1. Field of the Invention
The present invention relates to exposure apparatuses, exposure methods, and device manufacturing methods, and more particularly to an exposure apparatus and an exposure method in which an object is exposed with an energy beam via an optical system, and a device manufacturing method which uses the exposure apparatus or the exposure method.
2. Description of the Background Art
Conventionally, in a lithography process for manufacturing electron devices (microdevices) such as semiconductor devices (integrated circuits or the like) or liquid crystal display elements, an exposure apparatus such as a projection exposure apparatus by a step-and-repeat method (a so-called stepper) or a projection exposure apparatus by a step-and-scan method (a so-called scanning stepper (which is also called a scanner)) is mainly used.
Substrates such as a wafer, a glass plate or the like subject to exposure which are used in these types of exposure apparatuses are gradually (for example, in the case of a wafer, in every ten years) becoming larger. Although a 300-mm wafer which has a diameter of 300 mm is currently the mainstream, the coming of age of a 450 mm wafer which has a diameter of 450 mm looms near. When the transition to 450 mm wafers occurs, the number of dies (chips) output from a single wafer becomes double or more the number of chips from the current 300 mm wafer, which contributes to reducing the cost. In addition, it is expected that through efficient use of energy, water, and other resources, cost of all resource use will be reduced.
However, with the wafer size increasing, the size and the weight of the wafer stage which moves holding the wafer will also increase. Increasing weight of the wafer stage can easily degrade the position control performance of the wafer stage, especially in the case of a scanner which performs exposure (transfer of a reticle pattern) during a synchronous movement of a reticle stage and a wafer stage as is disclosed in, for example, U.S. Pat. No. 5,646,413, whereas, increasing size of the wafer stage will increase the footprint of the apparatus. Therefore, it is desirable to make the size and the weight of a movable member which moves holding a wafer be thin and light. However, because the thickness of the wafer does not increase in proportion to the size of the wafer, intensity of the 450 mm wafer is much weaker when compared to the 300 mm wafer. Therefore, in the case of making the movable member thin, there was a concern of the movable member deforming by the weight of the wafer and the movable member itself, and as a consequence, the wafer held by the movable member could also be deformed, which would degrade the transfer accuracy of the pattern to the wafer.
According to a first aspect of the present invention, there is provided a first exposure apparatus that exposes an object with an energy beam via an optical system supported by a first support member, the apparatus comprising: a first movable member which holds the object and is movable along a predetermined plane including at least a first and second axis that are orthogonal to each other; a second movable member which supports one end and the other end of the first movable member in a direction parallel to the second axis and is movable at least along the predetermined plane; a guide surface forming member which forms a guide surface used when the first movable member moves along the predetermined plane; a second support member which is placed apart from the guide surface forming member on a side opposite to the optical system, via the guide surface forming member, and whose positional relation with the first support member is maintained at a predetermined state; a position measuring system which includes a first measurement member that irradiates a measurement surface parallel to the predetermined plane with a measurement beam and receives light from the measurement surface, and which obtains positional information of the first movable member within the predetermined plane based on an output of the first measurement member, the measurement surface being arranged at one of the first movable member and the second support member and at least a part of the first measurement member being arranged at the other of the first movable member and the second support member; and a drive system which includes a first driving section which applies a drive force on the one end of the first movable member and a second driving section that applies a drive force on the other end, and drives the first movable member in one of a singly driven and integrally driven manner with the second movable member, based on positional information from the position measuring system, whereby the first and second driving sections can apply a drive force whose magnitude and a direction of generation can each be controlled independently to the one end and the other end of the first movable member, in a direction parallel to the first axis and the second axis, a direction orthogonal to the predetermined plane, and a rotational direction around an axis parallel to the first axis.
According to this apparatus, the first and second driving sections of the drive system relatively drive one end and the other end in a direction parallel to the second axis of the first movable member holding the object, respectively, with respect to the second movable member which supports the fist movable member. Accordingly, by applying drive forces in directions opposite to each other in a rotational direction around the axis parallel to the first axis to the one end and the other end of the first movable member, the first movable member can be deflected in a convexo-concave shape when viewing the first movable member from the first-axis direction.
In this case, the guide surface is used to guide the movable body in a direction orthogonal to the predetermined plane and can be of a contact type or a noncontact type. For example, the guide method of the noncontact type includes a configuration using static gas bearings such as air pads, a configuration using magnetic levitation, and the like. Further, the guide surface is not limited to a configuration in which the movable body is guided following the shape of the guide surface. For example, in the configuration using static gas bearings such as air pads, the opposed surface of the guide surface forming member that is opposed to the movable body is finished so as to have a high flatness degree and the movable body is guided in a noncontact manner via a predetermined gap so as to follow the shape of the opposed surface. On the other hand, in the configuration in which while a part of a motor or the like that uses an electromagnetic force is placed at the guide surface forming member, a part of the motor or the like is placed also at the movable body, and a force acting in a direction orthogonal to the predetermined plane described above is generated by the guide surface forming member and the movable body cooperating, the position of the movable body is controlled by the force on a predetermined plane. For example, a configuration is also included in which a planar motor is arranged at the guide surface forming member and forces in directions which include two directions orthogonal to each other within the predetermined plane and the direction orthogonal to the predetermined plane are made to be generated on the movable body and the movable body is levitated in a noncontact manner without arranging the static gas bearings.
According to a second aspect of the present invention, there is provided a second exposure apparatus that exposes an object with an energy beam via an optical system supported by a first support member, the apparatus comprising: a movable body that holds the object and is movable along a predetermined plane; a second support member whose positional relation with the first support member is maintained in a predetermined state; a movable body supporting member placed between the optical system and the second support member so as to be apart from the second support member, which supports the movable body at one end and the other end of the movable body in a direction orthogonal to a longitudinal direction of the second support member when the movable body moves along the predetermined plane; a position measuring system which includes a first measurement member that irradiates a measurement surface parallel to the predetermined plane with a measurement beam and receives light from the measurement surface, and which obtains positional information of the movable body within the predetermined plane based on an output of the first measurement member, the measurement surface being arranged at one of the movable body and the second support member and at least a part of the first measurement member being arranged at the other of the movable body and the second support member; and a drive system which includes a first driving section that applies a drive force on the one end of the movable body and a second driving section that applies a drive force on the other end of the movable body, and relatively drives the movable body with respect to the movable body support member, based on positional information from the position measuring system.
According to this apparatus, the first and second driving sections of the drive system relatively drive one end and the other end of the movable body holding the object in the direction orthogonal to the longitudinal direction of the second support member, respectively. Accordingly, by applying drive forces in directions opposite to each other in a rotational direction around the axis parallel to the longitudinal direction of the second support member to the one end and the other end of the movable body, the movable body can be deflected in a convexo-concave shape when viewed from the axial direction parallel to the longitudinal direction of the second support member.
In this case, the movable body supporting member supporting the movable body at least in two points in the direction orthogonal to the longitudinal direction of the second support member means that the movable body is supported in the direction orthogonal to the longitudinal direction of the second support member, for example, at only both ends or at both ends and a mid section in the direction orthogonal to the two-dimensional plane, at a section excluding the center and both ends in the direction orthogonal to the longitudinal direction of the second support member, the entire section including both ends in the direction orthogonal to the longitudinal direction of the second support member, or the like. In this case, the method of the support widely includes the contact support, as a matter of course, and the noncontact support such as the support via static gas bearings such as air pads or the magnetic levitation or the like.
According to a third aspect of the present invention, there is provided a device manufacturing method, including exposing an object with one of the first and second exposure apparatus of the present invention; and developing the object which has been exposed.
According to a fourth aspect of the present invention, there is provided an exposure method in which an object is exposed with an energy beam via an optical system supported by a first support member, the method comprising: making a first movable member, which holds the object and is movable along a predetermined plane including at least a first and second axis that are orthogonal to each other, relatively drivable at one end and the other end of the first movable member in a direction parallel to the second axis, be supported by a second movable member which is movable at least along the predetermined plane; irradiating a measurement beam on a measurement plane parallel to the predetermined plane provided on one of the first movable member and the second support member, which is placed away from a guide surface forming member that forms a guide surface when the first movable member moves along the predetermined plane on the opposite side of the optical system, with the guide surface forming member in between, and whose positional relation with the first support member is maintained at a predetermined state, and obtaining positional information at least within the predetermined plane of the first movable member, based on an output of a first measurement member which receives light from the measurement plane and has at least a part of the member provided in the other of the first movable member and the second support member; and applying a drive force whose magnitude and a direction of generation can each be controlled independently to the one end and the other end of the first movable member, in a direction parallel to the first axis and the second axis, a direction orthogonal to the predetermined plane, and a rotational direction around an axis parallel to the first axis, based on positional information which has been obtained.
According to this method, one end and the other end in a direction parallel to the second axis of the first movable member holding the object are driven, respectively, with respect to the second movable member which supports the first movable member. Accordingly, by applying drive forces in directions opposite to each other in a rotational direction around the axis parallel to the first axis to the one end and the other end of the first movable member, the first movable member can be deflected in a convexo-concave shape when viewing the first movable member from the first-axis direction.
