3762945

Information

• Patent Grant
• 3762945

• References
• Source

• Patent Number

  3,762,945

• Date Filed

  Not available

• Date Issued

  Tuesday, October 2, 1973
  51 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02395 - Arsenides
  • H01L21/02463 - Arsenides
  • H01L21/02546 - Arsenides
  • H01L21/02573 - Conductivity type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/30621 - Vapour phase etching
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/007 - Autodoping
  • Y10S148/017 - Clean surfaces
  • Y10S148/051 - Etching
  • Y10S148/056 - Gallium arsenide
  • Y10S148/057 - Gas flow control
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/079 - Inert carrier gas
  • Y10S148/129 - Pulse doping
  • Y10S148/135 - Removal of substrate
  • Y10S148/139 - Schottky barrier

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 427 - Coating processes