2004 JP
2004243518 Sep 2004 JP
2004281685 Oct 2004 JP
2005074614 Mar 2005 JP
3641956 Apr 2005 JP
2005-294661 Oct 2005 JP
3801100 Jul 2006 JP
2006231464 Sep 2006 JP
2006305650 Nov 2006 JP
2007-005612 Jan 2007 JP
2007-235001 Sep 2007 JP
4077192 Apr 2008 JP
2009-542449 Dec 2009 JP
4512529 Jul 2010 JP
4693024 Jun 2011 JP
4798713 Oct 2011 JP
2013-018056 Jan 2013 JP
5143528 Feb 2013 JP
5226359 Jul 2013 JP
5248152 Jul 2013 JP
5697889 Apr 2015 JP
2015164129 Sep 2015 JP
2015-174272 Oct 2015 JP
2016023209 Feb 2016 JP
5994183 Sep 2016 JP
2017078123 Apr 2017 JP
2017533585 Nov 2017 JP
6422325 Nov 2018 JP
2018533487 Nov 2018 JP
6584895 Oct 2019 JP
10-2000-0075987 Dec 2000 KR
2003-0020658 Mar 2003 KR
10-2008-0087012 Sep 2008 KR
10-2009-0024733 Mar 2009 KR
20100028294 Mar 2010 KR
20150122806 Nov 2015 KR
20160064377 Jun 2016 KR
10-2020-0140931 Dec 2020 KR
365561 Aug 1999 TW
480205 Mar 2002 TW
481855 Apr 2002 TW
I222390 Oct 2004 TW
I279287 Apr 2007 TW
I287481 Oct 2007 TW
I388398 Mar 2013 TW
I432540 Apr 2014 TW
I462797 Dec 2014 TW
201510203 Mar 2015 TW
201527040 Jul 2015 TW
0238688 Oct 2002 WO
03103959 Dec 2003 WO
2006003697 Jan 2006 WO
2007086529 Aug 2007 WO
2009158665 Dec 2009 WO
2011088057 Jul 2011 WO
2012173885 May 2013 WO
2013162856 Oct 2013 WO
2014039378 Mar 2014 WO
2015111366 Jul 2015 WO
2015120430 Aug 2015 WO
2016011586 Jan 2016 WO
2016060857 Apr 2016 WO
2016151586 Sep 2016 WO
2017066077 Apr 2017 WO
2017074773 May 2017 WO
2020-153979 Jul 2020 WO
2020-209965 Oct 2020 WO
Non-Patent Literature Citations (75)
Entry
Japanese Office Action dated Sep. 13, 2022 for Application No. 2021-142999.
Communication pursuant to Article 94(3) EPC for European Application No. 15850855.6 dated Sep. 22, 2021.
Office Action for Chinese Application No. 201880051442.5 dated Nov. 2, 2021.
Office Action for Korean Application No. 10-2017-7013087 dated Oct. 28, 2021.
Europe Search Report for Application No. 19800510.0 dated Jan. 14, 2022.
Nazbel: “Methacryloyloxyethyl Trimethylammonium Chloride Product Specification”, Sep. 21, 2017 (Sep. 21, 2017), XP055875758, Retrieved from the Internet: NRL:https://www.sigmaaldrich.com/specification-sheets/320/565/408107-BULK.
Japanese Office Action issued to Patent Application No. 2020-562763 dated Feb. 8, 2022.
Duplicate European Search Report issued to Application No. 19800510.0 dated Jan. 14, 2022.
International Search Report dated Apr. 20, 2022 for Application No. PCT/US2022/013292.
International Search Report dated Apr. 28, 2022 for Application No. PCT/US2022/013403.
Japanese Office Action issued to Application No. 2021-512234 dated May 31, 2022.
Taiwan Office Action issued to application No. 107125822 dated Jun. 16, 2022.
Chinese Office Action issued to Application No. 201880051442.5 dated Apr. 26, 2022.
Chinese Office Action dated Jul. 14, 2021 for Application No. 201880050338.4.
Taiwan Office Action dated Jul. 12, 2022 for Application No. 107126836.
Office Action for Taiwanese Patent Application No. 108111915 dated Jan. 14, 2022.
European Extended Search Report for EP 19911608.8 dated Mar. 1, 2022.
Office Action for Korean Application No. 10-2018-7015966 dated Jun. 26, 2023.
Office Action for Korean Application No. 10-2018-7015966 dated Dec. 19, 2022.
Chinese Office Action dated Jul. 27, 2022 for Application No. 201680070545.7.
Wikipedia [online]; 3D Printing; 2013; 17 total pages.
3D Printing: The Next Industrial Revolution: Christopher Barnatt Publisher: CreateSpace Independent Publishing Platform (May 4, 2013) Language: English, ISBN-10: 148418176X ISBN-13: 978-1484181768.
C. Wong. “Damping Associated with Incipient Melting in Aluminum-Indium Alloys”, David Taylor Research Center—SME 89-99. Jan. 1990.
Tammy Hickey et al. “Internal Friction and Modules Studies on Austempered Ductile Iron”, Technical Report ARCCB-TR-98001. Jan. 1996. 24 pages.
Rodel. Rodel IC1000 CMP Pad. 1999. 2 pages.
Byoung-Ho Kwon et al. “Dishing and Erosion in STI CMP”. System IC R&D Center, Hyundai Electronics Industries Co. Ltd. 1999 IEEE. 3 pages.
S. Raghavan et al. “Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing”. vol. 98-7. 1998. 19 pages.
Rajeev Bajaj et al. “Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (CMP) Processes”. 1994. 8 pages.
Rodel. Rodel IC1010. 1998. 2 pages.
Peter Freeman et al. “A Study of the Variation of Physical Properties in Random Lots of Urethane Polishing Pads for CMP”. A Rodel Publication. vol. 2, Issue 6. Jun. 1996. 8 Pages.
John J. Aklonis et al. “Introduction to Polymer Viscoelasticity”. Second Edition. 1983. 6 pages.
Weidan Li et al. “The Effect of the Polishing Pad Treatments on the Chemical-Mechanical Polishing of SiO2 Films”, Thin Solid Films 270 (1995). 6 pages.
Van Den Berg, Antje M.J. “Inkjet Printing of Polyurethane Colloidal Suspensions”, www.rsc.org/softmatter. Jul. 13, 2006.
Yu-Lim Jun et al. “Slicing Bitmap Generation and Patterning Technique a SFF System Using UV-Resin”, International Conference on Control, Automation and Systems 2007. 5 Pages.
H. Yang. “High Viscosity Jetting System for 3D Reactive Inkjet Printing”, Additive Manufacturing and 3D Printing Group, University of Nottingham. 9 pages.
I Hermant et al. “A Comparative Study of Polyurethane-Poly(Methyl Methacrylate) Interpenetrating and Semi-1 Interprenetrating Polymer Networks”, vol. 20, No. 1. pp. 85-89, 1984.
Lee M. Cook. “CMP Consumables II: Pad” Chapter 6. Semiconductors and Semimetals, vol. 63. Published 1999. Chemical Mechanical Polishing in Silicon Processing. ISBN: 978-0-12-752172-5.
Peter Krober et al. “Reactive Inkjet Printing of Polyurethanes”, www.rsc.org/materials. Journal of Materials Chemistry. Jan. 6, 2009.
Plastics in Action; 3-D Printing Speeds Prototype Development dated May/Jun. 1998; 2 total pages.
The Dow Chemical Company—“Specialty Elastomers for Automotive TPO Compounds” brochure, Nov. 2006, 8 pages.
The Dow Chemical Company—“Dow VLDPE DFDB-1085 NT, Very Low Density Polyethylene Resin” Technical Data, UL Prospector, Oct. 2003, 2 pages.
Lubrizol Advanced Materials, Inc.—“Lubrizol Engineered Polymers, Estane 58144 TPU” Technical Data, Feb. 2014, 2 pages.
Sekisui Voltek, LLC—“Volara Type EO” Technical Data, Jan. 2010, 2 pages.
Rogers Corporation, High Performance Foams Division, Poron Microcellular Urethanes—Product Availability Booklet, May 1, 2015, 11 pages.
Andrews, Rodney J., et al.—“Glass Transition Temperatures of Polymers,” Polymer Handbook, Fourth Edition, J. Brandrup et al., Editors, A Wiley Interscience Publication, John Wiley & Sons, Inc., 1999, VI / 193-198.
Crow—“Glass Transition Temperature,” webpage, Polymer Properties Database, http://polymerdatabase.com/polymer%20physics/GlassTransition.html, 2015, printed Apr. 10, 2019, 2 pages.
Crow—“Glass Transition Temperatures,” webpage, Polymer Properties Database, http://polymerdatabase.com/polymer%20physics/Polymer%20Tg%20C.html, 2015, printed Apr. 10, 2019, 6 pages.
HUPC—“Dipropylene Glycol Diacrylate (DPGDA)” webpage, CAS No. 57472-68-1_Radiation, http://www.union-pigment.com/china/radiation-curable-57472.html, printed Apr. 8, 2019, 2 pages.
Polysciences, Inc.—“Monomers Product Guide,” 2012, 16 pages.
Whisnaut, David—“Polymer Chemistry: The Glass Transition” webpage, Engineering Libre Texts, https://eng.libretexts.org/Bookshelves/Materials_Schience?Supplemental_Modules_Materia . . . , printed Apr. 10, 2019, 2 pages.
Sigma-Aldrich—“Thermal Transitions of Homopolymers: Glass Transition & Melting Point” webpage, https://www.sigmaaldrich.com/technical-documents/articles/materials-science/polymer-scie . . . , printed Apr. 8, 2019, 3 pages.
Moylan, John—“Considerations for Measuring Glass Transition Temperature,” webpage on Element Materials Technology's website, https://www.element.com/nucleus/2017/08/15/18/45/considerations-for-measuring-glass-transition-temperature, Feb. 19, 2019, 8 pages.
ASTM International—“Standard Test Method for Assignment of the Glass Transition Temperature by Dynamic Mechanical Analysis,” standard issued under Designation E1640, current edition approved Aug. 1, 2013, 6 pages.
Wikipedia—“Contact angle” webpage, https://en.wikipedia.org/wiki/Contact_angle, last edited Dec. 14, 2019, 9 pages.
ASTM International—“Standard Terminology for Additive Manufacturing Technologies,” ASTM Designation: F2792-12a, copyright dated Sep. 9, 2013, pp. 1-3.
Merriam-Webster Dictionary—“Droplet,” https://www.merriam-webster.com/dictionary/droplet, accessed Feb. 24, 2020, 8 pages.
Shahrubudin, N., et al.—“An Overview on 3D Printing Technology: Technological, Materials, and Applications,” 2nd International Conference on Sustainable Materials Processing and Manufacturing (SMPM 2019), Procedia Manufacturing, 35 (2019), published by Elsevier B.V., pp. 1286-1296.
Wikipedia—“Drop (liquid),” https://en.wikipedia.org/wiki/Drop_(liquid), last edited Feb. 12, 2020, accessed Feb. 24, 2020, 5 pages.
Wikipedia—“Cross-link” webpage at <https://en.wikipedia.org/wiki/Cross-link>, printed Mar. 8, 2019, 8 pages.
J.-G. Park, et al., Post-CMP Cleaning: Interaction between Particles and Surfaces, International Conference on Planarization/CMP Technology, Oct. 25-27, 2007, VDE Verlag CMBH, Berlin-Offenbach, 6 pp.
Pan, GuoShun et al.—“Preparation of silane modified SiO2 abrasive particles and their Chemical Mechanical Polishing (CMP) performances,” Wear 273 (2011), pp. 100-104.
Epoxy Technology Inc.—“Tech Tip 23: Tg-Glass Transition Temperature for Epoxies” brochure, date unknown, 2 pages.
Rao, Sunil M., The Effectiveness of Silane and Siloxane Treatments on the Superhydrophobicity and Icephobicity of Concrete Surfaces, Rao, PhD Thesis, 1-118.
A Breakthrough Method for the Effective Conditioning of PVA Brush Used for Post-CMP Process, Lee et al., ECS Journal of Solid State Science and Technology 8, p. 307-p. 312 (2019), Published Jun. 5, 2019, 6 pages.
Influence of post-CMP cleaning on Cu interconnects and TDDB reliability, Noguchi et al., IEEE Transactions on Electron Devices 52, 934-941 (2005), Published Apr. 25, 2005, 8 pages.
Arkema, “Liquid Resins for UV Curling”, N3XTDIMENSION. Sartomer's Custom Liquid Resin Systems. 3D-arkema.com.
GPS Safety Summary, “Tripropyleneglycol diacrylate”, (TPGDA-SR 306)—Mar. 11, 2013.
Shyam Dev Maurya et al. “A Review on Acrylate-Terminated Urethane Oligomers and Polymers: Synthesis and Applications”, Polymer-Plastics Technology and Engineering. ISSN:0360-2559 (Print) 1525-6111 (Online) Journal homepage: https://www.tandfonline.com/loi/lpte20.
UV/EB Curable Resins. Product Guide—Americas. www.allnex.com.
International Search Report and Written Opinion for International Application No. PCT/US2016/053970 dated Jan. 11, 2017.
TW Office Action dated Oct. 4, 2019 for Application No. 105133977.
TW Search Report dated Oct. 21, 2019 for Application No. TW105133977.
JP Office Action dated Dec. 15, 2020 for Application No. 2018-522976.
TW Office Action dated Mar. 2, 2021 for Application No. 109117279.
Office Action for Korean Application No. 10-2018-7015966 dated Dec. 22, 23.
Related Publications (1)
Number Date Country
20200135517 A1 Apr 2020 US
Divisions (1)
Number Date Country
Parent 14935134 Nov 2015 US
Child 16731492 US