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Liquid-phase epitaxial-layer growth
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Industry
CPC
C30B19/00
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Parent Industries
C
CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
Current Industry
C30B19/00
Liquid-phase epitaxial-layer growth
Sub Industries
C30B19/02
using molten solvents
C30B19/04
the solvent being a component of the crystal composition
C30B19/06
Reaction chambers Boats for supporting the melt Substrate holders
C30B19/061
Tipping system
C30B19/062
Vertical dipping system
C30B19/063
Sliding boat system
C30B19/064
Rotating sliding boat system
C30B19/065
Multiple stacked slider system
C30B19/066
Injection or centrifugal force system
C30B19/067
Boots or containers
C30B19/068
Substrate holders
C30B19/08
Heating of the reaction chamber or the substrate
C30B19/10
Controlling or regulating
C30B19/103
Current controlled or induced growth
C30B19/106
adding crystallising material or reactants forming it in situ to the liquid
C30B19/12
characterised by the substrate
Industries
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last 30 patents
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Patent Grant
Template-assisted synthesis of 2D nanosheets using nanoparticle tem...
Patent number
11,964,879
Issue date
Apr 23, 2024
Nanoco 2D Materials Limited
Steven Daniels
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Additively manufactured single-crystal metallic components, and met...
Patent number
11,865,641
Issue date
Jan 9, 2024
HRL Laboratories, LLC
John H. Martin
B22 - CASTING POWDER METALLURGY
Information
Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
Patent number
11,784,045
Issue date
Oct 10, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Martin Christopher Holland
C30 - CRYSTAL GROWTH
Information
Patent Grant
In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)
Patent number
11,725,300
Issue date
Aug 15, 2023
EPIR, INC.
Sushant Sonde
C30 - CRYSTAL GROWTH
Information
Patent Grant
Integrated crucible and die system for sapphire sheet growing
Patent number
11,713,519
Issue date
Aug 1, 2023
Sapphire Systems, Inc.
John Outwater
C30 - CRYSTAL GROWTH
Information
Patent Grant
Targeted heat control system and method for integrated crucible and...
Patent number
11,713,520
Issue date
Aug 1, 2023
Sapphire Systems, Inc.
John Outwater
C30 - CRYSTAL GROWTH
Information
Patent Grant
Crystallization of two-dimensional structures comprising multiple t...
Patent number
11,621,163
Issue date
Apr 4, 2023
The Regents of the University of California
Nobuhiko Kobayashi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Group 13 (III) nitride thick layer formed on an underlying layer ha...
Patent number
11,473,212
Issue date
Oct 18, 2022
NGK Insulators, Ltd.
Makoto Iwai
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
Patent number
11,453,956
Issue date
Sep 27, 2022
SLT TECHNOLOGIES, INC.
Mark P. D'Evelyn
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
SiC crucible, SiC sintered body, and method of producing SiC single...
Patent number
11,440,849
Issue date
Sep 13, 2022
Shin-Etsu Chemical Co., Ltd.
Naofumi Shinya
C30 - CRYSTAL GROWTH
Information
Patent Grant
Liquid phase epitaxy of III-V materials and alloys
Patent number
11,441,234
Issue date
Sep 13, 2022
University of Louisville Research Foundation, Inc.
Mahendra K. Sunkara
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon-based molten composition and method for manufacturing silic...
Patent number
11,427,926
Issue date
Aug 30, 2022
LG Chem, Ltd.
Chan Yeup Chung
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing group III nitride crystal and seed substrate
Patent number
11,377,757
Issue date
Jul 5, 2022
Panasonic Holdings Corporation
Yoshio Okayama
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of forming oxide film, method of manufacturing semiconductor...
Patent number
11,373,864
Issue date
Jun 28, 2022
Denso Corporation
Tatsuji Nagaoka
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of forming oxide film, method of manufacturing semiconductor...
Patent number
11,371,161
Issue date
Jun 28, 2022
Denso Corporation
Tatsuji Nagaoka
C30 - CRYSTAL GROWTH
Information
Patent Grant
Film formation apparatus and method of manufacturing semiconductor...
Patent number
11,280,023
Issue date
Mar 22, 2022
Denso Corporation
Tatsuji Nagaoka
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing a group III nitride semiconductor by controlli...
Patent number
11,280,024
Issue date
Mar 22, 2022
Toyoda Gosei Co., Ltd.
Takayuki Sato
C30 - CRYSTAL GROWTH
Information
Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
Patent number
11,251,042
Issue date
Feb 15, 2022
Taiwan Semiconductor Manufacturing Co., Ltd
Martin Christopher Holland
C30 - CRYSTAL GROWTH
Information
Patent Grant
Group III nitride substrate and method for producing group III nitr...
