Claims
- 1. A dynamic memory storage capacitor formed in a face of a semiconductor body, comprising:
- a trench etched into the face of the semiconductor body, the trench having a trench wall with an upper portion and a lower portion;
- a storage region in the face of the semiconductor body surrounding the trench wall, the storage region being more highly doped near the upper portion of the trench wall than near the lower portion of the trench wall;
- a storage dielectric on the trench wall; and
- a field plate extending down into the trench.
- 2. The dynamic memory storage capacitor of claim 1 wherein the storage node is implanted arsenic.
- 3. The dynamic memory storage capacitor of claim 2 wherein the field plate is polysilicon.
- 4. The dynamic memory storage capacitor of claim 3 wherein the storage dielectric is oxide.
- 5. The dynamic memory storage capacitor of claim 3 wherein the field plate is isolated from the face in all areas except down in the trench by a layer of oxide and a layer of nitride.
- 6. The dynamic memory storage capacitor of claim 1 wherein the storage node comprises arsenic, implanted at more than one angle.
Parent Case Info
This is a division of application Ser. No. 07/622,468, filed Dec. 5, 1990, now U.S. Pat. No. 5,112,762 issued May 12, 1992.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5017506 |
Shen et al. |
May 1991 |
|
5057887 |
Yashiro et al. |
Oct 1991 |
|
Divisions (1)
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Number |
Date |
Country |
Parent |
622468 |
Dec 1990 |
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