According to a fifth aspect of the present invention, there is provided device manufacturing method, including exposing an object by the exposure method of the present invention; and developing the object which has been exposed.
In the accompanying drawings;
An embodiment of the present invention will be described below, with reference to
As shown in
Exposure station 200 is equipped with an illuminations system 10, a reticle stage RST, a projection unit PU, a local liquid immersion device 8, and the like.
Illumination system 10 includes: a light source; and an illumination optical system that has an illuminance uniformity optical system including an optical integrator and the like, and a reticle blind and the like (none of which are illustrated), as disclosed in, for example, U.S. Patent Application Publication No. 2003/0025890 and the like. Illumination system 10 illuminates a slit-shaped illumination area IAR, which is defined by the reticle blind (which is also referred to as a masking system), on reticle R with illumination light (exposure light) IL with substantially uniform illuminance. As illumination light IL, ArF excimer laser light (wavelength: 193 nm) is used as an example.
On reticle stage RST, reticle R having a pattern surface (the lower surface in
Positional information within the XY plane (including rotational information in the θz direction) of reticle stage RST is constantly detected at a resolution of, for example, around 0.25 nm with a reticle laser interferometer (hereinafter, referred to as a “reticle interferometer”) 13 via a movable mirror 15 fixed to reticle stage RST (actually, a Y movable mirror (or a retroreflector) that has a reflection surface orthogonal to the Y-axis direction and an X movable mirror that has a reflection surface orthogonal to the X-axis direction are arranged). The measurement values of reticle interferometer 13 are sent to a main controller 20 (not illustrated in
Above reticle stage RST, a pair of reticle alignment systems RA1 and RA2 by an image processing method, each of which has an imaging device such as a CCD and uses light with an exposure wavelength (illumination light IL in the present embodiment) as alignment illumination light, are placed (in
Projection unit PU is placed below reticle stage RST in
Local liquid immersion device 8 includes a liquid supply device 5, a liquid recovery device 6 (none of which are illustrated in
In the present embodiment, main controller 20 controls liquid supply device 5 (refer to
Measurement station 300 is equipped with an alignment device 99 arranged at main frame BD. Alignment device 99 includes five alignment systems AL1 and AL21 to AL24 shown in
In the present embodiment, as each of alignment systems AL1 and AL21 to AL24, for example, an FIA (Field Image Alignment) system by an image processing method is used. The configurations of alignment systems AL1 and AL21 to AL24 are disclosed in detail in, for example, PCT International Publication No. 2008/056735 and the like. The imaging signal from each of alignment systems AL1 and AL21 to AL24 is supplied to main controller 20 (refer to
Incidentally, although it is not illustrated, exposure apparatus 100 has a first loading position where load of the wafer to wafer stage WST1 and unload of the wafer from wafer stage WST1 is performed, and a second loading position where load of the wafer to wafer stage WST2 and unload of the wafer from wafer stage WST1 is performed. In the case of the present embodiment, the first loading position is arranged on the surface plate 14A side and the second loading position is arranged on the surface plate 143 side.
As shown in
Base board 12 is made up of a member having a tabular outer shape, and as shown in
As shown in
As shown in
Surface plates 14A and 14B respectively have first sections 14A1 and 14B1 each having a relatively thin plate shape on the upper surface of which the guide surface is formed, and second sections 14A2 and 14B2 each having a relatively thick plate shape and being short in the X-axis direction that are integrally fixed to the lower surfaces of first sections 14A1, and 14B1, respectively. The end on the +X side of first section 14A1 of surface plate 14A slightly overhangs, to the +X side, the end surface on the +X side of second section 14A2, and the end on the −X side of first section 14B1 of surface plate 14B slightly overhangs, to the −X side, the end surface on the −X side of second section 14B2. However, the configuration is not limited to the above-described one, and a configuration can be employed in which the overhangs are not arranged.
Inside each of first sections 14A1 and 14B1, a coil unit (drawing omitted) is housed that includes a plurality of coils placed in a matrix shape with the XY two-dimensional directions serving as a row direction and a column direction. The magnitude and direction of the electric current supplied to each of the plurality of coils that configure each of the coil units are controlled by main controller 20 (refer to
Inside (on the bottom portion of) second section 14A2 of surface plate 14A, a magnetic unit MUa, which is made up of a plurality of permanent magnets (and yokes not shown) placed in the shape of a matrix with the XY two-dimensional directions serving as a row direction and a column direction, is housed so as to correspond to coil unit CU housed on the upper surface side of base board 12. Magnetic unit MUa configures, together with coil unit CU of base board 12, a surface plate driving system 60A (refer to
Similarly, inside on the bottom portion of) second section 14B2 of surface plate 14B, a magnetic unit MUb made up of a plurality of permanent magnets (and yokes not shown) is housed that configures, together with coil unit CU of base board 12, a surface plate driving system 60B (refer to
Positional information of surface plates 14A and 14B in the directions of three degrees of freedom is obtained (measured) independently from each other by a first surface plate position measuring system 69A and a second surface plate position measuring system 69B (refer to
While the configurations of first surface plate position measuring system 69A and second surface plate position measuring system 69B are not especially limited, an encoder system can be used in which, for example, encoder head sections, which obtain (measure) positional information of the respective surface plates 14A and 14B in the directions of three degrees of freedom within the XY plane by irradiating measurement beams on scales (e.g. two-dimensional gratings) placed on the lower surfaces of second sections 14A2 and 14B2 respectively and receiving diffraction light (reflected light) generated by the two-dimensional grating, are placed at base board 12 (or the encoder head sections are placed at second sections 14A2 and 14B2 and scales are placed at base board 12, respectively). Incidentally, it is also possible to obtain (measure) the positional information of surface plates 14A and 14B by, for example, an optical interferometer system or a measuring system that is a combination of an optical interferometer system and an encoder system.
One of the wafer stages, wafer stage WST1 is equipped with a fine movement stage WFS1 that holds wafer W and a coarse movement stage WCS1 having a rectangular frame shape that encloses the periphery of fine movement stage WFS1, as shown in
As shown in
Inside (on the bottom portions of) coarse movement slider sections 90a and 90b, as shown in
Incidentally, while coarse movement stages WCS1 and WCS2 of the present embodiment have the configuration in which only coarse movement slider sections 90a and 90b have the magnetic units of the planar motors, the present embodiment is not limited to this, and the magnetic unit can be placed also at coupling members 92a and 92b. Further, the actuators to drive coarse movement stages WCS1 and WCS2 are not limited to the planar motors by the electromagnetic force (Lorentz force) drive method, but for example, planar motors by a variable magnetoresistance drive method or the like can be used. Further, the drive directions of coarse movement stages WCS1 and WCS2 are not limited to the directions of six degrees of freedom, but can be, for example, only directions of three degrees of freedom (X, Y, θz) within the XY plane. In this case, coarse movement stages WCS1 and WCS2 should be levitated above surface plates 14A and 14B, for example, using static gas bearings (e.g. air bearings). Further, in the present embodiment, while the planar motor of a moving magnet type is used as each of coarse movement stage driving systems 62A and 62B, besides this, a planar motor of a moving coil type in which the magnetic unit is placed at the surface plate and the coil unit is placed at the coarse movement stage can also be used.
On the side surface on the −Y side of coarse movement slider 90a and on the side surface on the +Y side of coarse movement slider 90b, stator sections 94a and 94b that configure a part of fine movement stage driving system 64 (refer to
Inside (on the bottom section of) stator sections 94a and 94b, a pair of coil units CUa and Cub, each of which includes a plurality of coils placed in the shape of a matrix with the XY two-dimensional directions serving as a row direction and a column direction, are housed, respectively (refer to
Inside coupling members 92a and/or 92b, various types of optical members (e.g. an aerial image measuring instrument, an uneven illuminance measuring instrument, an illuminance monitor, a wavefront aberration measuring instrument, and the like) can be housed.
In this case, when wafer stage WST1 is driven with acceleration/deceleration in the Y-axis direction on surface plate 14A, by the planar motor that configures coarse movement stage driving system 62A (e.g. when wafer stage WST1 moves between exposure station 200 and measurement station 300), surface plate 14A moves in a direction opposite to wafer stage WST1 according to the so-called law of action and reaction (the law of conservation of momentum) due to the action of a reaction force of the drive of wafer stage WST1. Further, it is also possible to make a state where the law of action and reaction described above does not hold, by generating a drive force in the Y-axis direction with surface plate driving system 60A.
Further, when wafer stage WST2 is driven in the Y-axis direction on surface plate 14B, surface plate 14B is also driven in a direction opposite to wafer stage WST2 according to the so-called law of action and reaction (the law of conservation of momentum) due to the action of a reaction force of a drive force of wafer stage WST2. More specifically, surface plates 14A and 14B function as the countermasses and the momentum of a system composed of wafer stages WST1 and WST2 and surface plates 14A and 14B as a whole is conserved and movement of the center of gravity does not occur. Consequently, any inconveniences do not arise such as the uneven loading acting on surface plates 14A and 14B owing to the movement of wafer stages WST1 and WST2 in the Y-axis direction. Incidentally, regarding wafer stage WST2 as well, it is possible to make a state where the law of action and reaction described above does not hold, by generating a drive force in the Y-axis direction with surface plate driving system 60B.
Further, on movement in the X-axis direction of wafer stages WST1 and WST2, surface plates 14A and 14B function as the countermasses owing to the action of a reaction force of the drive force.
As shown in
As shown in
Plate 82 is fixed and integrated to the upper surface of framing member 80c, so that its entire surface (or a part of the surface) becomes flush with the surface of wafer W held by wafer holder WH, which will be described later on. On this integration, outer wall 80r1 and inner wall 80r2 support the outer edge and the inner edge of plate 82, respectively. Further, the surfaces of plate 82 and wafer W are located substantially flush with the surface of coupling member 92b described previously.
Bottom section 80b is fixed to a bottom surface of framing member 81c. In this case, by plate 82, framing member 80c, bottom section 80b, and inner wall 80r2, a space is formed sectioned by the plurality of ribs 80r3, inside main section 80. Incidentally, in the embodiment, fine movement stage WFS1 (WFS2) is supported by coarse movement stage WCS1 (WCS2) in a state where the lower surface of bottom section 80b is positioned on the same plane as the lower surface of coarse movement stage WCS1.
Main section 80 is configured of a material that is lighter, stronger, and has a low thermal expansion, such as for example, ceramics. In the case of using ceramics, main section 80 can be made integrally, except for plate 82. Now, to strengthen (to provide high rigidity to) main section 80, rib 80r3 can be further increased, or the plurality of ribs can be combined into an appropriate shape, such as in a radiating shape and the like.
In the circular recess section divided by inner wall 80r2, a wafer holder that holds wafer W by vacuum adsorption or the like is placed. Incidentally, wafer holder WH can be fixed to main section 80 so as to be detachable via, for example, a holding mechanism such as an electrostatic chuck mechanism or a clamp mechanism. Further, wafer holder WH can be fixed to main section 80 by an adhesive agent or the like.
In the embodiment, in fine movement stage WFS1 (or WFS2) because a hollow section is formed inside main section 80 to decrease its weight, position controllability of fine movement stage WFS1 (or WFS2) can be improved. In this case, a heat insulating material can be placed in the hollow section formed in main section 80 of fine movement stage WFS1 (WFS2) This makes it possible to prevent any adverse effect that the heat generated in the fine movement stage drive system including the magnetic unit which will be described later in the pair of mover sections 84a and 84b has on grating RG.
The liquid-repellent treatment against liquid Lq is applied to the surface of plate 82 (the liquid-repellent surface is formed). In the embodiment, the surface of plate 82 includes a base material made up of metal, ceramics, glass or the like, and a film of liquid-repellent material formed on the surface of the base material. The liquid-repellent material includes, for example, PFA (Tetra fluoro ethylene-perfluoro alkylvinyl ether copolymer), PTFE (Poly tetra fluoro ethylene), Teflon (registered trademark) or the like. Incidentally, the material that forms the film can be an acrylic-type resin or a silicon-series resin. Further, the entire plate 82 can be formed with at least one of the PFA, PTFE, Teflon (registered trademark), acrylic-type resin and silicon-series resin. In the present embodiment, the contact angle of the upper surface of plate 82 with respect to liquid Lq is, for example, more than or equal to 90 degrees. On the surface of coupling member 92b described previously as well, the similar liquid-repellent treatment is applied.
Further, in the vicinity of a corner on the +X side located on the +Y side of plate 82, a circular opening is formed, and a measurement plate FM1 is placed in the opening without any gap therebetween in a state substantially flush with the surface of wafer W. On the upper surface of measurement plate FM1, the pair of first fiducial marks to be respectively detected by the pair of reticle alignment systems RA1 and RA2 (refer to
In the center of the lower surface of main section 80 (bottom section 80b), as shown in
As shown in
Mover section 84b includes two plate-like members 84b1 and 84b2, and is configured in a similar manner as mover section 84a, although being symmetrical. Between the two plate-like members 84b1 and 84b2, an end on the +Y side of stator section 94b is inserted in a non-contact manner. Inside each of plate-like members 84b1 and 84b2, magnet units 98b1 and 98b2 that are configured similar to magnet units 98a1 and 98a2 are housed.
Next, a configuration of fine movement stage drive system 64A (refer to
This will be explained further in detail. As it can be seen from
Incidentally, in the description below, while one of the stator sections 94a and mover sections 84a, which have coil unit CUa and magnet units 98a1 and 98a2, respectively, will be described using
Inside plate-like member 84a1 on the +Z side configuring apart of mover section 84a, as it can be seen when referring to
The plurality of permanent magnets 65a is placed in an arrangement where the magnets have a polarity which is alternately a reverse polarity to each other, as shown in
As shown in
Now, as shown in
Accordingly, in fine movement stage driving system 64A, as an example, when a clockwise electric current when viewed from the +Z direction is supplied to the upper part winding and the lower part winding of coils 1551 and 1553, respectively, as shown in
By supplying an electric current to coil 157, electromagnetic interaction is performed between permanent magnet 67 (67a, 67b) and fine movement stage WFS1 can be driven in the X-axis direction. Main controller 20 controls a position of fine movement stage WFS1 in the X-axis direction by controlling the current supplied to each coil.
Further, in fine movement stage driving system 64A, as an example, when a counterclockwise electric current when viewed from the +Z direction is supplied to the upper part winding of coil 1552 and a clockwise electric current when viewed from the +Z direction is supplied to the lower part winding as shown in
Further, in a state shown in
As is obvious from the description above, in the embodiment, main controller 20 drives fine movement stage WFS1 in the X-axis direction by supplying an electric current alternately to the plurality of XZ coils 155 and 157 that are arranged in the X-axis direction. Further, along with this, by supplying electric current to coils of XZ coils 155 and 157 that are not used to drive fine movement stage WFS1 in the X-axis direction, main controller 20 generates a drive force in the Z-axis direction separately from the drive force in the X-axis direction and makes fine movement stage WFS1 levitate from coarse movement stage WCS1. And, main controller 20 drives fine movement stage WFS1 in the X-axis direction while maintaining the levitated state of fine movement stage WFS1 with respect to coarse movement stage WCS1, namely a noncontact state, by sequentially switching the coil subject to current supply according to the position of fine movement stage WFS1 in the X-axis direction. Further, main controller 20 can drive fine movement stage WFS1 in the X-axis direction in a state where fine movement stage WFS1 is levitated from coarse movement stage WCS1, as well as independently drive the fine movement stage in the Y-axis direction.
Further, as shown in
Further, as shown in
Further, as shown in
Further, in the embodiment, by supplying electric current to the two lines of coils 155 and 157 (refer to
In other words, in the embodiment, a first driving section 164a (refer to
As it can be seen from the description above, in the embodiment, fine movement stage driving system 64A (first and second driving sections) supports fine movement stage WFS1 by levitation in a non-contact state with respect to coarse movement stage WCS1, and can also drive fine movement stage WFS1 in a non-contact manner in directions of six degrees of freedom (X, Y, Z, θx, θy, and θz) with respect to coarse movement stage WCS1.
Further, by applying a rotational force around the X-axis (a force in the ex direction) to each of the pair of mover sections 84a and 84b via the first and second driving sections 164a and 164b in directions opposite to each other, main controller 20 can deflect the center in the Y-axis direction of fine movement stage WFS1 in the +Z direction or the −Z direction (refer to the hatched arrow in
Further, when wafer W is deformed by its own weight and the like, while there is a risk that an area including an irradiation area (exposure area IA) of illumination light IL on the surface of wafer W mounted on fine movement stage WFS1 will no longer be within the range of the depth of focus of projection optical system by applying a rotational force around the X-axis in directions opposite to each other to the pair of mover sections 84a and 84b, respectively, via the first and second driving sections described above similar to when main controller 20 bends the center in the Y-axis direction of fine movement stage WFS1 in the +Z direction, wafer W can be deformed to be substantially flat, and the area including exposure area IA can be made to fall within the range of the depth of focus of projection optical system PL. Incidentally, while
On the wafer stage WST2 side as well, a fine movement stage driving system 64B (refer to
Fine movement stage WFS1 is movable in the X-axis direction, with a longer stroke compared with the directions of the other five degrees of freedom, along stator sections 94a and 94b arranged extending in the X-axis direction. The same applies to fine movement stage WFS2.
With the configuration as described above, fine movement stage WFS1 is movable in the directions of six degrees of freedom with respect to coarse movement stage WCS1. Further, on this operation, the law of action and reaction (the law of conservation of momentum) that is similar to the previously described one holds owing to the action of a reaction force by drive of fine movement stage WFS1. More specifically, coarse movement stage WCS1 functions as the countermass of fine movement stage WFS1, and coarse movement stage WCS1 is driven in a direction opposite to fine movement stage WFS1. Fine movement stage WFS2 and coarse movement stage WCS2 has the similar relation.
Incidentally, in the embodiment, as fine movement stage driving systems 64A and 64B, the planar motors of a moving magnet type are used, but the planar motors are not limited to this, and planar motors of a moving coil type in which the coil units are placed at the mover sections of the fine movement stages and the magnetic units are placed at the stator sections of the coarse movement stages can also be used.
Between coupling member 92a of coarse movement stage WCS1 and main section 80 of fine movement stage WFS1, as shown in
Power usage, here, is a generic term of power for various sensors and actuators such as motors, coolant for temperature adjustment to the actuators, pressurized air for air bearings and the like which is supplied from the outside to coupling member 92a via the tube carrier (not shown). In the case where a vacuum suction force is necessary, the force for vacuum (negative pressure) is also included in the power usage.
The tube carrier is arranged in a pair corresponding to wafer stages WST1 and WST2, respectively, and is actually placed each on a step portion formed at the end on the −X side and the +X side of base board 12 shown in
Next, a measuring system that measures positional information of wafer stages WST1 and WST2 is described. Exposure apparatus 100 has a fine movement stage position measuring system 70 (refer to
Fine movement stage position measuring system 70 has a measurement bar 71 shown in
The +Z side half (upper half) of measurement bar 71 is placed between second section 14A2 of surface plate 14A and second section 14B2 of surface plate 1413, and the −Z side half (lower half) is housed inside recessed section 12a formed at base board 12. Further, a predetermined clearance is formed between measurement bar 71 and each of surface plates 14A and 143 and base board 12, and measurement bar 71 is in a state noncontact with the members other than main frame BD. Measurement bar 71 is formed by a material with a relatively low coefficient of thermal expansion (e.g. invar, ceramics, or the like). Incidentally, the shape of measurement bar 71 is not limited in particular. For example, it is also possible that the measurement member has a circular cross section (a cylindrical shape), or a trapezoidal or triangle cross section. Further, the measurement bar does not necessarily have to be formed by a longitudinal member such as a bar-like member or a beam-like member.
At measurement bar 71, as shown in
As shown in
X head 75x, Y heads 75ya and 75yb and the three Z heads 76a to 76c are placed in a state where their positions do not vary, inside measurement bar 71. X head 75x is placed on reference axis LV, and Y heads 75ya and 75yb are placed at the same distance away from X head 75x, on the −X side and the +X side, respectively. In the embodiment, as each of the three encoder heads 75x, 75ya and 75yb, a diffraction interference type head is used which is a head having a configuration in which a light source, a photodetection system (including a photodetector) and various types of optical systems are unitized, similar to the encoder head disclosed in, for example, PCT International Publication No. 2007/083758 (the corresponding U.S. Patent Application Publication No. 2007/0288121) and the like.
When wafer stage WST1 (or WST2) is located directly under projection optical system PL (refer to
In this case, an irradiation point (detection point), on grating RG, of the measurement beam irradiated from X head 75x coincides with the exposure position that is the center of exposure area IA (refer to
As each of Z heads 76a to 76c, for example, a head of a displacement sensor by an optical method similar to an optical pickup used in a CD drive device or the like is used. The three Z heads 76a to 76c are placed at the positions corresponding to the respective vertices of an isosceles triangle (or an equilateral triangle). Z heads 76a to 76c each irradiate the lower surface of fine movement stage WFS1 (or WFS2) with a measurement beam parallel to the Z-axis from below, and receive reflected light reflected by the surface of the plate on which grating RG is formed (or the formation surface of the reflective diffraction grating). Accordingly, Z heads 76a to 76c configure a surface position measuring system 54 (refer to
The center of gravity of the isosceles triangle (or the equilateral triangle) whose vertices are at the three irradiation points on grating RG of the measurement beams respectively irradiated from the three Z heads 76a to 76c coincides with the exposure position that is the center of exposure area IA (refer to
The second measurement head group 73 has X head 77x that configures X liner encoder 55 (refer to
Incidentally, while each of X heads 75x and 77x and Y heads 75ya, 75yb, 77ya and 77yb of the embodiment has the light source, the photodetection system (including the photodetector) and the various types of optical systems (none of which are illustrated) that are unitized and placed inside measurement bar 71, the configuration of the encoder head is not limited thereto. For example, the light source and the photodetection system can be placed outside the measurement bar. In such a case, the optical systems placed inside the measurement bar, and the light source and the photodetection system are connected to each other via, for example, an optical fiber or the like. Further, a configuration can also be employed in which the encoder head is placed outside the measurement bar and only a measurement beam is guided to the grating via an optical fiber placed inside the measurement bar. Further, the rotational information of the wafer in the z direction can be measured using a pair of the X liner encoders (in this case, there should be one Y linear encoder). Further, the surface position information of the fine movement stage can be measured using, for example, an optical interferometer. Further, instead of the respective heads of first measurement head group 72 and second measurement head group 73, three encoder heads in total, which include at least one XZ encoder head whose measurement directions are the X-axis direction and the Z-axis direction and at least one YZ encoder head whose measurement directions are the Y-axis direction and the Z-axis direction, can be arranged in the placement similar to that of the X head and the pair of Y heads described earlier.
When wafer stage WST1 moves between exposure station 200 and measurement station 300 on surface plate 14A, coarse movement stage position measuring system 68A (refer to
Coarse movement stage position measuring system 68B (refer to
Next, relative position measuring systems 66A and 66B (refer to
As shown in
Encoder heads 17Ya1 and 17Ya2, and 17Xa are one-dimensional encoder heads whose measurement directions are in the Y-axis direction and the X-axis direction, respectively. Here, encoder heads 17Ya1 and 17Ya2 will be referred to as Y heads, and encoder head 17Xa will be referred to as an X head. In the embodiment, as Y heads 17Ya1 and 17Ya2, and X head 17Xa, heads with a configuration similar to heads 75x, 75ya, and 75yb previously described are employed.
As shown in
The separation distance of Y heads 17Ya1 and 17Ya2 in the X-axis direction, as an example, is substantially equal to (somewhat shorter than) the difference between twice the length of grating 17Ga and a movement stroke of fine movement stage WFS1 with respect to coarse movement stage WCS1. Therefore, in the case fine movement stage WFS1 is driven in the +X direction with respect to coarse movement stage WCS1 and reaches the +X end of the movement stroke, Y heads 17Ya1 and 17Ya2 and X head 17Xa face the vicinity of the −X end of grating 17Ga. Further, in the case fine movement stage WFS1 is driven in the −X direction with respect to coarse movement stage WCS1 and reaches the −X end of the movement stroke, Y heads 17Ya1 and 17Ya2 and X head 17Xa face the vicinity of the +X end of grating 17Ga. More specifically, in the total movement strokes of fine movement stage WFS1, Y heads 17Ya1 and 17Ya2, and X head 17Xa always face grating 17Ga.
Y heads 17Ya1 and 17Ya2 irradiate measurement beams on grating 17Ga facing the X heads, and by receiving the return lights (diffraction lights), measure the relative positional information of fine movement stage WFS1 in the Y-axis direction with respect to coarse movement stage WCS1. Similarly, X head 17Xa measures the relative positional information of fine movement stage WFS1 in the X-axis direction with respect to coarse movement stage WCS1. These measurements results are supplied to main controller 20 (refer to
Main controller 20 obtains the relative positional information in the XY plane between fine movement stage WFS1 and coarse movement stage WCS1, using the measurement results which have been supplied. Here, as is previously described, the irradiation points (more specifically, measurement points) of the measurement beams of Y heads 17Ya1 and 17Ya2 on grating 17Ga are distanced apart in the ±X direction, with the irradiation point (more specifically, the measurement point) of X head 17Xa as the center. Accordingly, the relative positional information of fine movement stage WFS1 in the Y-axis direction and the θz direction, with the measurement point of X head 17Xa serving as a reference point, is obtained from the measurement results of Y heads 17Ya1 and 17Ya2. Further, the relative positional information of fine movement stage WFS1 in the X-axis direction is obtained from the measurement results of X head 17Xa.
The second encoder system 17b is configured of two Y heads and one X head and a two-dimensional grating, similar to the first encoder system 17a. The two Y heads and one X head are placed on stator section 94b fixed to coarse movement stage WCS1, and the two-dimensional grating is placed on the −Z surface (of plate-like member 84b1) of mover section 84b fixed to the −Y end (of main section 80) of fine movement stage WFS1. These placements are symmetric to Y heads 17Ya1 and 17Ya2, and X head 17Xa and grating 17Ga configuring the first encoder system 17a, with respect to the X-axis which passes through the center of main section 80.
The measurement results of the two Y heads and one X head configuring the second encoder system 17b is also supplied to main controller 20 (refer to
Relative position measuring system 66B which measures the relative positional information between fine movement stage WFS2 and coarse movement stage WCS2 is configured in a similar manner as relative position measuring system 66A described above.
Main controller 20 obtains positional information (including the positional information in the θz direction) of coarse movement stages WCS1 and WCS2 in the XY plane, from the positional information of fine movement stages WFS1 and WFS2 measured using fine movement stage position measuring system 70 and from the relative positional information between fine movement stages WFS1 and WFS2 and coarse movement stages WCS1 and WCS2 which are measured using relative position measuring systems 66A and 66g. And, based on the results, main controller 20 controls the position of coarse movement stages WCS1 and WCS2. Especially at the time of exposure operation by the step-and-scan method to wafer W, main controller 20 steps and drives coarse movement stages WCS1 and WCS2 in a non-scanning direction on the movement operation (stepping operation between shots) between shot areas.