Patent number
11,248,310
Issue date
Feb 15, 2022
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Yoshio Okayama
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of manufacturing a group III-nitride crystal comprising a nu...
Patent number
11,220,759
Issue date
Jan 11, 2022
Osaka University
Yusuke Mori
C30 - CRYSTAL GROWTH
Information
Patent Grant
Methods of forming materials
Patent number
11,164,600
Issue date
Nov 2, 2021
Seagate Technology LLC
Tong Zhao
C30 - CRYSTAL GROWTH
Information
Patent Grant
Semiconductor substrate, gallium nitride single crystal, and method...
Patent number
11,162,189
Issue date
Nov 2, 2021
Dexerials Corporation
Kazuhiro Yagihashi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Film formation apparatus and film formation method
Patent number
11,142,842
Issue date
Oct 12, 2021
Denso Corporation
Tatsuji Nagaoka
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for making epitaxial structure
Patent number
11,078,597
Issue date
Aug 3, 2021
Tsinghua University
Yang Wei
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a GaN single crystal comprising disposing a nucle...
Patent number
10,975,492
Issue date
Apr 13, 2021
SLT TECHNOLOGIES, INC.
Mark Philip D'Evelyn
C30 - CRYSTAL GROWTH
Information
Patent Grant
SiC single crystal production method and production apparatus
Patent number
10,968,535
Issue date
Apr 6, 2021
Toyota Jidosha Kabushiki Kaisha
Masayoshi Doi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Underlying substrate including a seed crystal layer of a group 13 n...
Patent number
10,947,638
Issue date
Mar 16, 2021
NGK INSULATORS, LTD.
Takayuki Hirao
C30 - CRYSTAL GROWTH
Information
Patent Grant
Production method for group III nitride crystal
Patent number
10,927,476
Issue date
Feb 23, 2021
Osaka University
Yusuke Mori
C30 - CRYSTAL GROWTH
Information
Patent Grant
Manufacturing method of III-V compound crystal and manufacturing me...
Patent number
10,910,511
Issue date
Feb 2, 2021
Osaka University
Yusuke Mori
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Optical quality diamond material
Patent number
10,851,471
Issue date
Dec 1, 2020
Element Six Technologies Limited
Herman Philip Godfried
C01 - INORGANIC CHEMISTRY
Patents Applications
last 30 patents
Information
Patent Application
CHIRAL ORGANIC OPTOELECTRONIC MOLECULES WITH TUNABLE REFRACTIVE IND...
Publication number
20240150935
Publication date
May 9, 2024
Meta Platforms Technologies, LLC
Lafe Joseph Purvis
C30 - CRYSTAL GROWTH
Information
Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
Publication number
20240030027
Publication date
Jan 25, 2024
Taiwan Semiconductor Manufacturing Co., Ltd.
Martin Christopher Holland
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP I...
Publication number
20230399770
Publication date
Dec 14, 2023
Panasonic Intellectual Property Management Co., Ltd.
AKIO UETA
C30 - CRYSTAL GROWTH
Information
Patent Application
ADDITIVELY MANUFACTURED SINGLE-CRYSTAL METALLIC COMPONENTS, AND MET...
Publication number
20230364714
Publication date
Nov 16, 2023
HRL LABORATORIES, LLC
John H. MARTIN
B22 - CASTING POWDER METALLURGY
Information
Patent Application
DEVICE AND METHOD FOR MANUFACTURING A CRYSTALLINE CONVERSION LAYER...
Publication number
20230357948
Publication date
Nov 9, 2023
Commissariat A L'Energie Atomique et Aux Energies Alternatives
Jean-Marie VERILHAC
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE AND METHOD OF MANUFAC...
Publication number
20230357956
Publication date
Nov 9, 2023
Do Hyung KIM
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
Publication number
20230257902
Publication date
Aug 17, 2023
Toyoda Gosei Co., Ltd.
Takayuki SATO
C30 - CRYSTAL GROWTH
Information
Patent Application
BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL FILM PROD...
Publication number
20230250554
Publication date
Aug 10, 2023
Shin-Etsu Chemical Co., Ltd.
Toshiaki WATANABE
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMIC...
Publication number
20230250555
Publication date
Aug 10, 2023
NGK Insulators, Ltd.
Yoshitaka KURAOKA
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
Publication number
20230220587
Publication date
Jul 13, 2023
NGK Insulators, Ltd.
Masahiro SAKAI
C30 - CRYSTAL GROWTH
Information
Patent Application
BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL, FARADAY...
Publication number
20230194902
Publication date
Jun 22, 2023
Shin-Etsu Chemical Co., Ltd.
Toshiaki WATANABE
C01 - INORGANIC CHEMISTRY
Information
Patent Application
METHOD FOR PREPARING AGNPS@SASP SUBSTRATE MATERIAL AND APPLICATION...
Publication number
20230168202
Publication date
Jun 1, 2023
Henan Agricultural University
Miaoyun LI
C30 - CRYSTAL GROWTH
Information
Patent Application
FABRICATION OF PBSE NANOSTRUCTURES BY EMPLOYING CHEMICAL BATH DEPOS...
Publication number
20230160099
Publication date
May 25, 2023
Illinois Tool Works Inc.
Richard S. Kim
B82 - NANO-TECHNOLOGY
Information
Patent Application
FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONA...
Publication number
20230119023
Publication date
Apr 20, 2023
NGK Insulators, Ltd.
Masahiro SAKAI
C30 - CRYSTAL GROWTH
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20230066135
Publication date
Mar 2, 2023
Sanken Electric Co., Ltd
Toru YOSHIE
C30 - CRYSTAL GROWTH
Information
Patent Application
HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...
Publication number
20230037175
Publication date
Feb 2, 2023
Meta Platforms Technologies, LLC
Tingling Rao
C30 - CRYSTAL GROWTH
Information
Patent Application
In-situ Laser Annealing of Te growth defects in CdZnTe (iLAST-CZT)
Publication number
20230002928
Publication date
Jan 5, 2023
Sushant Sonde
C30 - CRYSTAL GROWTH
Information
Patent Application
TEXTURED METAL SUBSTRATES FOR NEGATIVE ELECTRODES OF LITHIUM METAL...
Publication number
20220416220
Publication date
Dec 29, 2022
GM GLOBAL TECHNOLOGY OPERATIONS LLC
Andrew C. Bobel
C30 - CRYSTAL GROWTH
Information
Patent Application
Composite Wavelength Converter
Publication number
20220393080
Publication date
Dec 8, 2022
Friedrich-Alexander-Universitat Erlangen-Nurnberg
Yuriy Zorenko
C30 - CRYSTAL GROWTH
Information
Patent Application
STRAIN ENGINEERING AND EPITAXIAL STABILIZATION OF HALIDE PEROVSKITES
Publication number
20220320433
Publication date
Oct 6, 2022
The Regents of the University of California
Sheng Xu
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE,...
Publication number
20220275532
Publication date
Sep 1, 2022
NGK Insulators, Ltd.
Suguru NOGUCHI
C30 - CRYSTAL GROWTH
Information
Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
Publication number
20220130669
Publication date
Apr 28, 2022
Taiwan Semiconductor Manufacturing Co., Ltd.
Martin Christopher Holland
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITR...
Publication number
20220119984
Publication date
Apr 21, 2022
Panasonic Intellectual Property Management Co., Ltd.
YOSHIO OKAYAMA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
Publication number
20220081800
Publication date
Mar 17, 2022
Toyoda Gosei Co., Ltd.
Takayuki SATO
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL
Publication number
20210285124
Publication date
Sep 16, 2021
DEXERIALS CORPORATION
Shinya AKIYAMA
C30 - CRYSTAL GROWTH
Information
Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
Publication number
20210134594
Publication date
May 6, 2021
Taiwan Semiconductor Manufacturing Co., Ltd.
Martin Christopher Holland
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
OPTICAL QUALITY DIAMOND MATERIAL
Publication number
20210115591
Publication date
Apr 22, 2021
ELEMENT SIX TECHNOLOGIES LIMITED
HERMAN PHILIP GODFRIED
C01 - INORGANIC CHEMISTRY
Information
Patent Application
LIQUID PHASE EPITAXY OF III-V MATERIALS AND ALLOYS
Publication number
20210108330
Publication date
Apr 15, 2021
UNIVERSITY OF LOUISVILLE RESEARCH FOUNDATION, INC.
Mahendra K. Sunkara
C30 - CRYSTAL GROWTH
Information
Patent Application
CRYSTALLIZATION OF TWO-DIMENSIONAL STRUCTURES COMPRISING MULTIPLE T...
Publication number
20210043451
Publication date
Feb 11, 2021
The Regents of the University of California
Nobuhiko Kobayashi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL...
Publication number
20210013366
Publication date
Jan 14, 2021
NGK Insulators, Ltd.
Masahiro SAKAI
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...