Patent Application
20070009673
The present invention relates to semiconductor thin film treatment technology used in manufacturing process of semiconductor circuit element formation; particularly to a semiconductor manufacturing apparatus and method of treating semiconductor thin films using ultraviolet light emission.
Now that improving the properties of thin films is required as semiconductor chip sizes continue to shrink, there are various methods for improving thin films formed on semiconductor substrates.
One of such methods is to improve the properties of thin films formed on semiconductor substrates by treating the films using ultraviolet light emission. In U.S. Pat. No. 6,756,085, improving elastic modulus and material hardness using ultraviolet light emission is mentioned. In U.S. Pat. No. 6,756,085, change in dielectric constants of thin films by ±20% by ultraviolet light emission is also suggested. This change in dielectric constants by ±20%, however, is interpreted that the dielectric constants simply happened to be scattered within that range, not because the dielectric constants were controlled.
In this patent, there is no recognition of controlling dielectric constants by ultraviolet light emission; in fact, it is described that: “The UV curing process improves the mechanical properties of the low-k dielectric material, increasing material hardness while maintaining the dielectric pore, structure, density, and electrical properties” (Section 7, Lines 37-41). In this patent, decrease in dielectric constants is achieved solely by annealing, etc. after UV treatment is conducted, and whether dielectric constants can be controlled by ultraviolet light emission is not suggested.
Additionally, as apparatuses having an ultraviolet light-emitting mechanism and methods of treating semiconductor substrates using ultraviolet light emission, for example, in U.S. Pat. No. 6,284,050, a configuration for ultraviolet light emission by installing a UV lamp and a heater being disposed below the central axis of the UV lamp is disclosed.
However, because a main configuration of this apparatus is the UV lamp being installed on the central axis of the apparatus for emitting ultraviolet light to thin films, ultraviolet light is disproportionately emitted toward the center. Therefore, only localized or standardized treatment effects can be expected because uniform UV emission to the entire thin film, adjustment of UV emission accommodating film properties, etc. are not taken into consideration.
Additionally, in this patent, although improved film hardness and adhesion by ultraviolet light emission are mentioned, no descriptions or suggestions of controlling dielectric constants are included.
According to at least one embodiment of the present invention, one or more objects and effects described below can be achieved. Additionally, there is no need that all objects and effects are achieved in one embodiment, and it is acceptable that alternate objects and effects that are not described here (which can be comprehended or can be fundamental objects and effects from the descriptions of this specification) are achieved.
1) Dielectric constant values of thin films are lowered.
2) A degree of dielectric constant values of thin films to be lowered is accurately controlled.
3) A level of hydrophilic groups existing in the thin film is decreased.
4) Ultraviolet light is emitted to substrates with uniform illumination.
5) A temperature of a substrate being exposed to ultraviolet light emission is to be kept at the same level during the ultraviolet light emission.
6) A uniform gas atmosphere is provided during the ultraviolet light emission.
According to one embodiment of the present invention, an apparatus for treating substrates, which includes a chamber an internal pressure of which can be controlled from a vacuum to the vicinity of an atmospheric pressure, multiple ultraviolet light emitters provided inside the chamber, a heater provided facing and parallel to the emitters inside the chamber, and a filter being disposed between the emitters and the heater and used for uniformizing the illumination of ultraviolet light; and which possesses at least any one of the following configurations in order to uniformly distribute the intensity of illumination of ultraviolet light emitted from the emitters onto a surface of the heater, (A) wherein the emitters comprise inside emitters disposed within a flat surface parallel to the heater surface, and outside emitters disposed on an outer side of the inside emitters by bringing them closer to the heater surface than the inside emitters, (B) which further possesses reflectors for emitting direct light and reflected light of the emitters, and an angle-adjusting mechanism for enabling to vary reflection angles of the reflectors, and (C) which further possesses a distance-adjusting mechanism for enabling to change a distance set for ultraviolet light emission between the filter and the heater, is provided.
The above-mentioned embodiment further can include the following embodiments:
The apparatus, wherein multiple gas inlet ports for introducing gas into the chamber in a direction from an inner circumferential surface to the center of the chamber are disposed.
The apparatus, wherein a rotating mechanism for rotating the heater on its axis is further provided.
