Controlled atmosphere

Industry

CPC
Y10S148/022

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/022Controlled atmosphere

Industries

Patents Grantslast 30 patents

Information Patent Grant
Annealing magnetic elements for stable mechanical properties
- Patent number 5,870,021
- Issue date Feb 9, 1999
- Sensormatic Electronics Corporation
- Dennis Michael Gadonniex
- G08 - SIGNALLING
Information Patent Grant
Low temperature reaction bonding
- Patent number 5,427,638
- Issue date Jun 27, 1995
- AlliedSignal Inc.
- George G. Goetz
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Growth of P type Group III-V compound semiconductor on Group IV sem...
- Patent number 5,141,569
- Issue date Aug 25, 1992
- Ford MicroElectronics
- Chris R. Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of III-V films by control of MBE growth front stoichiometry
- Patent number 5,094,974
- Issue date Mar 10, 1992
- The United States of America as represented by the administrator of the Natio...
- Frank J. Grunthaner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacuum system with a secondary gas also connected to the roughing p...
- Patent number 5,062,771
- Issue date Nov 5, 1991
- Hitachi, Ltd.
- Akihiko Satou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Open-tube, benign-environment annealing method for compound semicon...
- Patent number 4,898,834
- Issue date Feb 6, 1990
- Amber Engineering, Inc.
- Arthur H. Lockwood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rapid thermal annealing of gallium arsenide with trimethyl arsenic...
- Patent number 4,879,259
- Issue date Nov 7, 1989
- The Board of Trustees of the Leland Stanford Junion University
- Scott K. Reynolds
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for LPCVD of semiconductors using oil free vacuum pumps
- Patent number 4,835,114
- Issue date May 30, 1989
- Hitachi, Ltd.
- Akihiko Satou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Control of nitrogen and/or oxygen in silicon via nitride oxide pres...
- Patent number 4,591,409
- Issue date May 27, 1986
- Texas Instruments Incorporated
- Eva A. Ziem
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for making ohmic and/or Schottky barrier conta...
- Patent number 4,545,115
- Issue date Oct 8, 1985
- International Business Machines Corporation
- Hans J. Bauer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Transient capless annealing process for the activation of ion impla...
- Patent number 4,544,417
- Issue date Oct 1, 1985
- Westinghouse Electric Corp.
- Rowland C. Clarke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and apparatus for fabricating a semiconductor device
- Patent number 4,477,311
- Issue date Oct 16, 1984
- Fujitsu Limited
- Takashi Mimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for low temperature stoichiometric recrystallization of com...
- Patent number 4,095,004
- Issue date Jun 13, 1978
- Hughes Aircraft Company
- Lewis M. Fraas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing defectless epitaxial layer of gallium
- Patent number 3,984,263
- Issue date Oct 5, 1976
- Matsushita Electric Industrial Co., Ltd.
- Ichiro Asao
- C30 - CRYSTAL GROWTH
Information Patent Grant
3704093
- Patent number 3,704,093
- Issue date Nov 28, 1972
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
3697338
- Patent number 3,697,338
- Issue date Oct 10, 1972
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3666553
- Patent number 3,666,553
- Issue date May 30, 1972
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
3615878
- Patent number 3,615,878
- Issue date Oct 26, 1971
- C30 - CRYSTAL GROWTH
Information Patent Grant
3554818
- Patent number 3,554,818
- Issue date Jan 12, 1971
- G01 - MEASURING TESTING
Information Patent Grant
3520810
- Patent number 3,520,810
- Issue date Jul 21, 1970
- C30 - CRYSTAL GROWTH
Information Patent Grant
3394994
- Patent number 3,394,994
- Issue date Jul 30, 1968
- C30 - CRYSTAL GROWTH
Information Patent Grant
3129061
- Patent number 3,129,061
- Issue date Apr 14, 1964
- C30 - CRYSTAL GROWTH
Information Patent Grant
3096219
- Patent number 3,096,219
- Issue date Jul 2, 1963
- C30 - CRYSTAL GROWTH
Information Patent Grant
3093517
- Patent number 3,093,517
- Issue date Jun 11, 1963
- C30 - CRYSTAL GROWTH
Information Patent Grant
3072507
- Patent number 3,072,507
- Issue date Jan 8, 1963
- C30 - CRYSTAL GROWTH
Information Patent Grant
3070467
- Patent number 3,070,467
- Issue date Dec 25, 1962
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3065113
- Patent number 3,065,113
- Issue date Nov 20, 1962
- C30 - CRYSTAL GROWTH
Information Patent Grant
2798989
- Patent number 2,798,989
- Issue date Jul 9, 1957
- C30 - CRYSTAL GROWTH

Controlled atmosphere

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Annealing magnetic elements for stable mechanical properties

Low temperature reaction bonding

Growth of P type Group III-V compound semiconductor on Group IV sem...

Growth of III-V films by control of MBE growth front stoichiometry

Vacuum system with a secondary gas also connected to the roughing p...

Open-tube, benign-environment annealing method for compound semicon...

Rapid thermal annealing of gallium arsenide with trimethyl arsenic...

Method for LPCVD of semiconductors using oil free vacuum pumps

Control of nitrogen and/or oxygen in silicon via nitride oxide pres...

Method and apparatus for making ohmic and/or Schottky barrier conta...

Transient capless annealing process for the activation of ion impla...

Process and apparatus for fabricating a semiconductor device

Process for low temperature stoichiometric recrystallization of com...

Method of producing defectless epitaxial layer of gallium

3704093

3697338

3666553

3615878

3554818

3520810

3394994

3129061

3096219

3093517

3072507

3070467

3065113

2798989