3870575

Information

• Patent Grant
• 3870575

• References
• Source

• Patent Number

  3,870,575

• Date Filed

  Not available

• Date Issued

  Tuesday, March 11, 1975
  50 years ago

• CPC

  • H01L33/0062 - for devices with an active region comprising only III-V compounds
  • C30B19/04 - the solvent being a component of the crystal composition
  • C30B19/061 - Tipping system
  • C30B29/44 - Gallium phosphide
  • H01L21/02392 - Phosphides
  • H01L21/0254 - Nitrides
  • H01L21/02543 - Phosphides
  • H01L21/0257 - Doping during depositing
  • H01L21/02579 - P-type
  • H01L21/02581 - Transition metal or rare earth elements
  • H01L21/02625 - using melted materials
  • H01L21/02628 - using solutions
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S252/951 - for vapor transport
  • Y10S438/917 - Deep level dopants
  • Y10S438/925 - Fluid growth doping control

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process