The apparatus, wherein the filter has a convex shape that a thickness in the vicinity of its center is thicker than a thickness in the vicinity of its outer perimeter, and the convex portion is processed to provide a curved surface.
The apparatus, wherein the emitters comprise inside emitters disposed within a flat surface parallel to the heater surface, and outside emitters disposed on an outer side of the inside emitters by bringing them closer to the heater surface than the inside emitters.
The apparatus, wherein the chamber comprises an upper chamber for housing the ultraviolet light emitters, a lower chamber surrounding the heater, and a flange installed between the upper chamber and the lower chamber.
The apparatus, wherein the filter is supported between the flange and the upper chamber.
The apparatus, wherein, in the flange, multiple gas inlet ports for introducing gas into the flange in a direction from an inner circumferential surface to the center of the chamber are disposed.
The apparatus, wherein the multiple gas inlet ports are disposed on an inner circumferential surface of the flange at even intervals.
The apparatus, wherein a control unit for controlling light emission by the ultraviolet light emitters is further installed on top of the chamber.
The apparatus which possesses all configurations A, B and C.
Additionally, according to another embodiment of the present invention, an apparatus for treating semiconductor substrates, which includes a chamber an internal pressure of which can be controlled from a vacuum to the vicinity of an atmospheric pressure, multiple ultraviolet light emitters provided inside the chamber, a heater provided facing and parallel to the emitters inside the chamber, a filter being disposed between the emitters and the heater and used for uniformizing the illumination of ultraviolet light, and multiple gas inlet ports for introducing gas into the chamber in a direction from an inner circumferential surface to the center of the chamber, is provided.
In the above, each required condition in one embodiment is mutually replaceable with each required condition in another or more embodiments; each required condition can be combined. The present invention is not limited to the above-mentioned embodiments, but includes other embodiments which can achieve one or more objects mentioned above or objects other than those mentioned above.
Additionally, the present invention can be applied to methods for manufacturing low-k thin films; according to one embodiment, a method for treating semiconductor substrates, which includes the steps of forming a low-k thin film on a substrate, lowering a dielectric constant of the thin film formed by starting ultraviolet light emission to the thin film under a given set of conditions, and continuing ultraviolet light emission under the given set of conditions and stopping the ultraviolet light emission when a dielectric constant value of the thin film gets to or near the lowest value before the film's dielectric constant value begins rising, is provided.
The above-mentioned embodiment can further include the following embodiments:
The method, wherein the intensity of illumination of ultraviolet light is 1-50 mW/cm2.
The method, wherein ultraviolet light emission continues for less than 100 sec.
The method, which further includes a step of providing an N2 or inert gas atmosphere inside the chamber before the ultraviolet light emission is started.
The method, wherein CO2 is further added.
The method, wherein the low-k thin film is a film containing methyl groups.
The method, wherein the low-k thin film is a low-k C-doped silicon oxide film or silicon carbide film.
Additionally, according to another embodiment, a method for treating semiconductor substrates, which includes the steps of forming a low-k thin film on a substrate, lowering a dielectric constant of the thin film formed by starting ultraviolet light emission to the thin film under a given set of conditions, and continuing ultraviolet light emission under the given set of conditions and stopping the ultraviolet light emission before the thin film is changed to an oxide film, is provided.
Furthermore, according to still another embodiment of the present invention, a method for treating semiconductor substrates, which includes the steps of forming a thin film having a first dielectric constant on a substrate, obtaining UV emission time required for the thin film's dielectric constant value to get back to the first dielectric constant again after the thin film's dielectric constant value drops and then rises again when ultraviolet light is emitted to the thin film under a given set of conditions, and emitting ultraviolet light to the thin film under the given set of conditions for 10-50% of the UV emission time obtained, is provided.
In the above, each required condition in one embodiment is mutually replaceable with each required condition in another or more embodiments; each required condition can be combined. The present invention is not limited to the above-mentioned embodiments, but includes other embodiments which can achieve one or more objects mentioned above or objects other than those mentioned above.
The present invention is further described with reference to drawings attached, but the present invention is not limited to these drawings.
