Basab Bandyopadhyay

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming source/drain regions in a semiconductor device
- Patent number 6,720,227
- Issue date Apr 13, 2004
- Advanced Micro Devices, Inc.
- Daniel Kadosh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with ion implantation
- Patent number 6,599,810
- Issue date Jul 29, 2003
- Advanced Micro Devices, Inc.
- Nick Kepler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with two source/drain masks and...
- Patent number 6,380,047
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric having an air gap formed between closely spaced intercon...
- Patent number 6,376,330
- Issue date Apr 23, 2002
- Advanced Micro Devices, Inc.
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor isolation region bounded by a trench and covered with...
- Patent number 6,353,253
- Issue date Mar 5, 2002
- Advanced Micro Devices, Inc.
- Fred N. Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substantially planar semiconductor topography using dielectrics and...
- Patent number 6,326,298
- Issue date Dec 4, 2001
- Advanced Micro Devices Inc.
- Robert Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with improved isolat...
- Patent number 6,309,947
- Issue date Oct 30, 2001
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlevel dielectric with air gaps to lessen capacitive coupling
- Patent number 6,208,015
- Issue date Mar 27, 2001
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation without planarization mask
- Patent number 6,171,962
- Issue date Jan 9, 2001
- Advanced Micro Devices, Inc.
- Olov Karlsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor topography employing a shallow trench isolation struc...
- Patent number 6,165,906
- Issue date Dec 26, 2000
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for generating limited isolation trench width structures and...
- Patent number 6,162,699
- Issue date Dec 19, 2000
- Advanced Micro Devices, Inc.
- Larry Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having interconnect lines separated by a dielect...
- Patent number 6,153,833
- Issue date Nov 28, 2000
- Advanced Micro Devices, Inc.
- Robert Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit which uses a damascene process for producing sta...
- Patent number 6,150,721
- Issue date Nov 21, 2000
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with spacer-assisted ion implant...
- Patent number 6,143,624
- Issue date Nov 7, 2000
- Advanced Micro Devices, Inc.
- Nick Kepler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation with spacers for improved gate oxide quality
- Patent number 6,130,467
- Issue date Oct 10, 2000
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having conductors of enhanced cross-sectional area
- Patent number 6,127,264
- Issue date Oct 3, 2000
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subfield conductive layer and method of manufacture
- Patent number 6,127,719
- Issue date Oct 3, 2000
- Advanced Micro Devices, Inc.
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with simplified reverse planariz...
- Patent number 6,124,183
- Issue date Sep 26, 2000
- Advanced Micro Devices, Inc.
- Olov Karlsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit having conductors of enhanc...
- Patent number 6,090,703
- Issue date Jul 18, 2000
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dissolvable dielectric method and structure
- Patent number 6,091,149
- Issue date Jul 18, 2000
- Advanced Micro Devices, Inc.
- Fred N. Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with no polish stop
- Patent number 6,090,712
- Issue date Jul 18, 2000
- Advanced Micro Devices, Inc.
- Christopher F. Lyons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with trench wall spacer
- Patent number 6,074,927
- Issue date Jun 13, 2000
- Advanced Micro Devices, Inc.
- Nick Kepler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask generation technique for producing an integrated circuit with...
- Patent number 6,049,134
- Issue date Apr 11, 2000
- Advanced Micro Devices, Inc.
- Mark W. Michael
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepper alignment mark structure for maintaining alignment integrity
- Patent number 6,037,671
- Issue date Mar 14, 2000
- Advanced Micro Devices, Inc.
- Nick Kepler
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Integrated circuit which uses a recessed local conductor for produc...
- Patent number 6,031,289
- Issue date Feb 29, 2000
- Advanced Micro Devices, Inc.
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel interconnect structure of an integrated circuit having a...
- Patent number 5,998,293
- Issue date Dec 7, 1999
- Advanced Micro Devcies, Inc.
- Robert Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of planarizing a semiconductor topography using multiple pol...
- Patent number 5,968,843
- Issue date Oct 19, 1999
- Advanced Micro Devices, Inc.
- Robert Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified shallow trench isolation formation with no polish stop
- Patent number 5,970,362
- Issue date Oct 19, 1999
- Advanced Micro Devices, Inc.
- Christopher F. Lyons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with improved trench edge oxide
- Patent number 5,970,363
- Issue date Oct 19, 1999
- Advanced Micro Devices, Inc.
- Nick Kepler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dissolvable dielectric method
- Patent number 5,953,626
- Issue date Sep 14, 1999
- Advanced Micro Devices, Inc.
- Fred N. Hause
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR ISOLATION REGION BOUNDED BY A TRENCH AND COVERED WITH...
- Publication number 20010020727
- Publication date Sep 13, 2001
- FRED N. HAUSE
- H01 - BASIC ELECTRIC ELEMENTS

Basab Bandyopadhyay

Person

Patents Grantslast 30 patents

Method of forming source/drain regions in a semiconductor device

Shallow trench isolation formation with ion implantation

Shallow trench isolation formation with two source/drain masks and...

Dielectric having an air gap formed between closely spaced intercon...

Semiconductor isolation region bounded by a trench and covered with...

Substantially planar semiconductor topography using dielectrics and...

Method of manufacturing a semiconductor device with improved isolat...

Interlevel dielectric with air gaps to lessen capacitive coupling

Shallow trench isolation formation without planarization mask

Semiconductor topography employing a shallow trench isolation struc...

Method for generating limited isolation trench width structures and...

Integrated circuit having interconnect lines separated by a dielect...

Integrated circuit which uses a damascene process for producing sta...

Shallow trench isolation formation with spacer-assisted ion implant...

Shallow trench isolation with spacers for improved gate oxide quality

Integrated circuit having conductors of enhanced cross-sectional area

Subfield conductive layer and method of manufacture

Shallow trench isolation formation with simplified reverse planariz...

Method of forming an integrated circuit having conductors of enhanc...

Dissolvable dielectric method and structure

Shallow trench isolation formation with no polish stop

Shallow trench isolation formation with trench wall spacer

Mask generation technique for producing an integrated circuit with...

Stepper alignment mark structure for maintaining alignment integrity

Integrated circuit which uses a recessed local conductor for produc...

Multilevel interconnect structure of an integrated circuit having a...

Method of planarizing a semiconductor topography using multiple pol...

Simplified shallow trench isolation formation with no polish stop

Shallow trench isolation formation with improved trench edge oxide

Dissolvable dielectric method

Patents Applicationslast 30 patents

SEMICONDUCTOR ISOLATION REGION BOUNDED BY A TRENCH AND COVERED WITH...