Claims
- 1. A method for treating silicon nitride (SixNy) films that comprises:
electron beam treating the silicon nitride film.
- 2. The method of claim 1 which further comprises heating the film to a temperature in a range from about room temperature to about 700° C.
- 3. The method of claim 1 wherein the step of electron beam treating includes exposing the film to electron beam current at doses in a range from about 100 μC/cm2 to about 10000 μC/cm2.
- 4. The method of claim 1 wherein the step of electron beam treating further includes exposing the film from about 0.5 minute to about 120 minutes.
- 5. The method of claim 1 wherein the step of electron beam treating comprises placing the film in an ambient gas in a chamber wherein an electron beam is formed between a cathode and an anode, and providing a cathode voltage in range from about −0.5 KV to about −10 KV.
- 6. The method of claim 5 wherein the ambient gas is one or more of: Ne, He, Ar, H2, O2, Kr, Xe, and N2.
- 7. The method of claim 5 wherein a pressure of the ambient gas in the chamber and a working distance between the cathode and the anode are maintained so that arcing does not occur between the cathode and the anode.
- 8. The method of claim 5 wherein the pressure of the ambient gas in the chamber is maintained at one or more levels that provide a substantially constant electron beam current during at least one treatment period.
- 9. A method for fabricating a pMOSFET that comprises steps of:
oxidizing a gate; forming a gate electrode; implanting to form shallow source/drain extensions; forming a SiN gate sidewall; implanting to form source/drain deep junctions; and activating the source/drain.
Parent Case Info
[0001] This is a continuation-in-part of a patent application entitled “Methods and Apparatus for E-Beam Treatment Used to Fabricate Integrated Circuit Devices” having Ser. No. 10/428,374 that was filed on May 1, 2003, which patent application claimed the benefit of U.S. Provisional Application No. 60/378,799, filed on May 8, 2002, and which patent application is incorporated by reference herein.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60378799 |
May 2002 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10428374 |
May 2003 |
US |
Child |
10824313 |
Apr 2004 |
US |