3485684

Information

• Patent Grant
• 3485684

• References
• Source

• Patent Number

  3,485,684

• Date Filed

  Not available

• Date Issued

  Tuesday, December 23, 1969
  55 years ago

• CPC

  • H01L21/02238 - silicon in uncombined form
  • H01L21/02299 - pre-treatment
  • H01L21/22 - Diffusion of impurity materials
  • H01L21/221 - of killers
  • H01L21/288 - from a liquid
  • H01L21/31662 - of silicon in uncombined form
  • H01L29/167 - further characterised by the doping material
  • Y10S148/04 - Dopants, special
  • Y10S148/041 - Doping control in crystal growth
  • Y10S148/043 - Dual dielectric
  • Y10S148/062 - Gold diffusion
  • Y10S148/097 - Lattice strain and defects
  • Y10S148/114 - Nitrides of silicon
  • Y10S148/122 - Polycrystalline
  • Y10S438/938 - Lattice strain control or utilization

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices