3208888

Information

• Patent Grant
• 3208888

• References
• Source

• Patent Number

  3,208,888

• Date Filed

  Not available

• Date Issued

  Tuesday, September 28, 1965
  59 years ago

• CPC

  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/007 - Autodoping
  • Y10S148/017 - Clean surfaces
  • Y10S148/025 - Deposition multi-step
  • Y10S148/049 - Equivalence and options
  • Y10S148/051 - Etching
  • Y10S148/122 - Polycrystalline
  • Y10S148/129 - Pulse doping
  • Y10S148/158 - Sputtering
  • Y10S438/979 - Tunnel diodes

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices