Co2Fe-based heusler alloy and spintronics devices using the same

Abstract

To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25

Description

TECHNICAL FIELD

The present invention relates to a Co₂Fe-based Heusler alloy with high spin polarization and a spintronics device using the same.

BACKGROUND ART

Materials with a high spin polarization are required to achieve high performance spintronics devices, such as magnetic random access memory (MRAM), spin metal-oxide-semiconductor field effect transistor (spin MOSFET), tunnel magnetoresistance (TMR) used for a read head of a hard disk drive, giant magnetoresistance (GMR), spin torque oscillator (STO), and nonlocal spin valve (NLSV) which has been gained attention as a next generation read head. Co-based Heusler alloys are the candidates for highly spin polarized material, because some of the Co-based Heusler alloys are predicted to be a half-metal (half-metal: no density of states in one band at Fermi level, 100% spin polarization) and have a Curie temperature sufficiently higher than a room temperature.

Heusler alloys have an L2₁ ordered structure and their chemical formula is X₂YZ. However, since the kinetics of L2₁ ordering is weak, a perfect L2₁ structure may not be obtained but disorder structures are easily formed. The structure with the disordering between Y and Z is a B2 structure. That between X, Y and Z is an A2 structure. The reduction of the spin polarization by the disordering is theoretically showed. Experimentally, Co₂MnSi which is predicted to be a half-metal has the spin polarization of 0.59 (59%) estimated by a point contact Andreev reflection (PCAR) method. The low spin polarization is due to the disorder structure.

The search for high spin polarized materials have been carried out up to now. According to Non Patent Literature 1, the high spin polarization of 75% was obtained by the substitution of Ga for Ge in Co₂MnGe. Since the Co₂MnGaGe is an intermetallic compound, high degree of L2₁ order can be achieved. However, Mn in Co₂MnGaGe readily causes an oxidation and diffuses into an Ag layer used for a non-magnetic metal of current-perpendicular-to-plane (CPP)-GMR devices. On the other hand, Co₂Fe-based Heusler alloys do not have such problems. Therefore, the development of Co₂Fe-based Heusler alloys with high spin polarization (more than 0.65 by PCAR measurement) is expected.

Among the Co₂Fe-based Heusler alloys, Co₂FeAl_0.5Si_0.5, which is formed by the substation of Al with Si in Co₂FeSi, is well known as a highly spin polarized material. In Non Patent Literature 3, it has the spin polarization of 0.6 (60%). CPP-GMR using this alloy has large magnetoresistance change of 34% at RT and resistance-area product of 8 mΩμm². The spin polarization of Co₂FeAl_0.5Si_0.5 was estimated to be 0.7 (70%) and 0.77 (77%) at RT and 14 K, respectively. In order to improve the properties of spintronics devices, the development of the highly spin polarized materials higher than Co₂FeAlSi is strongly required.

CITATION LIST

Non Patent Literature

Non Patent Literature 1. B. Varaprasad et al., Appl. Phys. Express. 3, 023002 (2010).

Non Patent Literature 2: N. Hase et al., JAP108, 093916 (2010)

Non Patent Literature 3: T. M. Nakatani et al., JAP, 102, 033916 (2007).

Non Patent Literature 4: T. M. Nakatani et al. Appl. Phys. Lett., 96, 212501 (2010).

Non Patent Literature 5: B. Balke et al., APL90, 172501, (2007).

Non Patent Literature 6: M. Zhang et al., JPD37, 2049 (2004).

Non Patent Literature 7: R. Y. Umetsu et al., JAC499, (2010).

Non Patent Literature 8: K. R. Kumar et al., IEEE Trans. Magn., 45, 3997 (2009).

Non Patent Literature 9: Ministry of Education, Culture, Sports, Science and Technology; Research and Development for the Construction of Next Generation IT Fundamental Technology, “Research and development of device/system fundamental technology for high performance/ultra-low power consumption computing”; and New energy and industrial technology development organization, “Development of Nanobit Technology for Ultra-high density magnetic recording (Green IT project)”, Joint outcome report meeting, Oct. 29, 2010.

Non Patent Literature 10: Y. Fukuma et al., Nature Mater. 10, 527 (2011).

SUMMARY OF INVENTION

Technical Problem

It is an object of the present invention to provide a Co₂Fe-based Heusler alloy with high spin polarization and a high performance spintronics device using the same.

Solution to Problem

In the present invention, the spin polarization is caused to increase by the increment of the density of state of one of majority and minority spin states by substituting Ga for some of Ge in Co₂FeGe.

Heusler alloys, Co₂FeGa and Co₂FeGe are already reported in Non Patent Literatures 5-8. According to these references, the followings are known;

• Co₂FeGa bulk alloy:
• Formation of an L2₁ single phase
• Curie temperature is 1093 K.
• Spin polarization is 0.59 (59%).
• Not half-metal according to the calculation.
• Co₂FeGe bulk alloy
• The formation of an L2₁ single phase is difficult.
• Half-metallicity was predicted by the calculation.

There is no report on the Co₂Fe(GaGe) neither bulk nor thin film.

The present inventors have conducted experiments in the following procedures:

• (1) preparation and characterization of a Co₂Fe(GaGe) bulk alloys
• (2) preparation and characterization of a Co₂Fe(GaGe) thin film, and
• (3) fabrication of a high performance spintronics devices, and found a Co₂Fe(GaGe) thin film alloy that has high spin polarization and exhibits a high GMR and oscillation characteristics, and eventually developed a high performance spintronics devices incorporating the thin film.

Invention 1 provides a Co₂Fe-based Heusler alloy for use in a spintronics device, in which the Co₂Fe-based Heusler alloy has a component composition of Co₂Fe(Ga_xGe_1-x) (0.25<x<0.60)

Invention 2 provides the Co₂Fe-based Heusler alloy of Invention 1, in which the Co₂Fe-based Heusler alloy has a spin polarization larger than 0.65.

Invention 3 provides a CPP-GMR device using the Co₂Fe-based Heusler alloy thin film of Invention 1 as a ferromagnetic electrode, in which the CPP-GMR device has a thin-film layered structure of MgO substrate/Cr/Ag/Co₂Fe-based Heusler alloy/Ag/Co₂Fe-based Heusler alloy/Ag/Ru.

Invention 4 provides an STO device using the Co₂Fe-based Heusler alloy thin film of Invention 1 as a ferromagnetic electrode, in which the STO device has a thin-film layered structure of MgO substrate/Cr/Ag/Co₂Fe-based Heusler alloy/Ag/Co₂Fe-based Heusler alloy/Ag/Ru.

Invention 5 provides a NLSV device using the Co₂Fe-based Heusler alloy thin film of Invention 1 as a ferromagnetic electrode, in which the NLSV device has two wires of MgO substrate/Cr/Ag/Co₂Fe-based Heusler alloy which is bridged by and an Ag non-magnetic wire that bridges the two wires.

Advantageous Effects of Invention

It becomes possible to produce a Heusler alloy thin film having a spin polarization larger than 0.65 by substituting Ga for some of Ge of Heusler alloy Co₂FeGe, and produce a CPP-GMR device showing a high MR ratio, an STO device showing high output, and an NLSV device, which incorporate the above described thin film.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 shows density of states of Co₂FeGa, Co₂FeGe, and Co₂Fe(Ga_0.5Ge_0.5) calculated by a first-principle method.

FIG. 2 shows density of state (enlarged graph around Fermi level) of Co₂FeGa, Co₂FeGe, and Co₂Fe(Ga_0.5Ge_0.5) calculated by a first-principle method.

FIG. 3 shows XRD patterns of Co₂Fe (Ga_xGe_1-x) bulk alloys.

FIG. 4 shows the spin polarization dependence of x (Ga) for Co₂Fe (Ga_xGe_1-x) bulk alloys.

FIG. 5 shows XRD patterns of Co₂Fe(Ga_0.5Ge_0.5) alloys annealed at various temperatures.

