Appplied Physics Letters, Feb. 1998, Japan, Kelly et al.* |
University of CA Berkeley, Feb. 1998, USA, Wong et al.* |
“Optical Process for Liftoff of Group III-Nitride Films”, by Kelly et al., phys. stat. sot. (a) 159, R3 (1997). |
“Damage-free Separation of GaN Thin Films From Sapphire Substrates”, by Wong et al., Applied Physics Letters, vol. 72, No. 5, Feb. 2, 1998, pp. 599-601. |
“Fabrication of Thin-Film InGaN Light-emitting Diode Membranes by Laser Lift-off”, by Wong et al., Applied Physics Letters, vol. 75, No. 10, Sep. 6, 1999, pp. 1360-1362. |
“Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff”, by Kelly et al., Jpn, J. Appl. Phys., vol. 38 (1999) pp. L217-L219. |
“Technical Specification Group Services and Systems Aspects: Architecture of an All IP Network”; 3 GPP TR 23.922, Version 1.0.0, Oct. 1, 1999; pp. 1-68. |
“Diameter Mobile IP Extensions”; Internet Draft, Oct. 1999, pp. 1-33. |
“Service Trading for Mobile Agents with LDAP as Service Directory”; by Park et al.; IEEE 1998, 0-8186-8751; Jul. 1998; pp. 270-275. |
“Mobile IP”; Internet Article, ‘Online,’,; Jul. 13, 1999, pp. 1-63. |