2798989

Information

• Patent Grant
• 2798989

• References
• Source

• Patent Number

  2,798,989

• Date Filed

  Not available

• Date Issued

  Tuesday, July 9, 1957
  67 years ago

• CPC

  • H01L21/31666 - of AIII BV compounds
  • B01J19/00 - Chemical, physical, or physico-chemical processes in general Their relevant apparatus
  • C01B21/06 - Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon
  • C23C14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C30B9/00 - Single-crystal growth from melt solutions using molten solvents
  • C30B11/00 - Single-crystal growth by normal freezing or freezing under temperature gradient
  • C30B25/06 - by reactive sputtering
  • G01D5/18 - by varying effective impedance of discharge tubes or semiconductor devices
  • G01J1/42 - using electric radiation detectors
  • G01R33/06 - using galvano-magnetic devices
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/24 - Alloying of impurity materials
  • H01L21/304 - Mechanical treatment
  • H01L23/3157 - Partial encapsulation or coating
  • H01L29/06 - characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/207 - further characterised by the doping material
  • H01L29/73 - Bipolar junction transistors
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L31/12 - Structurally associated with
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L35/18 - comprising arsenic or antimony or bismuth
  • H01L43/10 - Selection of materials
  • H03B9/12 - using solid state devices
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/02 - Contacts, special
  • Y10S148/022 - Controlled atmosphere
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/072 - Heterojunctions
  • Y10S148/107 - Melt

• US Classifications

  • 257 - Active solid-state devices
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 136 - Batteries: thermoelectric and photoelectric
  • 148 - Metal treatment
  • 324 - Electricity: measuring and testing
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process