As described in the above, the apparatus for treating semiconductor substrates according to one embodiment of the present invention includes (1) a chamber, an internal pressure of which can be controlled from a vacuum to the vicinity of an atmospheric pressure, (2) ultraviolet light emitters provided inside the chamber, (3) a heater provided facing and parallel to the emitters, (4) a filter being disposed between the emitters and the heater and used for uniformizing the illumination of ultraviolet light, and (5) a distance-adjusting mechanism for enabling to change a distance to be set between the filter and the heater.
In a different embodiment, in the above-mentioned apparatus, ultraviolet light can be emitted to the entire thin film uniformly by controlling the illumination of ultraviolet light by altering a shape and a thickness of the filter.
Additionally, according to another embodiment, ultraviolet light emitted from the ultraviolet light emitters comprises direct light and reflected light, and uniformity of the illumination can be improved by disposing respective ultraviolet light emitters and reflectors appropriately.
Additionally, according to still another embodiment, uniformity of the illumination of the ultraviolet light provided by the emitters and reflectors can be adjusted by fine-tuning their dispositions and angles.
Furthermore, according to still another embodiment, disproportionate illumination of ultraviolet light in the vicinity of a thin film can be eliminated by rotating the heater.
Additionally, according to a different embodiment, distribution of illumination of ultraviolet light on a thin film can also be optimized by optimizing a distance between the ultraviolet light emitters and the heater. If a distance between the ultraviolet light emitters and the filter is not much, e.g., approximately 10-30 mm, the distance does not become a serious problem in terms of UV treatment because the light is diffuse light. In that case, optimizing a distance between the filter and the heater becomes valid.
Furthermore, according to a different embodiment, a heater temperature contributes to thin-film improvement by ultraviolet light emission; using a heater which can heat the entire thin film uniformly can improve distribution uniformity of the illumination.
Additionally, by introducing gas uniformly by symmetrically disposing gas inlet ports in a flange for introducing gas, disproportionate thin-film improvement can be eliminated.
Additionally, a cycle of ultraviolet light emission can be implemented by either of continuous emission or pulsed emission (e.g., 0-1000 kHz, 1 kHz, 10 kHz, 40 kHz, 100 kHz, 300 kHz, and values between the foregoing included). Additionally, ultraviolet light emission can be implemented using a UV wavelength of about 100 nm to about 500 nm (preferably about 100 nm to about 400 nm), and at total emitter output of about 1 mW/cm2 to about 1000 mW/cm2 (2 mW/cm2, 5 mW/cm2, 10 mW/cm2, 50 mW/cm2, 100 mW/cm2, 200 mW/cm2, and values between the foregoing included; preferably about 1 mW/cm2 to about 50 mW/cm2). Additionally, the apparatus according to above-mentioned embodiment is not used for film formation, but for film-property modification treatment after a film is formed; hence energy required for film formation is unnecessary.
The present invention is further described with reference to drawings attached, but the present invention is not limited to these drawings.
In this embodiment, the ultraviolet light emitters 8 provided inside the UV emission unit 1 are tubular and plural emitters are disposed parallel; the emitters 8 are disposed adequately for the purpose of uniformizing the illumination of ultraviolet light, and the dispositions are adjusted so as to be able to adjust the uniformity of the illumination; additionally, the reflectors 2 are provided so that ultraviolet light emitted from each ultraviolet light emitter is appropriately reflected, and angles of the reflectors 2 are adjustable so as to be able to uniformize the illumination. Although it is more advantageous if more emitters are provided, there is a limit to the number to be incorporated in the apparatus in view of space limitation. It is acceptable as long as multiple emitters are provided; normally 4-15 emitters; preferably 6-8 emitters. Additionally, a shape of the emitters is not particularly restricted, but is rodlike tubular or circular tube-shaped. A size and a length of each emitter can be the same or different.
In the apparatus shown in
Additionally, as described later, regarding the outer circumferential portion on the outer side of 320 mm, the illumination tends to drop; as a result, there is a possibility that nonuniformity of film properties in the vicinity of an edge portion of a workpiece may occur. For this reason, in one embodiment, such problem is solved using a filter shape as described later.
Additionally, although respective dispositions shown in
Additionally, a reflector angle is preferably adjustable. One example is shown in
The filter 9 shown in
I=IoExp[−4P*T*k/R] (I=Permeation Intensity, Io=Initial Intensity, P=pi, T=Thickness, k=Damping Factor, R=Wave Length)
Additionally, in one embodiment, a thickness of an edge portion of a filter is about 70% to about 95% of a thickness of the vicinity of the center (75%, 80%, 85%, 90%, and values between the foregoing included; preferably 80-90%). Preferably, curved surface work shown in
Additionally, a filter can comprise quartz glass, etc. For example, SiCl4 quartz glass (tetrachlorosilicon quartz glass) can be used. Because of the nature of ultraviolet light, it becomes more difficult for ultraviolet light to permeate through glass as its wavelength becomes shorter; and it becomes particularly difficult for a wavelength shorter than vacuum ultraviolet part to permeate through glass. However, SiCl4 mentioned above has excellent permeability. Other than this, fluoride glasses such as CaF, which has excellent ultraviolet light permeation characteristics, can be used.
Additionally, if quartz glass is used, a filter thickness of 20 mm and above (25 mm, 30 mm, 40 mm, 50 mm and values between the foregoing included), which can endure atmospheric pressure in a vacuum, is necessary.
Additionally, this embodiment is adapted to have a configuration that the filter is placed and installed in a flange so as to facilitate filter maintenance and replacement.
For a heater, its temperature can be adjusted within the range of about 0° C. to about 650° C. in one embodiment. Additionally, a heater having excellent temperature distribution characteristics is preferably used. As a heater having excellent temperature distribution, a heater satisfying one and more required conditions described as follows can be preferably used: (1) excellent in temperature follow, (2) high heat capacity, (3) heater wiring inside the heater is buried deeply from a heater surface, (4) sensors such as TC gauges for reading a temperature are provided in multiple place instead of one place, and a temperature can be read, (5) by providing independent wiring corresponding to the one provided in a sensor area, accurate heating/temperature control for each substrate area can be made, and so forth.
Additionally, a heater preferably possesses a rotating mechanism (about 0.1 rpm to about 100 rpm; preferably about 1 rpm to about 60 rpm). By rotating a workpiece during ultraviolet light treatment, uniformity of ultraviolet light emission can be increased.
Furthermore, so as to be able to adjust the illumination and uniformity of ultraviolet light emitted to a workpiece, a structure enabling a distance between the filter and the heater to be adjustable is preferably provided. For example, by making a heater position changeable by about 5 mm to about 60 mm, and by adjusting a heater position by specifying a distance via a motor using an encoder, a distance between the filter and the heater can be adjusted.
The gas inlet ports are described below. The gas inlet ports are used for introducing inert gas, etc. into the chamber during ultraviolet light emission. Any configuration, which can achieve this purpose, can be used. Preferably, the gas inlet ports are disposed so that the gas is introduced into the chamber uniformly. As one example, multiple gas inlet ports are provided; multiple gas inlet ports are disposed in an inner periphery of the chamber at even intervals so that gas is introduced into the chamber toward the center of the chamber. The number of gas inlet ports is preferably 3-20, more preferably 4-12.
Additionally, the gas inlet ports can be provided inside the flange. One example of providing the gas inlet ports inside the flange is shown in
The method of emitting ultraviolet light is described below.
The present invention is not limited to this embodiment, but according to one embodiment, the method can be implemented by the treatment steps including: (1) forming a low-k thin film on a substrate, (2) starting ultraviolet light emission to the thin film under a given set of conditions to lower a dielectric constant of the thin film formed, and (3) continuing ultraviolet light emission under the given set of conditions and stopping the ultraviolet light emission when the thin film's dielectric constant gets to and near the lowest point and before it begins rising.
Although thin films to be treated by this method are not limited, low-k C-doped silicon oxide films or silicon carbide films formed on semiconductor substrates can be treated by this method. These silicon-containing low-k films can be formed using hydrocarbon-containing silicon compounds as precursors.
For example, thin films formed using source gases including at least one material expressed by chemical formulas 1-6 shown below can be mentioned. Additionally, materials disclosed in U.S. Pat. No. 6,455,445 can be used. The entire disclosure of this U.S. patent is incorporated hereby by reference.
(In the above formula, R1, R2, R3 and R4 are any one of CH3, C2H5, C3H7, C6H5.)
DMDMOS (dimethyldimethoxysilane), DEDEOS (diethyldiethoxyoxysilane), etc. can be mentioned as compounds expressed by Formula 1.
(In the above formula, R1, R2, R3 and R4 are any one of CH3, C2H5, C3H7, C6H5.)
TMOS (tetramethoxysilane), etc. can be mentioned as compounds expressed by Formula 2.
(In the above formula, R1, R2, R3 and R4 are any one of CH3, C2H5, C3H7, C6H5.)
PTMOS (phenyltrimethoxysilane), etc. can be mentioned as compounds expressed by Formula 3.
(In the above formula, R1, R2, R3, R4, R5 and R6 are any one of CH3, C2H5, C3H7, C6H5.)
DMOTMDS (1.3 dimethoxytetramethyldisiloxane) etc. can be mentioned as compounds expressed by Formula 4.
(In the above formula, R1, R2, R3, R4, R5 and R6 are any one of CH3, C2H5, C3H7, C6H5.)
HMDS (hexamethyldisilane), etc. can be mentioned as the compound expressed by Formula 5.
(In the above formula, R1, R2, R3 and R4 are any one of CH3, C2H5, C3H7, C6H5.)
DVDMS (divinyldimethylsilane), 4MS (tetramethylsilane), etc. can be mentioned as compounds expressed by Formula 6.
(In the above formula, R1, R2, R3, R4, R5 and R6 are any one of CH3, C2H3, C2H5, C3H7, C6H5.)
OMCTS (octamethylcyclotrisiloxane), etc. can be mentioned as the compound expressed by Formula 7.
Additionally, if oxygen atoms are not included in materials as in Formula 6, oxygen atoms may be added separately as oxidized gas.
Ultraviolet light emission treatment can be implemented by carrying a substrate on which a thin film is formed into an ultraviolet light treatment apparatus. Additionally, by attaching an ultraviolet light treatment apparatus to a CVD apparatus for forming a thin film, film formation and ultraviolet light treatment can be implemented in a single apparatus; structurally however, it is preferable to separate an ultraviolet light treatment apparatus from a CVD apparatus.
According to one embodiment of ultraviolet light treatment, with pressures inside the chamber being set around atmospheric pressure of about 0.1 Torr using gas selected from Ar, CO, CO2, C2H4, CH4, H2, He, Kr, Ne, N2, N2O, O2, Xe, alcohol-containing CH gas and organic gas (a gas flow rate can be selected from about 0.1 sccm to about 20 slm in one embodiment, preferably about 500 sccm to about 1000 sccm), and by placing a workpiece on a heater whose temperature is set at about 0° C. to about 650° C., ultraviolet light at a wavelength of about 100 nm to about 400 nm, and an output of about 1 mW/cm2 to about 1000 mW/cm2, preferably about 1 mW/cm2 to about 100 mW/cm2, more preferably about 5 mW/cm2 to about 50 mW/cm2 can be emitted from ultraviolet light emitters disposed at an appropriate distance continuously or in a pulsed manner at frequencies of about 0 Hz to about 1000 Hz to a thin film formed on a semiconductor substrate with the heater being rotating on its center as shown in
Additionally, as a gas to be introduced, it is preferable to use N2 or inert gases which are not dissociated by ultraviolet light inside the chamber; using such a gas can lower a dielectric constant effectively. However, according to circumstances, N2 or inert gases which are not dissociated by ultraviolet light may generate hydrophilic groups (Si—H groups, Si—H groups). Although hydrophilic groups existing in the thin film may have possibilities to deteriorate thin film characteristics, by suppressing their peaks, deteriorations of thin film characteristics can be prevented. Suppressing generation of hydrophilic groups becomes possible by introducing CO2 (500 sccm and below in one embodiment) into the chamber (See
When ultraviolet light is emitted to a thin film formed on a semiconductor substrate by the ultraviolet light treatment apparatus, a dielectric constant of the thin film can be lowered. Regarding this phenomenon, various contributing factors including the following phenomenon can be thought:
When ultraviolet light is emitted to bonds between permanent dipoles in the thin film (e.g., bonding of two atoms, molecules having different polarity such as bonding of C—O (carbon-oxygen), Si—CH3 (silicon-methyl groups)), bonding between permanent dipoles is broken (in this case, because of Van der Waals forces, intermolecular bonding can be easily cur off by ultraviolet light); because the bonding disappeared, permanent dipoles themselves become unstable; hence repulsion caused by electrostatic force occurs between permanent dipoles; by this force, polarity reversal occurs. When ultraviolet light emission is stopped, bonds working on between permanent dipoles are formed again because permanent dipoles whose polarity orientation was reversed try to stabilize themselves in that state. By this, the polarity of the thin film itself is lowered because of polarity reversal; as a result, its dielectric constant is lowered.
