3755882

Information

• Patent Grant
• 3755882

• References
• Source

• Patent Number

  3,755,882

• Date Filed

  Not available

• Date Issued

  Tuesday, September 4, 1973
  51 years ago

• CPC

  • B23K35/286 - Al as the principal constituent
  • B23K35/3006 - Ag as the principal constituent
  • H01L24/29 - of an individual layer connector
  • H01L24/83 - using a layer connector
  • H01L2224/29111 - Tin [Sn] as principal constituent
  • H01L2224/29123 - Magnesium [Mg] as principal constituent
  • H01L2224/29124 - Aluminium [Al] as principal constituent
  • H01L2224/8319 - Arrangement of the layer connectors prior to mounting
  • H01L2224/83801 - Soldering or alloying
  • H01L2924/01005 - Boron [B]
  • H01L2924/01006 - Carbon [C]
  • H01L2924/01012 - Magnesium [Mg]
  • H01L2924/01013 - Aluminum [Al]
  • H01L2924/01015 - Phosphorus [P]
  • H01L2924/01019 - Potassium [K]
  • H01L2924/01023 - Vanadium [V]
  • H01L2924/01027 - Cobalt [Co]
  • H01L2924/01029 - Copper [Cu]
  • H01L2924/01033 - Arsenic [As]
  • H01L2924/01039 - Yttrium [Y]
  • H01L2924/01042 - Molybdenum [Mo]
  • H01L2924/01047 - Silver [Ag]
  • H01L2924/0105 - Tin [Sn]
  • H01L2924/01061 - Promethium [Pm]
  • H01L2924/01074 - Tungsten [W]
  • H01L2924/01079 - Gold [Au]
  • H01L2924/01082 - Lead [Pb]
  • H01L2924/0132 - Binary Alloys
  • H01L2924/01322 - Eutectic Alloys
  • H01L2924/014 - Solder alloys
  • H01L2924/12036 - PN diode
  • H01L2924/15747 - Copper [Cu] as principal constituent
  • Y10T428/12674 - Ge- or Si-base component

• US Classifications

  • 228 - Metal fusion bonding
  • 136 - Batteries: thermoelectric and photoelectric
  • 420 - Alloys or metallic compositions
  • 428 - Stock material or miscellaneous articles
  • 438 - Semiconductor device manufacturing: process