Flip-chip semiconductor device and method for fabricating the same

Abstract

A flip-chip semiconductor device and a method for fabricating the same are provided. A first underfill material with a low Young's modulus is applied to corners of a chip mounting area defined on a substrate. A chip is mounted on and electrically connected to the chip mounting area by a plurality of conductive bumps, allowing the first underfill material to encapsulate corners of the chip. A second underfill material with a high Young's modulus is used to fill a gap between the chip and the substrate to protect the conductive bumps and support the chip.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention can be more fully understood by reading the following detailed description of the preferred embodiments, with reference made to the accompanying drawings, wherein:

FIG. 1A (PRIOR ART) is a plan view of a conventional flip-chip semiconductor package;

FIG. 1B (PRIOR ART) is a cross-sectional view of the conventional flip-chip semiconductor package; and

FIGS. 2A to 2E are schematic diagrams of a flip-chip semiconductor device and a method for fabricating the same according to the present invention.

Claims

1. A method for fabricating a flip-chip semiconductor device, the method comprising the steps of: providing a substrate defined with at least one chip mounting area thereon and applying a first underfill material to corners of the chip mounting area;mounting and electrically connecting at least one chip to the chip mounting area of the substrate via a plurality of conductive bumps, wherein the first underfill material is disposed between corners of the chip and the substrate; andfilling a second underfill material into a gap between the chip and the substrate.

2. The method of claim 1, wherein the first underfill material has a smaller Young's modulus than that of the second underfill material.

3. The method of claim 1, wherein a plurality of bond pads are formed within the chip mounting area of the substrate, and the plurality of conductive bumps are bonded to the bond pads and are reflowed so as to electrically connect the chip to the bond pads.

4. The method of claim 1, wherein the first underfill material is a material with a low Young's modulus.

5. The method of claim 1, wherein the first underfill material has a glass transition temperature (Tg) lower than 80° C.

6. The method of claim 1, wherein the second underfill material is a material with a high Young's modulus.

7. The method of claim 1, wherein the second underfill material has a glass transition temperature (Tg) higher than 80° C.

8. The method of claim 1, wherein the second underfill material encapsulates the conductive bumps.

9. A flip-chip semiconductor device comprising: a substrate defined with at least one chip mounting area thereon;at least one chips mounted on and electrically connected to the chip mounting area of the substrate by a plurality of conductive bumps;a first underfill material applied to corners of the chip mounting area and disposed between corners of the chip and the substrate; anda second underfill material filling a gap between the chip and the substrate.

10. The flip-chip semiconductor device of claim 9, wherein the first underfill material has a smaller Young's modulus than that of the second underfill material.

11. The flip-chip semiconductor device of claim 9, wherein the substrate further comprises a plurality of bond pads formed within the chip mounting area, such that the plurality of conductive bumps are bonded to the bond pads and are reflowed so as to electrically connect the chip to the bond pads.

12. The flip-chip semiconductor device of claim 9, wherein the first underfill material is a material with a low Young's modulus.

13. The flip-chip semiconductor device of claim 9, wherein the first underfill material has a glass transition temperature (Tg) lower than 80° C.

14. The flip-chip semiconductor device of claim 9, wherein the second underfill material is a material with a high Young's modulus.

15. The flip-chip semiconductor device of claim 9, wherein the second underfill material has a glass transition temperature (Tg) higher than 80° C.

16. The flip-chip semiconductor device of claim 9, wherein the conductive bumps are encapsulated by the second underfill material.