Incidentally, the relative position measuring system is not limited to the configuration described above. For example, the relative position measuring system can be configured using, for example, a gap sensor including a capacitance sensor instead of an encoder system.
Furthermore, although it is omitted in
Next, a parallel processing operation using the two wafer stages WST1 and WST2 is described with reference to
Main controller 20 performs the exposure operation by a step-and-scan method by repeating an inter-shot movement (stepping between shots) operation of moving wafer stage WST1 to a scanning starting position (acceleration starting position) for exposure of each shot area on wafer W, based on the results of wafer alignment (e.g. information obtained by converting an arrangement coordinate of each shot area on wafer W obtained by an Enhanced Global Alignment (EGA) into a coordinate with the second fiducial mark on measurement plate FM1 serving as a reference) and reticle alignment and the like that have been performed beforehand, and a scanning exposure operation of transferring a pattern formed on reticle R onto each shot area on wafer W by a scanning exposure method. During this step-and-scan operation, surface plates 14A and 14B exert the function as the countermasses, as described previously, according to movement of wafer stage WST1, for example, in the Y-axis direction, during scanning exposure. Further, main controller 20 gives the initial velocity to coarse movement stage WCS1 when driving fine movement stage WFS1 in the X-axis direction for the stepping operation between shots, and thereby coarse movement stage WCS1 functions as a local countermass with respect to fine movement stage WFS1. On this operation, an initial velocity can be given to coarse movement stage WCS1 which makes the stage move in the stepping direction at a constant speed. Such a driving method is described in, for example, U.S. Patent Application Publication No. 2008/0143994. Consequently, the movement of wafer stage WST1 (coarse movement stage WCS1 and fine movement stage WFS1) does not cause vibration of surface plates 14A and 14B and does not adversely affect wafer stage WST2.
The exposure operations described above are performed in a state where liquid Lq is held in the space between tip lens 191 and wafer W (wafer W and plate 82 depending on the position of a shot area), or more specifically, by liquid immersion exposure.
In exposure apparatus 100 of the embodiment, during a series of the exposure operations described above, main controller 20 measures the position of fine movement stage WFS1 using first measurement head group 72 of fine movement stage position measuring system 70 and controls the position of fine movement stage WFS1 (wafer W) based on this measurement result.
The wafer exchange is performed by unloading a wafer that has been exposed from fine movement stage WFS2 and loading a new wafer onto fine movement stage WFS2 by the wafer carrier mechanism that is not illustrated, when fine movement stage WFS2 is located at the second loading position. In this case, the second loading position is a position where the wafer exchange is performed on wafer stage WST2, and in the embodiment, the second loading position is to be set at the position where fine movement stage WFS2 (wafer stage WST2) is located such that measurement plate FM2 is positioned directly under primary alignment system AL1.
During the wafer exchange described above, and after the wafer exchange, while wafer stage WST2 stops at the second loading position, main controller 20 executes reset (resetting of the origin) of second measurement head group 73 of fine movement stage position measuring system 70, or more specifically, encoders 55, 56 and 57 (and surface position measuring system 58), prior to start of wafer alignment (and the other pre-processing measurements) with respect to the new wafer W.
When the wafer exchange (loading of the new wafer W) and the reset of encoders 55, 56 and 57 (and surface position measuring system 58) have been completed, main controller 20 detects the second fiducial mark on measurement plate FM2 using primary alignment system AL1. Then, main controller 20 detects the position of the second fiducial mark with the index center of primary alignment system AL1 serving as a reference, and based on the detection result and the result of position measurement of fine movement stage WFS2 by encoders 55, 56 and 57 at the time of the detection, computes the position coordinate of the second fiducial mark in the orthogonal coordinate system (alignment coordinate system) with reference axis La and reference axis LV serving as coordinate axes.
Next, main controller 20 performs the EGA while measuring the position coordinate of fine movement stage WFS2 (wafer stage WST2) in the alignment coordinate system using encoders 55, 56 and 57 (refer to
In this case, in conjunction with the movement operation of wafer stage WST2 in the Y-axis direction described above, alignment systems AL1 and AL22 to AL24 respectively detect a plurality of alignment marks (sample marks) disposed along the X-axis direction that are sequentially placed within the detection areas (e.g. corresponding to the irradiation areas of detection light). Therefore, on the measurement of the alignment marks described above, wafer stage WST2 is not driven in the X-axis direction.
Then, based on the position coordinates of the plurality of alignment marks arranged at the sample shot areas on wafer W and the design position coordinates, main controller 20 executes statistical computation (EGA computation) disclosed in, for example, U.S. Pat. No. 4,760,617 and the like, and computes the position coordinates (arrangement coordinates) of the plurality of shot areas in the alignment coordinate system.
Further, in exposure apparatus 100 of the embodiment, since measurement station 300 and exposure station 200 are spaced apart, main controller 20 subtracts the position coordinate of the second fiducial mark that has previously been detected from the position coordinate of each of the shot areas on wafer W that has been obtained as a result of the wafer alignment, thereby obtaining the position coordinates of the plurality of shot areas on wafer W with the position of the second fiducial mark serving as the origin.
Normally, the above-described wafer exchange and wafer alignment sequence is completed earlier than the exposure sequence. Therefore, when the wafer alignment has been completed, main controller 20 drives wafer stage WST2 in the +X direction to move wafer stage WST2 to a predetermined standby position on surface plate 14B. In this case, when wafer stage WST2 is driven in the +X direction, fine movement stage WFS2 moves out of a measurable range of fine movement stage position measuring system 70 (i.e. the respective measurement beams irradiated from second measurement head group 73 move off from grating RG). Therefore, based on the measurement values of fine movement stage position measuring system 70 (encoders 55, 56 and 57) and the measurement values of relative position measuring system 66B, main controller 20 obtains the position of coarse movement stage WCS2, and afterward, controls the position of wafer stage WST2 based on the measurement values of coarse movement stage position measuring system 68B. More specifically, position measurement of wafer stage WST2 within the XY plane is switched from the measurement using encoders 55, 56 and 57 to the measurement using coarse movement stage position measuring system 68B. Then, main controller 20 makes wafer stage WST2 wait at the predetermined standby position described above until exposure on wafer W on fine movement stage WFS1 is completed.
When the exposure on wafer W on fine movement stage WFS1 has been completed, main controller 20 starts to drive wafer stages WST1 and WST2 severally toward a right-side scrum position shown in
Further, in parallel with the movement of wafer stages WST1 and WST2 toward the right-side scrum position described above, main controller 20 drives fine movement stage WFS1 in the +X direction based on the measurement values of relative position measuring system 66A and causes fine movement stage WFS1 to be in proximity to or in contact with coarse movement stage WCS1, and also drives fine movement stage WFS2 in the −X direction based on the measurement values of relative position measuring system 66B and causes fine movement stage WFS2 to be in proximity to or in contact with coarse movement stage WCS2.
Then, in a state where both wafer stages WST1 and WST2 have moved to the right-side scrum position, wafer stage WST1 and wafer stage WST2 go into a scrum state of being in proximity or in contact in the X-axis direction, as shown in
As wafer stages WST1 and WST2 move in the −X direction while the three scrum states described above are kept, the liquid immersion area (liquid Lq) formed between tip lens 191 and fine movement stage WFS1 sequentially moves onto (is delivered to) fine movement stage WFS1, coupling member 92b of coarse movement stage WCS1, coupling member 92b of coarse movement stage WCS2, and fine movement stage WFS2.
When the movement of the liquid immersion area (liquid Lq) onto fine movement stage WFS2 has been completed, wafer stage WST1 has moved onto surface plate 14A. Then, main controller 20 moves wafer stage WST1 in the −Y direction and further in the +X direction on surface plate 14A, while measuring the position of wafer stage WST1 using coarse movement stage position measuring system 68A, so as to move wafer stage WST1 to the first loading position shown in
After wafer stage WST1 has reached the first loading position, main controller 20 switches position measurement of wafer stage WST1 within the XY plane from the measurement using coarse movement stage position measuring system 68A to the measurement using encoders 55, 56 and 57.
In parallel with the movement of wafer stage WST1 described above, main controller 20 drives wafer stage WST2 and sets the position of measurement plate FM2 at a position directly under projection optical system PL. Prior to this operation, main controller 20 has switched position measurement of wafer stage WST2 within the XY plane from the measurement using coarse movement stage position measuring system 68B to the measurement using encoders 51, 52 and 53. Then, the pair of first fiducial marks on measurement plate FM2 are detected using reticle alignment systems RA1 and RA2 and the relative position of projected images, on the wafer, of the reticle alignment marks on reticle R that correspond to the first fiducial marks are detected. Note that this detection is performed via projection optical system PL and liquid Lq that forms the liquid immersion area.
Based on the relative positional information detected as above and the positional information of each of the shot areas on wafer W with the second fiducial mark on fine movement stage WFS2 serving as a reference that has been previously obtained, main controller 20 computes the relative positional relation between the projection position of the pattern of reticle R (the projection center of projection optical system PL) and each of the shot areas on wafer W mounted on fine movement stage WFS2. While controlling the position of fine movement stage WFS2 (wafer stage WST2) based on the computation results, main controller 20 transfers the pattern of reticle R onto each shot area on wafer W mounted on fine movement stage WFS2 by a step-and-scan method, which is similar to the case of wafer W mounted on fine movement stage WFS1 described earlier.
In parallel with the above-described exposure operation on wafer W on fine movement stage WFS2, main controller 20 performs the wafer exchange between the wafer carrier mechanism (not illustrated) and wafer stage WST1 at the first loading position and mounts a new wafer W on fine movement stage WFS1. In this case, the first loading position is a position where the wafer exchange is performed on wafer stage WST1, and in the present embodiment, the first loading position is to be set at the position where fine movement stage WFS1 (wafer stage WST1) is located such that measurement plate FM1 is positioned directly under primary alignment system AL1.
Then, main controller 20 detects the second fiducial mark on measurement plate FM1 using primary alignment system AL1. Note that, prior to the detection of the second fiducial mark, main controller 20 executes reset (resetting of the origin) of second measurement head group 73 of fine movement stage position measuring system 70, or more specifically, encoders 55, 56 and 57 (and surface position measuring system 58), in a state where wafer stage WST1 is located at the first loading position. After that, main controller 20 performs wafer alignment (EGA) using alignment systems AL1 and AL21 to AL24, which is similar to the above-described one, with respect to wafer W on fine movement stage WFS1, while controlling the position of wafer stage WST1.
When the wafer alignment (EGA) with respect to wafer W on fine movement stage WFS1 has been completed and also the exposure on wafer W on fine movement stage WFS2 has been completed, main controller 20 drives wafer stages WST1 and WST2 toward a left-side scrum position. This left side scrum position refers to a positional relation in which wafer stages WST1 and WST2 are located at positions symmetrical to the right side scrum position shown in
At this left-side scrum position as well, wafer stage WST1 and wafer stage WST2 go into the scrum state described earlier, and concurrently with this state, fine movement stage WFS1 and coarse movement stage WCS1 go into the scrum state and coarse movement stage WCS2 and fine movement stage WFS2 go into the scrum state. Then, the upper surfaces of fine movement stage WFS1, coupling member 92b of coarse movement stage WCS1, coupling member 921, of coarse movement stage WCS2 and fine movement stage WFS2 form a fully flat surface that appears to be integrated.
Main controller 20 drives wafer stages WST1 and WST2 in the +X direction that is reverse to the previous direction, while keeping the three scrum states described above. According this drive, the liquid immersion area (liquid Lq) formed between tip lens 191 and fine movement stage WFS2 sequentially moves onto fine movement stage WFS2, coupling member 92b of coarse movement stage WCS2, coupling member 92b of coarse movement stage WCS1 and fine movement stage WFS1, which is reverse to the previously described order. As a matter of course, also when the wafer stages are moved while the scrum states are kept, the position measurement of wafer stages WST1 and WST2 is performed, similarly to the previously described case. When the movement of the liquid immersion area (liquid Lq) has been completed, main controller 20 starts exposure on wafer W on wafer stage WST1 in the procedure similar to the previously described procedure. In parallel with this exposure operation, main controller 20 drives wafer stage WST2 toward the second loading position in a manner similar to the previously described manner, exchanges wafer W that has been exposed on wafer stage WST2 with a new wafer W, and executes the wafer alignment with respect to the new wafer W.
After that, main controller 20 repeatedly executes the parallel processing operations using wafer stages WST1 and WST2 described above.
As described above, according to exposure apparatus 100 of the embodiment, fine movement stage WFS1 (or WFS2) is supported in a non-contact manner on a surface parallel to the XY plane by fine movement stage driving systems 64A and 64B, or more precisely by the first driving section 164a and the second driving section 164b that configure a part of fine movement stage driving systems 64A and 64B, respectively, so that fine movement stage WFS1 (or WFS2) is relatively movable with respect to coarse movement stage WCS1 (or WCS2). And, by the first driving section 164a and the second driving section 164b, driving forces in directions of six degrees of freedom (X, Y, Z, θx, θy and θz) are applied to one end and the other end in the Y-axis direction of fine movement stage WFS1 (or WFS2), respectively. Magnitude and generation direction of the drive force in each of the directions are controlled independently by main controller 20, by controlling the magnitude and/or the direction of the current supplied to each of the coils in coil units 98a1, 98a2, 98b1, and 98b2 previously described. Accordingly, not only can fine movement stage WFS1 (or WFS2) be driven in directions of six degrees of freedom, by the first and second driving sections, by making the first driving section 164a and the second driving section 164b apply drive forces simultaneously in directions opposite to each other in the θx direction to one end and the other end of fine movement stage WFS1 or WFS2) in the Y-axis direction, fine movement stage WFS1 (or WFS2) (and wafer W held by the stage) can be deformed to a concave shape or a convex shape within a plane (a YZ plane) perpendicular to the X-axis. In other words, in the case when fine movement stage WFS1 (or WFS2) (and wafer W which is held by the stage) is deformed by its own weight and the like, it becomes possible to suppress this deformation.
Further, in exposure apparatus 100 of the embodiment, by measuring the position (and the tilt) in the Z-axis direction of the wafer W surface using, for example, focus sensor AF, and deforming fine movement stage WFS1 (or WFS2) in the manner described above, based on the measurement results during the exposure operation via fine movement stage driving system 64A (or 64B), the position (and the tilt) of wafer W in the optical axis direction of projection optical system PL can be controlled (focus leveling control).
Further, in exposure apparatus 100 of the embodiment, during the exposure operation and during the wafer alignment (mainly, during the measurement of the alignment marks), first measurement head group 72 and second measurement head group 73 fixed to measurement bar 71 are respectively used in the measurement of the positional information (the positional information within the XY plane and the surface position information) of fine movement stage WFS1 (or WFS2) that holds wafer W. And, since encoder heads 75x, 75ya and 75yb and Z heads 76a to 76e that configure first measurement head group 72, and encoder heads 77x, 77ya and 77yb and Z heads 78a to 78c that configure second measurement head group 73 can respectively irradiate grating RG placed on the bottom surface of fine movement stage WFS1 (or WFS2) with measurement beams from directly below at the shortest distance, measurement error caused by temperature fluctuation of the surrounding atmosphere of wafer stage WST1 and WST2, e.g., air fluctuation is reduced, and high-precision measurement of the positional information of fine movement stage WFS1 and WFS2 can be performed.
Further, first measurement head group 72 measures the positional information within the XY plane and the surface position information of fine movement stage WFS1 (or WFS2) at the point that substantially coincides with the exposure position that is the center of exposure area IA on wafer W, and second measurement head group 73 measures the positional information within the XY plane and the surface position information of fine movement stage WFS2 (or WFS1) at the point that substantially coincides with the center of the detection area of primary alignment system AL1. Consequently, occurrence of the so-called Abbe error caused by the positional error within the XY plane between the measurement point and the exposure position is restrained, and also in this regard, high-precision measurement of the positional information of fine movement stage WFS1 or WFS2 can be performed.
Further, since measurement bar 71 that has first measurement head group 72 and second measurement head group 73 is fixed in a suspended state to main frame BD to which barrel 40 is fixed, it becomes possible to perform high-precision position control of wafer stage WST1 (or WST2) with the optical axis of projection optical system PL held by barrel 40 serving as a reference. Further, since measurement bar 71 is in a noncontact state with the members (e.g. surface plates 14A and 14B, base board 14, and the like) other than main frame BD, vibration or the like generated when surface plates 14A and 14B, wafer stages WST1 and WST2, and the like are driven does not travel. Consequently, it becomes possible to perform high-precision measurement of the positional information of wafer stage WST1 (or WST2), by using first measurement head group 72 and second measurement head group 73.
Further, according to exposure apparatus 100 of the embodiment, main controller 20 can drive fine movement stages WFS1 and WFS2 with good precision, based on highly precise measurement results of positional information of fine movement stages WFS1 and WFS2. Accordingly, main controller 20 can drive wafer W mounted on fine movement stages WFS1 and WFS2 in sync with reticle stage RST (reticle R) with good precision, and can transfer a pattern of reticle R on wafer W with good precision by scanning exposure.
Further, in wafer stages WST1 and WST2 in the present embodiment, since coarse movement stage WCS1 (or WCS2) is placed on the periphery of fine movement stage WFS1 (or WFS2) wafer stages WST1 and WST2 can be reduced in size in the height direction (Z-axis direction), compared with a wafer stage that has a coarse/fine movement configuration in which a fine movement stage is mounted on a coarse movement stage. Therefore, the distance in the Z-axis direction between the point of action of the thrust of the planar motors that configure coarse movement stage driving systems 62A and 62B (i.e. the point between the bottom surface of coarse movement stage WCS1 (WCS2) and the upper surfaces of surface plates 14A and 14B) and the center of gravity of wafer stages WST1 and WST2 can be decreased, and accordingly, the pitching moment (or the rolling moment) generated when wafer stages WST1 and WTS2 are driven can be reduced. Consequently, the operations of wafer stages WST1 and WST2 become stable.