FIG. 6 is a DTA curve of Co₂Fe(Ga_0.5Ge_0.5).

FIG. 7 shows XRD patterns of Co₅₂Fe₂₂(Ga₁₃Ge₁₃) thin films annealed at various temperatures.

FIG. 8 shows XRD patterns of Co₅₂Fe₂₂(Ga₁₃Ge₁₃) thin films annealed at various temperatures.

FIG. 9 shows the change of the saturation magnetization of Co₅₂Fe₂₂(Ga₁₃Ge₁₃) thin film as a function of annealing temperature.

FIG. 10 shows the resistivity changes of Co₅₂Fe₂₂(Ga₁₃Ge₁₃) thin films with temperature.

FIG. 11 shows the temperature dependence of the damping constant of Co₅₂Fe₂₂(Ga₁₃Ge₁₃) thin films.

FIG. 12 shows the spin polarization of Co₅₂Fe₂₂(Ga₁₃Ge₁₃) thin film after annealing at 500° C.

FIG. 13 shows a schematic view of a CPP-GMR device. The film stack from the bottom is MgO substrate/Cr(10)/Ag(100)/Co₅₂Fe₂₂(Ga₁₃Ge₁₃) (12)/Ag(5)/Co₅₂Fe₂₂(Ga₁₃Ge₁₃) (12)Ag(5)/Ru(8). The numbers in parentheses denote the film thickness in nm.

FIG. 14 shows the magnetoresistance change as a function of magnetic field in MgO substrate/Cr(10)/Ag(100)/Co₅₂Fe₂₂(Ga₁₃Ge₁₃) (12)/Ag(5)/Co₅₂Fe₂₂(Ga₁₃Ge₁₃) (12)Ag(5)/Ru(8). The numbers in parentheses denote the film thickness in nm.

FIG. 15 shows the temperature dependence of ΔRA, R_p (resistance in a parallel configuration of the two ferromagnetic layers) and R_ap (resistance in an antiparallel configuration of the two ferromagnetic layers).

FIG. 16 shows a schematic view of an STO device. The film stack from the bottom is MgO substrate/Cr(10)/Ag(100)/Co₅₂Fe₂₂(Ga₁₃Ge₁₃)/Ag(5)/Co₅₂Fe₂₂(Ga₁₃Ge₁₃) (2)/Ag(5)/Ru(8). The numbers in parentheses denote the film thickness in nm.

FIG. 17 shows the oscillation characteristics of MgO substrate/Cr(10)/Ag(100)/Co₅₂Fe₂₂(Ga₁₃Ge₁₃)/Ag(5)/Co₅₂Fe₂₂(Ga₁₃Ge₁₃) (2)/Ag(5)/Ru(8).

FIG. 18 shows SEM images of an NLSV device: (a) non-local and (b) local configurations.

FIG. 19 is the resistance curve of the NLSV device using CFGG in the non-local configuration.

FIG. 20 is the resistance curve of the NLSV device using CFGG in the local configuration.

DESCRIPTION OF EMBODIMENTS

While the present invention has features as described above, embodiments thereof will be described below.

<First-principal calculation> FIGS. 1 and 2 show the density of states of Co₂FeGa, Co₂FeGe and Co₂Fe(Ga_0.5Ge_0.5) by a first principle calculation. The calculation is conducted by the Generalized Gradient Approximation (GGA) method taking into account Coulomb potential, where the Coulomb potential is set to a value to reproduce magnetization. There are two kinds of crystal structures: L2₁ and B2. In the L2₁ structure, Co₂FeGe in which the Fermi level is in the band gap of the minority spin states is a half-metal, and Co₂FeGa in which the minority spin states exist in the Fermi level is not a half-metal. Meanwhile, Co₂Fe(Ga_0.5Ge_0.5) is a half-metal. In the case of the B2 structure, although the band gap in the minority spin state reduces, Co₂Fe(Ga_0.5Ge_0.5) is a half-metal because the Fermi level is in the middle of the band gap. Since the Co₂Fe(Ga_0.5Ge_0.5) is a half-metal even in the B2 structure and the effect of the disordering on the spin polarization of Co₂Fe(Ga_0.5Ge_0.5) is small due to the Fermi level in the middle of the band gap, it is expected to show the high spin polarization even in the thin film which is difficult to get high degree of L2₁ order.

