Kuo-In Chen

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 10,546,750
- Issue date Jan 28, 2020
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 10,032,901
- Issue date Jul 24, 2018
- Vishay-Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench MOSFET and method of manufacture
- Patent number 9,947,770
- Issue date Apr 17, 2018
- Vishay Siliconix
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate semiconductor device with curved gate oxide profile
- Patent number 9,893,168
- Issue date Feb 13, 2018
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench MOSFET and method of manufacture
- Patent number 9,761,696
- Issue date Sep 12, 2017
- Vishay Siliconix
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow semiconductor trench structure
- Patent number 9,685,524
- Issue date Jun 20, 2017
- Vishay Siliconix
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET device fabrication
- Patent number 9,443,974
- Issue date Sep 13, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility power metal-oxide semiconductor field-effect transistors
- Patent number 9,437,424
- Issue date Sep 6, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-high density trench MOSFET
- Patent number 9,431,530
- Issue date Aug 30, 2016
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility power metal-oxide semiconductor field-effect transistors
- Patent number 9,425,043
- Issue date Aug 23, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET devices
- Patent number 9,425,306
- Issue date Aug 23, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate semiconductor device with curved gate oxide profile
- Patent number 9,419,129
- Issue date Aug 16, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow semiconductor trench structure
- Patent number 9,412,833
- Issue date Aug 9, 2016
- Vishay Siliconix
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 9,306,056
- Issue date Apr 5, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 9,230,810
- Issue date Jan 5, 2016
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor with recessed trench material and...
- Patent number 8,883,580
- Issue date Nov 11, 2014
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET contact metallization
- Patent number 8,697,571
- Issue date Apr 15, 2014
- Vishay Siliconix
- Ronald Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET contact metallization
- Patent number 8,471,390
- Issue date Jun 25, 2013
- Vishay Siliconix
- Ronald Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-low drain-source resistance power MOSFET
- Patent number 8,409,954
- Issue date Apr 2, 2013
- Vishay-Silconix
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor with recessed trench material and...
- Patent number 8,368,126
- Issue date Feb 5, 2013
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super trench MOSFET including buried source e...
- Patent number 7,704,836
- Issue date Apr 27, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super trench MOSFET including buried source electrode
- Patent number 7,557,409
- Issue date Jul 7, 2009
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super trench MOSFET including buried source electrode and method of...
- Patent number 7,183,610
- Issue date Feb 27, 2007
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned differential oxidation in trenches by ion implantation
- Patent number 7,012,005
- Issue date Mar 14, 2006
- Siliconix Incorporated
- Karl Lichtenberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making trench MIS device with reduced gate-to-drain capa...
- Patent number 6,921,697
- Issue date Jul 26, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with graduated gate oxide layer
- Patent number 6,903,412
- Issue date Jun 7, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with reduced gate-to-drain capacitance
- Patent number 6,882,000
- Issue date Apr 19, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating trench MIS device with graduated gate oxide l...
- Patent number 6,875,657
- Issue date Apr 5, 2005
- Siliconix Incorporated
- Christiana Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with active trench corners and thick bottom oxide
- Patent number 6,849,898
- Issue date Feb 1, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thicker oxide formation at the trench bottom by selective oxide dep...
- Patent number 6,709,930
- Issue date Mar 23, 2004
- Siliconix Incorporated
- Ben Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20170025527
- Publication date Jan 26, 2017
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE
- Publication number 20160359018
- Publication date Dec 8, 2016
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20160225622
- Publication date Aug 4, 2016
- VISHAY-SILICONIX
- Hamilton LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...
- Publication number 20140235023
- Publication date Aug 21, 2014
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Trench MOSFET and Method of Manufacture
- Publication number 20140206165
- Publication date Jul 24, 2014
- VISHAY-SILICONIX
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET CONTACT METALLIZATION
- Publication number 20130040457
- Publication date Feb 14, 2013
- VISHAY-SILICONIX
- Ronald Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20110101525
- Publication date May 5, 2011
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE
- Publication number 20110089485
- Publication date Apr 21, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-HIGH DENSITY TRENCH MOSFET
- Publication number 20110089486
- Publication date Apr 21, 2011
- VISHAY-SILICONIX
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20110049682
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICES
- Publication number 20110049614
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION
- Publication number 20110053326
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20100019316
- Publication date Jan 28, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NARROW SEMICONDUCTOR TRENCH STRUCTURE
- Publication number 20090104751
- Publication date Apr 23, 2009
- VISHAY-SILICONIX
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...
- Publication number 20080258212
- Publication date Oct 23, 2008
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Trench MOSFET and Method of Manufacture
- Publication number 20080246081
- Publication date Oct 9, 2008
- VISHAY-SILICONIX
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY POWER METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
- Publication number 20080220571
- Publication date Sep 11, 2008
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20080182376
- Publication date Jul 31, 2008
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-low drain-source resistance power MOSFET
- Publication number 20080157281
- Publication date Jul 3, 2008
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET contact metallization
- Publication number 20070284754
- Publication date Dec 13, 2007
- Ronald Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High mobility power metal-oxide semiconductor field-effect transistors
- Publication number 20070262360
- Publication date Nov 15, 2007
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-low drain-source resistance power MOSFET
- Publication number 20070221989
- Publication date Sep 27, 2007
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super trench MOSFET including buried source electrode and method of...
- Publication number 20070187753
- Publication date Aug 16, 2007
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Narrow semiconductor trench structure
- Publication number 20070048966
- Publication date Mar 1, 2007
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super trench MOSFET including buried source electrode and method of...
- Publication number 20050242392
- Publication date Nov 3, 2005
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned differential oxidation in trenches by ion implantation
- Publication number 20030235959
- Publication date Dec 25, 2003
- Siliconix Incorporated
- Karl Lichtenberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKER OXIDE FORMATION AT THE TRENCH BOTTOM BY SELECTIVE OXIDE DEP...
- Publication number 20030235958
- Publication date Dec 25, 2003
- Siliconix Incorporated
- Ben Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making trench MIS device with reduced gate-to-drain capa...
- Publication number 20030062570
- Publication date Apr 3, 2003
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device with graduated gate oxide layer
- Publication number 20030030104
- Publication date Feb 13, 2003
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating trench MIS device with graduated gate oxide l...
- Publication number 20030032248
- Publication date Feb 13, 2003
- Christiana Yue
- H01 - BASIC ELECTRIC ELEMENTS

