3404451

Information

• Patent Grant
• 3404451

• References
• Source

• Patent Number

  3,404,451

• Date Filed

  Not available

• Date Issued

  Tuesday, October 8, 1968
  57 years ago

• CPC

  • H01L23/291 - Oxides or nitrides or carbides
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/2252 - using predeposition of impurities into the semiconductor surface
  • H01L23/485 - consisting of layered constructions comprising conductive layers and insulating layers
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/017 - Clean surfaces
  • Y10S148/02 - Contacts, special
  • Y10S148/043 - Dual dielectric
  • Y10S148/102 - Mask alignment
  • Y10S148/144 - Shallow diffusion
  • Y10S148/151 - Simultaneous diffusion

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices