3065113

Information

• Patent Grant
• 3065113

• References
• Source

• Patent Number

  3,065,113

• Date Filed

  Not available

• Date Issued

  Tuesday, November 20, 1962
  62 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • C30B19/04 - the solvent being a component of the crystal composition
  • C30B19/106 - adding crystallising material or reactants forming it in situ to the liquid
  • C30B25/02 - Epitaxial-layer growth
  • C30B25/18 - characterised by the substrate
  • C30B29/08 - Germanium
  • C30B29/10 - Inorganic compounds or compositions
  • H01L21/0237 - Materials
  • H01L21/02395 - Arsenides
  • H01L21/02521 - Materials
  • H01L21/02573 - Conductivity type
  • H01L21/02631 - Physical deposition at reduced pressure
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/022 - Controlled atmosphere
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/107 - Melt
  • Y10S148/17 - Vapor-liquid-solid

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 033 - Geometrical instruments
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices