Patent Grant
11469084
The latest generation of plasma enhanced chemical vapor deposition (PECVD) processes require increased high frequency electrical power. This increased power requirement exceeds the limits of existing electrical connectors and conductors. High ambient temperatures and heating from electrical current traveling through conductors and connections contribute to create a temperature condition in excess of the capabilities of commonly used components.
The electrical connections for some current PECVD processes use screw threads and preloaded spring washers. One limitation of threaded electrical connections is that the threads provide a poor, non-repeatable electrical contact area. This causes more electrical resistive heating of the connection. Another limitation of threaded electrical connections is that the threads of the radio frequency (RF) pedestal rod are extremely fragile and can be tightened with just a light torque, otherwise the threads are damaged. This light torque cannot provide the electrical contact needed for a high power electrical connection.
Other commercially available electrical connectors rely on spring force to make the electrical contact. These connectors can be used at temperatures up to about 150 to 200 degrees Celsius. In PECVD processes requiring increased high frequency power, the environment in which the electrical connector must function can be in the range from 300 to 350 degrees Celsius because a ceramic pedestal is typically used in such processes.
It is in this context that embodiments arise.
In an example embodiment, a thermal choke rod for use in connecting a radio frequency (RF) source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod that is coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment, which has an inner diameter, extends between the first and second connectors. The first connector has an inner surface that is a continuation of an inner surface of the tubular segment, with the first connector having a conically-shaped end region that tapers away from the inner surface of the first connector to an outer surface of the first connector in a direction toward the tubular segment. The first connector has a plurality of slits formed through a wall thickness of the first connector along a prescribed distance from a terminal end of the first connector. An outer surface of the tubular segment has a threaded region proximate to the first connector for threaded engagement with an annular cap configured to fit over the first connector and reduce an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.
In one embodiment, the annular cap has an inner threaded region for threaded engagement with the threaded region proximate to the first connector, and an inner tapered wall that is configured to mate with the conically-shaped end region of the first connector. In one embodiment, the second connector has an inner threaded region and the thermal choke rod further includes a threaded mechanical fastener that is configured to connect the RF strap to the second connector of the thermal choke rod. In one embodiment, the threaded mechanical fastener is either a bolt or a machine screw.
In one embodiment, the thermal choke rod is formed of a base material having a low thermal conductivity, and the base material is plated with a highly electrically conductive material. In one embodiment, the base material having a low thermal conductivity comprises stainless steel or a nickel-chromium-based superalloy, and the highly electrically conductive material plated on the base material comprises gold.
In another example embodiment, a plasma processing system is provided. The plasma processing system includes a radio frequency (RF) input rod having a first end connected to a plasma processing chamber and a second end for receiving RF signals from an RF source. The system also includes a thermal choke rod having a first connector, a second connector, and a tubular segment extending between the first and second connectors. The first connector has an inner surface that is a continuation of an inner surface of the tubular segment. Further, the first connector has a conically-shaped end region that tapers away from the inner surface of the first connector to an outer surface of the first connector in a direction toward the tubular segment. The first connector also has a plurality of slits formed through a wall thickness of the first connector along a prescribed distance from a terminal end of the first connector. An outer surface of the tubular segment has a threaded region proximate to the first connector. The first connector is configured to receive the second end of the RF input rod, and the second connector is configured to connect to an RF strap. An annular cap is configured to fit over the first connector and reduce an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector. The system also includes an RF source coupled to the RF strap.
In one embodiment, the plasma processing chamber includes a processing region, and the plasma processing system further includes a substrate support disposed in the chamber below the processing region. In this embodiment, the RF input rod is coupled to the substrate support.
In one embodiment, the annular cap has an inner threaded region for threaded engagement with the threaded region proximate to the first connector, and an inner tapered wall that is configured to mate with the conically-shaped end region of the first connector. In one embodiment, the second connector has an inner threaded region and the thermal choke rod further includes a threaded mechanical fastener that is configured to connect the RF strap to the second connector of the thermal choke rod. In one embodiment, the threaded mechanical fastener is either a bolt or a machine screw.
In one embodiment, the thermal choke rod is formed of a base material having a low thermal conductivity, and the base material is plated with a highly electrically conductive material. In one embodiment, the base material having a low thermal conductivity comprises stainless steel or a nickel-chromium-based superalloy, and the highly electrically conductive material plated on the base material comprises gold.
In yet another example embodiment, a method for connecting a radio frequency (RF) source to a plasma processing chamber is provided. The method includes providing a thermal choke rod having a first connector, a second connector, and a tubular segment extending between the first and second connectors, with the first connector having an inner surface that is a continuation of an inner surface of the tubular segment. The method also includes inserting a first end portion of a radio frequency (RF) input rod into the first connector of the thermal choke rod and positioning the first end portion of the RF input rod at a prescribed location within the thermal choke rod, with the RF input rod having a second end portion coupled to a plasma processing chamber. Further, the method includes compressing the first connector to reduce an inner diameter of the first connector and cause an inner surface of the first connector to contact and press upon an outer surface of the RF input rod so as to be mechanically secured to the RF input rod. The method also includes attaching a radio frequency (RF) strap to the second connector of the thermal choke rod, with the RF strap being coupled to an RF source.
In one embodiment, the providing of the thermal choke rod includes providing a thermal choke rod comprised of a base material having a low thermal conductivity, and the base material is plated with a highly electrically conductive material. In one embodiment, the base material having a low thermal conductivity comprises stainless steel or a nickel-chromium-based superalloy, and the highly electrically conductive material plated on the base material comprises gold.
In one embodiment, the compressing of the first connector to reduce an inner diameter of the first connector includes contacting a tapered surface provided at an end region of the first connector with a tapered surface that is configured to mate with the tapered surface provided at the end region of the first connector. In one embodiment, the tapered surface that is configured to mate with the tapered surface provided at the end region of the first connector is an inner surface of an annular cap configured to fit over the first connector.
In one embodiment, the prescribed location within the thermal choke rod at which the first end portion of the RF input rod is positioned includes the first connector and a portion of the tubular segment. In one embodiment, the attaching of the RF strap to the second connector of the thermal choke rod includes attaching a mechanical fastener to the second connector of the thermal choke rod.
Other aspects and advantages of the disclosures herein will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, which illustrate by way of example the principles of the disclosures.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the example embodiments. However, it will be apparent to one skilled in the art that the example embodiments may be practiced without some of these specific details. In other instances, process operations and implementation details have not been described in detail, if already well known.
Embodiments of the present invention provide a thermal choke rod having a collet connection that provides a strong clamping force for electrically connecting a radio frequency (RF) input rod to an RF source. The thermal choke rod also serves to isolate the high heat generated by the pedestal and electrical current resistive heating from sensitive electrical components located upstream. This thermal functionality is accomplished by forming the thermal choke rod from a base material having a low thermal conductivity and the capability to withstand high temperatures. To provide the thermal choke rod with the electrical conductivity needed to conduct electrical power, the base material is used in conjunction with a highly electrically conductive material, which, in one embodiment, is plated on the base material.
A radio frequency (RF) strap 118 is also connected to thermal choke rod 116. The RF strap 118 is coupled to impedance matching network 120 via a suitable wire connector. Radio frequency (RF) generator system 122, which includes one or more RF generators, is coupled to impedance matching network 120 via a suitable wire connector. In operation, RF generator system 122 generates an RF signal that is transmitted to an input of impedance matching network 120. The impedance matching network 120 matches the impedance of a load coupled to an output of the matching network with the impedance of a source coupled to an input of the matching network and generates a modified RF signal. The modified RF signal is transmitted from the impedance matching network 120 to the thermal choke rod 116 via the wire connector and the RF strap 118. The modified RF signal (RF current) is then conducted, for the most part, along the outer surface of the thermal choke rod 116 and is transmitted to the RF input rod 114 via the electrical connection created where the thermal choke rod contacts the RF input rod, as will be explained in more detail below with reference to
The end region of the first connector 116-1 has a conical shape that tapers away from the inner surface of the first connector to an outer surface of the first connector in a direction toward the tubular segment 116x. In one embodiment, the surface 116-1z of the conically-shaped end region is disposed at an angle of about 10 degrees to about 30 degrees relative to a horizontal reference line. To enable threaded engagement with annular cap 116a, the outer surface of the tubular segment 116x is provided with a threaded region 116x-1 proximate or near to the first connector 116-1. In the example of
The annular cap 116a is configured to fit over the first connector 116-1 and reduce the inner diameter thereof to create a firm connection between the first connector and the RF input rod 114. The annular cap 116a has an inner threaded region 116a-1 for threaded engagement with the threaded region 116x-1 on the outer surface of tubular segment 116x. The annular cap 116a also has an inner tapered wall 116a-w that is configured to mate with the surface 116-1z of the conically-shaped end region of the first connector 116-1. In one embodiment, the inner tapered wall 116a-w is disposed at an angle of about 10 degrees to about 30 degrees relative to a horizontal reference line.
To connect the RF input rod 114 to the thermal choke rod 116, the RF input rod is inserted through the central opening of the annular cap 116a while the annular cap is either separated from the thermal choke rod or is loosely threaded over the first connector 116-1. An end portion of the RF input rod 114 is then inserted into the first connector 116-1 and positioned at a prescribed location within the thermal choke rod. In the example shown in
With continuing reference to
The length of the contact region in which the inner surface of the first connector 116-1 and the outer surface of the RF input rod 114 are pressed into contact can be varied by changing the size and shape of the conically-shaped end region of the first connector and making corresponding changes to the angle of the inner tapered wall 116a-w of the annular cap 116a. Thus, in other embodiments, the length of the contact region can be longer than the length of contact region CR1 shown in
The brackets shown on the left side of
In addition to providing improved electrical contact with the RF input rod, the thermal choke rod also serves to isolate the high heat generated by the pedestal and electrical current resistive heating from sensitive electrical components located upstream. This thermal functionality is accomplished by forming the thermal choke rod from a base material which has a low thermal conductivity and is capable of withstanding high temperatures. In one embodiment, the base material having a low thermal conductivity is formed of stainless steel or a nickel-chromium-based superalloy. Examples of these materials include Type 316L stainless steel and superalloys commercially available under the trade names INCONEL®, HAYNES®, and HASTELLOY®. In one embodiment, the base material is chosen to match the thermal mechanical properties, e.g., coefficient of thermal expansion, of the RF input rod. By matching the coefficients of thermal expansion, the risk of the connection between the thermal choke rod and the RF input rod becoming loosened at high temperatures is minimized. To further reduce heat transfer, the thermal choke rod is configured to minimize the cross-sectional area of the component.
The electrically conductive components typically used in electrical power delivery are also highly thermally conductive. To provide the thermal choke rod with the electrical conductivity needed to conduct electrical power, the base material is used in conjunction with a highly electrically conductive material, e.g., gold. In one embodiment, the highly electrically conductive material is plated on the base material. As RF current is conducted largely on the surface of a conductor, the use of a plating material provides the thermal choke rod with the needed RF conductivity, while maintaining the desirable thermal properties of the base material. With regard to the ability to withstand high temperatures, the conductive plating is the limiting factor because the base material can withstand extremely high temperatures. A conductive plating of gold is believed to be able to withstand high temperatures up to about 400 degrees Celsius, which exceeds the temperature range of 300 to 350 degrees Celsius at which the thermal choke rod must function when used in conjunction with ceramic pedestals in high frequency power environments.
In operation 602, a first end portion of an RF input rod is inserted into the first connector of the thermal choke rod and positioned at a prescribed location within the thermal choke rod. The second end portion of the RF input rod is coupled to a plasma processing chamber, e.g., a plasma enhanced chemical vapor deposition (PECVD) chamber. In one embodiment, the prescribed location within the thermal choke rod at which the first end portion of the RF input rod is positioned includes the first connector and a portion of the tubular segment, as shown in, for example,
Once the first end portion of the RF input rod is positioned within the thermal choke rod, in operation 604, the first connector is compressed to reduce the inner diameter of the first connector and cause the inner surface of the first connector to contact and press upon the outer surface of the RF input so as to be mechanically secured to the RF input rod. In one embodiment, the compressing of the first connector to reduce an inner diameter of the first connector includes contacting a tapered surface provided at an end region of the first connector with a tapered surface that is configured to mate with the tapered surface provided at the end region of the first connector. By way of example, the tapered surface provided at an end region of the first connector can be the surface 116-1z of the conically-shaped end region of first connector 116-1 (see, for example,
In operation 606, an RF strap is connected to the second connector of the thermal choke rod. The RF strap is coupled to an RF source such as, for example, RF generator system 122 shown in
In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and/or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
The controller, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.
Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.
With the above embodiments in mind, it should be understood that the embodiments can employ various computer-implemented operations involving data stored in computer systems. These operations are those requiring physical manipulation of physical quantities. Any of the operations described herein that form part of the embodiments are useful machine operations. The embodiments also relates to a device or an apparatus for performing these operations. The apparatus may be specially constructed for the required purpose, such as a special purpose computer. When defined as a special purpose computer, the computer can also perform other processing, program execution or routines that are not part of the special purpose, while still being capable of operating for the special purpose. Alternatively, the operations may be processed by a general purpose computer selectively activated or configured by one or more computer programs stored in the computer memory, cache, or obtained over a network. When data is obtained over a network the data may be processed by other computers on the network, e.g., a cloud of computing resources.
One or more embodiments can also be fabricated as computer readable code on a computer readable medium. The computer readable medium is any data storage device that can store data, which can be thereafter be read by a computer system. Examples of the computer readable medium include hard drives, network attached storage (NAS), read-only memory, random-access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes and other optical and non-optical data storage devices. The computer readable medium can include computer readable tangible medium distributed over a network-coupled computer system so that the computer readable code is stored and executed in a distributed fashion.
Although the method operations were described in a specific order, it should be understood that other housekeeping operations may be performed in between operations, or operations may be adjusted so that they occur at slightly different times, or may be distributed in a system which allows the occurrence of the processing operations at various intervals associated with the processing, as long as the processing of the overlay operations are performed in the desired way.
Accordingly, the disclosure of the example embodiments is intended to be illustrative, but not limiting, of the scope of the disclosures, which are set forth in the following claims and their equivalents. Although example embodiments of the disclosures have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications can be practiced within the scope of the following claims. In the following claims, elements and/or steps do not imply any particular order of operation, unless explicitly stated in the claims or implicitly required by the disclosure.
| Number | Name | Date | Kind |
|---|---|---|---|
| 5829791 | Kotsubo et al. | Nov 1998 | A |
| 6151203 | Shamouilian | Nov 2000 | A |
| 6213478 | Nishikawa | Apr 2001 | B1 |
| 6221221 | Al-Shaikh | Apr 2001 | B1 |
| 6403491 | Liu | Jun 2002 | B1 |
| 6592709 | Lubomirsky | Jul 2003 | B1 |
| 6776892 | Ritzdorf | Aug 2004 | B1 |
| 7625227 | Henderson | Dec 2009 | B1 |
| 9213021 | Plant | Dec 2015 | B2 |
| 20050274324 | Takahashi et al. | Dec 2005 | A1 |
| 20080167720 | Melkent | Jul 2008 | A1 |
| 20120247678 | Takahashi et al. | Oct 2012 | A1 |
| 20130126206 | Zhou | May 2013 | A1 |
| 20150323050 | Ohno | Nov 2015 | A1 |
| 20170040148 | Augustino et al. | Feb 2017 | A1 |
| 20190067076 | Zvokelj | Feb 2019 | A1 |
| Number | Date | Country |
|---|---|---|
| 20140097312 | Aug 2014 | KR |
| 10-20150099400 | Aug 2015 | KR |
| Entry |
|---|
| PCT International Search Report and Written Opinion of the International Searching Authority issued in corresponding International Patent Application No. PCT/US2018/049267 dated Dec. 26, 2018 (Forms PCT/ISA/220, 210, 237) (12 total pages). |
| KR Office Action dated Mar. 23, 2022, in Application No. KR1020197037514. |
| Number | Date | Country | |
|---|---|---|---|
| 20190071778 A1 | Mar 2019 | US |
