Deva N. Pattanayak

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 10,546,750
- Issue date Jan 28, 2020
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods of fabricating dual gate devices
- Patent number 10,453,953
- Issue date Oct 22, 2019
- Vishay-Siliconix
- Kyle Terrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for super-junction MOSFETs
- Patent number 10,340,377
- Issue date Jul 2, 2019
- Vishay-Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulated super junction power MOSFET devices
- Patent number 10,283,587
- Issue date May 7, 2019
- Vishay-Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive charge balanced edge termination
- Patent number 10,229,988
- Issue date Mar 12, 2019
- Vishay-Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 10,032,901
- Issue date Jul 24, 2018
- Vishay-Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field boosted metal-oxide-semiconductor field effect transistor
- Patent number 10,026,835
- Issue date Jul 17, 2018
- Vishay-Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulated super junction power MOSFET devices
- Patent number 9,887,259
- Issue date Feb 6, 2018
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for super-junction MOSFETs
- Patent number 9,882,044
- Issue date Jan 30, 2018
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive charge balanced MOSFET techniques
- Patent number 9,853,140
- Issue date Dec 26, 2017
- Vishay Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive charge balanced edge termination
- Patent number 9,842,911
- Issue date Dec 12, 2017
- Vishay Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a short channel trench MOSFET and device formed...
- Patent number 9,831,336
- Issue date Nov 28, 2017
- Vishay Siliconix
- Zachary Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods of fabricating dual gate devices
- Patent number 9,577,089
- Issue date Feb 21, 2017
- Vishay Siliconix
- Kyle Terrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processes used in fabricating a metal-insulator-semiconductor field...
- Patent number 9,508,596
- Issue date Nov 29, 2016
- Vishay Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET device fabrication
- Patent number 9,443,974
- Issue date Sep 13, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility power metal-oxide semiconductor field-effect transistors
- Patent number 9,437,424
- Issue date Sep 6, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 9,431,550
- Issue date Aug 30, 2016
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for super junction MOSFET devices
- Patent number 9,431,249
- Issue date Aug 30, 2016
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility power metal-oxide semiconductor field-effect transistors
- Patent number 9,425,043
- Issue date Aug 23, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET devices
- Patent number 9,425,306
- Issue date Aug 23, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 9,306,056
- Issue date Apr 5, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 9,230,810
- Issue date Jan 5, 2016
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a short channel trench MOSFET and device formed...
- Patent number 8,883,595
- Issue date Nov 11, 2014
- Vishay Siliconix
- Zachary Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor with recessed trench material and...
- Patent number 8,883,580
- Issue date Nov 11, 2014
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-low drain-source resistance power MOSFET
- Patent number 8,409,954
- Issue date Apr 2, 2013
- Vishay-Silconix
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor with recessed trench material and...
- Patent number 8,368,126
- Issue date Feb 5, 2013
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked trench metal-oxide-semiconductor field effect transistor de...
- Patent number 8,183,629
- Issue date May 22, 2012
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 8,072,013
- Issue date Dec 6, 2011
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a closed cell trench MOSFET
- Patent number 7,833,863
- Issue date Nov 16, 2010
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super trench MOSFET including buried source e...
- Patent number 7,704,836
- Issue date Apr 27, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MODULATED SUPER JUNCTION POWER MOSFET DEVICES
- Publication number 20180240869
- Publication date Aug 23, 2018
- VISHAY-SILICONIX
- Deva PATTANAYAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADAPTIVE CHARGE BALANCED EDGE TERMINATION
- Publication number 20180114852
- Publication date Apr 26, 2018
- VISHAY-SILICONIX
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR SUPER-JUNCTION MOSFETS
- Publication number 20170250247
- Publication date Aug 31, 2017
- VISHAY-SILICONIX
- Deva PATTANAYAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPOSITE TRENCH AND IMPLANT COLUMNS
- Publication number 20170222022
- Publication date Aug 3, 2017
- VISHAY-SILICONIX
- Deva PATTANAYAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES
- Publication number 20170104096
- Publication date Apr 13, 2017
- VISHAY-SILICONIX
- Kyle Terrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20170025527
- Publication date Jan 26, 2017
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20160225622
- Publication date Aug 4, 2016
- VISHAY-SILICONIX
- Hamilton LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR SUPER-JUNCTION MOSFETS
- Publication number 20160056281
- Publication date Feb 25, 2016
- VISHAY-SILICONIX
- Deva PATTANAYAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATED SUPER JUNCTION POWER MOSFET DEVICES
- Publication number 20150372078
- Publication date Dec 24, 2015
- VISHAY-SILICONIX
- Deva PATTANAYAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPOSITE TRENCH AND IMPLANT COLUMNS
- Publication number 20150372132
- Publication date Dec 24, 2015
- VISHAY-SILICONIX
- Deva PATTANAYAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSES USED IN FABRICATING A METAL-INSULATOR-SEMICONDUCTOR FIELD...
- Publication number 20150372077
- Publication date Dec 24, 2015
- VISHAY-SILICONIX
- Naveen TIPIRNENI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING A SHORT CHANNEL TRENCH MOSFET AND DEVICE FORMED...
- Publication number 20150061000
- Publication date Mar 5, 2015
- VISHAY-SILICONIX
- Zachary Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...
- Publication number 20140235023
- Publication date Aug 21, 2014
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adaptive Charge Balanced MOSFET Techniques
- Publication number 20140183624
- Publication date Jul 3, 2014
- VISHAY-SILICONIX
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADAPTIVE CHARGE BALANCED EDGE TERMINATION
- Publication number 20130320462
- Publication date Dec 5, 2013
- VISHAY-SILICONIX
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR SUPER JUNCTION MOSFET DEVICES
- Publication number 20130140633
- Publication date Jun 6, 2013
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POLYSILICON DIODE
- Publication number 20120068178
- Publication date Mar 22, 2012
- VISHAY-SILICONIX
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES
- Publication number 20110254084
- Publication date Oct 20, 2011
- VISHAY-SILICONIX
- Kyle Terrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20110101525
- Publication date May 5, 2011
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Boosted Metal-Oxide-Semiconductor Field Effect Transistor
- Publication number 20110095359
- Publication date Apr 28, 2011
- VISHAY-SILICONIX
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20110049682
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICES
- Publication number 20110049614
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION
- Publication number 20110053326
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER GTO-BASED POWER BLOCKS
- Publication number 20100200893
- Publication date Aug 12, 2010
- Vic TEMPLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20100019316
- Publication date Jan 28, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor De...
- Publication number 20090050960
- Publication date Feb 26, 2009
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...
- Publication number 20080258212
- Publication date Oct 23, 2008
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY POWER METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
- Publication number 20080220571
- Publication date Sep 11, 2008
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20080182376
- Publication date Jul 31, 2008
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-low drain-source resistance power MOSFET
- Publication number 20080157281
- Publication date Jul 3, 2008
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS

Deva N. Pattanayak

Person

Patents Grantslast 30 patents

System and method for substrate wafer back side and edge cross sect...

Structures and methods of fabricating dual gate devices

Edge termination for super-junction MOSFETs

Modulated super junction power MOSFET devices

Adaptive charge balanced edge termination

Semiconductor device with trench-like feed-throughs

Field boosted metal-oxide-semiconductor field effect transistor

Modulated super junction power MOSFET devices

Edge termination for super-junction MOSFETs

Adaptive charge balanced MOSFET techniques

Adaptive charge balanced edge termination

Process for forming a short channel trench MOSFET and device formed...

Structures and methods of fabricating dual gate devices

Processes used in fabricating a metal-insulator-semiconductor field...

Super junction trench power MOSFET device fabrication

High mobility power metal-oxide semiconductor field-effect transistors

Trench polysilicon diode

Edge termination for super junction MOSFET devices

High mobility power metal-oxide semiconductor field-effect transistors

Super junction trench power MOSFET devices

Semiconductor device with trench-like feed-throughs

System and method for substrate wafer back side and edge cross sect...

Process for forming a short channel trench MOSFET and device formed...

Trench metal oxide semiconductor with recessed trench material and...

Ultra-low drain-source resistance power MOSFET

Trench metal oxide semiconductor with recessed trench material and...

Stacked trench metal-oxide-semiconductor field effect transistor de...

Trench polysilicon diode

Method of manufacturing a closed cell trench MOSFET

Method of fabricating super trench MOSFET including buried source e...

Patents Applicationslast 30 patents

MODULATED SUPER JUNCTION POWER MOSFET DEVICES

ADAPTIVE CHARGE BALANCED EDGE TERMINATION

EDGE TERMINATION FOR SUPER-JUNCTION MOSFETS

SEMICONDUCTOR DEVICE WITH COMPOSITE TRENCH AND IMPLANT COLUMNS

STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

EDGE TERMINATION FOR SUPER-JUNCTION MOSFETS

MODULATED SUPER JUNCTION POWER MOSFET DEVICES

SEMICONDUCTOR DEVICE WITH COMPOSITE TRENCH AND IMPLANT COLUMNS

PROCESSES USED IN FABRICATING A METAL-INSULATOR-SEMICONDUCTOR FIELD...

PROCESS FOR FORMING A SHORT CHANNEL TRENCH MOSFET AND DEVICE FORMED...

TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...

Adaptive Charge Balanced MOSFET Techniques

ADAPTIVE CHARGE BALANCED EDGE TERMINATION

EDGE TERMINATION FOR SUPER JUNCTION MOSFET DEVICES

TRENCH POLYSILICON DIODE

STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

Field Boosted Metal-Oxide-Semiconductor Field Effect Transistor

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

SUPER JUNCTION TRENCH POWER MOSFET DEVICES

SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION

SUPER GTO-BASED POWER BLOCKS

Method of fabricating super trench MOSFET including buried source e...

Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor De...

TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...

HIGH MOBILITY POWER METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Method of fabricating super trench MOSFET including buried source e...

Ultra-low drain-source resistance power MOSFET