However, when ultraviolet light is emitted to the thin film, an electric field is formed in the thin film and electric charges are generated on a substrate surface; because of this, if UV emission time is lengthened, more electric charges are generated, and by their electrostatic force, permanent dipoles in the polarity-reversed thin film are aligned in a direction of the electric field by orientational polarization and polarity shows a tendency of increasing. As a result, a dielectric constant shows a tendency of increasing.
Additionally, when ultraviolet light is emitted to the thin film, methyl groups in the thin film are decreased (See
However, if the UV emission time is lengthened similarly to the above-mentioned, methyl groups disappear (See
The above-mentioned contributing factor for lowering dielectric constants can be thought; if the UV emission time is lengthened, dielectric constants are shifted to increase. As a result, because of the above-mentioned contributing factors, optimized UV emission time is required in order to lower dielectric constants. Additionally, the present invention is not limited to the above-mentioned theory. Furthermore, in order to control dielectric constants, N2 or inert gases with which an atmospheric gas inside the chamber is not dissociated by ultraviolet light may be used.
If one example of the above-mentioned change in dielectric constant values is graphed out, a graph will be one shown in
Additionally, in the above, in order to determine the UV emission time, dielectric constant values are measured at approx. three different points of time (e.g., after 50 sec., after 100 sec.) including at the time of starting the ultraviolet light emission; based on dielectric constant values obtained, the time when a dielectric constant value becomes the same level as that at the start of ultraviolet light emission is estimated; the UV emission time can be estimated based on the estimated value, i.e., about 10% to about 50% of the estimated value. Furthermore, by combining a dielectric constant value obtained as a result of the ultraviolet light emission for the estimated time and data obtained from three different points of time, more accurate UV emission time can be identified. (If necessary, by repeating the measurement and estimation several times, more accurate UV emission time can be identified.)
In another embodiment, lowering a dielectric constant of a thin film can be achieved by starting ultraviolet light emission and stopping the emission before the thin film becomes oxidized. Because whether the film is oxidized or not can be understood by, e.g., FT-IR data, UV emission time can also be identified in the same manner mentioned above.
As mentioned above, in order to provide uniform film properties improvement effects including lowered dielectric constants on the entire thin film formed on a semiconductor substrate, it is preferable to uniformize the illumination, temperature and/or gas atmosphere which comprise an environment of uniform ultraviolet light emission. In other words, in one embodiment, at least one of the following is adopted for the purpose of uniformization:
(1) By changing a shape and a thickness of a filter, the illumination of ultraviolet light is controlled.
(2) By disposing each ultraviolet light emitter and reflector appropriately, positioning of the ultraviolet light emitters and reflectors are adjusted and their angles are fine-adjusted.
(3) A heater is rotated on its central axis.
(4) A distance between ultraviolet light emitters and the heater is optimized.
(5) A heater having excellent temperature uniformity is used.
(6) By symmetrically disposing gas inlet ports in a flange for introducing gas, gas is introduced uniformly into the chamber.
By adopting at least any one of (1)-(6), uniform effects on the entire thin film are obtained.
Embodiments of the present invention are described below. However, the present invention is not limited to these embodiments.
Common Conditions:
Common conditions in each embodiment are as described below. As a reactor, the one possessing a configuration shown in
Dielectric constant: 2.65
Modulus: 5.0 GPa
Hardness: 0.9 GPa
RI (n): 1.360 at 633 nm
Film characteristics of a thin film material, DMDMOS
Dielectric constant: 2.75
Modulus: 5.5 GPa
Hardness: 1.0 GPa
RI (n): 1.390 at 633 nm
Embodiment 1: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 90 sec.
Intensity of illumination: 10 mW/cm2
N2: 4,000 sccm
Pressure: 4 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.6
Modulus: 7.9 GPa
Hardness: 1.5 GPa
RI (n): 1.364 at 633 nm
Embodiment 2: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 180 sec.
Intensity of illumination: 10 mW/cm2
N2: 4,000 sccm
Pressure: 4 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.66
Modulus: 11.3 GPa
Hardness: 2.0 GPa
RI (n): 1.373 at 633 nm
Embodiment 3: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
N2: 4,000 sccm
Pressure: 50 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.59
Modulus: 7.7 GPa
Hardness: 1.4 GPa
RI (n): 1.362 at 633 nm
A FT-IR graph showing the state of CH3 groups in the thin film before and after UV emission is shown in
Embodiment 4: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
N2: 1,700 sccm
Pressure: 250 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.60
Modulus: 7.7 GPa
Hardness: 1.4 GPa
RI (n): 1.362 at 633 nm
Embodiment 5: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
N2: 3,650 sccm
Pressure: 500 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.59
Modulus: 7.7 GPa
Hardness: 1.4 GPa
RI (n): 1.362 at 633 nm
Embodiment 6: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
N2: 8,500 sccm
Pressure: 760 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.61
Modulus: 7.6 GPa
Hardness: 1.4 GPa
RI (n): 1.362 at 633 nm
Embodiment 7: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
Ar: 4,000 sccm
Pressure: 4 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.61
Modulus: 7.1 GPa
Hardness: 1.3 GPa
RI (n): 1.360 at 633 nm
Embodiment 8: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
He: 2,000 sccm
Pressure: 4 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.61
Modulus: 6.7 GPa
Hardness: 1.2 GPa
RI (n): 1.360 at 633 nm
Embodiment 9: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
N2: 8,000 sccm
H2: 80 sccm
Pressure: 50 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.66
Modulus: 7.9 GPa
Hardness: 1.4 GPa
RI (n): 1.360 at 633 nm
Embodiment 10: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
N2: 2,500 sccm
CO2: 400 sccm
Pressure: 50 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.69
Modulus: 9.5 GPa
Hardness: 1.6 GPa
RI (n): 1.361 at 633 nm
Embodiment 11: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 15 sec.
Intensity of illumination: 34 mW/cm2
N2: 10,000 sccm
Pressure: 760 Torr
Heater temperature: 350 degrees
Dielectric constant: 2.63
Modulus: 6.7 GPa
Hardness: 1.1 GPa
RI (n): 1.358 at 633 nm
Embodiment 12: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 15 sec.
Intensity of illumination: 50 mW/cm2
N2: 10,000 sccm
Pressure: 760 Torr
Heater temperature: 300 degrees
Dielectric constant: 2.71
Modulus: 6.6 GPa
Hardness: 1.0 GPa
RI (n): 1.358 at 633 nm
Embodiment 13: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMDMOS
Treatment time: 60 sec.
Intensity of illumination: 10 mW/cm2
N2: 4,000 sccm
Pressure: 50 Torr
Heater temperature: 430 degrees
Dielectric constant: 2.70
Modulus: 7.0 GPa
Hardness: 1.3 GPa
RI (n): 1.390 at 633 nm
Embodiment 14: Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Intensity of illumination: 10 mW/cm2
N2: 4,000 sccm
Pressure: 4 Torr
Heater temperature: 430 degrees
In Embodiment 14, changes in dielectric constants were measured by changing UV treatment time. Measurement results are shown in
Process conditions and thin film formation results in this embodiment are shown below.
Thin film material: DMOTMDS
Treatment time: 1,860 sec.
Intensity of illumination: 10 mW/cm2
N2: 4,000 sccm
Pressure: 50 Torr
Heater temperature: 430 degrees
As a result of ultraviolet light emission in this comparative example, CH3 groups and Si—CH3 groups in the thin film nearly disappeared by excessive ultraviolet light emission, and Si—O structure was increased (
