3312570

Information

• Patent Grant
• 3312570

• References
• Source

• Patent Number

  3,312,570

• Date Filed

  Not available

• Date Issued

  Tuesday, April 4, 1967
  57 years ago

• CPC

  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • C01B25/06 - Hydrogen phosphides
  • C01B25/088 - containing plural metal
  • C01G31/00 - Compounds of vanadium
  • C22C1/007 - Preparing arsenides or antimonides, especially of the III-VI-compound type
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/0237 - Materials
  • H01L21/02395 - Arsenides
  • H01L21/02409 - Selenides
  • H01L21/02543 - Phosphides
  • H01L21/02546 - Arsenides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/185 - Joining of semiconductor bodies for junction formation
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/072 - Heterojunctions
  • Y10S148/11 - Metal-organic CVD, ruehrwein type
  • Y10S252/951 - for vapor transport
  • Y10S438/933 - Germanium or silicon or Ge-Si on III-V

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process