Kuo-In Chen

Person

Patents Grantslast 30 patents

System and method for substrate wafer back side and edge cross sect...

Semiconductor device with trench-like feed-throughs

Self-aligned trench MOSFET and method of manufacture

Split gate semiconductor device with curved gate oxide profile

Self-aligned trench MOSFET and method of manufacture

Narrow semiconductor trench structure

Super junction trench power MOSFET device fabrication

High mobility power metal-oxide semiconductor field-effect transistors

Super-high density trench MOSFET

High mobility power metal-oxide semiconductor field-effect transistors

Super junction trench power MOSFET devices

Split gate semiconductor device with curved gate oxide profile

Narrow semiconductor trench structure

Semiconductor device with trench-like feed-throughs

System and method for substrate wafer back side and edge cross sect...

Trench metal oxide semiconductor with recessed trench material and...

Power MOSFET contact metallization

Power MOSFET contact metallization

Ultra-low drain-source resistance power MOSFET

Trench metal oxide semiconductor with recessed trench material and...

Method of fabricating super trench MOSFET including buried source e...

Super trench MOSFET including buried source electrode

Super trench MOSFET including buried source electrode and method of...

Self-aligned differential oxidation in trenches by ion implantation

Method for making trench MIS device with reduced gate-to-drain capa...

Trench MIS device with graduated gate oxide layer

Trench MIS device with reduced gate-to-drain capacitance

Method of fabricating trench MIS device with graduated gate oxide l...

Trench MIS device with active trench corners and thick bottom oxide

Thicker oxide formation at the trench bottom by selective oxide dep...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...

Self-Aligned Trench MOSFET and Method of Manufacture

POWER MOSFET CONTACT METALLIZATION

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE

SUPER-HIGH DENSITY TRENCH MOSFET

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

SUPER JUNCTION TRENCH POWER MOSFET DEVICES

SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION

Method of fabricating super trench MOSFET including buried source e...

NARROW SEMICONDUCTOR TRENCH STRUCTURE

TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...

Self-Aligned Trench MOSFET and Method of Manufacture

HIGH MOBILITY POWER METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Method of fabricating super trench MOSFET including buried source e...

Ultra-low drain-source resistance power MOSFET

Power MOSFET contact metallization

High mobility power metal-oxide semiconductor field-effect transistors

Ultra-low drain-source resistance power MOSFET

Super trench MOSFET including buried source electrode and method of...

Narrow semiconductor trench structure

Super trench MOSFET including buried source electrode and method of...

Self-aligned differential oxidation in trenches by ion implantation

THICKER OXIDE FORMATION AT THE TRENCH BOTTOM BY SELECTIVE OXIDE DEP...

Method for making trench MIS device with reduced gate-to-drain capa...

Trench MIS device with graduated gate oxide layer

Method of fabricating trench MIS device with graduated gate oxide l...