Water Lur

Person

Hsin-Chu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
High density plasma chemical vapor deposition process
- Patent number 8,062,536
- Issue date Nov 22, 2011
- United Microelectronics Corp.
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density plasma chemical vapor deposition process
- Patent number 7,718,079
- Issue date May 18, 2010
- United Microelectronics Corporation
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density plasma chemical vapor deposition process
- Patent number 7,514,014
- Issue date Apr 7, 2009
- United Microelectronics Corporation
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap for dual damascene applications
- Patent number 7,449,407
- Issue date Nov 11, 2008
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene structure for the wiring-line structures of multi-le...
- Patent number 7,378,740
- Issue date May 27, 2008
- United Microelectronics Corp.
- Tri-Rung Yew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density plasma chemical vapor deposition process
- Patent number 7,271,101
- Issue date Sep 18, 2007
- United Microelectronics Corporation
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation method for reducing undesired capacitive coupling...
- Patent number 7,253,095
- Issue date Aug 7, 2007
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap for tungsten/aluminum plug applications
- Patent number 7,138,329
- Issue date Nov 21, 2006
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semi-insulating region
- Patent number 7,105,426
- Issue date Sep 12, 2006
- United Microelectronics Corp.
- Joey Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density plasma chemical vapor deposition process
- Patent number 7,078,346
- Issue date Jul 18, 2006
- United Microelectronics Corporation
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semi-insulating region
- Patent number 7,064,048
- Issue date Jun 20, 2006
- United Microelectronics Corp.
- Joey Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical mechanical polishing in forming semiconductor device
- Patent number 7,037,802
- Issue date May 2, 2006
- United Microelectronics Corporation
- Ming-Sheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical mechanical polishing for forming a shallow trench isolatio...
- Patent number 7,018,906
- Issue date Mar 28, 2006
- United Microelectronics Corporation
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semi-insulating region
- Patent number 7,005,363
- Issue date Feb 28, 2006
- United Microelectronics Corp.
- Joey Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming partial reverse active mask
- Patent number 7,001,713
- Issue date Feb 21, 2006
- United Microelectronics, Corp.
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer processing apparatus and methods for depositing cobalt silicide
- Patent number 6,943,110
- Issue date Sep 13, 2005
- United Microelectronics, Corp.
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap structure and formation method for reducing undesired capac...
- Patent number 6,917,109
- Issue date Jul 12, 2005
- United Micorelectronics, Corp.
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cobalt silicide contacts and method of ma...
- Patent number 6,878,627
- Issue date Apr 12, 2005
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,858,487
- Issue date Feb 22, 2005
- United Microelectronics Corp.
- Ming-Sheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical mechanical polishing for forming a shallow trench isolatio...
- Patent number 6,838,357
- Issue date Jan 4, 2005
- United Microelectronics Corporation
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dielectric layers
- Patent number 6,809,022
- Issue date Oct 26, 2004
- United Microelectronics Corp.
- Chih-Chien Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of designing active region pattern with shift dummy pattern
- Patent number 6,810,511
- Issue date Oct 26, 2004
- United Microelectronics Corp.
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical mechanical polishing in forming semiconductor device
- Patent number 6,790,742
- Issue date Sep 14, 2004
- United Microelectronics Corporation
- Ming-Sheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for making cobalt silicide
- Patent number 6,743,721
- Issue date Jun 1, 2004
- United Microelectronics Corp.
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of photolithography
- Patent number 6,627,387
- Issue date Sep 30, 2003
- United Microelectronics Corp.
- Kevin Hsieh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of planarization
- Patent number 6,609,954
- Issue date Aug 26, 2003
- United Microelectronics Corp.
- Ming-Sheng Yang
- B24 - GRINDING POLISHING
Information Patent Grant
Method for forming dielectric layers
- Patent number 6,562,731
- Issue date May 13, 2003
- United Microelectronics Corp.
- Chih-Chien Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Chemical mechanical polishing for forming a shallow trench isolatio...
- Patent number 6,486,040
- Issue date Nov 26, 2002
- United Microelectronics Corporation
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 6,475,865
- Issue date Nov 5, 2002
- United Microelectronics Corp.
- Gwo-Shii Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical mechanical polishing for forming a shallow trench isolatio...
- Patent number 6,448,159
- Issue date Sep 10, 2002
- United Microelectronics Corporation
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS
- Publication number 20100173490
- Publication date Jul 8, 2010
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP FOR TUNGSTEN/ALUMINUM PLUG APPLICATIONS
- Publication number 20070076339
- Publication date Apr 5, 2007
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMI-INSULATING REGION
- Publication number 20060180832
- Publication date Aug 17, 2006
- Joey Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density plasma chemical vapor deposition process
- Publication number 20060099824
- Publication date May 11, 2006
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wafer processing apparatus & methods for depositing cobalt silicide
- Publication number 20060014388
- Publication date Jan 19, 2006
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL MECHANICAL POLISHING FOR FORMING A SHALLOW TRENCH ISOLATIO...
- Publication number 20060009005
- Publication date Jan 12, 2006
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual damascene structure for the wiring-line structures of multi-le...
- Publication number 20050263876
- Publication date Dec 1, 2005
- Tri-Rung Yew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gap formation method for reducing undesired capacitive coupling...
- Publication number 20050263896
- Publication date Dec 1, 2005
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with cobalt silicide contacts
- Publication number 20050179139
- Publication date Aug 18, 2005
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with cobalt silicide contacts
- Publication number 20050176248
- Publication date Aug 11, 2005
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMI-INSULATING REGION
- Publication number 20050170619
- Publication date Aug 4, 2005
- Joey Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMI-INSULATING REGION
- Publication number 20050148207
- Publication date Jul 7, 2005
- Joey Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMI-INSULATING REGION
- Publication number 20050085004
- Publication date Apr 21, 2005
- Joey Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chemical mechanical polishing in forming semiconductor device
- Publication number 20050032328
- Publication date Feb 10, 2005
- Ming-Sheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density plasma chemical vapor deposition process
- Publication number 20050003671
- Publication date Jan 6, 2005
- United Microelectronics Corporation
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20040132259
- Publication date Jul 8, 2004
- Ming-Sheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gap structure and formation method for reducing undesired capac...
- Publication number 20040097013
- Publication date May 20, 2004
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gap for tungsten/aluminum plug applications
- Publication number 20040097065
- Publication date May 20, 2004
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gap for dual damascene applications
- Publication number 20040094821
- Publication date May 20, 2004
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual damascene structure for the wiring-line structures of multi-le...
- Publication number 20040084780
- Publication date May 6, 2004
- Tri-Rung Yew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for making cobalt silicide
- Publication number 20030228745
- Publication date Dec 11, 2003
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual damascene structure for the wiring-line structures of multi-le...
- Publication number 20030189254
- Publication date Oct 9, 2003
- Tri-Rung Yew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming dielectric layers
- Publication number 20030185999
- Publication date Oct 2, 2003
- Chih-Chien Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Chemical mechanical polishing for forming a shallow trench isolatio...
- Publication number 20030148589
- Publication date Aug 7, 2003
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chemical mechanical polishing in forming semiconductor device
- Publication number 20030129808
- Publication date Jul 10, 2003
- Ming-Sheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of planarization
- Publication number 20030087590
- Publication date May 8, 2003
- Ming-Sheng Yang
- B24 - GRINDING POLISHING
Information Patent Application
Method of designing active region pattern with shift dummy pattern
- Publication number 20030056191
- Publication date Mar 20, 2003
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual damascene structure for the wiring-line structures of multi-le...
- Publication number 20020130417
- Publication date Sep 19, 2002
- Tri-Rung Yew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming partial reverse active mask
- Publication number 20020094493
- Publication date Jul 18, 2002
- Coming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCE PERFORMANCE OF COPPER DAMASCENE PROCESS BY EMBEDDING CONFOR...
- Publication number 20020045345
- Publication date Apr 18, 2002
- CHIUNG-SHENG HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High density plasma chemical vapor deposition process

High density plasma chemical vapor deposition process

High density plasma chemical vapor deposition process

Air gap for dual damascene applications

Dual damascene structure for the wiring-line structures of multi-le...

High density plasma chemical vapor deposition process

Air gap formation method for reducing undesired capacitive coupling...

Air gap for tungsten/aluminum plug applications

Method of forming a semi-insulating region

High density plasma chemical vapor deposition process

Method of forming a semi-insulating region

Chemical mechanical polishing in forming semiconductor device

Chemical mechanical polishing for forming a shallow trench isolatio...

Method of forming a semi-insulating region

Method of forming partial reverse active mask

Wafer processing apparatus and methods for depositing cobalt silicide

Air gap structure and formation method for reducing undesired capac...

Semiconductor device with cobalt silicide contacts and method of ma...

Method of manufacturing a semiconductor device

Chemical mechanical polishing for forming a shallow trench isolatio...

Method for forming dielectric layers

Method of designing active region pattern with shift dummy pattern

Chemical mechanical polishing in forming semiconductor device

Method and system for making cobalt silicide

Method of photolithography

Method of planarization

Method for forming dielectric layers

Chemical mechanical polishing for forming a shallow trench isolatio...

Method of fabricating semiconductor device

Chemical mechanical polishing for forming a shallow trench isolatio...

Patents Applicationslast 30 patents

HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS

AIR GAP FOR TUNGSTEN/ALUMINUM PLUG APPLICATIONS

METHOD OF FORMING A SEMI-INSULATING REGION

High density plasma chemical vapor deposition process

Wafer processing apparatus & methods for depositing cobalt silicide

CHEMICAL MECHANICAL POLISHING FOR FORMING A SHALLOW TRENCH ISOLATIO...

Dual damascene structure for the wiring-line structures of multi-le...

Air gap formation method for reducing undesired capacitive coupling...

Semiconductor device with cobalt silicide contacts

Semiconductor device with cobalt silicide contacts

METHOD OF FORMING A SEMI-INSULATING REGION

METHOD OF FORMING A SEMI-INSULATING REGION

METHOD OF FORMING A SEMI-INSULATING REGION

Chemical mechanical polishing in forming semiconductor device

High density plasma chemical vapor deposition process

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Air gap structure and formation method for reducing undesired capac...

Air gap for tungsten/aluminum plug applications

Air gap for dual damascene applications

Dual damascene structure for the wiring-line structures of multi-le...

Method and system for making cobalt silicide

Dual damascene structure for the wiring-line structures of multi-le...

Method for forming dielectric layers

Chemical mechanical polishing for forming a shallow trench isolatio...

Chemical mechanical polishing in forming semiconductor device

Method of planarization

Method of designing active region pattern with shift dummy pattern

Dual damascene structure for the wiring-line structures of multi-le...

Method of forming partial reverse active mask

ENHANCE PERFORMANCE OF COPPER DAMASCENE PROCESS BY EMBEDDING CONFOR...