EXAMPLES

<Bulk Alloy>

For Co₂Fe(Ga_xGe_1-x), ingots having component compositions shown in Table 1 and purity higher than 99.99% were prepared, and the ingots were arc melted to fabricate button-like bulk alloys. The weight of a bulk alloy was 15 g. The bulk alloys were annealed at 450° C. for 168 hours in He atmosphere. From the chemical analysis by inductive coupling plasma (ICP), it was confirmed that the compositions of the bulk alloys were as designed.

TABLE 1
Component formulation of Co2FeGaxGe1−x alloy (unit g)
	x	Co	Fe	Ga	Ge
	x = 1	7.2615	3.4410	4.2961	0
	x = 0.75	7.2407	3.4311	3.2124	1.1156
	x = 0.5	7.2191	3.4209	2.1352	2.2246
	x = 0.25	7.1977	3.4107	1.0644	3.3270
	x = 0	7.1749	3.3999	0	4.4251

The structure was evaluated by an X-ray diffraction method (XRD), magnetic properties by a superconducting quantum interference device (SQUID), and the spin polarization by a point contact Andreev reflection (PCAR) method.

FIG. 3 shows the XRD patterns of Co₂Fe(Ga_xGe_1-x) bulk alloys. In Co₂FeGe at x=0, there were peaks of a second phase as shown by other than the peaks of an L2₁ structure. It means that it is not an L2₁ single phase. On the other hand, the alloys with x=0.25-1 show an L2₁ single phase.

FIG. 4 shows the spin polarization dependence of x. The spin polarization shows maximum of 0.68 at x=0.5. High spin polarization (larger than 0.65) was obtained in the range of 0.25<x<0.60. The spintronics devices with this range can show high performance.

FIG. 5 shows the XRD patterns of Co₂Fe(Ga_xGe_1-x) annealed at various temperatures. In Table 2, relative integrated intensities of (111) and (220) which are for the degree of L2₁ order and those of (200) and (220) which are for the degree of B2 order are shown. Both of the L2₁ order and the B2 order do not change with the annealing temperature. It means that this alloy can achieve high degree of L2₁ order at a relatively low annealing temperature of 450° C., which is one of the characters of this alloy.

TABLE 2
Heat-treatment temperature dependence of degree of
L21 and B2 order (unit %)
	Without
	heat treatment	450° C.	550° C.	650° C.
	L21	30	31	30	27
	B2	58	63	61	62

FIG. 6 shows a differential thermal analysis (DTA) curve of Co₂Fe(Ga_0.5Ge_0.5). It is seen that the Curie point was as high as 1080K, which is an advantage in practical uses. The order-disorder transformation temperature of L2₁/B2 was 1288K.

<Alloy Thin Film>

Since the above described experiments on the bulk alloys have revealed that a Co₂Fe(Ga_0.5Ge_0.5) alloy has a high spin polarization, thin film experiment was carried out. Thin films were fabricated by a magnetron sputtering method with a Co_45.56Fe_22.65Ga_17.92Ge_15.63 target. The composition of the thin film by ICP analysis was Co₅₂Fe₂₂Ga₁₃Ge₁₃. The used substrate was of MgO single crystal. A 20 nm-thick Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film was fabricated on the underlayer of Cr(10)/Ag(100). Here, the numbers in parentheses denote the thickness of each metal film.

FIG. 7 shows the XRD patterns of the thin films annealed at different temperatures. Since the diffraction peaks of (200) and (400) of the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film and (100) of the MgO single crystal substrate have been observed, it is found that the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film has been epitaxially grown on the MgO single crystal substrate. The diffraction peaks from (200) and (400) were observed at all the annealing temperatures. It means that these films have more than a B2 ordered structure.

As the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film is an epitaxial film, the diffraction peak from other plane can be measured by titling the film. The results measured by tilting the film were shown in FIG. 8. The diffraction peak from L2₁ (111) superlattice was observed at higher than 500° C. Therefore, the film is considered to have a B2 ordered structure up to 400° C. and an L2₁ ordered structure at 500° C. or higher. The degrees of L2₁ order and B2 order in a 500° C.-annealed sample were estimated to be 0.11 and 0.8, respectively. The lattice parameters of the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film estimated by Nelson-Riley's function were a=0.576 nm and c=0.570 nm, indicating a cubic crystal.

FIG. 9 shows the annealing temperature dependence of the saturation magnetization of Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film. The circles and triangles show the data at 10 K and RT, respectively. The dotted line in the figure shows a theoretical value. The values are lower than the theoretical one because the film is considered to have an off-stoichiometric composition and imperfection of L2₁ order.

FIG. 10 shows the resistivity changes. The resistivity of the Co₅₂Fe₂₂Ga₁₃Ge₁₃ film annealed at 500° C. decreases about one third of unannealed one due to the low spin scattering. It is considered to be attributed to the degree of order.

Since when the magnetic moment of the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film is brought into precession by electric current, its response is improved as the damping constant decreases, a lower damping constant is desired in a spin torque oscillator device. FIG. 11 shows the annealing temperature dependence of the damping constant of the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film. The damping constant decreases with the increase of the annealing temperature, and reaches 0.008 after annealing at 500° C. The value is lower than the damping constant of normal ferromagnetic material like Permalloy whose damping constant is 0.01.

FIG. 12 shows the spin polarization of the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film annealed at 500° C. To protect the surface of the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film against oxidation, 1 nm-thick Al was capped. From the scattering factor dependence of the spin polarization, the spin polarization of the film was estimated to be 0.75 (75%).

<Fabrication of Spintronics Devices>

Based on the experimental results on the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film, it was confirmed that the L2₁ ordered structure and high spin polarization were obtained after annealing at 500° C. Accordingly, CPP-GMR devices using a Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film as a ferromagnetic electrode was fabricated and the transport properties were evaluated.

The film stack was MgO substrate/Cr(10)/Ag(100)/Co₅₂Fe₂₂Ga₁₃Ge₁₃(12)/Ag(5)/Co₅₂Fe₂₂Ga₁₃Ge₁₃(12)/Ag(5)/Ru(8). The numbers in parentheses indicate the film thickness in nm. The films were fabricated by DC and RF sputtering methods and annealed at 300° C. and 500° C. for 30 min after the deposition of Ag and Ru, respectively. The former annealing was for the improvement of the surface roughness and the latter was for the ordering of the Co₅₂Fe₂₂Ga₁₃Ge₁₃ thin film. The CPP-GMR device was processed into an elliptic pillar shape of 70×140 nm², 100×200 nm², 150×300 nm² and 200×400 nm² by EB lithography and Ar ion milling.

FIG. 14 shows the magnetic field dependence of the magnetoresistance of MgO substrate/Cr(10)/Ag(100)/Co₅₂Fe₂₂Ga₁₃ Ge₁₃(12)/Ag(5)/Co₅₂Fe₂₂Ga₁₃Ge₁₃(12)/ag(5)/Ru(8). The triangle and circle marks correspond to the curves at RT and 10 K, respectively. When the upper and lower Co₅₂Fe₂₂Ga₁₃Ge₁₃ electrodes are in an antiparallel configuration, high magnetoresistance showed a high value. Large values of area-resistance product (ΔRA)=9.5mΩμm², MR=41.7% at RT, ΔRA=26.4 mΩμm², MR=129.1% at 10K were obtained. The CPP-GMR of CoFe/Cu/CoFe whose electrodes are of normal ferromagnetic material showed ΔRA=2 mΩμm², MR=few %. Compared to these values, the CPP-GMR using the Co₅₂Fe₂₂Ga₁₃Ge₁₃ electrodes showed a large value.

FIG. 15 shows the temperature dependence of the ΔRA, R_p(resistance in a parallel configuration) and R_AP(resistance in an antiparallel configuration). As temperature increases, R_P increases and R_AP decreases, resulting in a decrease in ΔRA. The decrease in the ΔRA may be attributed to the decrease in the spin polarization.

Moreover, an STO device was fabricated using Co₅₂Fe₂₂Ga₁₃Ge₁₃ as a ferromagnetic electrode and measured for the transport properties. The film of MgO substrate/Cr(10)/Ag(100)/Co₅₂Fe₂₂Ga₁₃Ge₁₃(12)/Ag(5)/Co₅₂Fe₂₂Ga₁₃Ge₁₃(12)/Ag(5)/Ru(8) was annealed at 500° C. and formed into a pillar of 130×130 nm² by microfabrication. An output of 2.5nV/Hz^0.5 at about 16 GHz was obtained by applying a current of 4.6×10⁷ A/cm² and an external magnetic field of 485 Oe (FIG. 17). Note that the line width in this cases was 30 MHz and Q factor was about 460. These values are equivalent to those which have been reported up to now (Non Patent Literature 9).

Further, two ferromagnetic wires (a width of 100 nm) of Co₅₂Fe₂₂Ga₁₃Ge₁₃ and a non-magnetic wire (of Ag, a width of 150 nm) that bridges the two ferromagnetic wires were fabricated by the microfabrication to evaluate the transport properties of an NLSV device. As shown in FIG. 19, a very large spin signal of 114 mΩ at the RT was obtained in the nonlocal configuration. This value is larger than any value which has been reported up to now (Non Patent Literatuire 10). The device resistance of the NLSV was small due to the all metal system. Therefore, it is possible to generate a relatively large spin current. The resistance change in a local configuration shown in FIG. 20 is twice as large as that in a nonlocal configuration, which agrees with the analytical calculation results.

As a matter of course, the present invention will not be limited to the above described examples and, as needless to say, various embodiments are possible regarding details thereof.

INDUSTRIAL APPLICABILITY

By using a device according to the high MR ratio material of the present invention it has become possible to provide a read head at a density exceeding 2 Tb/in², and a microwave-assisted magnetic recording (MAMR) head. Further, it also becomes possible to perform a high efficiency spin injection from the material of the present invention having a high spin polarization to a semiconductor.

Claims

1. A Co2Fe-based Heusler alloy element for use in a spintronics device, comprising: a thin film of Co2Fe-based Heusler alloy having a thickness 20 nm or less, the thin film being deposited on a substrate having an underlayer,wherein the Co2Fe-based Heusler alloy has a composition as shown in Formula 1 below: Co2Fe(GaxGe1-x),  <Formula 1>wherein x satisfies 0.25<x<0.60, andspin polarization is 0.65 or more.

2. The Co2Fe-based Heusler alloy element of claim 1 wherein the Co2Fe-based Heusler alloy element is used as a ferromagnetic electrode of a CPP-GMR device.

3. The Co2Fe-based Heusler alloy element of claim 1, wherein the Co2Fe-based Heusler alloy element is used as a ferromagnetic electrode of an STO device.

4. The Co2Fe-based Heusler alloy element of claim 1, wherein the Co2Fe-based Heusler alloy element is used as a ferromagnetic electrode, and the Heusler alloy has a B2 order and an L21 order.

5. A method of making Co2Fe-based Heusler alloy for use in a spintronics device, comprising: forming an underlayer on a substrate;forming a thin film of Co2Fe-based Heusler alloy at a thickness of 20 nm or less, wherein the Co2Fe-based Heusler alloy has a composition as shown in Formula 1below: Co2Fe(GaxGe1-x),   <Formula 1>wherein x satisfies 0.25<x<0.60, andheat-treating the thin film in the temperature range 400° C. or more but 600° C. or less.