Further, in exposure apparatus 100 of the embodiment, the surface plate that forms the guide surface used when wafer stages WST1 and WST2 move along the XY plane is configured of the two surface plates 14A and 14B so as to correspond to the two wafer stages WST1 and WST2. These two surface plates 14A and 14B independently function as the countermasses when wafer stages WST1 and WST2 are driven by the planar motors (coarse movement stage driving systems 62A and 62B), and therefore, for example, even when wafer stage WST1 and wafer stage WST2 are respectively driven in directions opposite to each other in the Y-axis direction on surface plates 14A and 14B, surface plates 14A and 14B can individually cancel the reaction forces respectively acting on the surface plates.
Incidentally, while the exposure apparatus of the embodiment above has the two surface plates corresponding to the two wafer stages, the number of the surface plates is not limited thereto, and one surface plate or three or more surface plates can be employed. Further, the number of the wafer stages is not limited to two, but one wafer stage or three or more wafer stages can be employed, and a measurement stage, for example, which has an aerial image measuring instrument, an uneven illuminance measuring instrument, an illuminance monitor, a wavefront aberration measuring instrument and the like, can be placed on the surface plate, which is disclosed in, for example, U.S. Patent Application Publication No. 2007/201010.
Further, the position of the border line that separates the surface plate or the base member into a plurality of sections is not limited to the position as in the embodiment above. While the border line is set as the line that includes reference axis LV and intersects optical axis AX in the embodiments above, the border line can be set at another position, for example, in the case where, if the boundary is located in the exposure station, the thrust of the planar motor at the portion where the boundary is located weakens.
Further, the motor to drive surface plates 14A and 14B on base board 12 is not limited to the planar motor by the electromagnetic force (Lorentz force) drive method, but for example, can be a planar motor (or a linear motor) by a variable magnetoresistance drive method. Further, the motor is not limited to the planar motor, but can be a voice coil motor that includes a mover fixed to the side surface of the surface plate and a stator fixed to the base board. Further, the surface plates can be supported on the base board via the empty-weight canceller as disclosed in, for example, U.S. Patent Application Publication No. 2007/0201010 and the like. Further, the drive directions of the surface plates are not limited to the directions of three degrees of freedom, but for example, can be the directions of six degrees of freedom, only the Y-axis direction, or only the XY two-axial directions. In this case, the surface plates can be levitated above the base board by static gas bearings (e.g. air bearings) or the like. Further, in the case where the movement direction of the surface plates can be only the Y-axis direction, the surface plates can be mounted on, for example, a Y guide member arranged extending in the Y-axis direction so as to be movable in the Y-axis direction.
Further, in the embodiment above, while the grating is placed on the lower surface of the fine movement stage, i.e., the surface that is opposed to the upper surface of the surface plate, the placement is not limited to this, and the main section of the fine movement stage is made up of a solid member that can transmit light, and the grating can be placed on the upper surface of the main section. In this case, since the distance between the wafer and the grating is closer compared with the embodiment above, the Abbe error, which is caused by the difference in the Z-axis direction between the surface subject to exposure of the wafer that includes the exposure point and the reference surface (the placement surface of the grating) of position measurement of the fine movement stage by encoders 51, 52 and 53, can be reduced. Further, the grating can be formed on the back surface of the wafer holder. In this case, even if the wafer holder expands or the attachment position with respect to the fine movement stage shifts during exposure, the position of the wafer holder (wafer) can be measured according to the expansion or the shift.
Further, in the embodiment above, while the case has been described as an example where the encoder system is equipped with the X head and the pair of Y heads, the arrangement is not limited to this, and for example, one or two two-dimensional heads) (2D head (s)) whose measurement directions are the two directions that are the X-axis direction and the Y-axis direction can be placed inside the measurement bar. In the case of arranging the two 2D heads, their detection points can be set at the two points that are spaced apart in the X-axis direction at the same distance from the exposure position as the center, on the grating. In the embodiment above, while the number of the heads is one X head and two Y heads, the number of the heads can further be increased. Further, in the embodiment above, while the number of the heads per head group is one X head and two Y heads, the number of the heads can further be increased. Moreover, first measurement head group 72 on the exposure station 300 side can further have a plurality of head groups. For example, on each of the sides (the four directions that are the +X, +Y, −X and −Y directions) on the periphery of the head group placed at the position corresponding to the exposure position (a shot area being exposed on wafer W), another head group can be arranged. And, the position of the fine movement stage (wafer W) just before exposure of the shot area can be measured in a so-called read-ahead manner. Further, the configuration of the encoder system that configures fine movement stage position measuring system 70 is not limited to the one in the embodiment above and an arbitrary configuration can be employed. For example, a 3D head can also be used that is capable of measuring the positional information in each direction of the X-axis, the Y-axis and the Z-axis.
Further, in the embodiment above, the measurement beams emitted from the encoder heads and the measurement beams emitted from the Z heads are irradiated on the gratings of the fine movement stages via a gap between the two surface plates or the light-transmitting section formed at each of the surface plates. In this case, as the light-transmitting section, holes each of which is slightly larger than a beam diameter of each of the measurement beams are formed at each of surface plates 14A and 14B taking the movement range of surface plate 14A or 14B as the countermass into consideration, and the measurement beams can be made to pass through these multiple opening sections. Further, for example, it is also possible that pencil-type heads are used as the respective encoder heads and the respective Z heads, and opening sections in which these heads are inserted are formed at each of the surface plates.
Incidentally, in the embodiment above, the case has been described as an example where according to employment of the planar motors as coarse movement stage driving systems 62A and 62B that drive wafer stages WST1 and WST2, the guide surface (the surface that generates the force in the Z-axis direction) used on the movement of wafer stages WST1 and WST2 along the XY plane is formed by surface plates 14A and 14B that have the stator sections of the planar motors. However, the embodiment above is not limited thereto. Further, in the embodiment above, while the measurement surface (grating RG) is arranged on fine movement stages WFS1 and WFS2 and first measurement head group 72 (and second measurement head group 73) composed of the encoder heads (and the Z heads) is arranged at measurement bar 71, the embodiment above is not limited thereto. More specifically, reversely to the above-described case, the encoder heads (and the Z heads) can be arranged at fine movement stage WFS1 and the measurement surface (grating RG) can be formed on the measurement bar 71 side. Such a reverse placement can be applied to a stage device that has a configuration in which a magnetic levitated stage is combined with a so-called H-type stage, which is employed in, for example, an electron beam exposure apparatus, an EUV exposure apparatus or the like. In this stage device, since a stage is supported by a guide bar, a scale bar (which corresponds to the measurement bar on the surface of which a diffraction grating is formed) is placed below the stage so as to be opposed to the stage, and at least a part (such as an optical system) of an encoder head is placed on the lower surface of the stage that is opposed to the scale bar. In this case, the guide bar configures the guide surface forming member. As a matter of course, another configuration can also be employed. The place where grating RG is arranged on the measurement bar 71 side can be, for example, measurement bar 71, or a plate of a nonmagnetic material or the like that is arranged on the entire surface or at least one surface on surface plate 14A (14B).
Further, the mid portion (which can be arranged at a plurality of positions) in the longitudinal direction of measurement bar 71 can be supported on the base board by an empty-weight canceller as disclosed in, for example, U.S. Patent Application Publication No. 2007/0201010.
Incidentally, in the embodiment above, since measurement bar 71 is integrally fixed to main frame BD, there is a possibility that twist or the like occurs in measurement bar 71 owing to inner stress (including thermal stress) and the relative position between measurement bar 71 and main frame BD varies. Therefore, as the countermeasure taken in such as case, it is also possible that the position of measurement bar 71 (the relative position with respect to main frame BD, or the variation of the position with respect to a reference position) is measured, and the position of measurement bar 71 is finely adjusted by an actuator or the like, or the measurement result is corrected.
Further, in the embodiment above, while the case has been described where measurement bar 71 and main frame BD are integrated, this arrangement is not limited, and measurement bar 71 and main frame BD can physically be separated. In such a case, a measurement device (e.g. an encoder and/or an interferometer, or the like) that measures the position (or displacement) of measurement bar 71 with respect to main frame BD (or a reference position), and an actuator or the like that adjusts the position of measurement bar 71 should be arranged, and based on the measurement result of the measurement device, main controller 20 and/or another controller should maintain the positional relation between main frame BD (and projection optical system n) and measurement bar 71 in a predetermined relation (e.g. constant).
Further, a measuring system (sensor) that measures variation of measurement bar 71 with an optical method, a temperature sensor, a pressure sensor, an acceleration sensor for vibration measurement, and the like can be arranged at measurement bar 71. Or, a distortion sensor (distortion gauge), or a displacement sensor and the like to measure variation of measurement bar 71 can be arranged. Then, it is also possible to correct the positional information obtained by fine movement stage position measuring system 70 and/or coarse movement stage position measuring systems 68A and 68B, using the values obtained by these sensors.
Further, in the embodiment above, the case has been described where the liquid immersion area (liquid Lq) is constantly maintained below projection optical system PL by delivering the liquid immersion area (liquid Lq) between fine movement stage WFS1 and fine movement stage WFS2 via coupling members 92b that coarse movement stages WCS1 and WCS2 are respectively equipped with. However, the arrangement is not limited to this, and it is also possible that the liquid immersion area (liquid Lq) is constantly maintained below projection optical system PL by moving a shutter member (not illustrated) having a configuration similar to the one disclosed in, for example, the third embodiment of U.S. Patent Application Publication No. 2004/0211920, to below projection optical system PL in exchange of wafer stages WST1 and WST2.
Further, while the case has been described where the embodiment above is applied to stage device (wafer stages) 50 of the exposure apparatus, the arrangement is not limited to this, and the embodiment above can also be applied to reticle stage RST. Incidentally, in the embodiment above, grating RG can be covered with a protective member, e.g. a cover glass, so as to be protected. The cover glass can be arranged to cover the substantially entire surface of the lower surface of main section 80, or can be arranged to cover only a part of the lower surface of main section 80 that includes grating RG. Further, while a plate-shaped protective member is desirable because the thickness enough to protect grating RG is required, a thin film-shaped protective member can also be used depending on the material. Besides, it is also possible that a transparent plate, on one surface of which grating RG is fixed or formed, has the other surface that is placed in contact with or in proximity to the back surface of the wafer holder and a protective member (cover glass) is arranged on the one surface side of the transparent plate, or the one surface of the transparent plate on which grating RG is fixed or formed is placed in contact with or in proximity to the back surface of the wafer holder without arranging the protective member (cover glass). Especially in the former case, grating RG can be fixed or formed on an opaque member such as ceramics instead of the transparent plate, or grating RG can be fixed or formed on the back surface of the wafer holder. In the latter case, even if the wafer holder expands or the attachment position with respect to the fine movement stage shifts during exposure, the position of the wafer holder (wafer) can be measured according to the expansion or the shift. Or, it is also possible that the wafer holder and grating RG are merely held by the conventional fine movement stage. Further, it is also possible that the wafer holder is formed by a solid glass member, and grating n is placed on the upper surface (wafer mounting surface) of the glass member. Incidentally, in the embodiment above, while the case has been described as an example where the wafer stage is a coarse/fine movement stage that is a combination of the coarse movement stage and the fine movement stage, the present invention is not limited to this. Further, in the embodiment above, while fine movement stages WFS1 and WFS2 can be driven in all the directions of six degrees of freedom, the present invention is not limited to this, and the fine movement stages should be moved at least within the two-dimensional plane parallel to the XY plane. Moreover, fine movement stages WFS1 and WFS2 can be supported in a contact manner by coarse movement stages WCS1 and WCS2. Consequently, the fine movement stage driving system to drive fine movement stage WFS1 or WFS2 with respect to coarse movement stage WCS1 or WCS2 can be a combination of a rotary motor and a ball screw (or a feed screw). Incidentally, the fine movement stage position measuring system can be configured such that the position measurement can be performed in the entire area of the movement range of the wafer stages. In such a case, the coarse movement stage position measuring systems become unnecessary. Incidentally, the wafer used in the exposure apparatus of the embodiment above can be any one of wafers with various sizes, such as a 450-mm wafer or a 300-mm wafer.
Incidentally, in the embodiment above, while the case has been described where the exposure apparatus is the liquid immersion type exposure apparatus, the present invention is not limited to this, and the embodiment above can suitably be applied to a dry type exposure apparatus that performs exposure of wafer W without liquid (water).
Incidentally, in the embodiment above, while the case has been described where the exposure apparatus is a scanning stepper, the present invention is not limited to this, and the embodiment above can also be applied to a static exposure apparatus such as a stepper. Even in the stepper or the like, occurrence of position measurement error caused by air fluctuation can be reduced to almost zero by measuring the position of a stage on which an object that is subject to exposure is mounted using an encoder. Therefore, it becomes possible to set the position of the stage with high precision based on the measurement values of the encoder, and as a consequence, high-precision transfer of a reticle pattern onto the object can be performed. Further, the embodiment above can also be applied to a reduced projection exposure apparatus by a step-and-stitch method that synthesizes a shot area and a shot area.
Further, the magnification of the projection optical system in the exposure apparatus in the embodiment above is not only a reduction system, but also can be either an equal magnifying system or a magnifying system, and the projection optical system is not only a dioptric system, but also can be either a catoptric system or a catadioptric system, and in addition, the projected image can be either an inverted image or an erected image.
Further, illumination light IL is not limited to ArF excimer laser light (with a wavelength of 193 nm), but can be ultraviolet light such as KrF excimer laser light (with a wavelength of 248 nm), or vacuum ultraviolet light such as F2 laser light (with a wavelength of 157 nm). As disclosed in, for example, U.S. Pat. No. 7,023,610, a harmonic wave, which is obtained by amplifying a single-wavelength laser beam in the infrared or visible range emitted by a DFB semiconductor laser or fiber laser with a fiber amplifier doped with, for example, erbium (or both erbium and ytterbium), and by converting the wavelength into ultraviolet light using a nonlinear optical crystal, can also be used as vacuum ultraviolet light.
Further, in the embodiment above, illumination light IL of the exposure apparatus is not limited to the light having a wavelength more than or equal to 100 nm, and it is needless to say that the light having a wavelength less than 100 nm can be used. For example, the embodiment above can be applied to an EUV (Extreme Ultraviolet) exposure apparatus that uses an EUV light in a soft X-ray range (e.g. a wavelength range from 5 to 15 nm). In addition, the embodiment above can also be applied to an exposure apparatus that uses charged particle beams such as an electron beam or an ion beam.
Further, in the embodiment above, a light transmissive type mask (reticle) is used, which is obtained by forming a predetermined light-shielding pattern (or a phase pattern or a light-attenuation pattern) on a light-transmitting substrate, but instead of this reticle, as disclosed in, for example, U.S. Pat. No. 6,778,257, an electron mask (which is also called a variable shaped mask, an active mask or an image generator, and includes, for example, a DMD (Digital Micromirror Device) that is a type of a non-emission type image display element (spatial light modulator) or the like) on which a light-transmitting pattern, a reflection pattern, or an emission pattern is formed according to electronic data of the pattern that is to be exposed can also be used. In the case of using such a variable shaped mask, a stage on which a wafer, a glass plate or the like is mounted is scanned relative to the variable shaped mask, and therefore the equivalent effect to the embodiment above can be obtained by measuring the position of this stage using an encoder system.
Further, as disclosed in, for example, PCT International Publication No. 2001/035168, the embodiment above can also be applied to an exposure apparatus (a lithography system) in which line-and-space patterns are formed on wafer W by forming interference fringes on wafer W.
Moreover, the embodiment above can also be applied to an exposure apparatus that synthesizes two reticle patterns on a wafer via a projection optical system and substantially simultaneously performs double exposure of one shot area on the wafer by one scanning exposure, as disclosed in, for example, U.S. Pat. No. 6,611,316.
Incidentally, an object on which a pattern is to be formed (an object subject to exposure on which an energy beam is irradiated) in the embodiment above is not limited to a wafer, but may be another object such as a glass plate, a ceramic substrate, a film member, or a mask blank.
The usage of the exposure apparatus is not limited to the exposure apparatus used for manufacturing semiconductor devices, but the embodiment above can be widely applied also to, for example, an exposure apparatus for manufacturing liquid crystal display elements in which a liquid crystal display element pattern is transferred onto a rectangular glass plate, and to an exposure apparatus for manufacturing organic EL, thin-film magnetic heads, imaging devices (such as CCDs), micromachines, DNA chips or the like. Further, the embodiment above can also be applied to an exposure apparatus that transfers a circuit pattern onto a glass substrate, a silicon wafer or the like not only when producing microdevices such as semiconductor devices, but also when producing a reticle or a mask used in an exposure apparatus such as an optical exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, and an electron beam exposure apparatus.
Incidentally; the disclosures of all publications, the PCT International Publications, the U.S. patent application Publications and the U.S. patents that are cited in the description so far related to exposure apparatuses and the like are each incorporated herein by reference.
Electron devices such as semiconductor devices are manufactured through the following steps: a step where the function/performance design of a device is performed; a step where a reticle based on the design step is manufactured; a step where a wafer is manufactured using a silicon material; a lithography step where a pattern of a mask (the reticle) is transferred onto the wafer with the exposure apparatus (pattern formation apparatus) of the embodiment described earlier and the exposure method thereof; a development step where the exposed wafer is developed; an etching step where an exposed member of an area other than an area where resist remains is removed by etching; a resist removing step where the resist that is no longer necessary when the etching is completed is removed; a device assembly step (including a dicing process, a bonding process, and a packaging process); an inspection step; and the like. In this case, in the lithography step, the exposure method described earlier is executed using the exposure apparatus of the embodiment above and device patterns are formed on the wafer, and therefore, the devices with high integration degree can be manufactured with high productivity.
While the above-described embodiment of the present invention is the presently preferred embodiment thereof, those skilled in the art of lithography systems will readily recognize that numerous additions, modifications, and substitutions may be made to the above-described embodiment without departing from the spirit and scope thereof. It is intended that all such modifications, additions, and substitutions fall within the scope of the present invention, which is best defined by the claims appended below.
This non-provisional application claims the benefit of Provisional Application No. 61/247,133 filed Sep. 30, 2009, the disclosure of which is hereby incorporated herein by reference in its entirety.
Number | Date | Country | |
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61247133 | Sep 2009 | US |