3852120

Information

• Patent Grant
• 3852120

• References
• Source

• Patent Number

  3,852,120

• Date Filed

  Not available

• Date Issued

  Tuesday, December 3, 1974
  50 years ago

• CPC

  • H01L21/28185 - with a treatment
  • H01L21/263 - with high-energy radiation
  • H01L21/31155 - by ion implantation
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/51 - Insulating materials associated therewith
  • H01L29/513 - the variation being perpendicular to the channel plane
  • H01L29/518 - the insulating material containing nitrogen
  • H01L29/66568 - Lateral single gate silicon transistors
  • Y10S148/024 - Defect control-gettering and annealing
  • Y10S148/084 - Ion implantation of compound devices
  • Y10S148/128 - Proton bombardment of silicon
  • Y10S438/91 - Controlling charging state at semiconductor-insulator interface

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices